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3M Interconnect 1U30A-MB2-SA1-150 USB3 VISION INDUSTRIAL CAMERA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1U30A-MB2-SA1-150	Bulk	55		1	1 $40.72 10 $33.197 100 $27.25 1000 $27.25 10000 $27.25	Buy Now
Avnet Americas	1U30A-MB2-SA1-150	Bulk		19 Weeks, 1 Days	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	1U30A-MB2-SA1-150					1 - 10 - 100 $27.25 1000 $27.25 10000 $27.25	Get Quote
3M Interconnect 1U30S-MB2-SA1-150 USB3 CABLE ASSEMBLY 1.5 METER
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DigiKey	1U30S-MB2-SA1-150	Box	35		1	1 $56.19 10 $45.804 100 $38.7485 1000 $38.7485 10000 $38.7485	Buy Now
Mouser Electronics	1U30S-MB2-SA1-150		46			1 $53.22 10 $48.84 100 $42.89 1000 $42.89 10000 $42.89	Buy Now
Interstate Connecting Components	1U30S-MB2-SA1-150		6			1 $61.9976 10 $49.9981 100 $49.2044 1000 $49.2044 10000 $49.2044	Buy Now
3M Interconnect 1U30A-MB2-SA1-150-CE USB3 VISON INDUSTRIAL CAMERA CAB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1U30A-MB2-SA1-150-CE	Bulk	20		1	1 $40.72 10 $33.197 100 $27.25 1000 $27.25 10000 $27.25	Buy Now
Avnet Americas	1U30A-MB2-SA1-150-CE	Bulk		25 Weeks, 1 Days	25	1 - 10 - 100 $29.648 1000 $27.904 10000 $27.904	Buy Now
Mouser Electronics	1U30A-MB2-SA1-150-CE					1 - 10 - 100 $46.1 1000 $46.1 10000 $46.1	Get Quote
3M 1U30S-MB2-SA1-150 (ALTERNATE: 04550309217204) Cable, Plug to Plug, USB micro B to USB Standard A, Black, 1.5 Meters \| 3M 1U30S-MB2-SA1-150
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RS	1U30S-MB2-SA1-150 (ALTERNATE: 04550309217204)	Bulk		106 Weeks	25	1 - 10 - 100 $52.69 1000 $52.69 10000 $52.69	Get Quote
3M Interconnect 7010684086 USB Cables / IEEE 1394 Cables USB3 VISON CAMERA CBL ASSY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	7010684086	Bulk	50		1	1 $40.73 10 $35.67 100 $31.93 1000 $30.16 10000 $30.16	Buy Now

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2SA1150 Datasheets (18)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA1150	Toshiba	TRANS GP BJT PNP 30V 0.8A 3(2-4E1A)	Original	PDF
2SA1150	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SA1150	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SA1150	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SA1150	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA1150	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SA1150	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1150	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SA1150	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SA1150	Unknown	Cross Reference Datasheet	Scan	PDF
2SA1150	Toshiba	SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR	Scan	PDF
2SA1150	Toshiba	TRANSISTOR (LOW FREQUENCY AMPLIFIER APPLICATIONS)	Scan	PDF
2SA1150	Toshiba	PNP transistor	Scan	PDF
2SA1150	Toshiba	TO-92 Mini Package Transistors / Junction FETs	Scan	PDF

2SA1150O	Toshiba	TRANS GP BJT PNP 30V 0.8A 3(2-4E1A)	Original	PDF
2SA1150-O	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1150Y	Toshiba	TRANS GP BJT PNP 30V 0.8A 3(2-4E1A)	Original	PDF
2SA1150-Y	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF

2SA1150 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SC2710 Abstract: 2SA1150 Text: 2SC2710 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC2710 ○ 低周波増幅用単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • 2SA1150 とコンプリメンタリになります。絶対最大定格 (Ta = 25°C)	Original	PDF	2SC2710 2SA1150 2SC2710 2SA1150
2SA1150 Abstract: 2SC2710 Text: 2SA1150 シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA1150 ○ 低周波増幅用単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC2710 とコンプリメンタリになります。絶対最大定格 (Ta = 25°C)	Original	PDF	2SA1150 2SC2710 2SA1150 2SC2710
2SA1150 Abstract: 2SC2710 Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage	Original	PDF	2SA1150 2SC2710. 2SA1150 2SC2710
Untitled Abstract: No abstract text available Text: 2SA1150Y Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SA1150Y Freq120M
2SC2710 Abstract: 2SA1150 Text: 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating	Original	PDF	2SC2710 2SA1150 2SC2710 2SA1150
LM8550 Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960 Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo	Original	PDF	2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Untitled Abstract: No abstract text available Text: 2SA1150O Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SA1150O Freq120M
2SA1150 Abstract: 2SA115 2SC2710 Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 · Complementary to 2SC2710. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage	Original	PDF	2SA1150 2SC2710. 2SA1150 2SA115 2SC2710
2SA1150 Abstract: No abstract text available Text: 2SA1150 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SA1150 Freq120M
2SA1150 Abstract: 2SC2710 Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage	Original	PDF	2SA1150 2SC2710. 2SA1150 2SC2710
2SC2710 Abstract: 2SA1150 Text: 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 • Complementary to 2SA1150 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating	Original	PDF	2SC2710 2SA1150 2SC2710 2SA1150
2SA1150 Abstract: 2SC2710 Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage	Original	PDF	2SA1150 2SC2710. 2SA1150 2SC2710
2SC2710 Abstract: 2SA115 2SA1150 Text: 2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2710 For Audio Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 100~320 · Complementary to 2SA1150 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage	Original	PDF	2SC2710 2SA1150 2SC2710 2SA115 2SA1150
alternator diode 1776 B Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)	Original	PDF	Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

N1H1 Abstract: No abstract text available Text: 2SA1150 TOSHIBA TOSHIBA TRANSISTOR 2 SILICON PNP EPITAXIAL TYPE PCT PROCESS S A 1 1 5 Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS 4.2 MAX. • High IrpE : ^FE = 100~320 • Complementary to 2SC2710. 0.55MAX. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC	OCR Scan	PDF	2SA1150 2SC2710. 55MAX. N1H1
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2710 FOR AUDIO AM PLIFIER APPLICATIONS • High DC Current Gain : • Complementary to 2SA1150 U nit in mm 4.2M AX. hpE (i) = 100~320 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC	OCR Scan	PDF	2SC2710 2SA1150
A1150 transistor Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type A1150 2SA1150 transistor a1150 2SC2710 sA1150 Text: 2SA1150 TOSHIBA 2 S A 1 150 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LO W FREQUENCY AM PLIFIER APPLICATIONS 4.2M AX. • • High hpE : hRE —100~320 Complementary to 2SC2710. 0.55MAX. M A X IM U M RATINGS (Ta = 25°C) SYMBOL	OCR Scan	PDF	2SA1150 2SC2710. 55MAX. A1150 transistor TOSHIBA Transistor Silicon PNP Epitaxial Type A1150 2SA1150 transistor a1150 2SC2710 sA1150
2SC2710 Abstract: 2SA1150 C1602 Text: 2SC2710 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2710 Unit in mm FOR AUDIO AMPLIFIER APPLICATIONS • • High DC Current Gain : Complementary to 2SA1150 (i) = 100~320 4.2M AX. 0.55M AX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	PDF	2SC2710 2SA1150 55MAX. 2SC2710 C1602
A1150 transistor Abstract: 2SA1150 2SC2710 A1150 Text: 2SA1150 TO SH IBA 2 S A 1 150 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS 4.2M AX. • • High hpE • hpE -100~320 Complementary to 2SC2710. 0.55M AX. i-0 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	PDF	2SA1150 2SC2710. A1150 transistor 2SA1150 2SC2710 A1150
Untitled Abstract: No abstract text available Text: TO SH IB A 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS n r ? MT 7 m i n m w FOR AUDIO AMPLIFIER APPLICATIONS • High DC C urrent Gain : • Complementary to 2SA1150 U nit in mm 4.2MAX. hjr>E(l)-100~320 0.55MAX. MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	PDF	2SC2710 2SA1150 55MAX.
Untitled Abstract: No abstract text available Text: 2SA1150 TOSHIBA 2 S A 1 1 50 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LO W FREQUENCY AMPLIFIER APPLICATIONS 4 .2 M A X . • • High hpE : hFE = 100~320 Complementary to 2SC2710. 0 .5 5 M A X - M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	PDF	2SA1150 2SC2710.
2N3904 331 transistor Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 2SC1815(L) — 2SC2995 — * 2N3904 — 2SA1245 167 2SC1923 — 2SC2996 266 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272	OCR Scan	PDF	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
b 817 Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194 Text: - £ Type No. jcg 7 \|3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818	OCR Scan	PDF	2SA1703 2SB909M 2SA1705 2SB1044M 2SB1214 2SA1194 2SB1272 2SB76500 2SB1119 b 817 toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a
RTIP144C Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.	OCR Scan	PDF	2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

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2SA1150 Price and Stock

3M Interconnect 1U30A-MB2-SA1-150

3M Interconnect 1U30S-MB2-SA1-150

3M Interconnect 1U30A-MB2-SA1-150-CE

3M 1U30S-MB2-SA1-150 (ALTERNATE: 04550309217204)

3M Interconnect 7010684086

2SA1150 Datasheets (18)

2SA1150 Datasheets Context Search

2SC2710

2SA1150

2SA1150

Untitled

2SC2710

LM8550

Untitled

2SA1150

2SA1150

2SA1150

2SC2710

2SA1150

2SC2710

alternator diode 1776 B

N1H1

Untitled

A1150 transistor

2SC2710

A1150 transistor

Untitled

Untitled

2N3904 331 transistor

b 817

RTIP144C