eprom 27c64q200
Abstract: 27C64 ROM 27C64 eprom 27c64 PROGRAMMER CIRCUIT 27C32 27c32 eprom cmos prom 27C64Q200 J28AQ EPROM 27C32
Text: 27C64 65 536-Bit 8 192 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C64 is a high-speed 64K UV erasable and electrically reprogrammable CMOS EPROM ideally suited for applications where fast turnaround pattern experimentation and
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Original
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27C64
536-Bit
27C64
28-pin
32-pin
eprom 27c64q200
27C64 ROM
eprom 27c64 PROGRAMMER CIRCUIT
27C32
27c32 eprom
cmos prom
27C64Q200
J28AQ
EPROM 27C32
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PDF
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27C64
Abstract: eprom 27c64 PROGRAMMER CIRCUIT 200B 27C64-12 27C64-15 27C64-17 27C64-20 27C64-25 27C64 8k EPROM
Text: 27C64 64K 8K x 8 CMOS EPROM •1 2 3 4 5 6 7 8 9 10 11 12 13 14 27C64 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM NC A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 27 8 26 27C64 9 25 22 13 21 A8 A9 A11 NC OE A10 CE O7 O6 20 23 12 19 24
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Original
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27C64
27C64
DS11107K-page
eprom 27c64 PROGRAMMER CIRCUIT
200B
27C64-12
27C64-15
27C64-17
27C64-20
27C64-25
27C64 8k EPROM
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PDF
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27C32
Abstract: 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a
Text: Dataman S4 Programmer Device Support List Library Version 2.84 May 2001 8 Bit EPROMS, EEPROMS & Flash ROMS AMD 27010 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 9716 9864-25 27128 27256 27512 27C020 27C128 27C64 2817A 28F010 28F512
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2716B
2732B
27C010
27C100
27C512L
27HB010
28C256
28F256
29F002NBB
29F040
27C32
24c04 Atmel
27c301
atmel 24c02
39SF040
24C08 ATMEL
dataman s4
27C101
Xicor 28256 eeprom
2864a
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PDF
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27c64-25
Abstract: No abstract text available
Text: CMOS UV ERASABLE 65536-BIT READ ONLY MEMORY FU JITSU MBM 27C64-20 MBM 27C64-25 MBM 27C64-30 CMOS 8192x8B IT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 65,5 36 b it static com plem entary MOS erasable and electrically reprogrammable read only m em ory EPROM . It is
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OCR Scan
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65536-BIT
27C64-20
27C64-25
27C64-30
8192x8B
27C64
28-pin
32-Pad
27C64.
27c64-25
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PDF
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Fujitsu 27C64
Abstract: 27c64-30
Text: CMOS UV ERASABLE 65536-BIT READ ONLY MEMORY FU JITSU MBM 27C64-20 MBM 27C64-25 MBM 27C64-30 CMOS 81 92 x8B IT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 6 5 ,5 3 6 b it static com plem entary MOS erasable and electrically reprogrammable read only m em ory EPROM . It is
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OCR Scan
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65536-BIT
27C64-20
27C64-25
27C64-30
27C64
28-pin
32-Pad
27C64.
28-LE
DIP-28C-C01)
Fujitsu 27C64
27c64-30
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PDF
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Untitled
Abstract: No abstract text available
Text: & 27C64 M icro ch ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION High speed performance — 120ns maximum access time The Microchip Technology Inc 27C64 is a CMOS 64K bit (electrically) Programm able Read Only Memory. The CMOS Technology for low power consumption
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OCR Scan
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27C64
120ns
27C64
120ns.
DS11107G-7
DS11107G-8
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PDF
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27S12
Abstract: 27128 memory nsc600
Text: 3IE DApril 1989 V 6 - / 3 - Z .J 27C64 65,536-Bit 8,192 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C64 Is a high-speed 64K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applica tions where fast turnaround, pattern experimentation and
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OCR Scan
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0112b
27C64
536-Bit
28-pin
32-pin
2-26A
39M131931
27S12
27128 memory
nsc600
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PDF
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Untitled
Abstract: No abstract text available
Text: 27C64 & M icrochip 64K 8K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C64 is a CMOS 64K bit (electrically) Programmable Read Only Memory. The device is organized as 8K words by 8 bits (8K bytes). Accessing individual bytes from an address transition or
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OCR Scan
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27C64
27C64
120ns.
120ns
DS11107F-7
DS11107F-8
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PDF
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maxim 27c64
Abstract: DS60011
Text: & 27C64 M ic r o c h ip 64K 8K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C64 is a CMOS 64K bit — 120ns maximum access time • CMOS Technology for low power consumption ultraviolet light Erasable (electrically) Programmable
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OCR Scan
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27C64
120ns
28-pin
32-pin
DS11107D-7
27C64
DS11107D-8
maxim 27c64
DS60011
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PDF
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27C64 8k EPROM
Abstract: No abstract text available
Text: $ 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES PACKAGETYPES • High speed performance - 120 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 nA Standby current • Factory programming available
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OCR Scan
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27C64
28-pin
32-pin
27C64
DS111071-page
27C64 8k EPROM
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PDF
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LC 7258
Abstract: 7C266 203CE
Text: CY7C266 / CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)
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OCR Scan
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CY7C266
CY7C266
32-Pin
28-Lead
600-Mil)
LC 7258
7C266
203CE
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PDF
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loo8
Abstract: No abstract text available
Text: & 27C64 Microchip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns access time available • CMOS Technology for low power consumption —20mA Active current — 10OjiA Standby current • Factory programming available • Auto-insertion-compatible plastic packages
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OCR Scan
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27C64
27C64
120ns.
DS11107H-page
MCHPD001
loo8
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PDF
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LC 7258
Abstract: AG04
Text: ^ CY7C266 SEMICONDUCTOR 8K x 8 PROM PowerSwitched and Reprogrammable Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)
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CY7C266
7C266
32-Pin
600-M
LC 7258
AG04
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PDF
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27c64 uv eprom
Abstract: 27C64 8k EPROM
Text: 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance —120 ns access time available • CMOS Technology for low power consumption —20 mA Active current —100 jiA Standby current • Factory programming available
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OCR Scan
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27C64
27C64
DS111071-page
27c64 uv eprom
27C64 8k EPROM
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PDF
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Untitled
Abstract: No abstract text available
Text: 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance —120 ns access time available • CMOS Technology for low power consumption —20 mA Active current — 100 nA Standby current • Factory programming available
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27C64
27C64
28-Lead,
44-Lead,
10x10mm)
bl03201
001DS11
DS00049E
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PDF
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290153
Abstract: No abstract text available
Text: ir r t e T 64K 8K X 57F64 8 CHMOS FLASH EPROM • Flash-Erase — Two Second Typical Array Electrical Erasure On-Board Program/Erase — New Modes Simplify In-Module Firmware Upgrades ■ High Performance Speeds — 150 ns Maximum Access Time 2764A and 27C64 JEDEC Pinout
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57F64
27C64
290153
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PDF
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intel 27f64
Abstract: 27F64 150V0
Text: PKEILOIMIDMAIHV in té T 27F64 64K 8K x 8 CHMOS FLASH MEMORY On-Board Program/Erase — New Modes Simplify In-Module Firmware Upgrades 2764A and 27C64 JEDEC Pinout — 28 Pin Cerdip Package Q uick-EraseTM A lg o rith m — Two Second Typical Array Electrical
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27F64
27C64
27F64,
27F64
AP-314
ER-19
intel 27f64
150V0
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PDF
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intel 27c64
Abstract: 87C64 27C640 27C64 27C64 8k EPROM N27C64-1 87C64-20 N27C64 N27C64-20 87C64-25
Text: intei 27C64/87C64 64K 8K x 8 CHMOS PRODUCTION AND UV ERASABLE PROMS • CHMOS Microcontroller and Microprocessor Compatible -8 7 C 6 4 -in teg ra ted Address Latch — Universal 28 Pin Memory Site, 2-line Control _ ■ Low Power Consumption — 100 fxA Maximum Standby Current
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27C64/87C64
-87C64-integrated
28-Pin
C01nSUm
32-Lead
27C64
87C64
27C64.
27C64/87C64
intel 27c64
27C640
27C64 8k EPROM
N27C64-1
87C64-20
N27C64
N27C64-20
87C64-25
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PDF
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333Q
Abstract: 27C64 CY7C266 a50tb
Text: CY7C266 5 f C Y PR ESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Direct replacement for 27C64
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OCR Scan
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CY7C266
27C64
CY7C266
600-mil-wide
45LMB
32-Pin
CY7C266â
45QMB
333Q
a50tb
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PDF
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2716 TI eprom
Abstract: EPROM 27C32 2732 EPROM specification ti 27c32 27C32 27c32 eprom
Text: O K I Semiconductor CODE ENTRY ♦ CODE ENTRY The MASK version program code ENTERING method is outlined below. 1. Usable Media 1 2 pieces of sam e type EPRO M s containing identical DA TA EPRO M specification r 2716 - 2732 - 27C32 - 27C32A - 2764 - 27C64
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27C32
27C32A
27C64
27C128
2716 TI eprom
EPROM 27C32
2732 EPROM specification
ti 27c32
27c32 eprom
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C266 ^ 0 CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TT L -com patible I/O • CMOS for optimum speed/power • D irect replacem ent for 27C64 E PR O M s • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)
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CY7C266
266-35PC
266-45PC
CY7C266--
266-45D
7C266--
45LMB
266-45Q
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PDF
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Untitled
Abstract: No abstract text available
Text: M $ 27C64 ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES PACKAGE TYPE • High speed performance DIP/SOIC - 120 ns access time available VppQ • 1 28 H Vcc A12C 2 • CMOS Technology for low power consumption 27 JPGM - 20 mA Active current A 7C 3 A 6C 4 26 13 n c
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27C64
28-pin
32-pin
DS11107J-page
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PDF
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Untitled
Abstract: No abstract text available
Text: 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES PACKAGETYPES DIP/SOIC • High speed performance - 120 ns access time available • CMOS Technology for low power consumption - 20 mA Active current Vpp [ I • 1 28 H V c c A12C 2 A7 C 3 27 26 □ NC
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OCR Scan
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27C64
28-pin
DS11107L-page
27C64
bl032Gl
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PDF
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Untitled
Abstract: No abstract text available
Text: 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES PACKAGE TYPE DIP/SOIC • High speed performance - 120 ns access time available Vpp C A12C A7C A 6C A 5C A4C •1 2 3 4 5 6 A3C 7 A2Ü B A lC 9 A0 C 10 o o C 11 01C 12 02 £ 13 VesE 14 • C M O S Technology for low power consumption
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27C64
DS11l07K-page
bl03201
00130b?
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PDF
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