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    29 TRANSISTOR Search Results

    29 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    29 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Q62702-C2136

    Abstract: Q62702-C2137
    Text: NPN Silicon Darlington Transistors BCP 29 BCP 49 For general AF applications ● High collector current ● High current gain ● Complementary types: BCP 28/48 PNP ● Type Marking Ordering Code (tape and reel) BCP 29 BCP 49 BCP 29 BCP 49 Q62702-C2136 Q62702-C2137


    Original     		Q62702-C2136 Q62702-C2137 OT-223 Q62702-C2136 Q62702-C2137 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Darlington Transistors • • • • BCP 29 BCP 49 For general AF applications High collector current High current gain Complementary types: BCP 28/48 PNP Type Marking Ordering Code (tape and reel) BCP 29 BCP 49 BCP 29 BCP 49 Q62702-C2136


    OCR Scan     		Q62702-C2136 Q62702-C2137 OT-223 CHP00252 PDF

    993 395 pnp npn

    Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10


    Original     		BRY61 BRY62 OT143B 993 395 pnp npn bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q PDF

    XC3S400-4PQ208C

    Abstract: XC3S500 XC3S400-4PQ208 XCN08011 XC3S1000-4FT256C 3S400 L02P UG130 RAMB16 L28n
    Text: PRODUCT NOT RECOMMENDED FOR NEW DESIGNS 1 Spartan-3 FPGA Family Data Sheet DS099 October 29, 2012 Module 1: Introduction and Ordering Information DS099 v3.0 October 29, 2012 Product Specification Module 4: Pinout Descriptions DS099 (v3.0) October 29, 2012


    Original     		DS099 DS099 XC3S400-4PQ208C XC3S500 XC3S400-4PQ208 XCN08011 XC3S1000-4FT256C 3S400 L02P UG130 RAMB16 L28n PDF

    xc3s500e vq100

    Abstract: m1l43 XC3S250E TQ144 STARTER KIT BOARD XC3S500EVQ100 Xilinx Parallel Cable IV spartan-3 XC3S500E-VQ100 SPARTAN 3e 1600e XC3S250E vqg100 XC3S500E FGG320
    Text: PRODUCT NOT RECOMMENDED FOR NEW DESIGNS 1 Spartan-3E FPGA Family Data Sheet DS312 October 29, 2012 Product Specification Module 1: Introduction and Ordering Information Module 3: DC and Switching Characteristics DS312 4.0 October 29, 2012 DS312 (4.0) October 29, 2012


    Original     		DS312 DS312 xc3s500e vq100 m1l43 XC3S250E TQ144 STARTER KIT BOARD XC3S500EVQ100 Xilinx Parallel Cable IV spartan-3 XC3S500E-VQ100 SPARTAN 3e 1600e XC3S250E vqg100 XC3S500E FGG320 PDF

    c1237

    Abstract: siemens CIB C1236
    Text: NPN Silicon Darlington Transistors • • • • BCP 29; BCP 49 For general AF applications High collector current High current gain C om plem entary types: BCP 28/48 PNP Type M a rk in g O rd e rin g c o d e (1 2 -m m ta p e ) P acka ge * BCP 29 BCP 29


    OCR Scan     		C1236 C1237 OT-223 OT-223 BCP49 siemens CIB PDF

    P621 1k

    Abstract: UL1557 HCPL4504 AC200V AC2500 P610 P621 6MBP75RTJ060 p621 b transistor p621
    Text: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP75RTJ060 Spec. No. : MS6M 0673 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘03 N.Matsuda Jan. 29 ‘03 Nishiura Jan.-29 -‘03 K.Yamada T.Fujihira MS6M 0673 a 1 22 H04-004-07 Revised Records Date


    Original     		6MBP75RTJ060 H04-004-07 H04-004-06 H04-004-03 P621 1k UL1557 HCPL4504 AC200V AC2500 P610 P621 6MBP75RTJ060 p621 b transistor p621 PDF

    P621

    Abstract: P621 1k AC200V AC2500 HCPL4504 P610 all transistor P621 6MBP50
    Text: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP50RTJ060 Spec. No. : MS6M 0671 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘03 N.Matsuda Jan. 29 ‘03 Nishiura Jan.-29 -‘03 K.Yamada T.Fujihira MS6M 0671 a 1 22 H04-004-07 Revised Records Date


    Original     		6MBP50RTJ060 H04-004-07 H04-004-06 H04-004-03 P621 P621 1k AC200V AC2500 HCPL4504 P610 all transistor P621 6MBP50 PDF

    6MBP150RTJ060

    Abstract: AC200V AC2500 HCPL4504 P610 P621 6mbp150 all transistor P621 P621 ic
    Text: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP150RTJ060 Spec. No. : MS6M 0677 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘03 N.Matsuda Jan. 29 ‘03 Nishiura Jan.-29 -‘03 K.Yamada T.Fujihira MS6M 0677 a 1 22 H04-004-07 Revised Records Date


    Original     		6MBP150RTJ060 H04-004-07 H04-004-06 H04-004-03 6MBP150RTJ060 AC200V AC2500 HCPL4504 P610 P621 6mbp150 all transistor P621 P621 ic PDF

    P621

    Abstract: IC P621 p621 b 18 p621 P621 capacitor 6MBP100RTJ060 AC200V AC2500 HCPL4504 P610
    Text: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP100RTJ060 Spec. No. : MS6M 0675 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘0 3 N.Matsuda Jan. 29 ‘0 3 Nishiura Jan.-29 -‘0 3 K.Yamada T.Fujihira MS6M 0675 a 1 22 H04-004-07 Revised Records


    Original     		6MBP100RTJ060 H04-004-07 H04-004-06 H04-004-03 P621 IC P621 p621 b 18 p621 P621 capacitor 6MBP100RTJ060 AC200V AC2500 HCPL4504 P610 PDF

    LD-15713-1

    Abstract: LQ150X1LGN2A THC63LVDM83R BLOCK DIAGRAM FOR LPG GAS DETECTION LD-15713A BHSR-02VS-1 DF14-2628SCFA KTBE24MSTF Stanley 1050 circuit diagram fluorescent lamp transistor Electronic ballast
    Text: PRODUCT SPECIFICATIONS AVC Liquid Crystal Displays Group LQ150X1LGN2A TFT-LCD Module Spec. Issue Date: Oct. 29, 2003 No: LD-15713A RECORDS OF REVISION LQ150X1LGN2A SPEC No. DATE No. LD-15713 Jul. 29. 2003 LD-15713A Oct. 29. 2003 SUMMARY REVISED NOTE PAGE 1st Issue


    Original     		LQ150X1LGN2A LD-15713A LD-15713 3000Vrms 2200Vrms LD-15713-1 LQ150X1LGN2A THC63LVDM83R BLOCK DIAGRAM FOR LPG GAS DETECTION LD-15713A BHSR-02VS-1 DF14-2628SCFA KTBE24MSTF Stanley 1050 circuit diagram fluorescent lamp transistor Electronic ballast PDF

    P621

    Abstract: 431w transistor P621 capacitor 431W p621 b 6MBP150RTJ060 AC200V AC2500 HCPL4504 P610
    Text: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP150RTJ060 Spec. No. : MS6M 0677 Fuji Electric Co.,Ltd. Matsumoto Factory Jan.29 ‘ 03 N.Matsuda Jan.29 ‘ 03 Nishiura Jan. 29‘ 03 K.Yamada T.Fujihira MS6M 0677 a 1 22 H04-004-07 Revised Records Date


    Original     		6MBP150RTJ060 H04-004-07 H04-004-06 H04-004-03 P621 431w transistor P621 capacitor 431W p621 b 6MBP150RTJ060 AC200V AC2500 HCPL4504 P610 PDF

    XQ2VP40-5FG676N

    Abstract: XQ2VP405FF1152N XQ2VP40-5FF1152 XQ2VP40-5FF1152N 5ff11 p624 wireless encrypt BLVDS-25
    Text: 1 R DS136 v1.0 November 29, 2006 QPro Virtex-II Pro 1.5V Military Temp Platform FPGAs Complete Data Sheet Preliminary Product Specification Module 1: Introduction and Overview Module 3: DC and Switching Characteristics DS136-1 (v1.0) November 29, 2006 DS136-3 (v1.0) November 29, 2006


    Original     		DS136 DS136-1 DS136-3 FF1704 DS136-4 XQ2VP40-5FG676N XQ2VP405FF1152N XQ2VP40-5FF1152 XQ2VP40-5FF1152N 5ff11 p624 wireless encrypt BLVDS-25 PDF

    2929 transistor

    Abstract: MMBTA63 MMBTA64 t2929
    Text: SAMSUNG SEMICONDUCTOR D | 7^4,4142 0007300 3 | INC MMBTA64 PNP EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		MMBTA64 T-29-29 MMBTA63 OT-23 100fjA 100mA 100mA, 2929 transistor t2929 PDF

    VCO 9GHZ 10GHZ

    Abstract: RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor
    Text: BFP720ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		BFP720ESD OT343 OT343-PO OT343-FP BFP720ESD: OT323-TP VCO 9GHZ 10GHZ RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor PDF

    BFP640ESD

    Abstract: RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor
    Text: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP BFP640ESD RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP450 Linear Low Noise Silicon Bipolar RF Transistor Datasheet Revision 1.2, 2013-07-29 RF & Protection Devices Edition 2013-07-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		BFP450 OT343 OT343-PO OT343-FP BFP450: OT323-TP PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP720FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		BFP720FESD BFP720FESD: PDF

    gummel poon model parameter HBT

    Abstract: 726-BFP640FESDH6327 Germanium Transistor
    Text: BFP640FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		BFP640FESD BFP640FESD: 726-BFP640FESDH6327 640FESD H6327 gummel poon model parameter HBT Germanium Transistor PDF

    RF TRANSISTOR 10GHZ

    Abstract: BFP740ESD NXP Bluetooth IC C166 JESD22-A114 NF50 vxWORKS Germanium Transistor gummel transistor RF S-parameters
    Text: BFP740ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		BFP740ESD OT343 OT343-PO OT343-FP BFP740ESD: OT323-TP RF TRANSISTOR 10GHZ BFP740ESD NXP Bluetooth IC C166 JESD22-A114 NF50 vxWORKS Germanium Transistor gummel transistor RF S-parameters PDF

    BFP740FESD

    Abstract: gummel poon model parameter HBT C166 JESD22-A114 NF50 2.4ghz lnb Germanium Transistor transistor RF S-parameters infineon RF
    Text: BFP740FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		BFP740FESD BFP740FESD: BFP740FESD gummel poon model parameter HBT C166 JESD22-A114 NF50 2.4ghz lnb Germanium Transistor transistor RF S-parameters infineon RF PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP640FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		BFP640FESD BFP640FESD: PDF

    XPOSYS

    Abstract: gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb
    Text: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP 726-BFP640ESDE6327 640ESD E6327 XPOSYS gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb PDF

    2929 transistor

    Abstract: MMBT6427 MMBTA14 SOT-23 J
    Text: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D | 7^4142 OGt^eT! t | NPN EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage . Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		0075T1 MMBTA14 MMBT6427 T-29-29 OT-23 100jjA, 2929 transistor SOT-23 J PDF