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    2SA1362 Search Results

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    2SA1362 Price and Stock

    Toshiba America Electronic Components 2SA1362-GR,LF

    TRANS PNP 15V 0.8A S-MINI
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    DigiKey 2SA1362-GR,LF Cut Tape 7,279 1
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    2SA1362-GR,LF Digi-Reel 7,279 1
    • 1 $0.33
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    2SA1362-GR,LF Reel 3,000 3,000
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    Avnet Americas 2SA1362-GR,LF Reel 16 Weeks 3,000
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    Mouser Electronics 2SA1362-GR,LF 5,900
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    TTI 2SA1362-GR,LF Reel 3,000
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    Toshiba America Electronic Components 2SA1362-GR,LF(T

    Transistor, Pnp, 15V, 0.8A, Sot-346 Rohs Compliant: Yes |Toshiba 2SA1362-GR, LF(T
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    Newark 2SA1362-GR,LF(T Cut Tape 3,000 5
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    2SA1362-GR,LF(T Reel 3,000
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    Chip One Stop 2SA1362-GR,LF(T Cut Tape 4,981
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    EBV Elektronik 2SA1362-GR,LF(T 30,000 27 Weeks 3,000
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    New Advantage Corporation 2SA1362-GR,LF(T 24,000 1
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    Quest Components 2SA1362-Y,LF(B 2,260
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    • 1000 $0.225
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    Quest Components 2SA1362-Y(TE85R) 425
    • 1 $0.7
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    • 100 $0.42
    • 1000 $0.35
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    Toshiba America Electronic Components 2SA1362GR

    SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Small Signal Bipolar Transistor, 0.8A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
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    ComSIT USA 2SA1362GR 2,842
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    2SA1362 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1362 Continental Device India Low Frequency Power Amplifier Transistor Original PDF
    2SA1362 Kexin PNP Silicon Epitaxial Transistor Original PDF
    2SA1362 Toshiba General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: High current; DC Current Gain hFE, min: (min 120) (max 400); DC Current Gain hFE, max: (max -0.2); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max -15) Original PDF
    2SA1362 TY Semiconductor PNP Silicon Epitaxial Transistor - SOT-23 Original PDF
    2SA1362 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1362 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1362 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1362 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1362 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1362 Toshiba PNP transistor Scan PDF
    2SA1362 Toshiba TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, SWITCHING APPLICATIONS) Scan PDF
    2SA1362 Toshiba Super Mini Package (TO-236 / SOT-23) Transistors Scan PDF
    2SA1362-GR Toshiba 2SA1362 - TRANSISTOR 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1362GR Toshiba Silicon PNP Epitaxial Planar Transistor Scan PDF
    2SA1362-GR,LF Toshiba America Electronic Components PNP TRANSISTOR VCEO-15V IC-0.8A Original PDF
    2SA1362-GR(T5L,F,T Toshiba 2SA1362 - TRANSISTOR PNP 15V 800MA 2-3F1A Original PDF
    2SA1362GRTE85L Toshiba 2SA1362 - TRANSISTOR 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF
    2SA1362GRTE85R Toshiba 2SA1362 - TRANSISTOR 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF
    2SA1362TE85L Toshiba 2SA1362 - TRANSISTOR 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF
    2SA1362TE85R Toshiba 2SA1362 - TRANSISTOR 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal Original PDF

    2SA1362 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1362 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V) I(C) Max. (A)800m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).2 @I(C) (A) (Test Condition)400m


    Original
    2SA1362 Freq120M PDF

    2SA1362

    Abstract: No abstract text available
    Text: 2SA1362 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1362 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 120~400 • コレクタ・エミッタ間飽和電圧が低い。


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    2SA1362 O-236MOD SC-59 2SA1362 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE = 120 to 400 • Low saturation voltage: VCE (sat) = −0.2 V (max) (IC = −400 mA, IB = −8 mA)


    Original
    2SA1362 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SA1362 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Small package. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 High DC Current Gain Low Saturation Voltage Suitable for Driver Stage of Small Motor 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original
    OT-23 PDF

    2SA1362

    Abstract: SMD iC MARKING AE AE MARKING
    Text: Transistors IC SMD Type Silicon PNP Epitaxia 2SA1362 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 Small package. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Suitable for driver stage of small motor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


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    2SA1362 OT-23 2SA1362 SMD iC MARKING AE AE MARKING PDF

    2SA1362

    Abstract: No abstract text available
    Text: 2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE = 120~400 · Low saturation voltage: VCE (sat) = −0.2 V (max) · Suitable for driver stage of small motor


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    2SA1362 2SA1362 PDF

    2SA1362

    Abstract: No abstract text available
    Text: 2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE = 120~400 • Low saturation voltage: VCE (sat) = −0.2 V (max) • Suitable for driver stage of small motor


    Original
    2SA1362 SC-59 2SA1362 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SA1362 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Small package. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 High DC Current Gain Low Saturation Voltage Suitable for Driver Stage of Small Motor 2


    Original
    OT-23 PDF

    2SA1362

    Abstract: No abstract text available
    Text: 2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE = 120~400 • Low saturation voltage: VCE (sat) = −0.2 V (max) • Suitable for driver stage of small motor


    Original
    2SA1362 O-236MOD SC-59 2SA1362 PDF

    2SA1362

    Abstract: No abstract text available
    Text: 2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1362 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE = 120~400 • Low saturation voltage: VCE (sat) = −0.2 V (max) • Suitable for driver stage of small motor


    Original
    2SA1362 2SA1362 PDF

    S-8324

    Abstract: S-8324A27MC-EOH-T2 S-8324A30MC-EOK-T2 S-8324A33MC-EON-T2 S-8324A50MC-EPE-T2 S-8328
    Text: Contents Features . 1 Applications . 1 Block Diagram . 1 Selection Guide . 2


    Original
    S-8328B50 S-8328B30 S-8324 S-8324A27MC-EOH-T2 S-8324A30MC-EOK-T2 S-8324A33MC-EON-T2 S-8324A50MC-EPE-T2 S-8328 PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    2SA1362

    Abstract: SSOP24 TA2002F TA2002FN
    Text: TA2002F / FN TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA2002F,TA2002FN Stereo Headphone Amplifier 3V USE The TA2002F, TA2002FN are developed for play−back stereo headphone equipments (3V use). They are built in dual auto−reverse preamplifier, dual OCL


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    TA2002F TA2002FN TA2002F, TA2002FN 2SA1362 SSOP24 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1362 T O SH IB A 2 S A 1 362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • + 0 .5 2 . 5 - 0 .3 High DC Current Gain : hpE —120~400 Low Saturation Voltage


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    2SA1362 400mA, PDF

    2SA1362

    Abstract: A1362
    Text: TOSHIBA 2SA1362 2 S A 1 362 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS LO W FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. • • High DC Current Gain : hpE = 120~400 Low Saturation Voltage : V ce (sat) = -0.2V (Max.) (Ic = -400mA, IB = -8mA)


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    2SA1362 -400mA, 961001EAA2' 2SA1362 A1362 PDF

    2SA1362

    Abstract: A1362
    Text: 2SA1362 TO SH IBA 2 S A 1 362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • • + 0.5 2.5 —0.3 High DC Current Gain : hpE —120—400 Low Saturation Voltage


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    2SA1362 -400m 2SA1362 A1362 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 13 6 2 LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. U n it in mm + CL5 3 .5 - 0 .3 : + 0.85 • H igh D C C u rren t G ain h ^ E —120—400 •


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    2SA1362 -400m 961001EAA2' PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor Marking 2SA1362 = AE PACKAGE O U TLIN E DETAILS ALL D IM EN SIO N S IN mm 3.0 ~2.B ~ Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2« . 2.4 I TJ 3 J 1’.0 2 J Cl.89 0.60 0.40 ABSOLUTE MAXIMUM RATINGS


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    2SA1362 23fl33T4 PDF

    2SA1362

    Abstract: No abstract text available
    Text: 2SA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor M ark in g 2SA1362 = AE P A C K A G E O U T L IN E D ETA ILS A LL D IM E N S IO N S IN m m 3.0 ~2.B Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 X I tJ 3 1.02J 0.89 2 .00_


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    2SA1362 23fl33T4 2SA1362 PDF

    2SC3340

    Abstract: 2SA1324 2SC3339 2SC3426
    Text: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage


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    O-236 /SOT-23 2SA1162 15NEW) 2SC2532 2SC2714 2SC2715 2SC2716 2SC2996 2SC3340 2SA1324 2SC3339 2SC3426 PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF

    high voltage pnp transistor 700v

    Abstract: 743V pnp transistor 800v
    Text: Section 3.4 POWER MANAGEMENT 1C • Description The S-8470AFS is a CMOS power management 1C for portable telephones. It contains a watch­ dog timer circuit, in addition to four series-type voltage regulators and four voltage detectors. Features • Four built-in high-precision voltage regulators with


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    S-8470AFS high voltage pnp transistor 700v 743V pnp transistor 800v PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE TA8302F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA 8302F MOTOR DRIVER FOR CAMERA TA8302F is Multi Chip 1C incorporates 6 low saturation discrete transistors which equipped bias resistor and FreeWheeling diode. This 1C is suitable for a camera use motor drive


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    TA8302F 8302F TA8302F SSOP16 600mA RN5006 300mA 2SA1362 2SC2982 PDF