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    2SC4633 Search Results

    2SC4633 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC4633 Sanyo Semiconductor High-Voltage Transistors Original PDF
    2SC4633 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4633 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4633 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4633 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC4633LS Sanyo Semiconductor NPN Triple Diffused Planar Silicon Transistor Original PDF
    2SC4633LS Sanyo Semiconductor Transistors for Very High Definition CRT Display Horizontal Deflection Output Use Scan PDF
    2SC4633LS Sanyo Semiconductor Transistors for Very High Definition CRT Display Scan PDF
    2SC4633LS Sanyo Semiconductor Transistors for Very High Definition CRT Display Scan PDF

    2SC4633 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    37021

    Abstract: 11599HA 2SC4633 IC 37021
    Text: Ordering number:EN3702A NPN Triple Diffused Planar Silicon Transistor 2SC4633 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=1200V . · Small Cob (typical Cob=2.0pF). · Full-isolation package.


    Original
    PDF EN3702A 2SC4633 200V/30mA 2079B 2SC4633] O-220FI 37021 11599HA 2SC4633 IC 37021

    IC 37021

    Abstract: 2SC4633LS ITR07340 ITR07341 ITR07342 ITR07343 ITR07344 37021 ta3427 2079D
    Text: Ordering number : ENN3702B 2SC4633LS NPN Triple Diffused Planar Silicon Transistor 2SC4633LS 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=1200V . Small Cob(typical Cob=2.0pF).


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    PDF ENN3702B 2SC4633LS 2079D 2SC4633LS] O-220FI IC 37021 2SC4633LS ITR07340 ITR07341 ITR07342 ITR07343 ITR07344 37021 ta3427 2079D

    Untitled

    Abstract: No abstract text available
    Text: 2SC4633LS Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)1.2k V(BR)CBO (V)1.5k I(C) Max. (A)30m Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    PDF 2SC4633LS

    2sk3436

    Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
    Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis


    Original
    PDF TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744

    2sk3436

    Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
    Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。


    Original
    PDF 40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970

    TT2140

    Abstract: transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140
    Text: Ordering number: EP106A Discrete Devices for Video Equipment '04-08 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage


    Original
    PDF EP106A O-220FI5H TT2140 transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140

    IC 37021

    Abstract: 2SC4633 37021 EN3702A
    Text: Ordering num ber:EN3702A _ 2SC4633 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications F eatu re s • High breakdown voltage Vceo min = 1200V . •Small Cob (typical Cob = 2.0pF). ■Full-isolation package.


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    PDF EN3702A 2SC4633 IC 37021 37021

    IC 37021

    Abstract: 2sc4633
    Text: I O rd e rin g num ber:E N 3702A _ SAiYO i 2SC4633 NPN Triple Diffused Planar Silicon Transistor 1200V/30mA High-Voltage Amp, High-Voltage Switching Applications Feature^ • High breakdown voltage Vceo min = 1200V . • Small Cob (typical Gob= 2.0pF).


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    PDF 2SC4633 200V/30mA 100mA 2079B O-220FKLS) 80296YK TA-0465, AX-7506 IC 37021 2sc4633

    2SC3953

    Abstract: TRANSISTOR T0220 2SC3597
    Text: Horizontal deflection output composite transistor Absolute maximum ratings _ . I Package . Application T IT Vcbo Vcbo nn (V) HPA72R* T03PBL °"!fk (wilh high-speed damper diode) HPA100R T03PBL “ H PA.M T03PBL * “ “ “ Ä T Vceo Vceo lc >c Electrical characteristics (T, = 25 deg. C)


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    PDF HPA72R* T03PBL HPA100R 2SC4256 2SC4257 2SC3675 2SC3676 2SC4450 2SC3953 TRANSISTOR T0220 2SC3597

    2SC4630LS

    Abstract: 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML
    Text: SAflYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 afci D y n a m i cs F ' o c s t j i s U s e ( N o p i c t u r e e v e r o u t of f o c u s w i t h b e t t e r f o c u s c h a r a c t e r i s t i c s )


    OCR Scan
    PDF T0-220FI T0-220. diffus-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} 2SC4630LS 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML

    2sc4710

    Abstract: No abstract text available
    Text: S4ÜV0 T r a n s i s t o r s for V e r y H i g h - D e f i n i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t Use 3 otc D y n a m i c s F o c u s U s e (No picture ever out of focus with better focus c h a r a c t e r i s t i c s )


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    PDF Ratings/Ta-25t 2SC4572 2SC4578 2SC4579 T0-220MFs MT950112TR 2sc4710

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SC4614

    Abstract: 2SC4636 2SC4642 2SC4626 2SC4627 2SC4628 2SC4629 2SC4630 2SC4631 2SC4632
    Text: - 210 - *0 31 2SC4626 2SC4627 2SC4628 2SC4629 M M Ta=25'C, *E¡]/ÍTc=25cC ^ EB tt S n~l & Vc b o Vc e o (V) (V) Crne) T (A) Pc Pc* IcBO (W) (W) (juA) 0.03 0.125 30 20 20 0.015 0.125 20 20 0. 02 15 9 föT HF A 30 Hi Hi HF A HF A UHFAHF A (max) (rain) Vc b


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    PDF 2SC4626 2SC4627 2SC4628 2SC4629 2SC4630 2SC4631 2SC4632 2SC4633 2SC4650 2SC4655 2SC4614 2SC4636 2SC4642

    2SC3997

    Abstract: HPA150R 2SC4636 2SC3676 2SC4450 TR 2SC3997 2SC3894 2SC3895 DD52RC DD54RC
    Text: b3 E D • 7 cl t17Q7b DG12M3D QTM » T S A J _ m_ ^ S A f t Y O Transistors for Very High-Definition CRT Display H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 2 & Horizontal Output Use with High-speed Damper Diode (Adoption of MBIT Process)(Ta=25t)


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    PDF DG12M3D T0220FI DD54RCLS T0-220 1--f-14 DD52RC MT930707TR 2SC3997 HPA150R 2SC4636 2SC3676 2SC4450 TR 2SC3997 2SC3894 2SC3895 DD54RC

    Untitled

    Abstract: No abstract text available
    Text: SA/iYO T0-220FI LS (Ful 1 Isolation) Outline Series S a n y o ’ s new o u t l i n e T 0 - 2 2 0 F I ( F u l 1 i s o l a t i o n a j c .Dynamic: focus : perfect isolation t y p e ) h a s a wi de v a r i e t y o f p r o d u c t s . transi stoi-s Be i n g out of


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    PDF T0-220FI MT930622TR

    electron gun CRT

    Abstract: dyna image 2SC3676 TRANSISTOR T0220 CRT electron gun 2SC3675 2SC4256 2SC4257 2SC471 2SC4451
    Text: Transistors for Very High-Definition CRT Display H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 ale D yr'ia.m i cs F o o u s UseNo picture ever out of focus with better focus characteristics High reliability and high breakdown voltage (HVP technology) make it possible to make the grid voltage higher and


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    PDF T0-220FI T0-220. T0220FI MT931223TR electron gun CRT dyna image 2SC3676 TRANSISTOR T0220 CRT electron gun 2SC3675 2SC4256 2SC4257 2SC471 2SC4451

    horizontal section in crt television

    Abstract: Electron Tubes crt DEPLETION electron gun CRT
    Text: ^ 5 1?' 1* 5 1 ° .- J È 1 ° 7i -Q 33-C& ° w 30^ ¥ . • V No p ic Ì & ^ ^ g ig vb |ii.’Qf fo c u s ,';! arriicFocus Transistor M § fe 3 i ; Dynamic focuè' transistor^chip "1; transistors, with Very high withstand, voltage, by HVP process " - . •’


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SA0YO T 0 - 2 2 0 F I LS ( F u l 1 Isolation) Sanyo's ne w o u t l i n e T0-220FI(Ful 1 is o la tio n o|c Dynami cs These p r o d u c t s technology. are f ocus fabricated over size the electron This of an e l e c t r o n CRT s c r e e n by S a n y o ’ s o r i g i n a l


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    PDF T0-220FI /Ta-25 MT941226TR

    2SC4633

    Abstract: No abstract text available
    Text: Ultrahigh-resolution Display Video Output Transistors FBET Absoluto maximum ratings Type No. Packag* Ha* Bad iteli characteristics (Ta •25 TC) ICBO mut VCB Applications VCBO Veto VEBO 1C cw (V) (V) (mA) PC (W) db ICBOmax O.A) bFESVCE ■1C Vca (V) hFE


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    PDF T0126 T0126ML OI26ML T0I26M 2SC4633