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    2SC532 Search Results

    2SC532 Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC532 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC532 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC532 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC532 Unknown Cross Reference Datasheet Scan PDF
    2SC532 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC532 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC532 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC532 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC532 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC5320 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5320 Unknown NPN Transistor Scan PDF
    2SC5320 Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    2SC5320 Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    2SC5321 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5321 Unknown NPN Transistor Scan PDF
    2SC5321 Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    2SC5321 Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    2SC5322 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5322 Unknown NPN Transistor Scan PDF
    2SC5322 Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF

    2SC532 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5322

    Abstract: No abstract text available
    Text: 2SC5322 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5322 ○ VHF~UHF 低雑音増幅用 単位: mm • 雑音特性が優れています。 : NF = 1.4dB f = 2 GHz • 高利得です。 : |S21e|2 = 10dB (f = 2 GHz) 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SC5322 2SC5322

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5322FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : |S2i e|2 = 10 dB (f = 2 GHz) 1.2 ±0 .0 5 0.8 ± 0.05


    OCR Scan     		PDF 2SC5322FT

    VHF-UHF Band Low Noise Amplifier

    Abstract: 2SC5322
    Text: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain : Ga = 10dB (f=2GHz)


    OCR Scan     		PDF 2SC5322 16GHz VHF-UHF Band Low Noise Amplifier 2SC5322

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : |S2le|2= 12dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC5324

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE mm v mm V H F- U H F BAND LOW NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure High Gain : N F = 1 .4 d B f= 2 G H z : |S2 1 e l2~ 1 2 d B ( f — 2 G H z ) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5324

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2l e|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5320 16GHz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5323 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain :NF = 1.4dB f=2GHz : Ga = 12dB (f = 2GHz) + 0.2 s 2 .9 - 0.3 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5323

    2SC5321

    Abstract: VHF-UHF Band Low Noise Amplifier
    Text: 2SC5321 TOSHIBA 2SC5321 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : |S2le|2 = 10 dB (f = 2 GHz) 2.1 ¿ 0.1 1.25Ì0 .1


    OCR Scan     		PDF 2SC5321 SC-70 2SC5321 VHF-UHF Band Low Noise Amplifier

    2SC5323

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5323 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 : NF = 1.4 dB f = 2 GHz : Ga = 12 dB (f = 2 GHz) 2 .9 -0 .3 -e MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5323 2SC5323

    2SC5324

    Abstract: No abstract text available
    Text: T O S H IB A 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4 dB f = 2 GHz : |S21el2 = 12 dB (f = 2 GHz) 2.1 ± 0.1 1.25 ± 0.1


    OCR Scan     		PDF 2SC5324 2SC5324

    2SC5321

    Abstract: No abstract text available
    Text: 2SC5321 TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • • Low Noise Figure High Gain NF = 1.4dB (f = 2GHz) |S2l e|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5321 16GHz SC-70 006igns, 2SC5321

    2SC5322

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r , i 0.8 ± 0 . 1, Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain


    OCR Scan     		PDF 2SC5322 16GHz 2SC5322

    2SC5322

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.6 ± 0.2 Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : Ga = 10 dB (f = 2 GHz) ,0.8 ± 0.1,


    OCR Scan     		PDF 2SC5322 2SC5322

    2SC5320

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series • • + 0.5 2 .5 -0 .3 Low Noise Figure : NF = 1.4 dB (f = 2 GHz) High Gain


    OCR Scan     		PDF 2SC5320 2SC5320

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5321 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC532 1 U nit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIONS CHIP : f T = 16GHz series • • Low Noise Figure High Gain 2.1 ± 0.1 NF = 1.4dB (f = 2GHz) |S21eP = 10dB (f=2GHz)


    OCR Scan     		PDF 2SC5321 2SC532 16GHz S21eP

    2SC5321

    Abstract: bh marking
    Text: 2SC5321 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2le|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5321 16GHz SC-70 2SC5321 bh marking

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • ,0.8 ± 0 . 1, r— r - i Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain


    OCR Scan     		PDF 2SC5322 16GHz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5323 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 :NF = 1.4dB f=2GHz : Ga = 12dB (f = 2GHz) 2 .9 -0 .3 -e MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5323

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5323 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 SC 5 3 2 3 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 : N F= 1.4dB f=2GHz : Ga - 12dB (f = 2GHz) 2 .9 -0 .3 11 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5323

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5322 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS CHIP : f T = 16GHz series 1.6 ± 0.2 0.8 ± 0.1 • Low Noise Figure : NF = 1.4dB (f=2GHz) • High Gain l*- ^


    OCR Scan     		PDF 2SC5322 16GHz

    2SC5321

    Abstract: No abstract text available
    Text: 2SC5321 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2l e|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5321 16GHz 2SC5321

    B F2g

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5321 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE i <;r >5 3 1 1 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :N F = 1 .4 d B (f=2GHz) High Gain : |S2 l e|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5321 16GHz S21elease B F2g

    transistor P3d

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 SC 5 3 2 Q VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :N F = 1 .4 d B (f=2GHz) High Gain : |S2 l e|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5320 16GHz transistor P3d

    2SC5323

    Abstract: VHF-UHF Band Low Noise Amplifier toshiba 2-3J1C
    Text: TOSHIBA TENTATIVE 2SC5323 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 2.9-0.3 :NF = 1.4dB f=2GHz : Ga = 12dB (f = 2GHz) -e M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5323 2SC5323 VHF-UHF Band Low Noise Amplifier toshiba 2-3J1C