2SA812 Search Results

2SA812 Result Highlights (5)

Part	Manufacturer	Description
2SA812A-T1B-AT	Renesas Electronics Corporation	Small Signal Bipolar Transistors, MM, /
2SA812(0)-T1B-AT	Renesas Electronics Corporation	Small Signal Bipolar Transistors
2SA812-T2B-A	Renesas Electronics Corporation	Small Signal Bipolar Transistors, MM, /
2SA812-T1B-AT	Renesas Electronics Corporation	Small Signal Bipolar Transistors, MM, /
2SA812(0)-T1B-A	Renesas Electronics Corporation	Small Signal Bipolar Transistors

2SA812 Price and Stock

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Micro Commercial Components 2SA812-M5-AP TRANS PNP 50V 0.1A SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA812-M5-AP	Ammo Pack				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Micro Commercial Components 2SA812-M6-TP Interface
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA812-M6-TP	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.03092	Buy Now
Mouser Electronics	2SA812-M6-TP		6,657			1 $0.16 10 $0.11 100 $0.07 1000 $0.031 10000 $0.023	Buy Now
Micro Commercial Components 2SA812-M4-AP TRANS PNP 50V 0.1A SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA812-M4-AP	Ammo Pack				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Micro Commercial Components 2SA812-M7-TP Interface
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA812-M7-TP	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.03859	Buy Now
Mouser Electronics	2SA812-M7-TP					1 $0.21 10 $0.146 100 $0.093 1000 $0.042 10000 $0.032	Get Quote
Rochester Electronics LLC 2SA812B-T1B-AT 2SA812B-T1B-AT - PNP SILICON EPI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA812B-T1B-AT	Bulk			4,121	1 - 10 - 100 - 1000 - 10000 $0.07	Buy Now

Find more 2SA812 price and stock on Findchips.com

2SA812 Datasheets (52)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA812	Galaxy Semi-Conductor Holdings	Silicon Epitaxial Planar Transistor	Original	PDF
2SA812	Kexin	PNP Silicon Epitaxial Transistor	Original	PDF
2SA812	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SA812	NEC	Semiconductor Selection Guide	Original	PDF
2SA812	NEC	Audio Frequencygeneral Purpose Amplifier Pnp Silicon Epitaxial Transistor Mini Mold	Original	PDF
2SA812	Transys Electronics	Plastic-Encapsulated Transistors	Original	PDF
2SA812	TY Semiconductor	PNP Silicon Epitaxial Transistor - SOT-23	Original	PDF
2SA812	Various Russian Datasheets	Transistor	Original	PDF
2SA812	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SA812	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA812	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SA812	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SA812	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SA812	Unknown	PNP transistor	Scan	PDF

2SA812	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SA812	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SA812	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA812	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SA812	NEC	PNP Silicon Epitaxial Transistor Mini Mold	Scan	PDF
2SA812-L	NEC	Silicon Transistor	Scan	PDF

2SA812 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
smd transistor m6 Abstract: transistor smd marking m6 smd transistor M5 smd transistor m7 M6 smd transistor smd transistor marking M6 m4 SMD Transistor SMD TRANSISTOR M6 SOT23 smd transistor marking M6 PNP smd transistor 2sa812 Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA812 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High DC Current Gain: hFE = 200 TYP. VCE = -6.0 V, IC = -1.0 mA 0.4 3 1 0.55 High Voltage: VCEO = -50 V 2 +0.1 0.95-0.1	Original	PDF	2SA812 OT-23 temperat100 smd transistor m6 transistor smd marking m6 smd transistor M5 smd transistor m7 M6 smd transistor smd transistor marking M6 m4 SMD Transistor SMD TRANSISTOR M6 SOT23 smd transistor marking M6 PNP smd transistor 2sa812
2SA812K Abstract: sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135 Text: 2SA812K -50 V, -100 mA PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. VCE = -6V, IC = -1mA	Original	PDF	2SA812K 2SC1623K OT-23 -100uA 100mA, -10mA 01-June-2002 2SA812K sot-23 Marking M6 M6 SOT23-3 marking of m7 diodes Diode marking m7 M6 Marking pnp m6 marking transistor sot-23 M6 transistor TRANSISTOR K 135
NEC C11531E Abstract: 2SA812 2SC1623 C11531E C1984 Text: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1	Original	PDF	2SA812 2SC1623 C11531E) NEC C11531E 2SA812 2SC1623 C11531E C1984
Untitled Abstract: No abstract text available Text: MCC 2SA812 omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • NPN Silicon Epitaxial Transistors High DC Current Gain:90≦ hFE≦600. VCE=-6.0V, IC=-1mA	Original	PDF	2SA812 hFE600. OT-23 60Vdc -100mAdc, -10mAdc)
2SA812 Abstract: No abstract text available Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates	Original	PDF	2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 OT-23 2SA812
m6 marking transistor sot-23 Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812 Text: 2SA812 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value	Original	PDF	2SA812 OT-23 OT-23 2SC1623 -100A, -100mA, -10mA -10mA m6 marking transistor sot-23 transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
m6 marking transistor sot-23 Abstract: sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623 Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier	Original	PDF	2SA812 2SC1623. 200typ. OT-23 BL/SSSTC010 m6 marking transistor sot-23 sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623
Diode marking m7 Abstract: marking of m7 diodes marking M4 Text: MCC TM Micro Commercial Components 2SA812 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features x x High DC Current Gain:90Љ hFEЉ600. VCE=-6.0V, IC=-1mA High voltage: VCEO=-50V x Case Material: Molded Plastic. UL Flammability	Original	PDF	2SA812 OT-23 Diode marking m7 marking of m7 diodes marking M4
2SA812 Abstract: 2sa812 transistor Text: 2SA812 SOT-23-3L TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 0. 95¡ À0. 025 PCM : 1. 02 Power dissipation 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM : -0.1 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range	Original	PDF	2SA812 OT-23-3L -10mA 2SA812 2sa812 transistor
2SA812A Abstract: 2SC1623A Text: DATA SHEET SILICON TRANSISTOR 2SA812A PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623A • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C)	Original	PDF	2SA812A 2SC1623A 2SA812A 2SC1623A
Untitled Abstract: No abstract text available Text: Product specification 2SA812 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High DC Current Gain: hFE = 200 TYP. VCE = -6.0 V, IC = -1.0 mA 0.4 3 1 0.55 High Voltage: VCEO = -50 V 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1	Original	PDF	2SA812 OT-23
2SA812-M7 Abstract: 2SA812M5 2SA812 2SA812M6 2SA812-M4 Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates	Original	PDF	2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 OT-23 hFE600. 2SA812-M7 2SA812M5 2SA812 2SA812M6
Untitled Abstract: No abstract text available Text: MCC 2SA812 omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • PNP Silicon Epitaxial Transistors High DC Current Gain:90≦ hFE≦600. VCE=-6.0V, IC=-1mA	Original	PDF	2SA812 hFE600. OT-23 60Vdc -10mAdc)
2SA812 Abstract: m6 marking transistor sot-23 2SA812M6 2SA812-M6 Text: 2SA812 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 2SC1623 * Collector-Base Voltage :Vcbo= -60V * Excellent Hfe linearity Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃	Original	PDF	2SA812 2SC1623 OT-23 -100mA -10mA 062in Width300uS 2SA812 m6 marking transistor sot-23 2SA812M6 2SA812-M6

2SA812 Abstract: No abstract text available Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SA812 SOT-23-3L TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current A ICM : -0.1 Collector-base voltage V V(BR)CBO : -60	Original	PDF	OT-23-3L 2SA812 OT-23-3L -10mA 2SA812
m6 marking transistor sot-23 Abstract: No abstract text available Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier	Original	PDF	2SA812 2SC1623. 200typ. OT-23 BL/SSSTC010 m6 marking transistor sot-23
2SA812M6 Abstract: 2SA812 2SC1623 Text: 2SA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * * * Complement to 2SC1623 Collector-Base Voltage :Vcbo= -60V Excellent Hfe linearity 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo -60 V Collector-Emitter Voltage	Original	PDF	2SA812 2SC1623 -100mA -10mA 062in 300uS 2SA812 2SA812M6 2SC1623
Untitled Abstract: No abstract text available Text: MCC 2SA812 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • NPN Silicon Epitaxial Transistors High DC Current Gain:90≦ hFE≦600. VCE=-6.0V, IC=-1mA High voltage: VCEO=-50V	Original	PDF	2SA812 hFE600. OT-23 60Vdc -100mAdc, -10mAdc)
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components 2SA812 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • PNP Silicon Epitaxial Transistors High DC Current Gain:90≦ hFE≦600. VCE=-6.0V, IC=-1mA	Original	PDF	2SA812 hFE600. OT-23
2SA81 Abstract: 2sA812R Text: 2SA812,2SA812R Audio Frequency, General Purpose Amplifier P N P Silicon Epitaxial Transistor P A C K A G E D IM E N S IO N S • Com plem entary to 2 S C 1 6 2 3 . in millimeters inches • H igh D C Current Gain: h F £ = 2 0 0 T Y P . ( V C E = - 6 . 0 V , lc = - 1 . 0 m A i	OCR Scan	PDF	2SA812 2SA812R 2SC1623 2SA81 2sA812R
2SA812 Abstract: No abstract text available Text: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAG E DIMENSIONS * C om plem en ta ry to 2SC1623 in m illim e t e r s * H igh D C Cu rren t Gain: * H igh Voltage: V ceo hFE - 200 T YP.	OCR Scan	PDF	2SA812 2SC1623 IEI-1209) 2SA812
Untitled Abstract: No abstract text available Text: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS i r m illim e te rs • Com plem entary to 2SC1623 • High DC C u rrent Gain: hpg = 200 TY P . V c e 5 - 6 .0 V , lc = —1.0 m A	OCR Scan	PDF	2SA812 2SC1623
2SA1301 TOSHIBA Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782 Text: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207	OCR Scan	PDF	2SA1415 2SA1782 2SA1048 2SA1127 SA1299 2SA933S 2SA104S 2SA1337 SA112 2SA1301 TOSHIBA da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646
2SC3735 Abstract: 1SS153 Text: Q U ICK REFERENCE GUIDE 3 TABLE OF SAME CH ARACTERISTICS IN DEFERENT PACKAGES 3 PIN SU P E R M IN I M O L D (FIG. 6) 3 PIN M IN I M O L D (FIG 4} FM /A M M IX ./ O SC / IF 2SC4179 2SC1009A AF A M P 2SA1611 2SA812 2SA1612 2SA811A A P P LIC A T IO N Driver, Output	OCR Scan	PDF	2SC4179 2SA1611 2SA1612 2SC4177 2SC4180 2SC4181 2SK853ADriver, 2SC1009A 2SA812 2SA811A 2SC3735 1SS153

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2SA812 Search Results

2SA812 Result Highlights (5)

2SA812 Price and Stock

Micro Commercial Components 2SA812-M5-AP

Micro Commercial Components 2SA812-M6-TP

Micro Commercial Components 2SA812-M4-AP

Micro Commercial Components 2SA812-M7-TP

Rochester Electronics LLC 2SA812B-T1B-AT

2SA812 Datasheets (52)

2SA812 Datasheets Context Search

smd transistor m6

2SA812K

NEC C11531E

Untitled

2SA812

m6 marking transistor sot-23

m6 marking transistor sot-23

Diode marking m7

2SA812

2SA812A

Untitled

2SA812-M7

Untitled

2SA812

2SA812

m6 marking transistor sot-23

2SA812M6

Untitled

Untitled

2SA81

2SA812

Untitled

2SA1301 TOSHIBA

2SC3735