2SA115 Search Results

2SA115 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SA1154		Renesas Electronics Corporation	Bipolar Small Signal Transistors, , /
2SA1156-AZ		Renesas Electronics Corporation	Bipolar Power Transistors, , /

2SA115 Price and Stock

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3M Interconnect 1U30A-MB2-SA1-150 USB3 VISION INDUSTRIAL CAMERA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1U30A-MB2-SA1-150	Bulk	55		1	1 $40.72 10 $33.197 100 $27.25 1000 $27.25 10000 $27.25	Buy Now
Avnet Americas	1U30A-MB2-SA1-150	Bulk		19 Weeks, 1 Days	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	1U30A-MB2-SA1-150					1 - 10 - 100 $27.25 1000 $27.25 10000 $27.25	Get Quote
3M Interconnect 1U30S-MB2-SA1-150 USB3 CABLE ASSEMBLY 1.5 METER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1U30S-MB2-SA1-150	Box	35		1	1 $56.19 10 $45.804 100 $38.7485 1000 $38.7485 10000 $38.7485	Buy Now
Mouser Electronics	1U30S-MB2-SA1-150		46			1 $53.22 10 $48.84 100 $42.89 1000 $42.89 10000 $42.89	Buy Now
Interstate Connecting Components	1U30S-MB2-SA1-150		6			1 $61.9976 10 $49.9981 100 $49.2044 1000 $49.2044 10000 $49.2044	Buy Now
3M Interconnect 1U30A-MB2-SA1-150-CE USB3 VISON INDUSTRIAL CAMERA CAB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1U30A-MB2-SA1-150-CE	Bulk	20		1	1 $40.72 10 $33.197 100 $27.25 1000 $27.25 10000 $27.25	Buy Now
Avnet Americas	1U30A-MB2-SA1-150-CE	Bulk		25 Weeks, 1 Days	25	1 - 10 - 100 $29.648 1000 $27.904 10000 $27.904	Buy Now
Mouser Electronics	1U30A-MB2-SA1-150-CE					1 - 10 - 100 $46.1 1000 $46.1 10000 $46.1	Get Quote
Rochester Electronics LLC 2SA1152-A SMALL SIGNAL BIPOLAR TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA1152-A	Bulk			854	1 - 10 - 100 - 1000 $0.35 10000 $0.35	Buy Now
ITT Interconnect Solutions CA3106KE20-22S-A115 CA3106KE20-22S-A115 - Bulk (Alt: CA3106KE20-22S-A11)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CA3106KE20-22S-A115	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2SA115 Datasheets (103)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA115	Various Russian Datasheets	Transistor	Original	PDF
2SA115	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SA115	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SA115	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SA115	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA115	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SA115	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA115	Unknown	Cross Reference Datasheet	Scan	PDF
2SA1150	Toshiba	TRANS GP BJT PNP 30V 0.8A 3(2-4E1A)	Original	PDF
2SA1150	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SA1150	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SA1150	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SA1150	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA1150	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF

2SA1150	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1150	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SA1150	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SA1150	Unknown	Cross Reference Datasheet	Scan	PDF
2SA1150	Toshiba	SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR	Scan	PDF
2SA1150	Toshiba	TRANSISTOR (LOW FREQUENCY AMPLIFIER APPLICATIONS)	Scan	PDF

2SA115 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SC2710 Abstract: 2SA1150 Text: 2SC2710 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC2710 ○ 低周波増幅用単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • 2SA1150 とコンプリメンタリになります。絶対最大定格 (Ta = 25°C)	Original	PDF	2SC2710 2SA1150 2SC2710 2SA1150
2SA1150 Abstract: 2SC2710 Text: 2SA1150 シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA1150 ○ 低周波増幅用単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC2710 とコンプリメンタリになります。絶対最大定格 (Ta = 25°C)	Original	PDF	2SA1150 2SC2710 2SA1150 2SC2710
2SA1150 Abstract: 2SC2710 Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage	Original	PDF	2SA1150 2SC2710. 2SA1150 2SC2710
Untitled Abstract: No abstract text available Text: 2SA1156 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)400 I(C) Max. (A)500m Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SA1156
Untitled Abstract: No abstract text available Text: 2SA1150Y Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SA1150Y Freq120M
2SA115 Abstract: No abstract text available Text: 2SA115 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)34 I(C) Max. (A) Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.	Original	PDF	2SA115 Freq30M
2SC2710 Abstract: 2SA1150 Text: 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating	Original	PDF	2SC2710 2SA1150 2SC2710 2SA1150
LM8550 Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960 Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo	Original	PDF	2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Untitled Abstract: No abstract text available Text: 2SA1150O Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SA1150O Freq120M
2SA1150 Abstract: 2SA115 2SC2710 Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 · Complementary to 2SC2710. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage	Original	PDF	2SA1150 2SC2710. 2SA1150 2SA115 2SC2710
2SA1150 Abstract: No abstract text available Text: 2SA1150 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SA1150 Freq120M
Untitled Abstract: No abstract text available Text: 2SA1151 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SA1151 Freq180M
Untitled Abstract: No abstract text available Text: 2SA1154 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)700m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SA1154 Freq120M
2sA1152 Abstract: No abstract text available Text: 2SA1152 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)300m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SA1152 Freq100M

2SA1150 Abstract: 2SC2710 Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage	Original	PDF	2SA1150 2SC2710. 2SA1150 2SC2710
25C2710 Abstract: 2SA1150 2SC2710 Text: TOSHIBA 2SC2710 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm FOR AUDIO AMPLIFIER APPLICATIONS • • High DC Current Gain : hjpg (1) = 100~320 Complementary to 2SA1150 4.2M A X . M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	PDF	2SC2710 2SA1150 25C2710 2SA1150 2SC2710
N1H1 Abstract: No abstract text available Text: 2SA1150 TOSHIBA TOSHIBA TRANSISTOR 2 SILICON PNP EPITAXIAL TYPE PCT PROCESS S A 1 1 5 Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS 4.2 MAX. • High IrpE : ^FE = 100~320 • Complementary to 2SC2710. 0.55MAX. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC	OCR Scan	PDF	2SA1150 2SC2710. 55MAX. N1H1
Untitled Abstract: No abstract text available Text: TOSHIBA TO-92 1. TO-92 PACKAGE SERIES fsSTM ito \|CJ i CD {DISCRETE/0PT0> 'N TO o > TRANSISTOR < Application NPN General Purpose 2SC1815 ! PNP i i 2SA1015 General Purpose 2SC2888 ! 2SA1158 V c e Sat MAX. hFE Type No. v CEO (V) •c PC (mA) (mW) 50 150 400	OCR Scan	PDF	2SC1815 2SC2888 2SA1158 2SA1015 2SC1923 2SC380TM 2SC941TM 50vMAX
2SB1545 Abstract: 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709 Text: - 40 - S s T y p e No. tt S Manuf. 2SA 1750 H 2SA 1751 H # 2SA 1752 H $ 2SA 1753 H if 2SA. 1755 ^ B ÍL 2SA 1757 . * h SANYO * S T O S HIBA # S NEC ï 3 HITACHI I ± I FUJITSU fâ T MATSUSHITA 2SA1156 2SA1110 2SA1383 2SA15 3 5 A m = MITSUBISHI 2SA1121 2SB970	OCR Scan	PDF	2SA1156 2SA1110 2SA1383 2SA1535A 2SA1535 2SA1182 2SA1464 2SA1121 2SB970 2SB1545 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709
2SA1156 Abstract: 2SA115 2SA 1156 2SC2752 cidc Text: PNP SILICON POWER TRANSISTOR 2S A 1156 DESCRIPTION The 2SA1156 is suitable for Low Power Switching regulator, PACKAGE DIMENSIONS DC-DC converter and High Voltage Switch. FEATURES in millimeters inches 8.5 MAX. (0.334 MAX.) • High Breakdown Voltage. • Low Collector Saturation Voltage.	OCR Scan	PDF	2SA1156 2SA1156 2SC2752 m-200 2SA115 2SA 1156 cidc
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2710 FOR AUDIO AM PLIFIER APPLICATIONS • High DC Current Gain : • Complementary to 2SA1150 U nit in mm 4.2M AX. hpE (i) = 100~320 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC	OCR Scan	PDF	2SC2710 2SA1150
A1150 transistor Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type A1150 2SA1150 transistor a1150 2SC2710 sA1150 Text: 2SA1150 TOSHIBA 2 S A 1 150 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LO W FREQUENCY AM PLIFIER APPLICATIONS 4.2M AX. • • High hpE : hRE —100~320 Complementary to 2SC2710. 0.55MAX. M A X IM U M RATINGS (Ta = 25°C) SYMBOL	OCR Scan	PDF	2SA1150 2SC2710. 55MAX. A1150 transistor TOSHIBA Transistor Silicon PNP Epitaxial Type A1150 2SA1150 transistor a1150 2SC2710 sA1150
2SC2710 Abstract: 2SA1150 C1602 Text: 2SC2710 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2710 Unit in mm FOR AUDIO AMPLIFIER APPLICATIONS • • High DC Current Gain : Complementary to 2SA1150 (i) = 100~320 4.2M AX. 0.55M AX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	PDF	2SC2710 2SA1150 55MAX. 2SC2710 C1602
A1150 transistor Abstract: 2SA1150 2SC2710 A1150 Text: 2SA1150 TO SH IBA 2 S A 1 150 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS 4.2M AX. • • High hpE • hpE -100~320 Complementary to 2SC2710. 0.55M AX. i-0 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	PDF	2SA1150 2SC2710. A1150 transistor 2SA1150 2SC2710 A1150

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2SA115 Search Results

2SA115 Result Highlights (2)

2SA115 Price and Stock

3M Interconnect 1U30A-MB2-SA1-150

3M Interconnect 1U30S-MB2-SA1-150

3M Interconnect 1U30A-MB2-SA1-150-CE

Rochester Electronics LLC 2SA1152-A

ITT Interconnect Solutions CA3106KE20-22S-A115

2SA115 Datasheets (103)

2SA115 Datasheets Context Search

2SC2710

2SA1150

2SA1150

Untitled

Untitled

2SA115

2SC2710

LM8550

Untitled

2SA1150

2SA1150

Untitled

Untitled

2sA1152

2SA1150

25C2710

N1H1

Untitled

2SB1545

2SA1156

Untitled

A1150 transistor

2SC2710

A1150 transistor