Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current
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MX29F016
16M-BIT
90/120ns
64KByte
reM0590
MAR/31/1999
MAY/18/1999
JUN/02/1999
AUG/11/1999
SEP/01/1999
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29F016
Abstract: 29F01690 29f016-90 29F016-12 MX29F016 SA10 SA11 SA12 SA13 SA14
Text: MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current • Command register architecture
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Original
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PDF
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MX29F016
16M-BIT
90/120ns
64KByte
PM0590
OCT/23/2000
JAN/08/2001
JUN/13/2001
29F016
29F01690
29f016-90
29F016-12
MX29F016
SA10
SA11
SA12
SA13
SA14
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PM0590
Abstract: No abstract text available
Text: MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current • Command register architecture
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Original
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PDF
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MX29F016
16M-BIT
90/120ns
64KByte
OCT/23/2000
JAN/08/2001
JUN/13/2001
NOV/21/2002
PM0590
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Untitled
Abstract: No abstract text available
Text: MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current • Command register architecture
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Original
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PDF
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MX29F016
16M-BIT
90/120ns
64KByte
OCT/23/2000
JAN/08/2001
PM0590
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current
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PDF
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MX29F016
16M-BIT
90/120ns
64KByte
PM0590
44-PIN
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ALI m5123
Abstract: M5123 A1 PC104 CPU SC-104 AM29F160 JTAG bios ami CONNECTOR FLM8L112 M5123 cpu sc104
Text: Module Elan486 SC104 FORTH-SYSTEME GmbH Postfach 11 03 l D-79200 Breisach a. Rhein Küferstr. 8 l D-79206 Breisach a. Rhein 07667 908-0lFax ( (C) Copyright 1998: FS FORTH-SYSTEME GmbH Postfach 1103, D-79200 Breisach a. Rh., Deutschland
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Elan486
SC104
D-79200
D-79206
908-0lFax
908-200lsales
M5123
ALI m5123
M5123 A1
PC104 CPU
SC-104
AM29F160
JTAG bios ami CONNECTOR
FLM8L112
cpu sc104
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Untitled
Abstract: No abstract text available
Text: MX29F016 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Single power supply 5V operation for read, erase and program • Fast access time: 90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current • Command register architecture
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Original
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MX29F016
16M-BIT
90/120ns
64KByte
Togg29F016
OCT/23/2000
PM0590
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Untitled
Abstract: No abstract text available
Text: WHITE /MICROELECTRONICS 4x2M x325V FLASH SIMM WPF8M 32XB-90PSC5 PRELIMINARY* FEATURES • A ccess Tim e of 90ns ■ Packaging: • 80-pin S IM M • The m odule is m a nufa cture d w ith sixte e n 2 M x 8 CMOS ■ 100,000 E rase/Program Cycles ■ O rganized as fo u r banks of 2M x32
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x325V
80-pin
32XB-90PSC5
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Untitled
Abstract: No abstract text available
Text: VZÄ WHITE /MICROELECTRONICS 2Mx325V FLASH SIMM W PF2M32X-90XC5 PRELIMINARY* FEATURES • A ccess Tim e of 90ns ■ ■ 100,000 E rase/Program Cycles Packaging: ■ O rganized as 2M x32 • 80 -pin S IM M ■ C om m ercial Tem pe ratu re Range • 80 -pin S IM M , Low P ro file *
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PF2M32X-90XC5
2Mx325V
Am29F016
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29F016
Abstract: No abstract text available
Text: AMENDMENT AMD£I Am29F016 Data Sheet 1996 Flash Products Data Book/Handbook INTRODUCTION This amendment supersedes information regarding the Am 29F016 device in the 1996 Flash Products Data Book/Handbook, PID 11796D. This document includes replacem ent pages for the Am 29F016 data sheet,
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Am29F016
29F016
11796D.
18805C.
44-Pin
16-038-S
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29F016-90
Abstract: No abstract text available
Text: WPF4M32XA-90PSC5 2x2Mx32 5V FLASH SIMM p r e l im in a r y * FEATURES • ■ 100,000 Erase/Program Cycles A cce ss Time of 90ns Packaging: Organized as two banks of 2M x32 • 80-pin SIM M Com m ercial Temperature Range • The module is m anufactured w ith eight 2M x8 CM O S Flash
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WPF4M32XA-90PSC5
2x2Mx32
80-pin
Am29F016
29F016-90
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CS 1602 B
Abstract: 29f016-90
Text: WPF8M32XA-90PSC5 WHITE M IC R O ELECTRO NICS 4x2Mx32 5V FLASH S IM M PR ELIM IN A R Y ' FEATURES • A c c e ss T im e of 90ns ■ 100,000 E ra s e /P ro g ra m Cycles ■ ■ O rg an ized as fo u r banks of 2 M x 3 2 ■ C o m m e rc ia l T e m p e ra tu re Range
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WPF8M32XA-90PSC5
4x2Mx32
80-pin
CS 1602 B
29f016-90
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY- a Advanced Micro Devices A m 29F 016 16-Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ Embedded Program A lgorithm s — Automatically programs and verifies data at
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16-Megabit
48-pin
Am29F016
G25752A
0033DSb
TSR048
16-038-TS48
DA104
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Untitled
Abstract: No abstract text available
Text: WHITE /MICROELECTRONICS 2x2Mx325V FLASH SIMM W PF4M 32XA-90PSC5 PRELIMINARY* FEATURES • A ccess Tim e of 90ns ■ Packaging: • 80-pin S IM M • The m odule is m a nufa cture d w ith eigh t 2 M x8 CMOS Rash ■ 100,000 E rase/Program Cycles ■ O rganized as tw o banks of 2M x32
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2x2Mx325V
80-pin
29F016-90
32XA-90PSC5
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