DG2741DQ
Abstract: DG2741DS DG2742 DG2742DQ DG2743 DG2743DQ DG2741 sot23 6pin f4
Text: DG2741/2742/2743 Vishay Siliconix New Product Low-Voltage, 0.8-W rON, Dual SPST Analog Switch FEATURES BENEFITS APPLICATIONS D Low Voltage Operation 1.6 V to 3.6 V D Low On-Resistance - rDS(on): 0.8 W @ 2.7 V D High Current Handling Capacity: 150-mA Continuous
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DG2741/2742/2743
150-mA
OT23-8
DG2741/2742/ed
08-Apr-05
DG2741DQ
DG2741DS
DG2742
DG2742DQ
DG2743
DG2743DQ
DG2741
sot23 6pin f4
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SUM110N08-07L
Abstract: No abstract text available
Text: SUM110N08-07L Vishay Siliconix New Product N-Channel 75-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 110a 0.0095 @ VGS = 4.5 V 102 D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package
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SUM110N08-07L
O-263
SUM110N08-07L--E3
18-Jul-08
SUM110N08-07L
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Si3443DV-T1
Abstract: Si3443DV-T1-E3 Si3443DV
Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.5 0.090 @ VGS = −2.7 V −3.8 0.100 @ VGS = −2.5 V −3.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View
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Si3443DV
Si3443DV-T1--E3
18-Jul-08
Si3443DV-T1
Si3443DV-T1-E3
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SI7958DP-T1-E3
Abstract: Si7958DP 72661
Text: Si7958DP Vishay Siliconix New Product Dual N-Channel 40-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr D Dual MOSFET for Space Savings PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.0165 @ VGS = 10 V 11.3 0.020 @ VGS = 4.5 V
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Si7958DP
Si7958DP-T1--E3
S-32677--Rev.
29-Dec-03
SI7958DP-T1-E3
72661
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SUM110N06-05L
Abstract: sum110
Text: SUM110N06-05L Vishay Siliconix New Product N-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 0.0052 @ VGS = 10 V 60 D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package ID (A) 110 a 0.0072 @ VGS = 4.5 V
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SUM110N06-05L
O-263
SUM110N06-05L--E3
S-32618--Rev.
29-Dec-03
SUM110N06-05L
sum110
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SUD50N04-09
Abstract: SUD50N04
Text: SUD50N04-09 Vishay Siliconix New Product N-Channel 40-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 40 0.009 @ VGS = 10 V ID (A)c D TrenchFETr Power MOSFETS D 175_C Junction Temperature 50 APPLICATIONS D Automotive − ABS − High-Side Switch
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SUD50N04-09
O-252
SUD50N04-09--E3
S-32679--Rev.
29-Dec-03
SUD50N04-09
SUD50N04
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252AA
Abstract: No abstract text available
Text: Package Information Vishay Siliconix TO−252AA DPAK A E c1 b2 L2 E1 D H D1 L L3 Gage Plane Height (0.020) L1 b1 b e e1 Note: Dimension L3 is for reference only. A2 c A1 MILLIMETERS Dim A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 INCHES Min Max Min
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O-252AA
T-03449--Rev.
29-Dec-03
252AA
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Untitled
Abstract: No abstract text available
Text: DG2018, DG2019 Vishay Siliconix Low Voltage, Dual DPDT and Quad SPDT Analog Switches DESCRIPTION FEATURES The DG2018 and DG2019 are low voltage, single supply analog switches. The DG2018 is a dual double-pole/doublethrow DPDT with two control inputs that each controls a
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DG2018,
DG2019
DG2018
DG2019
DG2019:
DG2018â
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: Si4804BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 D Trench FETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D Symmetrical Buck-Boost DC/DC Converter
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Si4804BDY
Si4804BDY--E3
Si4804BDY-T1--E3
08-Apr-05
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SI3443DV-T1
Abstract: No abstract text available
Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.5 0.090 @ VGS = −2.7 V −3.8 0.100 @ VGS = −2.5 V −3.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View
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Si3443DV
Si3443DV-T1--E3
08-Apr-05
SI3443DV-T1
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Untitled
Abstract: No abstract text available
Text: Si4473BDY Vishay Siliconix New Product P-Channel 14-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −14 rDS(on) (W) ID (A) 0.011 @ VGS = −4.5 V −13 0.018 @ VGS = −2.5 V −10 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATION D Battery Switch for Portable Devices
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Si4473BDY
Si4473BDY--E3
Si4473BDY-T1--E3
08-Apr-05
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Si4830ADY
Abstract: S1 DIODE schottky Si4830ADY-T1 Si4830DY
Text: Si4830ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 D D D D LITTLE FOOTr Plus Schottky Si4830DY Pin Compatible PWM Optimized 100% Rg Tested
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Si4830ADY
Si4830DY
Si4830ADY--E3
Si4830ADY-T1--E3
08-Apr-05
S1 DIODE schottky
Si4830ADY-T1
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Si4473BDY
Abstract: No abstract text available
Text: Si4473BDY Vishay Siliconix New Product P-Channel 14-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −14 rDS(on) (W) ID (A) 0.011 @ VGS = −4.5 V −13 0.018 @ VGS = −2.5 V −10 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATION D Battery Switch for Portable Devices
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Si4473BDY
Si4473BDY--E3
Si4473BDY-T1--E3
S-32676--Rev.
29-Dec-03
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SUM110N08-07L
Abstract: No abstract text available
Text: SUM110N08-07L Vishay Siliconix New Product N-Channel 75-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 110a 0.0095 @ VGS = 4.5 V 102 D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package
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SUM110N08-07L
O-263
SUM110N08-07L--E3
S-32618--Rev.
29-Dec-03
SUM110N08-07L
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qfn 16 lead
Abstract: No abstract text available
Text: Package Information Vishay Siliconix QFN−16 LEAD 3 X 3 D2 D D2/2 Terminal Tip 3 - B- D/2 L E/2 E2/2 e E E2 C 3xe 0.25 - A- Exposed Pad 4 4xb 0.10 M C A B 0.25 3 C 3xe TOP VIEW BOTTOM VIEW // 0.10 C 0.08 C A NX 4 A1 SEATING PLANE - C A3 SIDE VIEW NOTES:
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QFN-16
S-32625--Rev.
29-Dec-03
qfn 16 lead
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mosfet 55 nf 06
Abstract: SiP41103 SiP41103DB SiP41103DM-T1
Text: SiP41103 New Product Vishay Siliconix Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion FEATURES APPLICATIONS D D D D D D D D D D D D D D 5-V Gate Drive Undervoltage Lockout Internal Bootstrap Diode Adaptive Shoot-Through Protection Syncronous MOSFET Disable
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SiP41103
S-32672--Rev.
29-Dec-03
mosfet 55 nf 06
SiP41103DB
SiP41103DM-T1
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Untitled
Abstract: No abstract text available
Text: DG2018, DG2019 Vishay Siliconix Low Voltage, Dual DPDT and Quad SPDT Analog Switches DESCRIPTION FEATURES The DG2018 and DG2019 are low voltage, single supply analog switches. The DG2018 is a dual double-pole/doublethrow DPDT with two control inputs that each controls a
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DG2018,
DG2019
DG2018
DG2019
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Si4834BDY
Abstract: Si4834BDY-T1
Text: Si4834BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 FEATURES D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS SCHOTTKY PRODUCT SUMMARY
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Si4834BDY
Si4834BDY--E3
Si4834BDY-T1--E3
S-32621--Rev.
29-Dec-03
Si4834BDY-T1
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32678
Abstract: Si7459DP
Text: Si7459DP New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) - 30 0.0068 @ VGS = - 10 V - 22 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS
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Si7459DP
07-mm
Si7459DP-T1
25uty
S-32678--Rev.
29-Dec-03
32678
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Si4370DY
Abstract: Si4830DY
Text: Si4370DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 0.022 @ VGS = 10 V 7.5 0.028 @ VGS = 4.5 V 6.5
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Si4370DY
Si4830DY
S-32621--Rev.
29-Dec-03
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DG2718
Abstract: DG2718DN HP4192A QFN-16
Text: DG2718 Vishay Siliconix New Product 0.45-W CMOS, 1.65-V to 3.6-V, Dual DPDT Analog Switch FEATURES BENEFITS D Low Voltage Operation 1.65 V to 3.6 V D Low On-Resistance - rON: 0.45 W @ 2.7 V D Fast Switching: tON = 28 ns tOFF = 17 ns D QFN-16 (3x3) Package
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DG2718
QFN-16
DG2718
HP4192A
S-32597--Rev.
29-Dec-03
DG2718DN
HP4192A
QFN-16
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SiP41102
Abstract: SiP41102DM-T1 SiP41102DB
Text: SiP41102 New Product Vishay Siliconix Half-Bridge N-Channel MOSFET Driver for Motor Control FEATURES APPLICATIONS D D D D D D D D D H-Bridge Motor Controls D 3-Phase Motor Controls 5-V Gate Drive Undervoltage Lockout Internal Bootstrap Diode Adaptive Shoot-Through Protection
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SiP41102
S-32672--Rev.
29-Dec-03
SiP41102DM-T1
SiP41102DB
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SiP41104
Abstract: SiP41104DB SiP41104DQ-T1
Text: SiP41104 New Product Vishay Siliconix Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion FEATURES APPLICATIONS D D D D D D D D D D D D 5-V Gate Drive Undervoltage Lockout Internal Bootstrap Diode PWM pin tristate enable feature Switching Frequency up to 1 MHz
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SiP41104
32672--Rev.
29-Dec-03
SiP41104DB
SiP41104DQ-T1
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72710
Abstract: No abstract text available
Text: Package Information Vishay Siliconix SOT−89: 3−LEAD TO−243AA D A D1 E H L B1 B C e e1 MILLIMETERS Dim A B B1 C D D1 E e e1 H L INCHES Min Max Min Max 1.40 1.60 0.055 0.063 0.44 0.56 0.017 0.022 0.36 0.48 0.014 0.019 0.35 0.44 0.013 0.018 4.40 4.60
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OT-89:
O-243AA)
S-32594--Rev.
29-Dec-03
72710
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