2SC5177 Search Results

2SC5177 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC5177	NEC	NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION	Original	PDF
2SC5177	NEC	Semiconductor Selection Guide	Original	PDF
2SC5177-T1	NEC	High fT, high gain transistor	Original	PDF
2SC5177-T2	NEC	High fT, high gain transistor	Original	PDF

2SC5177 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
nec 2651 Abstract: hfe 4049 2454 transistor 2SC5177 2SC5177-T1 2SC5177-T2 285-2 MAG IC t84 marking of IC 4047 8 pin ic 3773 Text: DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Units: mm • Low Current Consumption and High Gain \|S21e\|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz	Original	PDF	2SC5177 2SC5177-T2 nec 2651 hfe 4049 2454 transistor 2SC5177 2SC5177-T1 2SC5177-T2 285-2 MAG IC t84 marking of IC 4047 8 pin ic 3773
2SC5179 Abstract: 2SC5180 2SC5181 NE686 NE68618 NE68619 NE68630 NE68633 S21E transistor nec cel Text: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB @ 2 V, 7 mA, 2 GHz \|S21E\|2 = 11 dB @ 1 V, 5 mA, 2 GHz	Original	PDF	NE686 8639R NE686 2SC5179 2SC5180 2SC5181 NE68618 NE68619 NE68630 NE68633 S21E transistor nec cel
smd code book Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ	Original	PDF	OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
2SK2396 Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711 Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××）品名 µPC8119T アプリケーション移動通信電源電圧電流周波数	Original	PDF	X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
uPD16305 Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943 Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.	Original	PDF	PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
nf025 Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408 Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920	Original	PDF	X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
2SC5181 Abstract: 2SC5179 2SC5180 NE686 NE68618 NE68619 NE68630 S21E UPA807T 73300 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB @ 2 V, 7 mA, 2 GHz \|S21E\|2 = 11 dB @ 1 V, 5 mA, 2 GHz	Original	PDF	NE686 NE686 NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 NE68639-T1 NE68639R-T1 24-Hour 2SC5181 2SC5179 2SC5180 NE68618 NE68619 NE68630 S21E UPA807T 73300
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original	PDF
marking 269-3 sot23 Abstract: NE68618-T1-A IC ua 741 T 0599 Text: SILICON TRANSISTOR NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB @ 2 V, 7 mA, 2 GHz \|S21E\|2 = 11 dB @ 1 V, 5 mA, 2 GHz	Original	PDF	NE686 8639R NE68618-T1-A NE68619-T1-A NE68630-T1 NE68633-T1 NE68639-T1 NE68639R-T1 marking 269-3 sot23 IC ua 741 T 0599
MMBD2104 Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932 Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a	Original	PDF	BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
MMBD2103 Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.	Original	PDF	BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
SMD Codes Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101 Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.	Original	PDF	BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
2SC5743 Abstract: 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC4091 2SC5937 2sc5747 2sc2570 Text: 高周波半導体デバイス Microwave Semiconductor Devices W-CDMA用IC（ICs for W-CDMA）・W-CDMA用にシリコン／GaAs MMICを開発中・小型ミニモールドやリードレスQFNなど実装面積の削減に有効なパッケージに搭載	Original	PDF	PC8190/8191KRX-IF PC8194/8195KRX-IF PG2124TH 10TSSOP 10-pin FAX044435-9608 2SC5743 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC4091 2SC5937 2sc5747 2sc2570
uPD72002-11 Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508 Text: 品名別検索検索ツール 1. ツールバーのアイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して，検索 F をクリックしてください。	Original	PDF	PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508

UAA 1006 Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71 Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH	Original	PDF	D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
20323 Abstract: marking 269-3 sot23 S21E 2SC5179 2SC5180 2SC5181 NE686 NE68618 NE68619 NE68630 Text: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB @ 2 V, 7 mA, 2 GHz \|S21E\|2 = 11 dB @ 1 V, 5 mA, 2 GHz	Original	PDF	NE686 8639R NE686 20323 marking 269-3 sot23 S21E 2SC5179 2SC5180 2SC5181 NE68618 NE68619 NE68630
marking 269-3 sot23 Abstract: NE68618 SOT-143 MARKING 557 2SC5179 2SC5180 2SC5181 NE686 NE68619 NE68630 NE68633 Text: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB @ 2 V, 7 mA, 2 GHz \|S21E\|2 = 11 dB @ 1 V, 5 mA, 2 GHz	Original	PDF	NE686 NE686 NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 NE68639-T1 NE68639R-T1 24-Hour marking 269-3 sot23 NE68618 SOT-143 MARKING 557 2SC5179 2SC5180 2SC5181 NE68619 NE68630 NE68633
free transistor equivalent book 2sc Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	PDF	X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
transistor NEC D 587 Abstract: 2SC5177 2SC5177-T1 2SC5177-T2 tc2474 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
ap 4606 Abstract: nec 2651 ic CD 4047 8 pin ic 3773 Text: DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Current Consum ption and High Gain PAC KAG E DIMENSIONS Units: mm \|Szie\|2 = 9.0 dB TYP. @ V ce = 2 V, Ic = 7 mA, f = 2 GHz	OCR Scan	PDF	2SC5177 SC-59 2SC5177-T1 2SC5177-T2 ap 4606 nec 2651 ic CD 4047 8 pin ic 3773
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • PACKAGE DIMENSIONS Low C urrent Consum ption and High Gain Units: mm \|S2ie\|2 = 9.0 dB T Y P . @ V ce = 2 V, Ic = 7 mA, f = 2 GHz	OCR Scan	PDF	2SC5177 SC-59 2SC5177-T1 2SC5177-T2
PJ 0349 Abstract: CD 888 CB pj 0266 iv PJ 0399 pj 1126 1V nt 9989 pj 1126 SIC SOT343 IC HS 8108 pj 0159 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES HIGH GAIN BANDW IDTH PRO DUCT: fT o f 15 G H z LOW VO LTAG E/LO W CU R R EN T OPERATION HIGH INSERTION POW ER GAIN: \|S 21 E\|2 = 12 dB @ 2 V , 7 m A , 2 G H z \|S 2 1 E \|2 = 11 d B @ 1 V, 5 mA, 2 G H z	OCR Scan	PDF	NE686 OT-143) NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 NE68639-T1 NE68639R-T1 PJ 0349 CD 888 CB pj 0266 iv PJ 0399 pj 1126 1V nt 9989 pj 1126 SIC SOT343 IC HS 8108 pj 0159
cd 1691 cp Abstract: cp 8888 sj 6344 cP8888 nt 9989 1691 AI bt 67600 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB @ 2 V, 7 mA, 2 GHz \|S21E\|Z = 11 dB @ 1 V, 5 mA, 2 GHz	OCR Scan	PDF	NE686 OT-143) NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 NE68639-T1 cd 1691 cp cp 8888 sj 6344 cP8888 nt 9989 1691 AI bt 67600
ne666 Abstract: 21421 Series ic 74600 NE686 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fTof 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21EI2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 = 11 dB @ 1 V, 5 mA, 2 GHz	OCR Scan	PDF	IS21EI2 NE686 OT-143) NE68618-T1 NE68619-T1 NE68630-T1 ne666 21421 Series ic 74600

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2SC5177 Search Results

2SC5177 Datasheets (4)

2SC5177 Datasheets Context Search

nec 2651

2SC5179

smd code book

2SK2396

uPD16305

nf025

2SC5181

2SK2500

marking 269-3 sot23

MMBD2104

MMBD2103

SMD Codes

2SC5743

uPD72002-11

UAA 1006

20323

marking 269-3 sot23

free transistor equivalent book 2sc

transistor NEC D 587

ap 4606

Untitled

PJ 0349

cd 1691 cp

ne666