2.54mm Header 3 Pin
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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UL94-V0
12-JUL-10
08-JUL-10
23-NOV-07
07-DEC-06
29-MAR-04
15-MAR-04
03-MAY-99
6130xx
2.54mm Header 3 Pin
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Untitled
Abstract: No abstract text available
Text: SMBJ5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AA SMB J-Bend Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.180 (4.57) 0.160 (4.06) Stand-off Voltage 5.0 to 188V
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188CA
DO-214AA
29-Mar-04
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Untitled
Abstract: No abstract text available
Text: BPW46 VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPW46 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. The large active area combined with a flat case gives
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BPW46
BPW46
D-74025
29-Mar-04
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SUP17N25-165
Abstract: No abstract text available
Text: SUP17N25-165 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 250 0.165 @ VGS = 10 V 17 D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D Automotive such as − Diesel Fuel Injection
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SUP17N25-165
O-220AB
SUP17N25-165--E3
08-Apr-05
SUP17N25-165
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XT57C
Abstract: No abstract text available
Text: XT57C Vishay Dale Quartz Crystals FEATURES • Miniature size • 1.1 mm height • Wide frequency range • Seam sealing • Emboss taping The XT57C is a miniature SMD crystal with 7.0 x 5.0 ceramic package and a height of 1.1 mm max. 9.8304MHz to 100MHz
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XT57C
XT57C
8304MHz
100MHz
100VDC
29-Mar-04
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Si3445ADV
Abstract: Si3445ADV-T1-E3
Text: Si3445ADV New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.8 0.060 @ VGS = −2.5 V −4.9 0.080 @ VGS = −1.8 V −4.2 (4) S TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm
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Si3445ADV
Si3445ADV-T1--E3
S-40582--Rev.
29-Mar-04
Si3445ADV-T1-E3
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40575
Abstract: Si3973DV Si3973DV-T1
Text: Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.087 @ VGS = −4.5 V −2.7 0.120 @ VGS = −2.5 V −2.3 0.165 @ VGS = −1.8 V −1.5 D TrenchFETr Power MOSFET APPLICATIONS
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Si3973DV
Si3973DV-T1--E3
S-40575--Rev.
29-Mar-04
40575
Si3973DV-T1
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Si3433BDV
Abstract: Si3433BDV-T1-E3 Si3433BDV-T1 SI3433B
Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D
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Si3433BDV
Si3433BDV-T1
Si3433BDV-T1--E3
08-Apr-05
Si3433BDV-T1-E3
SI3433B
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 46 FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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UL94-V0
07-APR-09
23-NOV-07
19-JUN-07
12-DEC-06
29-MAR-04
16-MAR-04
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Untitled
Abstract: No abstract text available
Text: BPW96 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near
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BPW96
BPW96
D-74025
29-Mar-04
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7919
Abstract: No abstract text available
Text: CQY36N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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CQY36N
CQY36N
BPW16N
D-74025
29-Mar-04
7919
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BPW34 circuit
Abstract: BPW34 application
Text: BPW34 VISHAY Vishay Semiconductors Silicon PIN Photodiode Description 94 8583 The BPW34 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO-5 devices in many applications.
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BPW34
BPW34
D-74025
29-Mar-04
BPW34 circuit
BPW34 application
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Si7476DP
Abstract: v 250 c 45
Text: Si7476DP New Product Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0053 @ VGS = 10 V 25 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.0066 @ VGS = 4.5 V
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Si7476DP
07-mm
Si7476DP-T1--E3
S-40577--Rev.
29-Mar-04
v 250 c 45
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Si3443BDV
Abstract: No abstract text available
Text: Si3443BDV New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.060 @ VGS = −4.5 V −4.7 0.090 @ VGS = −2.7 V −3.8 0.100 @ VGS = −2.5 V −3.7 D TrenchFETr Power MOSFET D 100% Rg Tested
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Si3443BDV
Si3443BDV-T1--E3
S-40575--Rev.
29-Mar-04
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS PCB LAYOUT - COMPONENT VIEW A MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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UL94-V0
12-JUL-10
08-JU
08-JUL-10
23-NOV-07
07-DEC-06
29-MAR-04
15-MAR-04
08-APR-13
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XT36C
Abstract: marking 10.000
Text: XT36C Vishay Dale Surface Mount Crystal FEATURES • Miniature size • Wide frequency range • Glass sealing • Emboss taping This XT36C part is a miniature SMD crystal with 8.0 x 4.5 ceramic package and a height of 1.6 mm max . It is widely applied in notebook computer, PCMCIA and communication
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XT36C
XT36C
100VDC
29-Mar-04
marking 10.000
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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UL94-V0
E323964
23-SEP-13
07-SEP-11
25-NOV-09
23-NOV-07
11-DEC-06
29-MAR-04
05-FEB-99
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CAT5241
Abstract: linear potentiometer sda 5241 CAT5241WI-00-T1 CAT5241WI-10-T1 CAT5241WI-25-T1 CAT5241WI-50-T1 CAT5241YI-25-T2 MS-013
Text: CAT5241 Quad Digitally Programmable Potentiometer DPP with 64 Taps and I²C Interface FEATURES DESCRIPTION Four linear-taper digitally programmable potentiometers 64 resistor taps per potentiometer End to end resistance 2.5 kΩ, 10 kΩ, 50 kΩ or
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CAT5241
20-lead
CAT5241
MD-2011
linear potentiometer
sda 5241
CAT5241WI-00-T1
CAT5241WI-10-T1
CAT5241WI-25-T1
CAT5241WI-50-T1
CAT5241YI-25-T2
MS-013
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74HC132
Abstract: CAT5113 LM6064 LT1097 MS-001 RB555
Text: CAT5113 100-Tap Digitally Programmable Potentiometer DPP FEATURES DESCRIPTION 100-position linear taper potentiometer The CAT5113 is a single digitally programmable potentiometer (DPP™) designed as a electronic replacement for mechanical potentiometers. Ideal for
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CAT5113
100-Tap
100-position
CAT5113
MD-2009
74HC132
LM6064
LT1097
MS-001
RB555
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4425b
Abstract: V30114-T1 vishay siliconix code marking to-220 marking code 20L sot-23 sot23 to252 footprint wave soldering siliconix an808
Text: Si4421DY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.00875 @ VGS = - 4.5 V - 14 0.01075 @ VGS = - 2.5 V - 12 0.0135 @ VGS = - 1.8 V - 11 D TrenchFETr Power MOSFET APPLICATIONS D Game Station
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Si4421DY
12-Dec-03
AN826
20-Jun-03
4425b
V30114-T1
vishay siliconix code marking to-220
marking code 20L sot-23 sot23
to252 footprint wave soldering
siliconix an808
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V30114
Abstract: T0445 Si9730
Text: Si9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control IC FEATURES D D D D D D Over-Charge Protection Over-Discharge Protection Short Circuit Current Limiting Battery Open-Circuit Center Tap Protection Cell Voltage Balancing Undervoltage Lockout D D
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Si9730
Si9730
X1011
P9010
11-Feb-05
V30114
T0445
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Untitled
Abstract: No abstract text available
Text: CAT28C65B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.
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CAT28C65B
64K-Bit
90/120/150ns
CAT28C65B
MD-1009,
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 50 LTR B DESCRIPTION DATE REV PER 0G 3H — 0 0 8 5 — 0 4 DWN 29MAR04 APVD JR MS D D B B ACTIVE 1503-03
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29MAR04
31MAR2000
18APR01
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - DIST LOC G ALL RIGHTS RESERVED. R E V IS IO N S 14 LTR DATE DWN APVD 29MAR04 JR CK DESCRIPTION REV PER 0G 3A—0 2 2 8 —0 4 D D Æ ^CRÆ IL^ WIRE RANGE
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29MAR04
LR7189
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