5962-8863901
Abstract: No abstract text available
Text: 54FCT573 Octal D-Type Latch with TRI-STATE Outputs General Description Features The ’FCT573 is an octal latch with buffered common Latch Enable LE and buffered common Output Enable (OE) inputs. This device is functionally identical to the ’FCT373 but has
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54FCT573
FCT573
FCT373
5962-886390ze
8639012A
96288639012A
5962Cerdip
5962-8863901
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PDF
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Untitled
Abstract: No abstract text available
Text: 100307 Low Power Quint Exclusive OR/NOR Gate General Description The 100307 is monolithic quint exclusive-OR/NOR gate. The Function output is the wire-OR of all five exclusive-OR outputs. All inputs have 50 kΩ pull-down resistors. n n n n n Features 2000V ESD protection
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Out7000
100307DMQB
9459001MX
5962Full
9459001MYA
5962Cerdip
9459001VXA
100307J
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PDF
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M29F002BB
Abstract: M29F002BNT M29F002BT PDIP32 PLCC32 TSOP32 DATE code flash stmicroelectronics A/M29F002BT(45/55/70/90/GPIO26/SLG8SP553
Text: M29F002BT, M29F002BNT M29F002BB, M29F002BNB 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory • SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45 ns ■ PROGRAMMING TIME – 8 µs by Byte typical ■ 7 MEMORY BLOCKS
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M29F002BT,
M29F002BNT
M29F002BB,
M29F002BNB
256Kb
PLCC32
TSOP32
PDIP32
M29F002BB
M29F002BNT
M29F002BT
PDIP32
PLCC32
TSOP32
DATE code flash stmicroelectronics
A/M29F002BT(45/55/70/90/GPIO26/SLG8SP553
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PDF
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CERPAK
Abstract: No abstract text available
Text: 54FCT240 Octal Buffer/Line Driver with TRI-STATE Outputs General Description Features The 54FCT240 is an octal buffer and line driver designed to be employed as a memory address driver, clock driver and bus oriented transmitter or receiver which provides improved
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54FCT240
54FCT240DMQB
54FCT240FMQB
54FCT240LMQB
20-Lead
Dual-In-Line01RA
96287655012A
CERPAK
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PDF
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ECL 100304
Abstract: No abstract text available
Text: 100304 Low Power Quint AND/NAND Gate General Description The 100304 is monolithic quint AND/NAND gate. The Function output is the wire-NOR of all five AND gate outputs. All inputs have 50 kΩ pull-down resistors. n n n n n Features 2000V ESD protection Pin/function compatible with 100104
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DS100304-1
Outp7000
100304DMQB
9153701MX
5962Full
9153701MYA
5962Cerdip
9153701VXA
100304J
ECL 100304
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PDF
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Untitled
Abstract: No abstract text available
Text: 100301 Low Power Triple 5-Input OR/NOR Gate General Description The 100301 is a monolithic triple 5-input OR/NOR gate. All inputs have 50 kΩ pull-down resistors and all outputs are buffered. n n n n 2000V ESD protection Pin/function compatible with 100101
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DS100302-1
DS100302
24-Pin
9152801MXA
100301J
915280VXA
00301W
5962Full
9152801MYA
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PDF
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54FCT138DMQB
Abstract: No abstract text available
Text: 54FCT138 1-of-8 Decoder/Demultiplexer General Description Features The FCT138 is a high-speed 1-of-8 decoder/demultiplexer. This device is ideally suited for high-speed bipolar memory chip select address decoding. The multiple input enables allow parallel expansion to a 1-of-24 decoder using just three
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54FCT138
FCT138
1-of-24
1-of-32
7654012A
54FCT138DM
54FCT138DM
54FCT138DMQB
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PDF
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M29F002BB
Abstract: M29F002BNT M29F002BT PLCC32 TSOP32 CP 2AA
Text: M29F002BT, M29F002BNT M29F002BB, M29F002BNB 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory • SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45 ns ■ PROGRAMMING TIME – 8 µs by Byte typical ■ 7 MEMORY BLOCKS
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M29F002BT,
M29F002BNT
M29F002BB,
M29F002BNB
256Kb
TSOP32
PLCC32
M29F002BB
M29F002BNT
M29F002BT
PLCC32
TSOP32
CP 2AA
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PDF
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M29F010B
Abstract: Device M29F010B AN1122 PDIP32 PLCC32 TSOP32 M29F010
Text: M29F010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45 ns ■ PROGRAMMING TIME – 8 µs per Byte typical ■ 8 UNIFORM 16 KBytes MEMORY BLOCKS ■ PROGRAM/ERASE CONTROLLER
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M29F010B
128Kb
PLCC32
TSOP32
PDIP32
M29F010B
Device M29F010B
AN1122
PDIP32
PLCC32
TSOP32
M29F010
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PDF
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M29F040
Abstract: M29F040B PDIP32 PLCC32 TSOP32
Text: M29F040B 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory • SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8 µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS ■
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M29F040B
512Kb
PLCC32
TSOP32
PDIP32
M29F040
M29F040B
PDIP32
PLCC32
TSOP32
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PDF
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AN1122
Abstract: JESD97 M29F010B PLCC32 TSOP32
Text: M29F010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45 ns ■ PROGRAMMING TIME – 8 µs per Byte typical ■ 8 UNIFORM 16 KBytes MEMORY BLOCKS ■ PROGRAM/ERASE CONTROLLER
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M29F010B
128Kb
PLCC32
TSOP32
AN1122
JESD97
M29F010B
PLCC32
TSOP32
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PDF
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54AC10
Abstract: JM38510 fairchild
Text: 54AC10 Triple 3-Input NAND Gate General Description The ’AC10 contains three, 3-input NAND gates. Features n Outputs source/sink 24 mA n Standard Military Drawing SMD — ’AC10: 5962-87610 n For Military 54ACT10 device see the 54ACTQ10 n ICC reduced by 50% on 54AC only
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54AC10
54ACT10
54ACTQ10
DS100261-1
DS100261-3
DS100261-2
DS100261
JM38510R75002SD
AN-925:
JM38510 fairchild
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PDF
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863ac
Abstract: 54F374FMQB 54F374
Text: 54F 74F374 Octal D-Type Flip-Flop with TRI-STATE Outputs General Description Features The ’F374 is a high-speed low-power octal D-type flip-flop featuring separate D-type inputs for each flip-flop and TRI-STATE outputs for bus-oriented applications A buffered Clock CP and Output Enable (OE) are common to all
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74F374
74F374PC
20-Lead
20-Lead
Sma74FMQB
54F374DC
JM38510/34105B2
JM38510/34105BR
863ac
54F374FMQB
54F374
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PDF
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9520
Abstract: 54F11LMQB
Text: General Description This device contains three independent gates, each of which performs the logic AND function. Ordering Code: See Section 0 Commercial Military Package Package Description Number 74F11PC N14A 14-Lead 0.300" Wide Molded Dual-In-Line J14A
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54F/74F11
54F/74F11
74F11PC
54F11DM
54F11FM
54F11LM
14-Lead
14-Lead
9520
54F11LMQB
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PDF
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54ACT04
Abstract: JM38510 fairchild 54AC04 DIE ac04
Text: 54AC04 Hex Inverter General Description Features The AC04 contains six inverters. n n n n ICC reduced by 50% on 54AC only Outputs source/sink 24 mA ’ACT04 has TTL-compatible inputs Standard Military Drawing SMD — ’AC04: 5962–87609 n For Military 54ACT04 device see 54ACTQ04
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54AC04
ACT04
54ACT04
54ACTQ04
DS100259-1
DS100259-3
DS100259-2
DS100259
AN-925:
JM38510 fairchild
54AC04 DIE
ac04
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PDF
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A/M29F040B(45/55/70/GR-468
Abstract: AN1122 JESD97 M29F040 M29F040B PLCC32 TSOP32
Text: M29F040B 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory • SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8 µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS ■
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M29F040B
512Kb
PLCC32
TSOP32
A/M29F040B(45/55/70/GR-468
AN1122
JESD97
M29F040
M29F040B
PLCC32
TSOP32
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PDF
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M29F002BB
Abstract: M29F002BNT M29F002BT PDIP32 PLCC32 TSOP32
Text: M29F002BT, M29F002BNT M29F002BB, M29F002BNB 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory • SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45 ns ■ PROGRAMMING TIME – 8 µs by Byte typical ■ 7 MEMORY BLOCKS
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M29F002BT,
M29F002BNT
M29F002BB,
M29F002BNB
256Kb
PLCC32
TSOP32
PDIP32
M29F002BB
M29F002BNT
M29F002BT
PDIP32
PLCC32
TSOP32
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PDF
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M29F040
Abstract: M29F040B PDIP32 PLCC32 TSOP32 AI02902
Text: M29F040B 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory • SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8 µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS ■
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M29F040B
512Kb
PLCC32
TSOP32
PDIP32
M29F040
M29F040B
PDIP32
PLCC32
TSOP32
AI02902
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PDF
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Untitled
Abstract: No abstract text available
Text: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 35ns PROGRAMMING TIME – 8µs per Word typical
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M29F102BB
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PDF
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M29F STMicroelectronics
Abstract: No abstract text available
Text: M29F010B 1 Mbit 128Kb x8, uniform block single supply Flash memory Feature summary • Single 5V±10% supply voltage for Program, Erase and Read operations ■ Access time: 45 ns ■ Programming time – 8 µs per byte typical ■ 8 uniform 16 Kbytes memory blocks
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M29F010B
128Kb
M29F010B55K1
M29F010B
M29F STMicroelectronics
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PDF
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AN1122
Abstract: JESD97 M29F040 M29F040B PLCC32 TSOP32
Text: M29F040B 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory • SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8 µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS ■
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M29F040B
512Kb
PLCC32
TSOP32
AN1122
JESD97
M29F040
M29F040B
PLCC32
TSOP32
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PDF
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Untitled
Abstract: No abstract text available
Text: 100302 Low Power Quint 2-Input OR/NOR Gate General Description The 100302 is a monolithic quint 2-input OR/NOR gate with common enable. All inputs have 50 kΩ pull-down resistors and all outputs are buffered. n n n n 2000V ESD protection Pin/function compatible with 100102
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Original
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DS100303-1
H2000
100302DMQB
9152802MX
5962Full
9152802MYA
5962Cerdip
9152802VXA
100302J
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PDF
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CERPAK
Abstract: No abstract text available
Text: 100331 Low Power Triple D Flip-Flop General Description Features The 100331 contains three D-type, edge-triggered master/ slave flip-flops with true and complement outputs, a Common Clock CPC , and Master Set (MS) and Master Reset (MR) inputs. Each flip-flop has individual Clock (CPn), Direct
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100331DMQB
9153601MX
5962Full
9153601MYA
5962Cerdip
9153601VXA
100331J
9153601VYA
CERPAK
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PDF
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Untitled
Abstract: No abstract text available
Text: 54F 74F32 Quad 2-Input OR Gate General Description Features This device contains four independent gates each of which performs the logic OR function Y Commercial Guaranteed 4000V minimum ESD protection Package Number Military 74F32PC Package Description N14A
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74F32
74F32PC
14-Lead
14-Lead
20-Lead
54F32DM
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PDF
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