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    2N3960 Price and Stock

    Microchip Technology Inc 2N3960

    TRANS NPN 12V TO18
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    Microchip Technology Inc JANTX2N3960

    TRANS NPN 12V TO18
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    Microchip Technology Inc 2N3960UB-TR

    SMALL-SIGNAL BJT
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    Semicoa Semiconductors JANTX2N3960UB

    Switching High Frequency - Waffle Pack (Alt: JANTX2N3960UB)
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    Microchip Technology Inc 2N3960UB/TR

    Transistor BJT NPN 12V 4-Pin UB T/R - Tape and Reel (Alt: 2N3960UB/TR)
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    Onlinecomponents.com 2N3960UB/TR
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    2N3960 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3960 Semico Chip: geometry 0003 polarity NPN Original PDF
    2N3960 Semico NPN transistor Original PDF
    2N3960 Central Semiconductor Silicon Transistor Scan PDF
    2N3960 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3960 Motorola The European Selection Data Book 1976 Scan PDF
    2N3960 Motorola European Master Selection Guide 1986 Scan PDF
    2N3960 Motorola Power Transistor Selection Guide Scan PDF
    2N3960 Motorola High Frequency NPN Transistors Scan PDF
    2N3960 Motorola 20V Vcbo Low Frequency Silicon Power Transistor Scan PDF
    2N3960 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3960 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3960 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3960 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3960 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3960 Unknown Vintage Transistor Datasheets Scan PDF
    2N3960 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3960 Raytheon Selection Guide 1977 Scan PDF
    2N3960J Semico Package = TO-18 Level = Jantxv Vceo (V) = 12 Vcbo (V) = 20 Vebo (V) = 4.5 Ic (A) = 0.05 Power (W) ta = 0.4 Rtja (C/W) = Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 Original PDF
    2N3960JV Semico Package = TO-18 Level = Jantxv Vceo (V) = 12 Vcbo (V) = 20 Vebo (V) = 4.5 Ic (A) = 0.05 Power (W) ta = 0.4 Rtja (C/W) = Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 Original PDF
    2N3960JX Semico Package = TO-18 Level = Jantxv Vceo (V) = 12 Vcbo (V) = 20 Vebo (V) = 4.5 Ic (A) = 0.05 Power (W) ta = 0.4 Rtja (C/W) = Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 Original PDF

    2N3960 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3960UB Qualified Levels: JAN, JANTX, AND JANTXV NPN Silicon Switching Transistor Compliant Qualified per MIL-PRF-19500/399 DESCRIPTION This 2N3960UB epitaxial planar transistor is military qualified up to the JANTXV level for highreliability applications. It features a low profile ceramic UB package. This device is also


    Original     		2N3960UB MIL-PRF-19500/399 2N3960UB 2N3960 MIL-PRF-19500/366. T4-LDS-0161-1, PDF

    2N3960

    Abstract: CF5076
    Text: Data Sheet No. 2N3960 Type 2N3960 Geometry 0003 Polarity NPN Qual Level: JAN - JANTXV Generic Part Number: 2N3960 REF: MIL-PRF-19500/399 Features: • General-purpose low-power NPN silicon transistor. • Housed in TO-18 case. • Also available in chip form using


    Original     		2N3960 MIL-PRF-19500/399 MIL-PRF-19500/399 2N3960 CF5076 PDF

    2C3960

    Abstract: 2N3960 2N3960UB SD3960F SQ3960 SQ3960F chip type geometry
    Text: Data Sheet No. 2C3960 Generic Packaged Part: Chip Type 2C3960 Geometry 0003 Polarity NPN 2N3960 Chip type 2C3960 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N3960, 2N3960UB, SD3960F, SQ3960, SQ3960F Product Summary:


    Original     		2C3960 2N3960 2C3960 2N3960, 2N3960UB, SD3960F, SQ3960, SQ3960F 2N3960 2N3960UB SD3960F SQ3960 SQ3960F chip type geometry PDF

    2N3960

    Abstract: npn transistor data chip die npn transistor
    Text: 2N3960 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power switching transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3960J


    Original     		2N3960 MIL-PRF-19500 2N3960J) 2N3960JX) 2N3960JV) MIL-STD-750 MIL-PRF-19500/399 10Volts, 2N3960 npn transistor data chip die npn transistor PDF

    npn transistor data

    Abstract: 2N396
    Text: 2N3960 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power switching transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3960J


    Original     		2N3960 MIL-PRF-19500 2N3960J) 2N3960JX) 2N3960JV) MIL-STD-750 MIL-PRF-19500/399 10Volts, npn transistor data 2N396 PDF

    2N3960UB

    Abstract: 2N3960UBJ 2N3960UBJX TRANSISTOR DATA MIL-STD-750 2072 2N3960UBJV
    Text: 2N3960UB Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power switching transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3960UBJ


    Original     		2N3960UB MIL-PRF-19500 2N3960UBJ) 2N3960UBJX) 2N3960UBJV) MIL-STD-750 MIL-PRF-19500/399 2N3960UB 2N3960UBJ 2N3960UBJX TRANSISTOR DATA MIL-STD-750 2072 2N3960UBJV PDF

    NPN 300 VOLTS vce POWER TRANSISTOR

    Abstract: 2N3960 2N3960J 2N3960JV 2N3960JX NPN 200 VOLTS POWER TRANSISTOR transistor testing TRANSISTOR DATA 2N3960 JANTX JANTX 2N3960
    Text: 2N3960 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power switching transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3960J


    Original     		2N3960 MIL-PRF-19500 2N3960J) 2N3960JX) 2N3960JV) MIL-STD-750 MIL-PRF-19500/399 NPN 300 VOLTS vce POWER TRANSISTOR 2N3960 2N3960J 2N3960JV 2N3960JX NPN 200 VOLTS POWER TRANSISTOR transistor testing TRANSISTOR DATA 2N3960 JANTX JANTX 2N3960 PDF

    23/1N647-1 JANTXV

    Abstract: No abstract text available
    Text: 2N3960 Qualified Levels: JAN, JANTX, and JANTXV NPN Silicon Switching Transistor Compliant Qualified per MIL-PRF-19500/399 DESCRIPTION This 2N3960 epitaxial planar transistor is military qualified up to the JANTXV level for highreliability applications. It features a thru-hole TO-18 package. This device is also available in


    Original     		2N3960 MIL-PRF-19500/399 2N3960 MIL-PRF-19500/366. O-206AA) T4-LDS-0161, 23/1N647-1 JANTXV PDF

    2N3960

    Abstract: 2N3960 JANTX 2N3960UB
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/399 DEVICES LEVELS 2N3960 2N3960UB JAN JANTX JANTXV


    Original     		MIL-PRF-19500/399 2N3960 2N3960UB 2N3960UB, T4-LDS-0161 2N3960 2N3960 JANTX 2N3960UB PDF

    clc014aje

    Abstract: LMV8244 Video sync splitter lm DS34C86 LMH0074SQ DS8921 HV servo thermopile array 2N3960 DP838640 DS8921 equivalent
    Text: Analog Design Guide for Xilinx FPGAs www.national.com/xilinx 2008 Vol. 1 Analog Solutions for FPGAs .2 Design Tools .3 PowerWise Solutions . 4-5 Data Conversion . 6-12 Amplifiers. 13-23


    Original     		PDF

    MSC8126

    Abstract: 2N3960 1N5819 MIC2505-2BM MSC8122
    Text: Freescale Semiconductor Application Note AN2937 Rev. 2, 12/2007 MSC8122 and MSC8126 Power Circuit Design Recommendations and Examples by Moty Groissman and Boaz Kfir This application note discusses recommendations for designing power circuits to support correct power-up and


    Original     		AN2937 MSC8122 MSC8126 MSC8126 MSC8102 2N3960 1N5819 MIC2505-2BM PDF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes PDF

    2N3960

    Abstract: 2N3960UB
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 20 May 2002. INCH-POUND MIL-PRF-19500/399D 20 February 2002 SUPERSEDING MIL-PRF-19500/399C 29 May 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING


    Original     		MIL-PRF-19500/399D MIL-PRF-19500/399C 2N3960 2N3960UB MIL-PRF-19500. 2N3960UB PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr o% #f 1 I Ic ^88888 l Data S heet No. 2N 3960 $ id L S E M IC O N D U C T O R S G eneric Part Num ber: 2N3960 Type 2N3960 G eom etry 0003 Polarity NPN Qual Level: JAN - JA NTXV


    OCR Scan     		2N3960 MiL-PRF-19500/399 PDF

    2N3960

    Abstract: motorola 3960 2n3959
    Text: MOTOROLA SEMICONDUCTOR 2N3959 2N3960 TECHNICAL DATA The RF Line 1.8 GHz - 10 mAdc HIGH FREQUENCY TRANSISTO RS NPN SILICON NPN SILICON HIG H-FREQUENCY TRANSISTORS . . designed fo r high speed c u rre n t m ode logic s w itc h in g app lic a tio n s . H ig h C u rre n t-G a in —B a n d w id th P ro d u c t f j = 180 0 M H z T y p @ I q ^ 10 m A d c


    OCR Scan     		2N3959 2N3960 2N3960 motorola 3960 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    MRF965

    Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan     		17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 MRF965 2N5109 motorola motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866 PDF

    2N5109 motorola

    Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­


    OCR Scan     		17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 2N5109 motorola MRF536 BFR90 application MRF931 MRF586 244A-01 MRF961 mrf517 2N5943 PDF

    2N5109 motorola

    Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan     		17A-01 05A-01 MRF587 44A-01 2N3959 2N3960 2N5835 MM4049* MRF914 2N5943 2N5109 motorola BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 PDF

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239 PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    bcy59 equivalent

    Abstract: BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22
    Text: Discrete Devices Transistors Cont. Choppers Maximum Ratings Polarity PD Ambient h f e @>c VCE V e B Volts Volts Min/Max mA II Type Electrical Characteristics @ 25° C V c E (S a t) @ Ic/lß mA/mA — Vq @Ib mV rd@l B Cob Package pF mA Ohms mA - 14 Max 2N943


    OCR Scan     		2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A 52N329A bcy59 equivalent BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22 PDF