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    2SA1225 Search Results

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    2SA1225 Price and Stock

    Toshiba America Electronic Components 2SA1225-Y(Q)

    TRANS PNP 160V 1.5A PW-MOLD
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    DigiKey 2SA1225-Y(Q) Bulk 200
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    Toshiba America Electronic Components 2SA1225-Y(T6L1,NV)

    TOS2SA1225-Y(T6L1,NV) POWER TRANSISTOR F (Alt: 2SA1225-Y(T6L1,NV))
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    Avnet Asia 2SA1225-Y(T6L1,NV) 24 Weeks 2,000
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    2SA1225 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1225 Toshiba TRANS GP BJT PNP 160V 1.5A 3(2-7B1A) Original PDF
    2SA1225 Toshiba Silicon PNP Transistor Original PDF
    2SA1225 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SA1225 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1225 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1225 Unknown Cross Reference Datasheet Scan PDF
    2SA1225 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1225 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1225 Unknown PNP Transistor Scan PDF
    2SA1225 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1225 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1225 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1225 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1225 Toshiba Silicon PNP transistor for power amplifier and driver stage amplifier applications Scan PDF
    2SA1225(2-7B1A) Toshiba 2SA1225 - TRANSISTOR 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1225(2-7B2A) Toshiba 2SA1225 - TRANSISTOR 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1225(2-7J1A) Toshiba 2SA1225 - TRANSISTOR 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7J1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1225-O Toshiba 2SA1225 - TRANSISTOR 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1225O Toshiba TRANS GP BJT PNP 160V 1.5A 3(2-7B1A) Original PDF
    2SA1225-O(2-7B1A) Toshiba 2SA1225 - TRANSISTOR 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original PDF

    2SA1225 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C2983

    Abstract: No abstract text available
    Text: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC2983 2SA1225 C2983

    Untitled

    Abstract: No abstract text available
    Text: 2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Unit: mm Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1225 2SC2983

    Untitled

    Abstract: No abstract text available
    Text: 2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1225 2SC2983

    2SA1225

    Abstract: 2SC2983 A1225
    Text: 2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Unit: mm Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1225 2SC2983 2SA1225 2SC2983 A1225

    Untitled

    Abstract: No abstract text available
    Text: 2SA1225 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1225 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジジョン周波数が高い。: fT = 100 MHz (標準) • 2SC2983 とコンプリメンタリになります。


    Original     		PDF 2SA1225 2SC2983

    C2983

    Abstract: 2SC2983 2SA1225
    Text: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) · Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC2983 2SA1225 C2983 2SC2983 2SA1225

    2SA1225

    Abstract: A1225 2SC2983
    Text: 2SA1225 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1225 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジジョン周波数が高い。: fT = 100 MHz (標準) • 2SC2983 とコンプリメンタリになります。


    Original     		PDF 2SA1225 2SC2983 2SA1225 A1225 2SC2983

    C2983

    Abstract: 2SA1225 2SC2983
    Text: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC2983 2SA1225 C2983 2SA1225 2SC2983

    C2983

    Abstract: 2SA1225 2SC2983
    Text: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC2983 2SA1225 C2983 2SA1225 2SC2983

    2sa1225

    Abstract: No abstract text available
    Text: 2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Unit: mm Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA1225 2SC2983 2sa1225

    2SA1225

    Abstract: A1225 2SC2983
    Text: 2SA1225 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1225 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジジョン周波数が高い。: fT = 100 MHz (標準) • 2SC2983 とコンプリメンタリになります。


    Original     		PDF 2SA1225 2SC2983 20070701-JA 2SA1225 A1225 2SC2983

    C2983

    Abstract: 2SA1225 2SC2983
    Text: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC2983 2SA1225 C2983 2SA1225 2SC2983

    C2983

    Abstract: 2SC2983 2SA1225
    Text: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC2983 2SA1225 C2983 2SC2983 2SA1225

    Untitled

    Abstract: No abstract text available
    Text: 2SC2983 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2983 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジジョン周波数が高い。: fT = 100 MHz (標準) • 2SA1225 とコンプリメンタリになります。


    Original     		PDF 2SC2983 2SA1225

    2SA1225

    Abstract: 2SC2983
    Text: TOSHIBA 2SC2983 T O S H IB A T R A N SIST O R SILICON NPN E P IT A X IA L T Y PE PCT PRO CESS 2SC2983 P O W E R A M P L IF IE R A PPLIC A TIO N S D RIV ER STAGE A M P L IF IE R A PPLIC A T IO N S • • High Transition Frequency : fp = 100 MHz (Typ.) Complementary to 2SA1225


    OCR Scan     		PDF 2SC2983 2SA1225 2SA1225 2SC2983

    2SA1225

    Abstract: 2SC2983
    Text: 2SA1225 TO SH IBA 2 S A 1 225 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS • • High Transition Frequency : fp = 100 MHz (Typ.) Complementary to 2SC2983 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SA1225 2SC2983 2SA1225

    2SA1225

    Abstract: 2SC2983 A1225
    Text: 2SA1225 TOSHIBA 2 S A 1 225 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS • • High Transition Frequency : fp = 100 MHz (Typ.) Complementary to 2SC2983 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SA1225 2SC2983 961001EAA1 2SA1225 A1225

    2SA1115

    Abstract: 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753
    Text: - m £ tt « Type No. Man uf. 2SB 1249 = 2 SB 1250 2 SB 1251 2SB 1252 fé T K T s fâ T fô T 2 SB 1253 2SB 1257 2SB 1258 - if'y'ry ÿ-yjy 2SB 1259, 2SB 1260 2SB 1261 = £ SANYO 2SA15 9 2 2SB1226 2SB1227 2SB1227 2SB1228 2SBÌ223 2SB1228 a 3C T0SHÍBA 2SA1225


    OCR Scan     		PDF 2SA1225 2SA1178 2SB1226 2SB1024 2SB1342 2SB1227 2SB1024 2SB1430 2SA1115 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753

    2SA1225

    Abstract: 2SC2983
    Text: TO SH IBA 2SC2983 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2983 DRIVER STAGE AMPLIFIER APPLICATIONS • • High Transition Frequency : Pp = 100 MHz (Typ.) Complementary to 2SA1225 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC2983 2SA1225 2SA1225 2SC2983

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SC2983 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2983 DRIVER STAGE AMPLIFIER APPLICATIONS • • High Transition Frequency : Pp = 100 MHz (Typ.) Complementary to 2SA1225 MAXIMUM RATINGS (Tc = 25°C)


    OCR Scan     		PDF 2SC2983 2SA1225

    S1854

    Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
    Text: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686


    OCR Scan     		PDF 2SA473 2SB553 2SA656A 2SB554 2SA657A 2SB595 2SA658A 2SB596 2SA739 2SB673 S1854 s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001

    2sa1229

    Abstract: 2SA1215 2SA1227 SA1244 2SA1224 2SC3115 2sC3L 2SA1216 2SA1220 2SA1220A
    Text: - 26 - Ta=25<C. *EPfäTc=25‘0 m 2SA1215 2SA1216 2SA1220 2SA1220A 2SA1221 % it if > * r y -vyà-y sn. H M H M B U 2SA1223 2SA1224 2SA1225 2SA1226 0CA 1oon to m 66 r B M B M 2SA1227A 2SA1229 2SA1232 2SA1235 2SA1237 2SA1238 2SA1239 2SA1240 2SA1241 2SA1242


    OCR Scan     		PDF 2SA1215 2SA1216 2SA1220 2SA1220A 2SA1221 2SC3116 O-126) 2SA1248 2SC3117 2sa1229 2SA1227 SA1244 2SA1224 2SC3115 2sC3L

    Untitled

    Abstract: No abstract text available
    Text: 2SA1225 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 3 Ç A1 11 *5 Unit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. 6 8 MAX. C. 6 MAX. * • High Transition Frequency : fr= 100MHz (Typ.) Complementary to 2SC2983


    OCR Scan     		PDF 2SA1225 100MHz 2SC2983 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: SILICO N NPN EPITAXIAL T Y P E 2SC2983 POWER AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: . High Transition Frequency fT=100MHz Typ. . Complementary to 2SA1225 MAXIMUM RATINGS (Ta=25 C) SYMBOL RATING Collector-Base Voltage


    OCR Scan     		PDF 2SC2983 2SA1225 100MHz 100mA 500mA, 500mA 100mA