Untitled
Abstract: No abstract text available
Text: Advanced Technical Information VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω IXTH 28N50Q IXTT 28N50Q Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR
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28N50Q
O-247
728B1
123B1
728B1
065B1
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PDF
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28n50
Abstract: No abstract text available
Text: Advanced Technical Information IXFH 28N50Q IXFT 28N50Q HiPerFETTM Power MOSFETs Q-Class VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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Original
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28N50Q
O-247
728B1
123B1
728B1
065B1
28n50
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PDF
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28N50
Abstract: No abstract text available
Text: Advanced Technical Information VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω IXTH 28N50Q IXTT 28N50Q Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR
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Original
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28N50Q
O-247
728B1
123B1
728B1
065B1
28N50
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PDF
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28N50Q
Abstract: SiS 486 28n50
Text: Advanced Technical Information IXFH 28N50Q IXFT 28N50Q Power MOSFETs Q-Class VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500
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Original
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28N50Q
28N50Q
O-247
O-268
728B1
123B1
065B1
SiS 486
28n50
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PDF
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28N50
Abstract: No abstract text available
Text: Advanced Technical Information IXFH 28N50Q IXFT 28N50Q HiPerFETTM Power MOSFETs Q-Class VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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Original
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28N50Q
O-247
O-268
728B1
28N50
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXTH 28N50Q IXTT 28N50Q Power MOSFETs Q-Class VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR
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Original
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28N50Q
O-247
728B1
123B1
728B1
065B1
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω IXFH 28N50Q IXFT 28N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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Original
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28N50Q
O-247
O-268
728B1
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PDF
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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