2sc4939
Abstract: 690 lc
Text: K7 > 9 s 2SC4939 £ /Transistors 2SC4939 I \ ¿ $ * y 7 J \ ' 7 l s - Í - M N P N v lJ ^ > b 7 > y Z $ Epitaxial Planar NPN Silicon Transistor "J $ ’ > • « ft >^ffl/High Speed Switching • W B \fii;ll/'D im ensions U nit: mm 1) tfS0.3us, (¡o— 6A)
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2SC4939
30MHz
2sc4939
690 lc
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Untitled
Abstract: No abstract text available
Text: 2SC4939E Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)12 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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2SC4939E
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transistor C5001
Abstract: C5001 transistor TRANSISTOR MARKING YB transistor marking C5001 c5001 C5001 R marking code Yb Transistor 2SC5001F5 2sc4939 CC OWV W
Text: 2SC4939 Transistor, NPN Features • available in PSD package • high-speed switching, typically, tf < 0.3 |xs for lc = 6A • low collector saturation voltage, typically VcE sat ^0-3 Vfor lc/lB = 6A/0.3A • wide safe operating area (SOA) Applications • high speed dc-dc converter
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2SC4939
2SC5001F5
transistor C5001
C5001 transistor
TRANSISTOR MARKING YB
transistor marking C5001
c5001
C5001 R
marking code Yb Transistor
2SC5001F5
2sc4939
CC OWV W
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Untitled
Abstract: No abstract text available
Text: h7 > V 2SC4939 $ / I ransistors 2SC 4939 H * y U = l> h -7 Epitaxial Planar NPN Silicon Transistor *y f-> ? ffl/H ig h Speed Switching • fl-J f^ ä ^ /D im e n s io n s (Unit : mm) 1) tf^ 0 .3 n s , (!c = 6 A ) 2) V c e (sat)— 0.3 V (lc /lB = 6 A /0 .3 A )
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2SC4939
50/iS
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Untitled
Abstract: No abstract text available
Text: 2SC4939D Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)12 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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2SC4939D
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Untitled
Abstract: No abstract text available
Text: 2SC4939 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)12 Absolute Max. Power Diss. (W)35.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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2SC4939
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2SC4939
Abstract: No abstract text available
Text: 2SC4939 Transistor, NPN Features Dimensions U nits: mm • available in P S D package • high-speed switching, typically, tf < 0.3 |xs for lc = 6 A • low collector saturation voltage, typically V CE/sat) < 0.3 V for lC/lB = 6 A/0.3 A • wide safe operating area (SOA)
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2SC4939
2SC4939
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Untitled
Abstract: No abstract text available
Text: 2SC4939F Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)12 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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2SC4939F
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Untitled
Abstract: No abstract text available
Text: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390
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Ta-25
2SB1132
2SA1900
2SB1184
2SB1182
2SB1181
OT-89)
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KY 719
Abstract: 122JK TB163TK TB143TK
Text: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75
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2SK1973F5
2SK2041
2SK2042
2SK2094F5
2SK2103
2SA1036K
2SA1037AK
2SA1037AKLN
2SA1455K
RU101
KY 719
122JK
TB163TK
TB143TK
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TA143E
Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Text: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0
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2SK1973F5
2SK2041
2SK2042
2SK2094F5
2SK2103
RU101
RU201
RU901
TA143E
2SD 647 transistor
TRANSISTOR 2SC 733
C4672
144EK
113ZE
Transistor 2SA 2SB 2SC 2SD
114EU
TC114EKA
TA123JE
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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JIS C7021 A-11
Abstract: No abstract text available
Text: Transistors Quality assurance and reliability Quality assurance and reliability •Q ua lity Assurance Measures JIS Japan Industrial Standards defines reliability to be “the ability for an item to perform a required func tion under given conditions for a specified time”. This
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IMH10
Abstract: No abstract text available
Text: Index Index 2SA1036K 69 2SA1037AK 73 2SA1514K 77 2SA1576A 73 2SA1577 69 2SA1579 77 2SA1727F5 81 2SA1759 85 2SA1774 73 2SA1797 89 2SA1807F5 92 2SA1834F5 96 2SA1862F5 100 2SA1870 104 2SA1900 106 2SC4617 169 2SC4649 160 2SC4672 201 2SC4713K 204 2SC4774 204 2SC4938 209
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2SA1036K
2SA1037AK
2SA1514K
2SA1576A
2SA1577
2SA1579
2SA1727F5
2SA1759
2SA1774
2SA1797
IMH10
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transistor b1184
Abstract: B1474 C5072 C4938 b1184 transistor 3722K c4998 2SB1051 K2306 2sc4937
Text: Transistor Quick reference I Leaded ^ F ’ i i I: Package -Application Application * ^ * VrFR iV EM 3 | UM T | SM T *VnSR 2S C 408 1LN 40 Low Noise | CPT F5 | F3 > / 2S A 1037 A K L N E ) \ 2 S C 2 4 1 2KLNÎE1 2S C 2412K LN ÌR S Ì /2 S A 1 4 5 5 K
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2SA1037AKLN
V2SC41
2412K
3722K
4642K
A1037AK
2411K
B1197K
2SA1727
transistor b1184
B1474
C5072
C4938
b1184 transistor
c4998
2SB1051
K2306
2sc4937
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transistor 390
Abstract: 2SD1834
Text: Bipolar transistors-2SA series MPT3, CPT F5, and PSD summary Table 2 Bipolar transistor MPT3, CPT F5, and PSD summary Sheet 1 of 2 Package Appli cation VCEO •c max * V CES * V CER (A) (A) 2SB1132 -32 -1 -2 2★ 2SA1900 -50 -1 -2 2★ -50 -3 -4.5 -32
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2SB1132
2SA1900
2SB1184
2SB1188
2SB1181
2SC4132
2SD1664
2SC5053
2SD1760
2SD1766
transistor 390
2SD1834
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2SC4672 equivalent
Abstract: 2SC2412KX2 2SC1514K equivalent 2sa1455k SO68 2SB1181F5 equivalent csc 354 2SB1386 equivalent FMC3A FMW5
Text: h /T ra n sisto rs /\°'y JT — v ^ J ^ fp p — f l ü / L i s t of Products for Each Package • EM3 Extreme M ini-m old 3pir Part No. Application V c e o (V) IC(A) iC Max.(A) PC(W) fj(M H z) Cob(pF) Page h FE lc(mA) V c e (V) 2SC4617 Pre Amp 50 0 15
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2SC4617
2SC4618
2SC4619
2SC4649
2SA1576A
2SA1577
2SA1579
2SA1808
2SC4081
2SC4082
2SC4672 equivalent
2SC2412KX2
2SC1514K
equivalent 2sa1455k
SO68
2SB1181F5 equivalent
csc 354
2SB1386 equivalent
FMC3A
FMW5
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Untitled
Abstract: No abstract text available
Text: RONfTI MPT • CPT F5 • PSD Application MPT CPT FS -3 2 -1 - 2* - 8 2 -3 9 0 POR -3 -1 0 0 - -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - _ 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 8 2 -3 9 0 P Q R -3 -5 0 0 - - -8 0 -0 .7 - 2*
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2SB1132
2SA1900
--200k
OT-89)
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JIS C7021 B-11
Abstract: 2SA1576A 2SA1774 2SC2412K 2SC4081 2SC4617 C7021 H63A
Text: Quality assurance and reliability Transistors Quality assurance and reliability !Quality Assurance Measures JIS Japan Industrial Standards defines reliability to be “the ability for an item to perform a required function under given conditions for a specified time”. This can be
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1000h
JIS C7021 B-11
2SA1576A
2SA1774
2SC2412K
2SC4081
2SC4617
C7021
H63A
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Untitled
Abstract: No abstract text available
Text: MPT • CPT F5 • PSD Package Application MPT CPT F5 PSD VcEO V *Vcís* , Vcer Part No. (A) Pc (W) Ic Max. (A) MPT (Ta=25'C ) hFE m (Tc=25'c) Vce (V) Ic (mA) Circuit 2SB1132 - - -3 2 -1 - 2* - 82—390 -3 -1 0 0 - w an ’ 2SA1900 - - -5 0 -1 -2 2* - 82—390
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2SB1132
2SA1900
2SB1188
2SB1189
2SB1260
2SC4132
2SD1664
2SC5053
2SD1766
2SD1767
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