Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SB1169A Search Results

    2SB1169A Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1169A Kexin Silicon PNP Epitaxial Planar Type Original PDF
    2SB1169A Panasonic For power amplification Original PDF
    2SB1169A TY Semiconductor Silicon PNP Epitaxial Planar Type - TO-252 Original PDF
    2SB1169A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1169A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1169A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1169A Panasonic Power Transistors Scan PDF
    2SB1169AO Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF
    2SB1169AP Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF
    2SB1169AQ Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF
    2SB1169AR Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF

    2SB1169A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SB1169A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High forward current transfer ratio hFE which has satisfactory linearity. +0.1 0.60-0.1 2.3 3 .8 0 +0.15


    Original     		2SB1169A O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1169, 2SB1169A Silicon PNP epitaxial planar type For power amplification Unit : mm 7.0±0.3 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat)


    Original     		2002/95/EC) 2SB1169, 2SB1169A 2SB1169 2SB1169A PDF

    2SB1169

    Abstract: 2SB1169A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1169, 2SB1169A Silicon PNP epitaxial planar type For power amplification Unit : mm M Di ain sc te on na tin nc ue e/ d 7.0±0.3 • High forward current transfer ratio hFE which has satisfactory linearity


    Original     		2002/95/EC) 2SB1169, 2SB1169A 2SB1169 2SB1169 2SB1169A PDF

    2SB1169

    Abstract: 2SB1169A
    Text: Power Transistors 2SB1169, 2SB1169A Silicon PNP epitaxial planar type For power amplification Unit : mm 7.0±0.3 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE sat • I type package enabling direct soldering of the radiating fin to the


    Original     		2SB1169, 2SB1169A 2SB1169 25ues, 2SB1169 2SB1169A PDF

    2SB1169A

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1169A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High forward current transfer ratio hFE which has satisfactory linearity. +0.1 0.60-0.1 2.3


    Original     		2SB1169A O-252 2SB1169A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1169, 2SB1169A Silicon PNP epitaxial planar type For power amplification Unit : mm 7.0±0.3 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat)


    Original     		2002/95/EC) 2SB1169, 2SB1169A 2SB1169 2SB1169A PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1169, 2SB1169A b<ï32aS2 0 G lb 2 3 3 S8b 2SB1169, 2SB1169A Silicon PNP Epitaxial Planar Type Package Dim ensions Pow er Amplifier U nit : mm • Features • High DC current gain I i f e and good linearity • Low collector-emitter voltage ( V c e )


    OCR Scan     		2SB1169, 2SB1169A 32aS2 2SB1169 10MHz PDF

    2SB1169

    Abstract: 2SB1169A
    Text: Power Transistors b < i3 2 a S 2 0 G lt 2 3 3 2SB1169, 2SB1169A Sflb 2SB1169, 2SB1169A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Unit I mm • Features • High DC current gain I i f e and good linearity • Low collector-emitter voltage ( V c e )


    OCR Scan     		32aS2 0Glt233 2SB1169, 2SB1169A 2SB1169 2SB1169A PDF

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C PDF

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


    OCR Scan     		125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526 PDF

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


    OCR Scan     		2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A PDF

    SB-116

    Abstract: 2sb1163 2SB1181F5 2SB1182F5 2sb174 2SB1157 2SB1158 2SB1159 2SB1160 2SB1161
    Text: - 78 - Ta=25eC, *Ep{ÎTc=25'C m g ffl & m Vcbo VcEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) ICBO ViuaA/ ilik) »^B (¥) m \m i n / w te & hF E y (Ta=25eO) u / î,- VIIIOA/ (V) [*EP(itypffl] /n o v i W W le (A) W I b (A) 2SB1Í5? tö T PA -100 -100 -5 3 60 -50


    OCR Scan     		2SB1157 2SB1158 2SB1159 2SB1160 2SB1161 2SB1162 2SB1163 2SB1176 2SD1747 2SB1177 SB-116 2sb1163 2SB1181F5 2SB1182F5 2sb174 2SB1157 2SB1158 2SB1159 2SB1160 2SB1161 PDF