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    2SC5125 Search Results

    2SC5125 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5125 Mitsubishi NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC5125 Mitsubishi MITSUBISHI RF POWER TRANSISTOR Scan PDF

    2SC5125 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 PDF

    2SC5125

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in VHF band. OUTLINE DRAWING Dimension in mm Rl FEATURES • High power output and high gain : Po § BOW, Gpe S 7.2dB,


    OCR Scan
    2SC5125 2SC5125 175MHz, 175MHz PDF

    2SC5125

    Abstract: air variable capacitor transistor 5d mica capacitor metal clad mica capacitor T-40E
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial. planar type transistor OUTLINE DRAWING Dimension in mm specifically designed for high power amplifiers in VHF band. R1 FEATURES • High power output and high gain : Po 2 80W, Gpe S 7.2dB,


    OCR Scan
    2SC5125 2SC5125 175MHz, Tc-25^ 175MHz air variable capacitor transistor 5d mica capacitor metal clad mica capacitor T-40E PDF

    2SC5125

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in VHF band. OUTLINE DRAWING Dimension in mm Rl FEATURES • High power output and high gain : Po § BOW, Gpe S 7.2dB,


    OCR Scan
    2SC5125 2SC5125 175MHz, 175MHz PDF

    2sc2538

    Abstract: hpa b 110 2SC2S39 2SC5125 2sc4624 2SC2094
    Text: 150MHz B and 13.5V S eries fo r M obile Radios <Tc = 25*C> Max. ratings Application 2SC20S3 HPA S ,NPN,EP VM ° 40 2SC1970 HPA S ,NPN,EP 40 2SC730 3K* V Structure •' - 0.3 4 0.6 & Rttv-c 5 + 150 25 fc /w 0.61 + 135 183 w 4 Pç W) Ve (min) {%) {«ax) i* A )


    OCR Scan
    150MHz 2SC20S3 2SC1970 2SC730 2SC1947 2SC197Í 2SC2237 2SC1972 2SC2094 2SC1729 2sc2538 hpa b 110 2SC2S39 2SC5125 2sc4624 PDF