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    2SB649 Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB649 Hitachi Semiconductor Silicon PNP Transistor Original PDF
    2SB649 Renesas Technology Silicon PNP Epitaxial Original PDF
    2SB649 Transys Electronics To-126c Plastic-encapsulated Transistors Original PDF
    2SB649 Unisonic Technologies BIPOLAR POWER GENERAL PURPOSE TRANSISTOR Original PDF
    2SB649 Weitron PNP Epitaxial Planar Transistors Original PDF
    2SB649 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB649 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB649 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB649 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB649 Unknown Transistor Replacements Scan PDF
    2SB649 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB649 Unknown Cross Reference Datasheet Scan PDF
    2SB649 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB649 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB649 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB649 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB649 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB649 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB649 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB649A Hitachi Semiconductor Silicon PNP Transistor Original PDF

    2SB649 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    QW-R204-005

    Abstract: No abstract text available
    Text: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


    Original     		2SD669/A 2SB649/A O-126 2SD669 2SD669A QW-R204-005 PDF

    2SB649

    Abstract: 669a 2SB649A
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION •With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity


    Original     		2SB649 2SB649A O-126 2SD669/669A -120/-160V 2SB649 -160V; 669a 2SB649A PDF

    2SD669

    Abstract: 2SD669A ALL 2SD669A DSA003644
    Text: 2SD669, 2SD669A Silicon NPN Epitaxial ADE-208-899 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SD669, 2SD669A ADE-208-899 2SB649/A O-126 2SD669 2SD669 2SD669A ALL 2SD669A DSA003644 PDF

    transistor 2sb649

    Abstract: transistor 160v 1.5a pnp 2SB649 2SD669
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB649 DESCRIPTION •High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD669


    Original     		2SB649 -120V 2SD669 -10mA -500mA; -50mA -150mA -160V; -500mA transistor 2sb649 transistor 160v 1.5a pnp 2SB649 2SD669 PDF

    transistor 649A

    Abstract: 649A transistor 2sb649 2SB649 2SB649A TO 126 FEATURES JIANGSU CHANGJIANG TO-126
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126 FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		O-126 2SB649/2SB649A 2SD669/A 2SB649 2SB649A -160V -10mA -150mA transistor 649A 649A transistor 2sb649 2SB649 2SB649A TO 126 FEATURES JIANGSU CHANGJIANG TO-126 PDF

    2SD669A

    Abstract: 2SD669 to-126 transistor transistor 2sd669 2DS669 pc123
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD669 2SD669A TO-126 TRANSISTOR NPN FEATURES Low frequency power amplifier complementary pair with 2SB649/A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		O-126 2SD669 2SD669A O-126 2SB649/A 150mA 2SD669A 2SD669 to-126 transistor transistor 2sd669 2DS669 pc123 PDF

    transistor 649A

    Abstract: 2SB649 2SB649A 649a
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		O-126C 2SB649/2SB649A 2SD669/A 2SB649 2SB649A -160V -10mA -150mA transistor 649A 2SB649 2SB649A 649a PDF

    2SA1015

    Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
    Text: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624


    OCR Scan     		2SB1037 2SB649A 2SB1186A 2SA1306A 2SB1186B 2SB548 2SB1314 2SA1783 2SA1015 2SA733 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


    Original     		2SD669/A 2SB649/A O-126C 2SD669 2SD669A 600mA, 150mA QW-R217-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2B649,2SB649A Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO -126 MOD I 1. Em itter 2. Collector 3. Base 2B649, 2SB649A Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol 2SB649 2SB649A


    OCR Scan     		2B649 2SB649A 2SD669/A 2B649, 2SB649 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		O-126 2SB649/2SB649A 2SD669/A 2SB649 2SB649A -160V -10mA -150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD669 2SD669A TO-126 TRANSISTOR NPN FEATURES Low Frequency Power Amplifier Complementary Pair with 2SB649/A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		O-126 2SD669 2SD669A O-126 2SB649/A PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 2SD669A TO-126C TRANSISTOR NPN FEATURES Low frequency power amplifier complementary pair with 2SB649/A 1. EMITTER 2. COLLECTOR 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		O-126C 2SD669 2SD669A O-126C 2SB649/A 150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SB649/A PNP SILICON TRANSISTOR BI POLAR POWER GEN ERAL PU RPOSE T RAN SI ST OR 1 1 SOT-89 SOT-223 ̈ APPLI CAT I ON S 1 * Low frequency power amplifier complementary pair with UTC 2SD669/A 1 TO-252 TO-92 1 1 TO-92NL TO-126 1 TO-126C


    Original     		2SB649/A OT-89 OT-223 2SD669/A O-252 O-92NL O-126 O-126C 2SB649xL-x-AA3-R 2SB649xG-x-AA3-R PDF

    transistor 2sb649

    Abstract: 2SB649A 2SB649
    Text: 2SB649/2SB649A 2SB649/2SB649A TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A Collector-base voltage V V(BR)CBO : -180 Operating and storage junction temperature range 2. COLLECTOR 3. BASE


    Original     		2SB649/2SB649A O-126C 2SB649 2SB649A -10mA, I-10mA, -160V, -150mA transistor 2sb649 2SB649A 2SB649 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor IC Transistors IC Transistor DIP SMDType Type Type DIP SMD Type Product specification 2SB649A Features Collector-Emitter Voltage :-160V Collector Current :-1.5A 1 Emitter 2 Collector 3 Base Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage


    Original     		2SB649A -160V -55to -10mA, -600mA -50mA -150mA -500mA 150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR „ APPLICATIONS 1 1 SOT-89 SOT-223 1 1 TO-92 * Low frequency power amplifier complementary pair with UTC 2SB649/A TO-92NL 1 1 TO-126 TO-126C 1 1 TO-251


    Original     		2SD669/A OT-89 OT-223 2SB649/A O-92NL O-126 O-126C O-251 O-252 2SD669L/2SD669AL PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


    Original     		2SD669/A 2SB649/A O-126 2SD669 2SD669A 600mA, 150mA QW-R204-005 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


    Original     		2SD669/A 2SB649/A 2SD669 2SD669A QW-R201-049 150mA 2SD669) 2SD669A) PDF

    2SB669

    Abstract: UTC pnp transistor 2sb649 2SB669A transistor 2sb669 2sb649a
    Text: UTC 2SB649 /A PNP EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


    Original     		2SB649 2SB669/A O-126 2SB649A QW-R204-006 2SB669 UTC pnp transistor 2SB669A transistor 2sb669 PDF

    2SD669

    Abstract: No abstract text available
    Text: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


    Original     		2SD669/A 2SB649/A O-126C 2SD669 2SD669A QW-R217-001 PDF

    2SB669

    Abstract: 2SB669A 2sb649 2sb649a
    Text: UTC 2SB649 /A PNP EPITAXIAL SILICON TRANSISTOR . BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


    Original     		2SB649 2SB669/A OT-89 2SB649A QW-R208-035 2SB669 2SB669A PDF

    2sb649

    Abstract: 2sb649a 2SB669
    Text: UTC 2SB649 /A PNP EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


    Original     		2SB649 2SB669/A 2SB649A QW-R201-048 2SB669 PDF

    2sd649

    Abstract: transistor 649A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		O-126C 2SB649/2SB649A 2SD669/A 2SB649 2SB649A -160V -10mA -150mA 2sd649 transistor 649A PDF