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Johanson Manufacturing 27281SL CAP TRIMMER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	27281SL	Bulk	10		1	1 $31.01 10 $23.247 100 $19.1014 1000 $17.41198 10000 $17.41198	Buy Now
Onlinecomponents.com	27281SL					1 - 10 - 100 - 1000 $17.8 10000 $17.8	Buy Now
Knowles Corporation 27281SL Trimmer / Variable Capacitors GIGA-TRIM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	27281SL		7			1 $28.84 10 $23.25 100 $19.11 1000 $19.03 10000 $19.03	Buy Now
Richardson RFPD	27281SL		76		1	1 $7.99 10 $7.99 100 $7.99 1000 $7.99 10000 $7.99	Buy Now
Johanson Dielectrics Inc 27281SL 27281SL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	27281SL		76		5	1 - 10 $13.35 100 $13.35 1000 $13.35 10000 $13.35	Buy Now
Component Electronics, Inc	27281SL		4			1 $19.23 10 $19.23 100 $14.42 1000 $12.5 10000 $12.5	Buy Now

27281SL Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
27281SL		Johanson Manufacturing	Trimmer Capacitor		Original	PDF

27281SL Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
PC24J4R5 Abstract: Johanson 27273 PC24K080 PC24J1R2 transistor 38W P4446 27261SL johanson 8762 27281SL pc21j4r5 Text: Giga-Trim Selection Guide Click on the Part Number for Line Drawing Johanson P/N Capacitance Range pF 17273 0.6 to 4.5 27261 27261SL 27263 0.3 to 1.2 27264 27265 27271 27271SL 27273 0.6 to 4.5 27274 27275 27281 27281SL 27283 0.4 to 2.5 27284 27285 27291	Original	27261SL 27271SL 27281SL 27291SL 100MHz 200MHz PC24J4R5 Johanson 27273 PC24K080 PC24J1R2 transistor 38W P4446 27261SL johanson 8762 27281SL pc21j4r5	PDF
J161 mosfet transistor Abstract: MOSFET J161 100B6R8JW Text: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21090E AGR21090EU AGR21090EF DS03-070RFPP DS02-276RFPP) J161 mosfet transistor MOSFET J161 100B6R8JW	PDF
Untitled Abstract: No abstract text available Text: gigatrim = [ \ \ \ \_n[ZYWfWY_jehi$	Original	27261SL 27281SL 27283-3R10 27271SL 27291SL	PDF
"RF Power Transistor" Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557 Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF AGR18030EF 21045F "RF Power Transistor" JESD22-C101A transistor equivalent table 557	PDF
TF800BB14-061 Abstract: P1999 8051 microwave oven ec 9410 cf K 2676 9343-11R1 TF800BA14-061 2320-1SL 9816SL 9410-3SL-1 Text: < ] ^ _dZkijho$@e^Wdied^Wibed]X[[dh[Ye]d_p[ZWiW $ J^[jhWZ_j_edYedj_dk[i°	Original	JK-943L 9343-11R1 9343-12R1 9343-13R1 9343-14R1 9343-16R1 9343-18R1 JK-943H TF800BB14-061 P1999 8051 microwave oven ec 9410 cf K 2676 9343-11R1 TF800BA14-061 2320-1SL 9816SL 9410-3SL-1	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21090E AGR21090EU AGR21090EF DS04-018RFPP DS03-070RFPP)	PDF
J299 Abstract: No abstract text available Text: Preliminary Data Sheet December 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21090E AGR21090EU AGR21090EF DS04-059RFPP DS04-018RFPP) J299	PDF
AGR21090E Abstract: AGR21090EF JESD22-C101A mosfet 6 ghz Text: AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21090E AGR21090E AGR21090EU AGR21090EF 1090EF AGR21090XF M-AGR21090F 12-digit AGR21090EF JESD22-C101A mosfet 6 ghz	PDF
mrf5s21090 Abstract: Nippon capacitors Text: Freescale Semiconductor Technical Data Document Number: MRF5S21090H Rev. 3, 10/2008 RF Power Field Effect Transistors MRF5S21090HR3 MRF5S21090HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 MRF5S21090H mrf5s21090 Nippon capacitors	PDF
transistor equivalent table 557 Abstract: 21045F Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F	PDF
AGR21090 Abstract: mosfet j460 AGR21090E AGR21090EF JESD22-C101A mosfet J442 100b6r8 100B8 100B6R8JW Text: Preliminary Data Sheet April 2004 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21090E AGR21090E AGR21090EU AGR21090EF DS04-165RFPP DS04-059RFPP) AGR21090 mosfet j460 AGR21090EF JESD22-C101A mosfet J442 100b6r8 100B8 100B6R8JW	PDF
AGR18030EF Abstract: JESD22-C101A Text: Preliminary Data Sheet November 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF AGR18030EF DS04-204RFPP PB04-101RFPP) JESD22-C101A	PDF
27271SL Abstract: 27281SL 27273 27261SL 27291 17273 27293 57283-1 27291SL Text: gigatrim = [ \ \ \ \_n[ZYWfWY_jehi$	Original	27261SL 27281SL 27271SL 27291SL 27271SL 27281SL 27273 27261SL 27291 17273 27293 57283-1 27291SL	PDF
AN1955 Abstract: ATC100B2R0BT500XT ATC100B9R1CT500XT MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090 D2426 Nippon capacitors Text: Freescale Semiconductor Technical Data Document Number: MRF5S21090H Rev. 3, 10/2008 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 MRF5S21090HR3 AN1955 ATC100B2R0BT500XT ATC100B9R1CT500XT MRF5S21090H MRF5S21090HSR3 mrf5s21090 D2426 Nippon capacitors	PDF

Johanson 27273 Abstract: PC24J4R5 Text: Giga-Trim Capacitor Selection Guide Johanson P/N Dielectric .6 to 4.5 >8 500 Alumina 500 Sapphire Sapphire Sapphire Sapphire Sapphire 17273 27261 27261SL 27263 27264 27265 27271 27271SL 27273 27274 27275 27281 27281SL 27283 27284 27285 27291 27291SL 27293	OCR Scan	27261SL 27271SL 27281SL 27291SL 5001J1R2 PC21J2R5 PC22J1R2 PC22J2R5 Johanson 27273 PC24J4R5	PDF
Untitled Abstract: No abstract text available Text: Giga-Trim Capacitor Selection Guide 27261 27261SL 27263 27264 27265 27271 27271SL 27273 27274 27275 27281 27281SL 27283 27284 27285 .3 to 1.2 >5 PC21J1R2 PC22J1R2 PC24J1R2 PC23J1R2 500 0 ± 50 .1-1 >5000 21 0 ± 50 .2-2 >3000 22 0 ± 50 .2-2 >4000 23 0 ± 75	OCR Scan	27261SL 27271SL 27281SL PC21J1R2 PC22J1R2 PC24J1R2 PC23J1R2 PC21J4R5 PC22J4R5 PC24J4R5	PDF
Untitled Abstract: No abstract text available Text: Giga-Trim Series Figure 3 Dimensions: inches Cap Rjwgs pF m - : A ' - *' c D s (f ' 3 1.2 4 2.5 6 4.5 . 8 - 8.0 27261 27281 27271 27291 0.225 0.225 0.314 0.480 0.075 0.118 0.118 0.118 0.23 0.23 0.23 0.23 0.08 0.08 0.13 0.25 0.04 0.04 0.04 0.04 0.094 0.14	OCR Scan	261SL 27281SL 27271SL 27291SL	PDF
MVM010 Abstract: MURATA mvm010 PC26T140 PC26J300 PC24J4R5 MVM010W GHC11000 mav03 pc28j3r5 CDR21BG Text: Configuration Microelectronics Johanson Vottro -nics Tronser MIL Designation Tekelec II n MTR02X YV 1 1 MTR12X MTR22X l i MTR32X «E». a w MTR42X ea H i U t MTR52X MTR021 MTR121 MTR221 MTR321 MTR421 MTR521 27260 27261 27261SL 27264 27265 27263 P1A P1B P1J	OCR Scan	MTR021 MTR121 MTR221 MTR321 MTR421 MTR521 MTR921 MTR022 MTR122 MTR222 MVM010 MURATA mvm010 PC26T140 PC26J300 PC24J4R5 MVM010W GHC11000 mav03 pc28j3r5 CDR21BG	PDF
PC24J2R5 Abstract: JMC 27284 Text: JOHANSON MANUFACTURING 44E » B DOOOSbB M B ç>Ç- %Z - C>Ç <^$4aM »t£> Tfp<§ .4 to 2.5pF 1?; a s .8 to 8pF ¿T ' GIGA-TRIM CAPACITORS J M C P/N M IL S P E C RANGE PF TC PPM /°C GIGA-TRIM® CAPACITORS M IN. Q @ 250 M H z D IM E N SIO N S IN CHES ADJUSTING	OCR Scan	27281SL PC22J2R5 PC21J2R5 PC24J2R5 PC23J2RS FAX-201-334-2954 PC24J2R5 JMC 27284	PDF

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27281SL Search Results

27281SL Price and Stock

Johanson Manufacturing 27281SL

Knowles Corporation 27281SL

Johanson Dielectrics Inc 27281SL

27281SL Datasheets (1)

27281SL Datasheets Context Search

PC24J4R5

J161 mosfet transistor

Untitled

"RF Power Transistor"

TF800BB14-061

Untitled

J299

AGR21090E

mrf5s21090

transistor equivalent table 557

AGR21090

AGR18030EF

27271SL

AN1955

Johanson 27273

Untitled

Untitled

MVM010

PC24J2R5