eprom 27c64q200
Abstract: 27C64 ROM 27C64 eprom 27c64 PROGRAMMER CIRCUIT 27C32 27c32 eprom cmos prom 27C64Q200 J28AQ EPROM 27C32
Text: 27C64 65 536-Bit 8 192 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C64 is a high-speed 64K UV erasable and electrically reprogrammable CMOS EPROM ideally suited for applications where fast turnaround pattern experimentation and
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27C64
536-Bit
27C64
28-pin
32-pin
eprom 27c64q200
27C64 ROM
eprom 27c64 PROGRAMMER CIRCUIT
27C32
27c32 eprom
cmos prom
27C64Q200
J28AQ
EPROM 27C32
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27c32
Abstract: 27c32 eprom EPROM 27C32 27cp128 eprom 27c64 PROGRAMMER CIRCUIT NMC27C512 national semiconductor 27c32 27C64 27C16H 27C32B
Text: National Semiconductor Application Note 472 Merrill Johnson March 1987 INTRODUCTION National Semiconductor is a broad-based supplier of low power CMOS EPROMs CMOS EPROMs are programmed the same way NMOS EPROMs are programmed CMOS and NMOS EPROMs are pin compatible in programming
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27C64-150
Abstract: 27C64-3 eprom 27c64 27C64 27C64-1 27C64-2 27C64-200 CY27C64 27C644 27C64 8k EPROM
Text: fax id: 3006 1CY 27C6 4 CY27C64 8K x 8 EPROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these EPROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.
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CY27C64
600-mil-wide
27C64-150
27C64-3
eprom 27c64
27C64
27C64-1
27C64-2
27C64-200
CY27C64
27C644
27C64 8k EPROM
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PDF
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27C64-150
Abstract: CY27C64 27C64 27C64-200
Text: CY27C64 8K x 8 EPROM D Features D D D D D D CMOS for optimum speed/power Functional Description Windowed for reprogrammability The CY27C64 is a highĆperformance 8192 word by 8 bit CMOS PROM. When deselected, the CY27C64 automatically powers down into a lowĆpower standby
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CY27C64
CY27C64
600milwide
27C64-150
27C64
27C64-200
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winbond 25080
Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010
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2732B
27C100
27HB010
27C256
27HC64
27C128
27C040
7128A
winbond 25080
29F200BB
16LF648A
89V51RD2
18f252
89S51
National SEMICONDUCTOR GAL16V8
29sf040
12f675
29F400BB
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PDF
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8510203YA
Abstract: QP27C64 8510201ZA QP27C64-20
Text: QP27C64 March 9, 2009 QP27C64 – 64 Kilobit 8K x 8 CMOS EPROM General Description The QP27C64 is an 8Kx8 (64-Kbit), UV erasable programmable read-only memory. It operates from a single +5 V supply, has a static standby mode, and features fast single address location programming. The QP27C64 meets the
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QP27C64
QP27C64
64-Kbit)
27C64
Mil-Std-1835
Mil-Std-883
Mil-PRF-38535,
8510203YA
8510201ZA
QP27C64-20
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27c64-25
Abstract: No abstract text available
Text: CMOS UV ERASABLE 65536-BIT READ ONLY MEMORY FU JITSU MBM 27C64-20 MBM 27C64-25 MBM 27C64-30 CMOS 8192x8B IT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 65,5 36 b it static com plem entary MOS erasable and electrically reprogrammable read only m em ory EPROM . It is
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65536-BIT
27C64-20
27C64-25
27C64-30
8192x8B
27C64
28-pin
32-Pad
27C64.
27c64-25
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Fujitsu 27C64
Abstract: 27c64-30
Text: CMOS UV ERASABLE 65536-BIT READ ONLY MEMORY FU JITSU MBM 27C64-20 MBM 27C64-25 MBM 27C64-30 CMOS 81 92 x8B IT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 6 5 ,5 3 6 b it static com plem entary MOS erasable and electrically reprogrammable read only m em ory EPROM . It is
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65536-BIT
27C64-20
27C64-25
27C64-30
27C64
28-pin
32-Pad
27C64.
28-LE
DIP-28C-C01)
Fujitsu 27C64
27c64-30
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27S12
Abstract: 27128 memory nsc600
Text: 3IE DApril 1989 V 6 - / 3 - Z .J 27C64 65,536-Bit 8,192 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C64 Is a high-speed 64K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applica tions where fast turnaround, pattern experimentation and
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0112b
27C64
536-Bit
28-pin
32-pin
2-26A
39M131931
27S12
27128 memory
nsc600
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maxim 27c64
Abstract: DS60011
Text: & 27C64 M ic r o c h ip 64K 8K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C64 is a CMOS 64K bit — 120ns maximum access time • CMOS Technology for low power consumption ultraviolet light Erasable (electrically) Programmable
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27C64
120ns
28-pin
32-pin
DS11107D-7
27C64
DS11107D-8
maxim 27c64
DS60011
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PDF
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intel 27c64
Abstract: 87C64 27C640 27C64 27C64 8k EPROM N27C64-1 87C64-20 N27C64 N27C64-20 87C64-25
Text: intei 27C64/87C64 64K 8K x 8 CHMOS PRODUCTION AND UV ERASABLE PROMS • CHMOS Microcontroller and Microprocessor Compatible -8 7 C 6 4 -in teg ra ted Address Latch — Universal 28 Pin Memory Site, 2-line Control _ ■ Low Power Consumption — 100 fxA Maximum Standby Current
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27C64/87C64
-87C64-integrated
28-Pin
C01nSUm
32-Lead
27C64
87C64
27C64.
27C64/87C64
intel 27c64
27C640
27C64 8k EPROM
N27C64-1
87C64-20
N27C64
N27C64-20
87C64-25
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27C64MQ25
Abstract: 27C64MQB
Text: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX_ 27C64 CMOS 65, 536 BIT 8192 x 8 UV ERASABLE PROM MEMORY DESCRIPTION Th e 27C 64 is a h ig h -s p e e d 6 4 K U V e ra s a b le and e le c tric a lly rep ro g ram m a b le EPR O M id e a lly suited
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27C64
32-pad
90113-OOx
90113-OOx
27C64MQ25
27C64MQ30
27C64MEQ25
27C64MQB
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27C64-30
Abstract: Fujitsu 27C64-30 i3001 Fujitsu 27C64
Text: FUJITSU M I C RO ELECT RO NICS S3E D 37^7^5 000=1152 7 C M O S IU V : E R A S A B L F U J IT S U 6 5 5 3 6 -B C E R E A ò nl ^ m em ofm M CMOS 8192X8BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 6 5 ,5 3 6 bit static complementary MOS
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8192X8BIT
27C64
28-pin
32-Pad
27C64.
320sec.
16sec.
27C64-25
27C64-30
37M17b2
27C64-30
Fujitsu 27C64-30
i3001
Fujitsu 27C64
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27C64 8k EPROM
Abstract: ic 27c64 27c642
Text: CY27C64 8K x 8 EPROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 70 ns commercial Functional Description The CY27C64 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY27C64 automatically
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CY27C64
27C64 8k EPROM
ic 27c64
27c642
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Untitled
Abstract: No abstract text available
Text: M $ 27C64 ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES PACKAGE TYPE • High speed performance DIP/SOIC - 120 ns access time available VppQ • 1 28 H Vcc A12C 2 • CMOS Technology for low power consumption 27 JPGM - 20 mA Active current A 7C 3 A 6C 4 26 13 n c
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27C64
28-pin
32-pin
DS11107J-page
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PDF
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27c64 uv eprom
Abstract: 27C64 8k EPROM
Text: 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance —120 ns access time available • CMOS Technology for low power consumption —20 mA Active current —100 jiA Standby current • Factory programming available
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27C64
27C64
DS111071-page
27c64 uv eprom
27C64 8k EPROM
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ic 27c64
Abstract: No abstract text available
Text: $ M ic r o c h ip 27C64 64K 8K x 8 CMOS EPROM PACKAGE TYPE FEATURES • High speed performance DIP/SOIC - 120 ns access tim e available Vpp C • 1 - 100 |iA Standby current • Factory program m ing available 25 H a s A6 C 5 A4 C 6 24 Q7 C 8 AlC 9 A2 • Auto ID aids autom ated program m ing
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28-pin
32-pin
27C64
DS11107J-page
27C64
ic 27c64
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loo8
Abstract: No abstract text available
Text: & 27C64 Microchip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns access time available • CMOS Technology for low power consumption —20mA Active current — 10OjiA Standby current • Factory programming available • Auto-insertion-compatible plastic packages
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27C64
27C64
120ns.
DS11107H-page
MCHPD001
loo8
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PDF
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Untitled
Abstract: No abstract text available
Text: & 27C64 M icro ch ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns access time available • CMOS Technology for low power consumption — 20mA Active current — 10OnA Standby current • Factory programming available • Auto-insertlon-compatible plastic packages
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27C64
120ns
10OnA
28-pin
32-pin
DS11107H-page
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PDF
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27c32
Abstract: EPROM 27C32 27c32 eprom EPROM 2764 nmc27cp128q300 27C128 eprom 27C16 Vpp of 27256 eprom 2716 eprom datasheet 27C512
Text: NMC27C1023 VJFÊ National /2 /m Semiconductor ÆUm Corporation ADVANCED INFORMATION NMC27C1023 1,048,576-Bit 128k x 8 UV Erasable CMOS PROM General Description Features The NMC27C1023 is a high-speed 1024k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited
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NMC27C1023
576-Bit
NMC27C1023
1024k
32-pin
tl/d/8805-2
NMC27CP128
NMC27CP128Q
27c32
EPROM 27C32
27c32 eprom
EPROM 2764
nmc27cp128q300
27C128
eprom 27C16
Vpp of 27256 eprom
2716 eprom datasheet
27C512
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Untitled
Abstract: No abstract text available
Text: 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance —120 ns access time available • CMOS Technology for low power consumption —20 mA Active current — 100 nA Standby current • Factory programming available
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27C64
27C64
28-Lead,
44-Lead,
10x10mm)
bl03201
001DS11
DS00049E
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PDF
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AM27C64
Abstract: No abstract text available
Text: AOV MI CR O MEMORY IM E D Q 0ES7S26 O O S V a 1! ? i l T-Hb-i%-Z°[ A m 2 7 C 6 4 “ 8,192 x 8-Bit CMOS EPROM £ Devices D IS T IN C T IV E C H A R A C T E R IS T IC S JEDEC-approved pinout ± 10% power supply tolerance available One-Time Programmable OTP Flashrite program
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0ES7S26
Am27C64
64K-bit,
27C64
0257S2Ã
T-46-13-29
WF000555
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am27c64
Abstract: AM27C64-250 st m27c64 AM27C64-205
Text: Prelim inary Am27C64 Advanced M icro 8,192 x 8-Bit C M O S EPRO M Devices DISTINCTIVE CHARACTERISTICS • • • • Fast access time — 55 ns Low power consumption: - 100 nA maximum standby current Programming voltage: 12.5 V Single + 5-V power supply • JEDEC-approved pinout
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Am27C64
64K-bit,
27C64
WF000555
AM27C64-250
st m27c64
AM27C64-205
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PDF
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Untitled
Abstract: No abstract text available
Text: Am27C64 8,192 X 8-Bit CMOS EPROM > 3 DISTINCTIVE CHARACTERISTICS • • • • • • • Fast a ccess lim e — 55 ns Low pow er consum ption: - 100 juA maxim um standby current Program m ing voltage: 12.5 V Single + 5 -V pow er supply • M -J JED EC-approved pinout
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Am27C64
AIS-WCP-SM-2/89-0
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