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    2878 TRANSISTOR Search Results

    2878 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    2878 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2878 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC 2878 FOR MUTING AND SWITCHING APPLICATIONS • • • High Emitter-Base Voltage : Vj5BO~25V Min. High Reverse hpg : Reverse hjrg = 150 (Typ.) (VCE= - 2 V , I ç ——4mA) Low On Resistance


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    2SC2878 961001EAA1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-2878; Rev 0; 7/03 2:1 Multiplexers and 1:2 Demultiplexers with Loopback Ultra low 91psP-P max pseudorandom bit sequence (PRBS) jitter ensures reliable communications in highspeed links that are highly sensitive to timing error, especially those incorporating clock-and-data recovery,


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    91psP-P TIA/EIA-644 MAX9394/MAX9395 32pin 28-pin 5x5x01 MAX9394/MAX9395 PDF

    MAX9394

    Abstract: MAX9394EHJ MAX9395 MAX9395EHJ
    Text: 19-2878; Rev 1; 5/07 2:1 Multiplexers and 1:2 Demultiplexers with Loopback The MAX9394/MAX9395 consist of a 2:1 multiplexer and a 1:2 demultiplexer with loopback. The multiplexer section channel B accepts two low-voltage differential signaling (LVDS) inputs and generates a single LVDS


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    MAX9394/MAX9395 MAX9394 MAX9394EHJ MAX9395 MAX9395EHJ PDF

    TO111 package

    Abstract: 2N278 2N2879 2N2880 2N2877 TWX910-950-1942 2N2878
    Text: 3918590 GENERAL 95D SEM ICON DUCTOR General Sf* Sem iconductor ^ « Industries, Inc. 02100 2N 2877 2N 2878 2N 2879 2N 2880 T -3*- SQ U H R E TÌ COMPANY DIFFUSED SILICON EPITAXIAL PASSIVATED TRANSISTOR NPN SILICON HIGH-POWER TRANSISTORS T h e » devices are designed for use In power amplifiers and switching applications,


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    TWX910-950-1942 TO111 package 2N278 2N2879 2N2880 2N2877 2N2878 PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-2878; Rev 1; 5/07 2:1 Multiplexers and 1:2 Demultiplexers with Loopback The MAX9394/MAX9395 consist of a 2:1 multiplexer and a 1:2 demultiplexer with loopback. The multiplexer section channel B accepts two low-voltage differential signaling (LVDS) inputs and generates a single LVDS


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    MAX9394/MAX9395 PDF

    RURP15100

    Abstract: No abstract text available
    Text: interdi RURP15100 Data Sheet January 2000 File N u m b e r 2878. 3 15A, 1000V Ultra fast Diode Features The RURP15100 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted,


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    RURP15100 RURP15100 100ns) TA09906. 43G2271 PDF

    S0433

    Abstract: No abstract text available
    Text: AL L EGRO niCROSYSTEflS I NC T3 J> m GSOMSafl □D0 3 b 73 fl • ALGR T-91-01 PROCESS DFC Process DFC PNP Small-Signal Transistor Process DFC is a PNP silicon double-diffused epi­ taxial planar device designed primarily to be used in medium-power amplifier and switching circuits.


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    0S0433A DD3b73 T-91-01 10jxA S0433Ã 0Q03b74 S0433 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-8 w v CE m in /m a x @ A /V ^C E O Ic (sus) VOLTS (m a x ) AM PS 2N 1483 40 3 20-60@ .75/4 2N 1 4 8 4 55 3 2 N 1485 40 2 N 1486 2N 1701 i*fe@ ^ C E ( s a t) p * r D fx W ATTS (M H z) 2@ .75/.075 25 1.25


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    O-59/TO-111 PDF

    BIT 3195 G

    Abstract: TRANSISTOR 5804 transistor 5910 2878 transistor ma 8920 regulator darlington array 2804 BIT 3195 8205 A mosfet 8205 mosfet 5810-FQ
    Text: Allegro MicroSystems Fax-on-Demand: 1-888-286-9288 Outside North America: 1-202-216-1827 ICs and PMCMs PRODUCT INDEX in NUMERICAL ORDER Part Number* Description 8932-A 8958 Motor Drivers Quad, 1.8 A, 50 V Darlington Power Driver Quad, 1.8 A, 50 V Darlington Power Driver


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    932-A BIT 3195 G TRANSISTOR 5804 transistor 5910 2878 transistor ma 8920 regulator darlington array 2804 BIT 3195 8205 A mosfet 8205 mosfet 5810-FQ PDF

    MC 2882

    Abstract: 2SC2862 MC 342 transistor 210B MC 2871
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    175MHÃ MC 2882 2SC2862 MC 342 transistor 210B MC 2871 PDF

    SLA6023 driver schematic

    Abstract: UDN2983A equivalent SMA4033 ULN2068LB STA431A STA458C UDN2580A udn darlington driver ic SLA4031 T02EB0
    Text: POWER & DISPLAY DRIVERS 431 THRU 458, 4310 THRU 4391, 5022 THRU 6030, AND 8001 BRIDGE AND HALF-BRIDGE TRANSISTOR ARRAYS Part Number STA431A STA434A STA457C STA458C SLA4310 SLA4313 SLA4340 SLA4390 SLA4391 SLA8001 SLA5022 SMA6010 SLA6012 SMA6014 SLA6020 SLA6022


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    STA431A STA434A STA457C STA458C SLA4310 SLA4313 SLA4340 SLA4390 SLA4391 SLA8001 SLA6023 driver schematic UDN2983A equivalent SMA4033 ULN2068LB STA431A STA458C UDN2580A udn darlington driver ic SLA4031 T02EB0 PDF

    SLA6023 driver schematic

    Abstract: pinout sla6023 sma4033 SLA6022 driver schematic SLA*6022 udn darlington driver ic SMA4032 SLA6022 sanken 2596 regulators SLA4031
    Text: POWER & DISPLAY DRIVERS 431 THRU 458, 4310 THRU 4391, 5022 THRU 6030, AND 8001 BRIDGE AND HALF-BRIDGE TRANSISTOR ARRAYS Part Number STA431A STA434A STA457C STA458C SLA4310 SLA4313 SLA4340 SLA4390 SLA4391 SLA8001 SLA5022 SMA6010 SLA6012 SMA6014 SLA6020 SLA6022


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    STA431A STA434A STA457C STA458C SLA4310 SLA4313 SLA4340 SLA4390 SLA4391 SLA8001 SLA6023 driver schematic pinout sla6023 sma4033 SLA6022 driver schematic SLA*6022 udn darlington driver ic SMA4032 SLA6022 sanken 2596 regulators SLA4031 PDF

    CNY47/47A

    Abstract: No abstract text available
    Text: 3875081 G E S O L ID STATE Optoelectronic Specifications_ H A R R IS S EfllC O N D S EC T O R 01E 3?E D B 4302571 19846 D G0e73afl T-W I • HAS 3 Photon Coupled Isolator C N Y47,CN Y47A Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor INCH


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    G0e73afl CNY47 S-42662 92CS-429S1 CNY47/47A PDF

    transistor f420

    Abstract: F420 transistor t430 transistor T591 transistor LT 5222 2SC1940 LT 745 S ifr 220 IFR 730 transistor A514
    Text: NEC Ai > ij n ^ Silico n T r a n s is to r h > ^ X 2SC1940 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-MM/ PA C K A G E D IM EN SIO N S Unit : mm * T" A ^ T > 7 ° < 7 ) 7 ° U O S u i t a b l e for d r i v e r of audio f re q u e n c y ampli f i er a ppl i c at i ons.


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    2SC1940 2SA9151 2SA915. -r700 /700Ut) 8686CK) T-880 transistor f420 F420 transistor t430 transistor T591 transistor LT 5222 2SC1940 LT 745 S ifr 220 IFR 730 transistor A514 PDF

    TRANSISTOR J 5804

    Abstract: j 5804 transistor j 5804 8205 A mosfet transistor 5910 6811 brushless pwm ac chopper 8205 dual mosfet BIT 3195 TMIS-3185/480/3P
    Text: TABLE OF CONTENTS General Information . page 2 Product Selection Guides • ■ ■ ■ ■ ■ ■ ■ Power Sink Drivers . 3


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    PDF

    2N3016

    Abstract: 13421 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2855-1 2N2856-1
    Text: 17 SILICON POWER TRANSISTORS CURREN T G A IN S A TURATIO N VO LTAG ES 8> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M A X. V CE 'c V A V CE s V BE(s) V I V *C A I *B A 5 AMP SILICON NPN 2 N2657 2N2658 2N2850-1 TO-5 TO-5 TO-5 80 100 100 60


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    2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2855-1 2N2856-1 2N2877 O-111 2N3016 13421 PDF

    transistor 1000V

    Abstract: RURP1580
    Text: m h a rp u s c ti RURP1570, RURP1580 RURP1590, RURP15100 15A, 700V - 1 000V Ultrafast Diodes December 1993 Package Features • Ultrafast with Soft Recovery Characteristic tRR< 100ns JEDEC T0-220AC TOP VIEW • +175°C Rated Junction Temperature • Reverse Voltage Up to 1000V


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    RURP1570, RURP1580 RURP1590, RURP15100 T0-220AC 100ns) RURP1580, RURP15100 transistor 1000V PDF

    RUR1560

    Abstract: MURI560 RUR15100 RUR1550 Diode MUR1560 RUR1540 MUR1550 Silicon Diode Switching Diode 700v 600V 25A Ultrafast Diode MUR1540
    Text: 2 HARRIS SbE D • 4 3 02 2 7 1 0 0 4 2 3 5 3 5TT ■ M U R 1540 MUR1550 HAS M U R 1 5 6 0 15A Ultrafast Diode With Soft Recovery Characteristic May 1991 HARRIS SEMICOND SECTOR - re a iu re s Package TO-220AC TOP VIEW • Ultrafast with Soft Recovery Characteristic


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    H3GS271 DGME353 MURI540 RUR1540 RUR1550 MURI560 RUR1560 MUR1540, MUR1550, MUR1560 RUR1560 RUR15100 Diode MUR1560 MUR1550 Silicon Diode Switching Diode 700v 600V 25A Ultrafast Diode MUR1540 PDF

    RUR15100

    Abstract: RUR1590 RUR1580 diode rur15100 RUR1570
    Text: / HARRIS SEMICOND SECTOR SbE D •■ , R U R 1 5 70 1580 1 U R 1 5 9 0 /1 5 1 0 0 fi HARRIS ■HAS 15A Ultrafast Diode With Soft Recovery Characteristic 4302271 004230b 20e! August 1991 o B '- n Features • Ultrafast with Soft Recovery Characteristic (trr < 100ns


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    M302271 100ns) RUR1580, RUR1590, RUR15100 004E3flà RUR1590 RUR1580 diode rur15100 RUR1570 PDF

    EMA212

    Abstract: EN61000-3-3 EN61000-4-4 EN61000-4-5 EN61000-4-6
    Text: AC-DC 212 Watts xppower.com EMA212 Series • 3.00” x 5.00” x 1.34” • High Power Density - 10.6 W/in3 • Up to 90% Efficiency • 5 V Standby & 12 V Fan Outputs • Active Current Share • Remote On/Off • Power Good Signal • 48 VDC Input Versions Available DMA212


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    EMA212 DMA212) VAC/50 VAC/60 Signa31 24-Sept-08 EMA212 EN61000-3-3 EN61000-4-4 EN61000-4-5 EN61000-4-6 PDF

    AHP200 Series

    Abstract: No abstract text available
    Text: AC-DC Converters www.powersolve.co.uk AHP 200 Series Up to 212 Watts Output Features • • • • • • • • 3.00” x 5.00” x 1.34” High Power Density - 10.6 W/in3 Up to 90% Efficiency 5 V Standby & 12 V Fan Outputs Active Current Share Remote On/Off


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    DAHP200 VAC/50 VAC/60 AHP200 Series PDF

    EMA212

    Abstract: EN61000-3-3 EN61000-4-4 EN61000-4-5
    Text: AC-DC 212 Watts xppower.com EMA212 Series • High Power Density - 10.6 W/in3 • Industry Standard 3 x 5 Footprint • Up to 90% Efficiency • 5 V Standby & 12 V Fan Outputs • Remote On/Off & Power Good Signal • 48 VDC Input Version Available DMA212


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    EMA212 DMA212) VAC/50 VAC/60 EMA212 DMA21248S12 06-May-09 EN61000-3-3 EN61000-4-4 EN61000-4-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: AC-DC 212 Watts xppower.com EMA212 Series • High Power Density - 10.6 W/in3 • Industry Standard 3 x 5 Footprint • Up to 90% Efficiency • 5 V Standby & 12 V Fan Outputs • Remote On/Off & Power Good Signal • 48 VDC Input Version Available DMA212


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    EMA212 DMA212) VAC/50 VAC/60 EMA212 DMA21248S12 06-May-09 PDF

    Sonneberg

    Abstract: service-mitteilungen Elegant 6360 2SC684 scans-048 SE3001 POTENTIOMETER 500 OHM ba 6370 "service-mitteilungen" Elegant de luxe
    Text: SERVICE-MITTEILUNGEN iR iid ri! R a d i o -television |VEB IN D U ST RI E V ER TRI EB R U N D F U N K U N D F E R N S E H E N AUSGABE: 15/73 DATUM: Nov. 1973 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Ausbau des Bedienteiles und Herstellen der Steckverbindungen beim VTSIOTRON 113_


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    der120 Sonneberg service-mitteilungen Elegant 6360 2SC684 scans-048 SE3001 POTENTIOMETER 500 OHM ba 6370 "service-mitteilungen" Elegant de luxe PDF