2SC3072 Search Results

2SC3072 Price and Stock

Filter by Manufacturer


Toshiba America Electronic Components 2SC3072-B(T6L1,NQ)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC3072-B(T6L1,NQ)		448			1 $1.26 10 $1.26 100 $0.63 1000 $0.504 10000 $0.504	Buy Now

2SC3072 Datasheets (35)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC3072	Kexin	Silicon NPN Epitaxial	Original	PDF
2SC3072	Toshiba	Silicon NPN Transistor	Original	PDF
2SC3072	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3072	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC3072	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SC3072	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SC3072	Unknown		Scan	PDF
2SC3072	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC3072	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC3072	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC3072	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC3072	Toshiba	Silicon NPN transistor for strobe flash applications and medium power amplifier applications	Scan	PDF
2SC3072	Toshiba	SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR	Scan	PDF
2SC3072(2-7B1A)	Toshiba	2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF

2SC3072(2-7B2A)	Toshiba	2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SC3072(2-7J1A)	Toshiba	2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SC3072A	Toshiba	2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SC3072A	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3072A	Toshiba	Silicon NPN Transistor	Scan	PDF
2SC3072-A(2-7B1A)	Toshiba	2SC3072 - TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF

2SC3072 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •	Original	PDF	2SC3072
C3072 Abstract: 2SC3072 c3072 npn Text: 2SC3072 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3072 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (最小) (VCE = 2 V, IC = 4 A)	Original	PDF	2SC3072 C3072 2SC3072 c3072 npn
C3072 Abstract: c3072 npn 2SC3072 Text: 2SC3072 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3072 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (最小) (VCE = 2 V, IC = 4 A)	Original	PDF	2SC3072 20070701-JA C3072 c3072 npn 2SC3072
2SC3072 Abstract: C3072 Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •	Original	PDF	2SC3072 2SC3072 C3072
c3072 Abstract: 2SC3072 c3072 npn Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •	Original	PDF	2SC3072 c3072 2SC3072 c3072 npn
c3072 Abstract: 2SC3072 c3072 npn Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) ·	Original	PDF	2SC3072 c3072 2SC3072 c3072 npn
c3072 Abstract: c3072 npn 2SC3072 Text: Transistors SMD Type Silicon NPN Epitaxial 2SC3072 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High DC current gain. +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1	Original	PDF	2SC3072 O-252 C3072 c3072 c3072 npn 2SC3072
Untitled Abstract: No abstract text available Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •	Original	PDF	2SC3072
c3072 npn Abstract: c3072 Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •	Original	PDF	2SC3072 c3072 npn c3072
2SC3072 Abstract: C3072 Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •	Original	PDF	2SC3072 2SC3072 C3072
alternator diode 1776 B Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)	Original	PDF	Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
ESM 740 Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.	Original	PDF	SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	PDF	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

Untitled Abstract: No abstract text available Text: 2SC3072 SILICON NPN EPITAXIAL T Y P E STROBO FLASH APPLICATIONS. Unit in iran MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain: hFE=140-~450 VCE=2V, IC=0.5A hFE=70(Min.) (VcE=2V, Ic =4A) . Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) (Ic=4A, Ib =0.1A)	OCR Scan	PDF	2SC3072 T11RAT10
2SC3072 Abstract: No abstract text available Text: TO SH IBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm STROBE FLASH APPLICATIONS (A) MEDIUM POWER AMPLIFIER APPLICATIONS 6.8MAX., 5 .2 1 0 .2 r- • • • I 'l P in 0.6M AX. - t f - High DC Current Gain : hpE = 140~450	OCR Scan	PDF	2SC3072 2SC3072
Untitled Abstract: No abstract text available Text: T O SH IB A 2SC3072 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 MEDIUM POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hpE —140~450 (Vç e = 2V, I ç = 0.5A) h p E -7 0 (Min.) (Vç e = 2V, I ç = 4A)	OCR Scan	PDF	2SC3072
2SC3072 Abstract: No abstract text available Text: TOSHIBA 2SC3072 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hpE = 140~450 (VCE = 2V, IC = 0.5A) hFE = 70 (Min.) (VCE = 2 V, IC = 4 A)	OCR Scan	PDF	2SC3072 2SC3072
transistor LT 5210 Abstract: No abstract text available Text: TOSHIBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm STROBE FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS 6.8M A X (A ) • High DC Current Gain : = 140~450 (VCE = 2 V, IC = 0.5 A) 0.6 + 0.15 hFE = 70 (Min.) (VCE = 2 V, IC = 4A )	OCR Scan	PDF	2SC3072 Voltag00 transistor LT 5210
MAX12001 Abstract: 2sc3072 Text: TO SH IBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm STROBE FLASH APPLICATIONS (A) MEDIUM POWER AMPLIFIER APPLICATIONS 6.8MAX., 5.210.2 r- • • P in 0.6MAX. - t f - High DC Current Gain : hpE = 140~450 (\Tn-n	OCR Scan	PDF	2SC3072 95MAX. 95IV1AX. MAX12001 2sc3072
2SC3072 Abstract: No abstract text available Text: 2SC3072 SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS. M ED IUM PO W ER AMPLIFIER APPLICATIONS. • High DC C urrent Gain : hpE = 140-450 (Vc e = 2V, I ç = 0.5A) hFE = 70 (Min.) ( V = 2V, I = 4A) Low Collector Saturation Voltage	OCR Scan	PDF	2SC3072 2SC3072
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hpg = 140~450 (Vc e = 2 V, IC = 0.5 A) hFE = 70 (Min.) (Vc e = 2 V, Ic = 4A)	OCR Scan	PDF	2SC3072
2SC3072 Abstract: No abstract text available Text: TO SH IBA 2SC3072 T O S H IB A T R A N S IS T O R SIL IC O N N P N E P IT A X IA L T Y PE PCT PR O C ESS 2SC3072 S T R O B E FLASH A P P L IC A T IO N S M E D IU M P O W E R A M P L IF IE R A P P L IC A T IO N S • H igh DC Current G ain : h p g = 1 4 0 ~ 4 5 0	OCR Scan	PDF	2SC3072 101--kH- 55J35S 5K55S 2SC3072
RTIP144C Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.	OCR Scan	PDF	2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

Privacy Settings

2SC3072 Search Results

2SC3072 Price and Stock

Toshiba America Electronic Components 2SC3072-B(T6L1,NQ)

2SC3072 Datasheets (35)

2SC3072 Datasheets Context Search

Untitled

C3072

C3072

2SC3072

c3072

c3072

c3072

Untitled

c3072 npn

2SC3072

alternator diode 1776 B

GT30F131

ESM 740

IGBT GT30F124

Untitled

2SC3072

Untitled

2SC3072

transistor LT 5210

MAX12001

2SC3072

Untitled

2SC3072

RTIP144C