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    28F020 FLASH Search Results

    28F020 FLASH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TN28F020-150 Rochester Electronics LLC 28F020 - 256K X 8 Flash Visit Rochester Electronics LLC Buy
    TN28F020-90 Rochester Electronics LLC 28F020 - 2048K (256K x 8) CMOS Flash Memory Visit Rochester Electronics LLC Buy
    MD28F020-90 Rochester Electronics LLC 28F020 - 2048K (256K x 8) CMOS Flash Memory Visit Rochester Electronics LLC Buy
    MD28F020-90/B Rochester Electronics LLC 28F020 - 2048K (256K x 8) CMOS Flash Memory Visit Rochester Electronics LLC Buy
    MD28F020-12/B Rochester Electronics LLC 28F020 - 2048K (256K x 8) CMOS Flash Memory Visit Rochester Electronics LLC Buy

    28F020 FLASH Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    28F020

    Abstract: intel DOC
    Text: 28F020 SPECIFICATION UPDATE Release Date: June, 1997 Order Number: 297847-001 The 28F020 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this


    Original     		28F020 28F020 intel DOC PDF

    20f020

    Abstract: No abstract text available
    Text: 28F020 Program-Verify Command The 28F020 is programmed on a byte-by-byte basis. Byte programming may occur sequentially or at random. Following each programming operation, the byte just programmed must be verified. The program-verify operation is initiated by writing


    OCR Scan     		28F020 28F020 20f020 PDF

    28F020

    Abstract: 28F010 intel DOC
    Text: 5 VOLT BULK ERASE FLASH MEMORY 28F020 x8 SPECIFICATION UPDATE Release Date: February, 1999 Order Number: 297847-002 The 28F020 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this


    Original     		28F020 28F010 intel DOC PDF

    28F002-T

    Abstract: No abstract text available
    Text: APPLICATION NOTE 2M FLASH MEMORY Yes. You can replace Intel 2M flash very easily with Macronix’s flash. Intel Part Number 28F200-T 28F200-B 28F002-T 28F002-B 28F020 Replace with MX28F2100T MX28F2100B MX28F002-T MX28F002-B MX28F2000P Configuration, Package


    Original     		28F200-T 28F200-B 28F002-T 28F002-B 28F020 MX28F2100T MX28F2100B MX28F002-T MX28F002-B MX28F2000P 28F002-T PDF

    PPH 2222 36

    Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010
    Text: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface


    OCR Scan     		28F010 28F020 32-Lead 28F010-90 28F010-120 28F010-150 28F020-90 PPH 2222 36 29f020 P28F010-150 29020 28F010-150N PDF

    IN6AG

    Abstract: 28F020 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		28F020 2048K 32-Pin 32-LEAD P28F020-70 N28F020-70 P28F020-90 IN6AG intel 28F020 PDF

    29F020

    Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020
    Text: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface


    OCR Scan     		28F010 28F020 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 E28F010-150 TE28F010-90 29F020 28F020 80C186 E28F010 N28F010 P28F010 29020 PDF

    2046K

    Abstract: 28F020 SmartDie 29024
    Text: in t e * 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 2 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 /xs Typical Byte Program — 4 Second Chip Program 100K Erase/Program Cycles Typical


    OCR Scan     		28F020 2048K X28F020-90 ER-20, ER-24, RR-60, AP-316, AP-325, 2046K SmartDie 29024 PDF

    P28F020-150

    Abstract: 28F020 80C186 E28F020 F28F020 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		28F020 2048K ER-20, ER-24, ER-28, RR-60, AP-316, AP-325 -80V05, -80V05 P28F020-150 28F020 80C186 E28F020 F28F020 intel 28F020 PDF

    Untitled

    Abstract: No abstract text available
    Text: in te l 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read


    OCR Scan     		28F020 2048K AP-316 AP-325 -80V05, -80V05 28F020 4a2bl75 Qlbb077 PDF

    intel eprom Intelligent algorithm

    Abstract: 28F020 32-PIN E28F020 F28F020 N28F020 P28F020 intel 28F020
    Text: int ! 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jlls Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP High-Performance Read


    OCR Scan     		28F020 2048K 28F020 AP-316 AP-325 -80V05, -80V05 intel eprom Intelligent algorithm 32-PIN E28F020 F28F020 N28F020 P28F020 intel 28F020 PDF

    SSC16E

    Abstract: N28F020-200 28F020-150 29024 28F020 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Noise Immunity Features — +10% Vcc Tolerance — Maximum Latch-Up Immunity through EPI Processing ■ Quick-Pulse Programming Algorithm — 10 f i s Typical Byte-Program


    OCR Scan     		28F020 2048K 28F020 32-PIN 32-LEAD P28F020-150 N28F020-150 P28F020-200 SSC16E N28F020-200 28F020-150 29024 intel 28F020 PDF

    Untitled

    Abstract: No abstract text available
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P r o g r a m m i n g Algorithm — 10 fis Typical Byte-Program


    OCR Scan     		28F020 2048K ER-20, ER-24, AP-316, AP-325 -80V05, RR-60, ER-28, PDF

    28F020

    Abstract: 80C186 80c186 specification update
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 4 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read


    Original     		28F020 2048K 32-Pin 32-Lead AP-325 ER-20 -80V05 28F020 80C186 80c186 specification update PDF

    Untitled

    Abstract: No abstract text available
    Text: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 \iS Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp


    OCR Scan     		28F020 2048K 32-Lead E28F020-90 E28F020-120 E28F020-150 TE28F020-90 TE28F020-120 TE28F020-150 PDF

    B1560

    Abstract: B1560 equivalent 28f020 transistor B1560 294005 B1205 b1770 b439 AP-316 AP-325
    Text: 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Y Flash Electrical Chip Erase 2 Second Typical Chip Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte Program 4 Second Chip Program Y 100K Erase Program Cycles Typical Y 12 0V g 5% VPP


    Original     		28F020 2048K 8F020 X28F020-90 ER-20 ER-24 RR-60 AP-316 B1560 B1560 equivalent transistor B1560 294005 B1205 b1770 b439 AP-325 PDF

    transistor a13

    Abstract: transistor A16 28F010 28F020 TSOP32 IC191 A1727 A1221
    Text: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming TSOP32 -2.HSP SOCKET BOARD REVERSE PINOUT OF TSOP32.HSP v Date : 1998/11/25 v Board ID : 17h v Socket : IC191-0322-001 (YAMAICHI) v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F010, 28F020


    Original     		TSOP32 IC191-0322-001 28F010, 28F020 32-LEAD transistor a13 transistor A16 28F010 28F020 IC191 A1727 A1221 PDF

    i80C186

    Abstract: M28F020 29024
    Text: in tj 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		28F020 2048K 32-Pin 32-Lead -32-Lead -80V05, -80V05 AP-325 i80C186 M28F020 29024 PDF

    28F020

    Abstract: CAT28F020 Nippon capacitors
    Text: CAT28F015 Cost Effective Solution for the 2 MB Flash CAT28F015 Licensed Intel second source 1.5 Megabit CMOS Flash Memory FEATURES • Stop Timer for Program/Erase ■ Fully Compatible to 2 MB Flash 28F020 – No hardware or software changes ■ On-Chip Address and Data Latches


    Original     		CAT28F015 28F020) 32-pin 300-T 28F020 CAT28F020 Nippon capacitors PDF

    intel 80c186

    Abstract: F28F020-90 N28F020-150 28F020 E28F020-150 N28F020-90 80C186 A80C186 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 4 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read


    Original     		28F020 2048K 32-Pin 32-Lead ER-28 AP-316 AP-325 ER-20 -80V05 intel 80c186 F28F020-90 N28F020-150 28F020 E28F020-150 N28F020-90 80C186 A80C186 intel 28F020 PDF

    Untitled

    Abstract: No abstract text available
    Text: ß R lIÜ M M tf In te l 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 2 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 ¡xs Typical Byte Program — 4 Second Chip Program 100K Erase/Program Cycles Typical


    OCR Scan     		28F020 2048K X28F020-90 ER-20, ER-24, RR-60, AP-316, AP-325, PDF

    Untitled

    Abstract: No abstract text available
    Text: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jLis Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp • Command Register Architecture for


    OCR Scan     		28F020 2048K AP-325 -80V05, -80V05 28F020 PDF

    Untitled

    Abstract: No abstract text available
    Text: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% Vpp ■ High-Performance Read


    OCR Scan     		28F020 2048K 32-Pin 32-Lead PDF

    TN28F020-150

    Abstract: 28F020 80C186 intel 28F020
    Text: E n n n n n n n 28F020 2048K 256K X 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase  2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µS Typical Byte-Program  4 second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% VPP


    Original     		28F020 2048K 32-Lead E28F020-90 N28F020-90 E28F020-120 N28F020-120 E28F020-150 N28F020-150 TN28F020-150 80C186 intel 28F020 PDF