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    28C256-15 EEPROM Search Results

    28C256-15 EEPROM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    FM93CS46M8 Rochester Electronics LLC 93CS46 - EEPROM, 64X16, Serial, CMOS, PDSO8 Visit Rochester Electronics LLC Buy
    NM93C56EN Rochester Electronics LLC 93C56 - EEPROM, 128X16, Serial, CMOS, PDIP8 Visit Rochester Electronics LLC Buy
    X28C512DM-15 Rochester Electronics LLC X28C512 - EEPROM, 64KX8, 150ns, Parallel, CMOS, CDIP32 Visit Rochester Electronics LLC Buy
    X28C512JI-15 Rochester Electronics LLC X28C512 - EEPROM, 64KX8, 150ns, Parallel, CMOS, PQCC32 Visit Rochester Electronics LLC Buy
    NM25C041EM8 Rochester Electronics LLC 25C041 - EEPROM, 512X8, Serial, CMOS, PDSO8 Visit Rochester Electronics LLC Buy

    28C256-15 EEPROM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EEPROM 28C256

    Abstract: 28C256 microchip 28C256 28 pin 28c256 28C256-90
    Text: Military St 28C256 M icro ch ip 256K 32K x 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION • Fast read access time—90,120,150 ns maximum • CMOS Technology for low power dissipation —80 mA active —350 |xA standby • Fast byte-write time—3 ms or 10 ms


    OCR Scan     		28C256 -28-with DS60025B-7 28C256 150nsec 120nsec MIL-STD-883C DS60025B-8 EEPROM 28C256 28C256 microchip 28 pin 28c256 28C256-90 PDF

    28C256B

    Abstract: EEPROM 28C256 28C256 microchip
    Text: & 28C256 M ic r o c h ip 256K 32K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 90, 120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA A ctive - 150nA Standby • Fast W rite Cycle Times


    OCR Scan     		250ns 150nA 64-Byte DS11116C-7 28C256 28C256- 120ns 150ns 200ns 28C256B EEPROM 28C256 28C256 microchip PDF

    1N914

    Abstract: 28C256 28C256-12 28C256-15 CAT28C256 CAT28C256NI-15T
    Text: CAT28C256 256K-Bit Parallel EEPROM FEATURES • Fast read access times: 120/150ns ■ Hardware and software write protection ■ Low power CMOS dissipation: ■ Automatic page write operation: –1 to 64 bytes in 5ms –Page load timer –Active: 25 mA max


    Original     		CAT28C256 256K-Bit 120/150ns CAT28C256 8mmx13 500/Reel 120ns 150ns 28C256 CAT28C256NI-15T 1N914 28C256-12 28C256-15 CAT28C256NI-15T PDF

    28 pin 28c256

    Abstract: CAT28C256 1N914 28C256 28C256-12 28C256-15 CAT28C256NI-15T
    Text: CAT28C256 32K-Bit Parallel EEPROM FEATURES • Fast Read Access Times: 120/150ns ■ Hardware and Software Write Protection ■ Low Power CMOS Dissipation: ■ Automatic Page Write Operation: –1 to 64 Bytes in 5ms –Page Load Timer –Active: 25 mA Max.


    Original     		CAT28C256 32K-Bit 120/150ns CAT28C256 8mmx13 500/Reel 120ns 150ns 28C256 CAT28C256NI-15T 28 pin 28c256 1N914 28C256-12 28C256-15 CAT28C256NI-15T PDF

    26c256

    Abstract: EEPROM 28C256 EEPROM 26C256 26c256-10 28C256 2BC256-15 28C256-07 28C256-10 ST 28C256
    Text: > w REVISIONS |VM DATE CN oucfttmo* *HT it w tM S \'r S, x 006046 a x . PRELIMINARY CUSTOMER PROCUREMENT SPECI FI CA TIO N 28C236 236K SHKCT 1-10 LA *T«V 8 H IC T LAST ft V OISTMltUTlOM Ltrr PLANT INbI K U M SUPERSEDES M r □ v r MICROELECTRONICS OIIOUP


    OCR Scan     		2BC236 28C256) OflMiei04 8C256 52Kx8) 26c256 EEPROM 28C256 EEPROM 26C256 26c256-10 28C256 2BC256-15 28C256-07 28C256-10 ST 28C256 PDF

    1N914

    Abstract: 28C256 CAT28C256 MS-011 MS-016
    Text: CAT28C256 256 kb Parallel EEPROM Description The CAT28C256 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write


    Original     		CAT28C256 CAT28C256 CAT28C256/D 1N914 28C256 MS-011 MS-016 PDF

    28C256 seeq

    Abstract: EEPROM 28C256 seeq 28C256
    Text: 28C256 Technology, Incorporated Timer E2 256K Electrically Erasable PROM August 1992 Features Military, Extended and Commercial Temperature Range • -5 5 °C to +125° C Operation Military . -4 0 ° C to +85°C Operation (Extended) • 0°C to +70°C Operation (Commercial)


    OCR Scan     		28C256 28C256 MD400099/A 28C256 seeq EEPROM 28C256 seeq 28C256 PDF

    Untitled

    Abstract: No abstract text available
    Text: CAT28C256 256 kb Parallel EEPROM Description The CAT28C256 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write


    Original     		CAT28C256 CAT28C256 CAT28C256/D PDF

    CAT28C256L12

    Abstract: No abstract text available
    Text: CAT28C256 256 kb Parallel EEPROM Description The CAT28C256 is a fast, low power, 5 V−only CMOS Parallel EEPROM organized as 32K x 8−bits. It requires a simple interface for in−system programming. On−chip address and data latches, self−timed write cycle with auto−clear and VCC power up/down write


    Original     		CAT28C256 CAT28C256/D CAT28C256L12 PDF

    AM28C256

    Abstract: 28C256-250 am2864a pinout data 28C256 28C256-300 28C256-350 am2864
    Text: Am28C256 32K x 8 Electrically Erasable PROM Am28C256 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • - 100 /uA power-down current 64-byte page write Software-write protection Minimum endurance of 10,000 write cycles per byte with a ten year data retention


    OCR Scan     		Am28C256 64-byte WF022251 A10-A14, 28C256-250 am2864a pinout data 28C256 28C256-300 28C256-350 am2864 PDF

    KM28C256-15

    Abstract: 28c256 samsung
    Text: KM28C256 CMOS EEPROM 32Kx8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C256: Commercial — KM28C256I: Industrial • Simple Byte W rite & Page W rite — Single TTL Level W rite Signal — Internal Address and Data Latch


    OCR Scan     		KM28C256 32Kx8 KM28C256: KM28C256I: 64-byte 150ns 60mA-- 28C256 KM28C256-15 28c256 samsung PDF

    Untitled

    Abstract: No abstract text available
    Text: KM28C256 CMOS EEPROM 3 2 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C256: Commercial — KM28C256I: Industrial • Simple Byte Write & Page Write — Single TTL Level Write Signal — Internal Address and Data Latch


    OCR Scan     		KM28C256 KM28C256: KM28C256I: 64-byte 150ns 100/j PDF

    AT28C256 rad

    Abstract: 197a8 radiation hardened prom WY smd transistor
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V Product Description Features Radiation Other • Fabricated with Bulk CMOS 0.8 µm Process • Read/Write Cycle Times ≤45 ns, (TC = -55°C to 125°C) • Total Dose Hardness through 2 × 105 rad(Si)


    Original     		5962R96891 197A807 28-Lead 28C256 AT28C256. AS9000, PUBS-01-B22-Q-011 MVA01-012 AT28C256 rad 197a8 radiation hardened prom WY smd transistor PDF

    prom 238A790

    Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


    Original     		238A790 2x105 1x1012 28-Lead 28C256 AT28C256. AS9000, prom 238A790 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite BAE Systems PDF

    197A807

    Abstract: BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V 197A807 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


    Original     		197A807 2x105 1x1012 5962R96891 28-Lead 28C256 AT28C256. AS9000, 197A807 BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4 PDF

    Untitled

    Abstract: No abstract text available
    Text: MODULES M28C010 Timer E 2 1024K Electrically Erasable PROM October 1989 Description Features • SEEQ's MM28C010 is a CMOS 5V only, 128Kx 8 Elec­ trically Erasable Programmable Read Only Memory EEPROM . The MM28C010 consists o f4 28C256 (32K x 8) CMOS EEPROMs and a 2 to 4 line decoder in LCC


    OCR Scan     		M28C010 1024K MM28C010 128Kx 28C256 32pinmodule MD400044/B 28C010 PDF

    Untitled

    Abstract: No abstract text available
    Text: Am28C256 3 2Kx8 Electrically Erasable PROM Am28C256 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current - 1 mA standby current • • • - 1 0 0 pA power-down current


    OCR Scan     		Am28C256 64-byte PDF

    sumitomo epoxy 6600

    Abstract: sumitomo epoxy 1143 at27c256 data retention AT29LV020 sumitomo silver epoxy 28BV256 0c002 ATMEL AT27lv256 AT49*512 AT28C256
    Text: Parallel EEPROM 256Kbit Qualification Summary § Component Design & Construction Description § Test Summary Oper Life Test Data Retention Endurance Rel Humidity Autoclave Temp Cycle ESD Latch-up Electrical Dist./Char. available per request Plastic Package (TSOP, SOIC, PLCC)


    Original     		256Kbit AT28BV256 AT28C256 AT28HC256 32Kbit AT28C256, AT28C256F, AT28HC256, AT28HC256F, 1W0117 sumitomo epoxy 6600 sumitomo epoxy 1143 at27c256 data retention AT29LV020 sumitomo silver epoxy 28BV256 0c002 ATMEL AT27lv256 AT49*512 AT28C256 PDF

    Untitled

    Abstract: No abstract text available
    Text: 11E » SEEÛ TECHNOLOGY INC • a i n S 3 3 QQOEbTÔ fl MODULES M28C010 Timer E 2 1024K Electrically Erasable PROM October 1989 Description Features SEEQ's MM28C010 is a CMOS 5 V only, 128Kx8Electrically Erasable Programmable Read Only Memory EEPROM . The MM28C010 consists o f4 28C256 (32K


    OCR Scan     		M28C010 1024K MM28C010 128Kx8Electrically 28C256 TheMM28C010isavailableina 32pin MM28C010 T-46-13-27 PDF

    28C256-12

    Abstract: CAT28C256 EEPROM 28C256 28C256 28C256-15 CAT28C256NI-15T 1N914 28C256-15 eeprom
    Text: H CAT28C256 EE GEN FR ALO 256K-Bit Parallel EEPROM LE A D F R E ETM FEATURES • Fast read access times: 120/150ns ■ Hardware and software write protection ■ Low power CMOS dissipation: ■ Automatic page write operation: –1 to 64 bytes in 5ms –Page load timer


    Original     		CAT28C256 256K-Bit 120/150ns CAT28C256 28C256-12 EEPROM 28C256 28C256 28C256-15 CAT28C256NI-15T 1N914 28C256-15 eeprom PDF

    free circuit eeprom programmer

    Abstract: No abstract text available
    Text: CAT28C256 256K-Bit PARALLEL EEPROM FEATURES • Fast read access times: 120/150ns ■ Hardware and software write protection ■ Low power CMOS dissipation: ■ Automatic page write operation: –1 to 64 bytes in 5ms –Page load timer –Active: 25 mA max


    Original     		CAT28C256 256K-Bit 120/150ns CAT28C256 MD-1004, free circuit eeprom programmer PDF

    1N914

    Abstract: 28C256 28C256-12 28C256-15 CAT28C256 CAT28C256NI-15T
    Text: H EE GEN FR ALO CAT28C256 256K-Bit Parallel EEPROM LE A D F R E ETM FEATURES • Fast read access times: 120/150ns ■ Hardware and software write protection ■ Low power CMOS dissipation: ■ Automatic page write operation: –1 to 64 bytes in 5ms –Page load timer


    Original     		CAT28C256 256K-Bit 120/150ns CAT28C256 1N914 28C256 28C256-12 28C256-15 CAT28C256NI-15T PDF

    am28c256

    Abstract: No abstract text available
    Text: Am28C256 3 2 K x 8 Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current - 1 mA standby current • • • - 100 /uA power-down current 64-byte page write


    OCR Scan     		Am28C256 64-byte Am2864A Am2864B PDF

    CAT28C257

    Abstract: 1N914 28C256 CAT28C257NI-90T
    Text: H EE GEN FR ALO CAT28C257 256K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Automatic page write operation: ■ Fast read access times: 120/150 ns –1 to 128 Bytes in 5ms –Page load timer ■ Low power CMOS dissipation: –Active: 25 mA max. –Standby: 150 µA max.


    Original     		CAT28C257 256K-Bit CAT28C257 1N914 28C256 CAT28C257NI-90T PDF