2N117 Search Results

2N117 Price and Stock

Filter by Manufacturer


Hammond Manufacturing 1182N117 PWR XFMR TOROIDAL 500VA CHAS MT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1182N117	Box	6		1	1 $121.49 10 $112.209 100 $108.2036 1000 $108.2036 10000 $108.2036	Buy Now
Mouser Electronics	1182N117		3			1 $121.49 10 $112.2 100 $108.2 1000 $108.2 10000 $108.2	Buy Now
Newark	1182N117	Bulk	45		1	1 $133.33 10 $128.9 100 $111.11 1000 $111.11 10000 $111.11	Buy Now
RS	1182N117	Bulk			1	1 $122.7 10 $122.7 100 $122.7 1000 $122.7 10000 $122.7	Get Quote
Powell Electronics	1182N117		13		1	1 $130.2 10 $120.9 100 $111.36 1000 $111.36 10000 $111.36	Buy Now

Master Electronics	1182N117		1			1 $133.91 10 $119.09 100 $108.11 1000 $108.11 10000 $108.11	Buy Now
Hammond Manufacturing 182N117 PWR XFMR TOROIDAL 500VA CHAS MT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	182N117	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
JRH Electronics 1182N117 PWR XFMR TOROIDAL 500VA CHAS MT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1182N117	Box			1	1 $236.73 10 $236.73 100 $202.4725 1000 $202.4725 10000 $202.4725	Buy Now
SICK AG WTB2S-2N1175 Photoelectric Sensor, 90Mm, Npn, 10-30V Rohs Compliant: Yes \|Sick WTB2S-2N1175
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	WTB2S-2N1175	Bulk			1	1 $337.18 10 $303.46 100 $303.46 1000 $303.46 10000 $303.46	Buy Now
SICK AG WTB2S-2N1175 (ALTERNATE: 1064621) Proximity Sensor, Photoelectric, Rectangular,10 mm-70 mm, Red Light,640 nm, NPN \| SICK WTB2S-2N1175
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	WTB2S-2N1175 (ALTERNATE: 1064621)	Bulk			1	1 $282.32 10 $259.73 100 $259.73 1000 $259.73 10000 $259.73	Get Quote

Find more 2N117 price and stock on Findchips.com

2N117 Datasheets (133)

Part	Manufacturer	Description	Datasheet Type	PDF
2N117	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N117	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N117	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N117	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N117	Unknown	GE Transistor Specifications	Scan	PDF
2N117	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N117	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N117	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N117	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N117	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N117	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N1170	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N1170	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N1170	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF

2N1170	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N1170	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N1170	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N1170	RCA	RCA Transistor and Diode Data	Scan	PDF
2N1171	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N1171	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

...

2N117 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2N1176A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)300m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)100õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.	Original	PDF	2N1176A
Untitled Abstract: No abstract text available Text: 2N1176B Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)300m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)100õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.	Original	PDF	2N1176B
Untitled Abstract: No abstract text available Text: 2N1175 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25ã V(BR)CBO (V)35 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.70 h(FE) Max. Current gain.140	Original	PDF	2N1175
Low-Power Germanium PNP Abstract: 2N218 ASZ20 2N295 Diode 13M 2N2374 2n274 CK66A 2N466 TO9 package Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 15 20 25 30 2N422 2Nl09 2N217 2N274 2N633 2N1415 2N1866 2N1998 2N598 GT125SZ GT125V 2N602A 2N1175 2N1175A 2N1309A 2S8461 2Nl174 CK668 CK66C 2N466 eK66 CK66A GT125G 2N600 2N2374 PTC145 CK678 CK67C 2N467 CK67	Original	PDF	2N422 2Nl09 2N217 2N274 2N633 2N1415 2N1866 2N1998 2N598 GT125SZ Low-Power Germanium PNP 2N218 ASZ20 2N295 Diode 13M 2N2374 CK66A 2N466 TO9 package
Untitled Abstract: No abstract text available Text: 2N117 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME \| CATALOG \| CART \|EXPRESS CHECKOUT \| PARTS WATCH \| NEW ITEMS \|RFQ\| Home 2N117 Availability Online Store Diodes	Original	PDF	2N117 2N117 O-22var STV3208
nkt270 Abstract: Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801 Text: LOW-POWER GERMANIUM PNP Item Number . Part Number V BR CBO 5 10 2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 2G396 ~~~~~ 15 20 -25 30 -35 40 2G303 2G303 2G303 2N801 2N802 2N426 2N1171 2N1017 NKT224 2G382 2G382 NKT221 NKT228 NKT303 2N623 TI385	Original	PDF	2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 nkt270 Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801
2N1174 Abstract: No abstract text available Text: 2N1174 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)35 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.50 h(FE) Max. Current gain.200	Original	PDF	2N1174
Untitled Abstract: No abstract text available Text: 2N1176 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10ã V(BR)CBO (V)10 I(C) Max. (A)300m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.	Original	PDF	2N1176
2N117 Abstract: 2N118 2N119 Text: I MI L- S-19500/2B AMENOMENT 1 23 February 1981 ● MILITARY SEMICONDUCTOR OEVICE, TYPES SPECIFICATION TRANSISTOR, 2N118, 2N117, NPN, ANO SILICON, LOW POMER 2N119 This amendment forms a part of Military Specification MI L-s-19500/z B, dated 14 June 1968, and is approved for use by all Departments	Original	PDF	S-19500/2B 2N118, 2N117, 2N119 L-s-19500/z -078B-1) 2N117 2N118 2N119
2N117 Abstract: 2N118 2N119 2N11R Cmd 2026 B-IA8 Transistor hall 2S50 9w9w knb 1532 Text: MIL-S-19500/2B U June 196S SUpEWEDfNG MfL-S-19500/2A 28 May 1963 MfL-S-19500/35B NAVY 3 January 1966 (See 6.2. ) MILITARY SEMICONDUCTOR SPECIF’fCATfON DE VfCE, TRANSISTOR, TYPES 2N117. 2N118, NPN, .WLICON, AND 2N119 LOW-POWER This specification ie ma.~tory	Original	PDF	MIL-S-19500/2B MfL-S-19500/2A MfL-S-19500/35B 2N117. 2N118, 2N119 2NI17 2N117 2N118 2N119 2N11R Cmd 2026 B-IA8 Transistor hall 2S50 9w9w knb 1532
Untitled Abstract: No abstract text available Text: 2N1173 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)35 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.50 h(FE) Max. Current gain.200	Original	PDF	2N1173
2N1171 Abstract: No abstract text available Text: 2N1171 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)30 I(C) Max. (A)400m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.30 h(FE) Max. Current gain.	Original	PDF	2N1171 Freq10
Untitled Abstract: No abstract text available Text: 2N1170 Transistors Bidirectional Transistor No. of Units Per Package V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)400m Absolute Max. Power Diss. (W)120m I(CBO) Max. (A)8.0u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.20 h(FE) Max. Current gain. @I(C) (A) (Test Condition)200m	Original	PDF	2N1170
Untitled Abstract: No abstract text available Text: 2N1175A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25ã V(BR)CBO (V)35 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)12uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.	Original	PDF	2N1175A

2N1174 Abstract: 2N1179 2N1113 transistor marking WY ske 250A Text: ● MIL-s-19500/215 NAVV 9 November 1961 ~fTARY TRANSISTOR, 1. SPECIFICATION ‘IYPES 2N1179 ANo SCOPE 1.1 ~ - Tht8 specification covers PNP type 2N1 174 transistors, tie general 19500, unie.m otherwise specified herein. the detail requirements for germankm,	Original	PDF	MIL-s-19500/215 2N1179 IMDL12 2NI174; MIL-fl-19520/ll 5001he 2N1174. 2N1174 2N1113 transistor marking WY ske 250A
uPD70F3548 Abstract: uPD70F3554 uPD70F3558 uPD70F3550 uPD70F4002 v850e2 Fx4 uPD70F3551 uPD70F35 uPD70f4010 V850E2 FK4 Text: User Manual 32 Preliminary Document V850E2/Fx4 32-bit Microcontroller V850E2/FG4 V850E2/FJ4 V850E2/FK4 V850E2/FL4 µPD70F3548 µPD70F3549 µPD70F3550 µPD70F3551 µPD70F3552 µPD70F3553 µPD70F3554 µPD70F3555 µPD70F3556 µPD70F3557 µPD70F3558 µPD70F3559	Original	PDF	V850E2/Fx4 32-bit V850E2/FG4 PD70F3548 PD70F3549 PD70F3550 V850E2/FJ4 PD70F3551 PD70F3552 PD70F3553 uPD70F3548 uPD70F3554 uPD70F3558 uPD70F3550 uPD70F4002 v850e2 Fx4 uPD70F3551 uPD70F35 uPD70f4010 V850E2 FK4
2N117 Abstract: 2n117 texas Text: TYPE 2N117 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N N O . O L -S 5 8 8 9 6 , M A R C H 19S8 9 to 20 beta spread Specifically designed for high gain at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.	OCR Scan	PDF	2N117 2n117 texas
2N117 Abstract: 2n117 texas ScansUX7 Text: TYPE 2N117 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN N O . DL-S B 8 8 9 6 , M A R C H 1 9 6 8 9 to 2 0 beta spread Spedficaly designed for high gaia at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.	OCR Scan	PDF	2N117 2n117 texas ScansUX7
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
2N19A Abstract: 2N1310 2n1408 2N1305 2N1100 2N404 transistor 2N1008 npn germanium 2N1378 2N1924 Text: T - Z 7 - O I discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ' T t i n t h i a i : Polarity v 2843A Maximum Power <W Maximum V) VCB VCE Typical G lin HFE Frequency Reip. (MHz) Gau P o h iity Î v t V f * 5" ^	OCR Scan	PDF	2K43A 2N44A 2Nto37 2N18M 2N109? 2N169 2N3427 2N662 2N1008 2N1008B 2N19A 2N1310 2n1408 2N1305 2N1100 2N404 transistor npn germanium 2N1378 2N1924
2N404 Abstract: 2N508 2N414 same 2N1305 2N1415 2N525 2N527 GE 2N526 2N396 2N1924 Text: 281 282 GERMANIUM SIGNAL TRANSISTORS B V ce r fh lb Package Outline No. Specification Sheet Ho. See 2N525. 281 20.10 See 2N524. 281 20.10 See 2N508, 2 N 1 17 5 and 2 N 1 41 3 series. 281 80.15 Pr Max. mW @ 1V, 20mA (iiA) (V) 2N43A’ 34-65 1.3 30 16 45 240	OCR Scan	PDF	2N43A' 2N525. 2N44A 2N524. 2N188A 34-6S 2N508, 2N1175 2N1413 2N241A 2N404 2N508 2N414 same 2N1305 2N1415 2N525 2N527 GE 2N526 2N396 2N1924
2N1378 Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001 Text: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145	OCR Scan	PDF	2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N1378 2N1924 2N2374 2N1373 2N1274 2N1305 2N2001
2N1377 Abstract: 2N1414 2N1373 2n1614 Germanium power 2N1925 2N508 2N526 2N1309 Text: GERMANIUM PNPSMALL SIGNAL TRANSISTORS 1im hFC Min Max ycBo V Max YFWO V Max Vc, V Max 2N465 2N 466 45 35 12 12 30 20 20 20 15 15 27-45 56-90 1 1 2N467 2N508 2N 508A 2N 522 2N 524 35 20 30 15 30 12 10 10 10 15 15 18 25 8 30 20 20 25 15 30 15 6 7 2 10 112-180	OCR Scan	PDF	NS257 2N1377 2N1414 2N1373 2n1614 Germanium power 2N1925 2N508 2N526 2N1309
1N5438 Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi	OCR Scan	PDF	27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

Privacy Settings

2N117 Search Results

2N117 Price and Stock

Hammond Manufacturing 1182N117

Hammond Manufacturing 182N117

JRH Electronics 1182N117

SICK AG WTB2S-2N1175

SICK AG WTB2S-2N1175 (ALTERNATE: 1064621)

2N117 Datasheets (133)

2N117 Datasheets Context Search

Untitled

Untitled

Untitled

Low-Power Germanium PNP

Untitled

nkt270

2N1174

Untitled

2N117

2N117

Untitled

2N1171

Untitled

Untitled

2N1174

uPD70F3548

2N117

2N117

IC HXJ 2038

2N19A

2N404

2N1378

2N1377

1N5438