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    29F016B Search Results

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    29F016B Price and Stock

    AMD AM29F016B-90FC

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    Bristol Electronics AM29F016B-90FC 550
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    AMD AM29F016B-120EC

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    Bristol Electronics AM29F016B-120EC 253
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    ComSIT USA AM29F016B-120EC 65
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    Velocity Electronics AM29F016B-120EC 20
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    AMD AM29F016B-90SC

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    Bristol Electronics AM29F016B-90SC 247
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    AMD AM29F016B-75EC

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    Bristol Electronics AM29F016B-75EC 238
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    AMD AM29F016B-90EC/T

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    Bristol Electronics AM29F016B-90EC/T 128
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    29F016B Datasheets Context Search

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    AM28F080

    Abstract: AMD Series D flash memory card
    Text: PCMCIA Flash Memory Card FLB Series White Electronic Designs 2 MEGABYTE through 40 MEGABYTE AMD based FEATURES ARCHITECTURE OVERVIEW Low cost High Density Linear Flash Card WEDC’s FLB series is designed to support from two to twenty (see Block diagram) 8Mb or 16MB components,


    Original     		PDF 150ns AM28F080 AMD Series D flash memory card

    Am28F016

    Abstract: 29f016b Am28F080 PCMCIA pinout sram pcmcia flash card PCMCIA FLASH CARD 10MB PCMCIA SRAM Card AMD marking CODE flash output data flash card pcmcia AMD Series D flash memory card
    Text: PCMCIA Flash Memory Card FLB Series PCMCIA Flash Memory Card 2 MEGABYTE through 40 MEGABYTE AMD based General Description Features WEDC’s PCMCIA Flash memory cards offer high • Low cost High Density Linear Flash Card density linear Flash solid state storage solutions for


    Original     		PDF 150ns 23-Dec-98 27-May-99 30-May-00 1-Aug-00 Am28F016 29f016b Am28F080 PCMCIA pinout sram pcmcia flash card PCMCIA FLASH CARD 10MB PCMCIA SRAM Card AMD marking CODE flash output data flash card pcmcia AMD Series D flash memory card

    FLASH TRANSLATION LAYER FTL

    Abstract: Am28F016 Am28F080
    Text: PCMCIA Flash Memory Card FLB Series PCMCIA Flash Memory Card 2 MEGABYTE through 40 MEGABYTE AMD based Features General Description • Low cost High Density Linear Flash Card WEDC’s PCMCIA Flash memory cards offer high density linear Flash solid state storage solutions for


    Original     		PDF 150ns 23-Dec-98 28-Jul-99 FLASH TRANSLATION LAYER FTL Am28F016 Am28F080

    Untitled

    Abstract: No abstract text available
    Text: AMD£I 29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C


    OCR Scan     		PDF Am29F016B 20-year 29F016 44-pin

    AM29F016B

    Abstract: No abstract text available
    Text: PR ELIM IN ARY AMDZ1 29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Typical 1,000,000 w rite/erase cycles (minimum 100,000 cycles guaranteed)


    OCR Scan     		PDF Am29F016B 48-pin 40-pin 29F016 44-pin 16-038-S044-2 AM29F016B 29F016B

    29f016b

    Abstract: amd 29f016b
    Text: AMDa 29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirem ents ■ M anufactured on 0.32 \im process technology


    OCR Scan     		PDF Am29F016B 29F016B 29f016b amd 29f016b

    am29f016b-75

    Abstract: 29f016b
    Text: AM D 3 A m 29F 016B 16 Megabit 2 M x 8-Btt CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology


    OCR Scan     		PDF Am29F016 CS39S 20-year Am29F016B am29f016b-75 29f016b

    AM29F016B-S

    Abstract: No abstract text available
    Text: AMD£I 29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V +10% , single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 |jm process technology


    OCR Scan     		PDF Am29F016B Am29F016 Icc41° AM29F016B-S

    tsop 48 PIN SOCKET

    Abstract: TSOP 48 socket
    Text: PCMCIA Flash Memory Card FLB Series PCMCIA Flash Memory Card 2 MEGABYTE through 40 MEGABYTE AMD based Features General Description • Low cost High Density Linear Flash Card EDI’s PCMCIA Flash memory cards offer high density linear Flash solid state storage solutions for


    OCR Scan     		PDF 150ns 29F016B EEPROM-200ns tsop 48 PIN SOCKET TSOP 48 socket

    29f016b

    Abstract: AM29F016B
    Text: P R E L IM IN A R Y AMDB A m 2 9 F 0 1 6 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • — Embedded Program algorithm automatically writes and verifies bytes at specified addresses 5.0 V ± 10%, single power supply operation


    OCR Scan     		PDF 29F016 16-038-TS48 TSR048 DA104 29F016B 040--40-Pin TSR040--40-Pin 16-038-TSOP-1AC TSR040 29f016b AM29F016B

    Untitled

    Abstract: No abstract text available
    Text: AMD£I 29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single pow er supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C


    OCR Scan     		PDF Am29F016B 20-year 29F016 48-pin 40-pin 44-pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AMD£I A m 2 9 F 0 1 6 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35|im process technology


    OCR Scan     		PDF Am29F016 48-pin 40-pin Am29F016B TSR040â

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AMDZ1 29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program/erase cycles per sector guaranteed ■ Package options


    OCR Scan     		PDF Am29F016B 48-pin 40-pin Am29F016 44-pin twHwi-12-