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Toshiba America Electronic Components 2SC5359-O(Q) TRANS NPN 230V 15A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC5359-O(Q)	Bulk	284		1	1 $4.3 10 $2.837 100 $4.3 1000 $1.55625 10000 $1.55625	Buy Now
Avnet Americas	2SC5359-O(Q)	Tray		20 Weeks	100	1 - 10 - 100 $1.90485 1000 $1.68075 10000 $1.68075	Buy Now
Mouser Electronics	2SC5359-O(Q)		73			1 $4.09 10 $2.74 100 $1.94 1000 $1.55 10000 $1.55	Buy Now
EBV Elektronik	2SC5359-O(Q)			21 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EVVO Semiconductor 2SC5359 TRANS NPN 230V 15A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC5359	Tube	200		1	1 $3.96 10 $2.741 100 $3.96 1000 $1.6875 10000 $1.6875	Buy Now
Toshiba America Electronic Components 2SC5359-R(Q) Trans GP BJT NPN 230V 15A 3-Pin(3+Tab) TO-3PL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SC5359-R(Q)		19		19	1 - 10 - 100 $4.1449 1000 $4.1449 10000 $4.1449	Buy Now
	2SC5359-R(Q)		10		10	1 - 10 $7.6336 100 $7.6336 1000 $7.6336 10000 $7.6336	Buy Now

2SC5359 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC5359	Toshiba	High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-3P(L); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: output(120W); Part Number: 2SA1987	Original	PDF
2SC5359	Unknown		Scan	PDF
2SC5359	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC5359	Toshiba	Silicon NPN triple diffused type transistor for power amplifier applications	Scan	PDF
2SC5359	Toshiba	Silicon NPN Triple Diffused Type Transistor	Scan	PDF
2SC5359-O	Toshiba	2SC5359 - TRANSISTOR 15 A, 230 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power	Original	PDF
2SC5359-O(Q)	Toshiba	2SC5359 - TRANSISTOR NPN 230V 15A TO-3	Original	PDF
2SC5359-R	Toshiba	2SC5359 - TRANSISTOR 15 A, 230 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power	Original	PDF

2SC5359 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SA1987 2SC5359 Abstract: 2SA1987 100W AUDIO ic AMPLIFIER 2SC5359 Text: JMnic Product Specification 2SA1987 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SC5359 ・High collector voltage APPLICATIONS ・Power amplifier applications ・Recommended for 100W high fidelity audio frequency amplifier output stage	Original	PDF	2SA1987 2SC5359 -230V; 2SA1987 2SC5359 2SA1987 100W AUDIO ic AMPLIFIER 2SC5359
2SA1987 2SC5359 Abstract: 2SC5359 2SA1987 100W POWER AMPLIFIER 100w npn Text: SavantIC Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage	Original	PDF	2SC5359 2SA1987 2SA1987 2SC5359 2SC5359 2SA1987 100W POWER AMPLIFIER 100w npn
2sa1987 transistor equivalent Abstract: transistor 2SC5359 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2SA1987 2SC5359 2SA1987 power transistor audio amplifier 100w Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1987 DESCRIPTION •High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·Complement to Type 2SC5359 APPLICATIONS	Original	PDF	2SA1987 -230V 2SC5359 -230V 2sa1987 transistor equivalent transistor 2SC5359 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2SA1987 2SC5359 2SA1987 power transistor audio amplifier 100w
Untitled Abstract: No abstract text available Text: 2SC5359 東芝トランジスタシリコンNPN三重拡散形 2SC5359 ○ 電力増幅用単位: mm • 高耐圧です。: VCEO = 230 V • 2SA1987 とコンプリメンタリになります。 • 100 W ハイファイオーディオアンプ出力段に最適です。	Original	PDF	2SC5359 2SA1987
100-W Abstract: 2-21F1A 2SA1987 2SC5359 Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.	Original	PDF	2SA1987 2SC5359 100-W 2-21F1A 2SA1987 2SC5359
transistor 2SC5359 Abstract: 2SC5359 Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C	Original	PDF	2SC5359 2SA1987 2-21F1A transistor 2SC5359 2SC5359
Untitled Abstract: No abstract text available Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C	Original	PDF	2SC5359 2SA1987
2SA1987 2SC5359 Abstract: 2SC5359 100W AUDIO AMPLIFIER 2SA1987 Text: Inchange Semiconductor Product Specification 2SC5359 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage	Original	PDF	2SC5359 2SA1987 2SA1987 2SC5359 2SC5359 100W AUDIO AMPLIFIER 2SA1987
transistor 2SC5359 Abstract: 100-W 2-21F1A 2SA1987 2SC5359 Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.	Original	PDF	2SA1987 2SC5359 transistor 2SC5359 100-W 2-21F1A 2SA1987 2SC5359
2Sa1987 Abstract: No abstract text available Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.	Original	PDF	2SA1987 2SC5359 2-21F1A 2Sa1987
transistor 2SC5359 Abstract: 2SC5359 Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Tc = 25°C	Original	PDF	2SC5359 2SA1987 2-21F1A transistor 2SC5359 2SC5359
Untitled Abstract: No abstract text available Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.	Original	PDF	2SA1987 2SC5359 2-21F1A
transistor 2SC5359 Abstract: 2SC5359 100-W 2-21F1A 2SA1987 Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Tc = 25°C	Original	PDF	2SC5359 2SA1987 transistor 2SC5359 2SC5359 100-W 2-21F1A 2SA1987
2SA1987 2SC5359 Abstract: 2sa1987 100W AUDIO ic AMPLIFIER 2sa198 2SC5359 Text: SavantIC Semiconductor Product Specification 2SA1987 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SC5359 ·High collector voltage APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio	Original	PDF	2SA1987 2SC5359 -230V; 2SA1987 2SC5359 2sa1987 100W AUDIO ic AMPLIFIER 2sa198 2SC5359

Untitled Abstract: No abstract text available Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.	Original	PDF	2SA1987 2SC5359
transistor 2Sc5359 Abstract: 2SC5359 2SA1987 2SC5359 100-W 2-21F1A 2SA1987 Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Maximum Ratings Tc = 25°C	Original	PDF	2SC5359 2SA1987 transistor 2Sc5359 2SC5359 2SA1987 2SC5359 100-W 2-21F1A 2SA1987
2SA1987 Abstract: transistor 2SC5359 2-21F1A 2SC5359 Text: TO SHIBA 2SA1987 2 S A 1 987 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm ¿3.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO——230V (Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier	OCR Scan	PDF	2SA1987 VCEO----230V 2SC5359 2SA1987 transistor 2SC5359 2-21F1A
Untitled Abstract: No abstract text available Text: T O S H IB A 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS 2 0 .5 M A X . • • • ^ 3 .3 ± 0 .2 High Collector Voltage : V q e O = 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier	OCR Scan	PDF	2SC5359 2SA1987 ----L20
transistor 2SC5359 Abstract: 2-21F1A 2SA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR Text: 2SA1987 TO SH IBA 2 S A 1 987 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm High Collector Voltage : V 0 e q = - 23OV Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier	OCR Scan	PDF	2SA1987 2SC5359 transistor 2SC5359 2-21F1A 2SA1987 power amplifier 2sc5359 2sa1987 TRANSISTOR
Untitled Abstract: No abstract text available Text: TO SHIBA 2SA1987 2 S A 1 987 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 2 0 .5 M A X . • • • ^ 3 .3 ± 0 .2 High Collector Voltage : V q e O = -2 3 0 V Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier	OCR Scan	PDF	2SA1987 2SC5359
transistor 2SC5359 Abstract: tr 2sA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2-21F1A 2SA1987 2SA1987 2SC5359 Text: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 20.5M AX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier	OCR Scan	PDF	2SC5359 2SA1987 transistor 2SC5359 tr 2sA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2-21F1A 2SA1987 2SA1987 2SC5359
Untitled Abstract: No abstract text available Text: TOSHIBA 2SA1987 2 S A 1 987 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 3.3 + 0.2 2Q.5MAX • High Collector Voltage : V q e O “ —230V Min. • Complementary to 2SC5359 • Recommend for 100W High Fidelity Audio Frequency Amplifier	OCR Scan	PDF	2SA1987 --230V 2SC5359
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 3 59 U nit in mm 3.3 + 0.2 2Q.5MAX • • • High Collector Voltage : V q e O = 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier	OCR Scan	PDF	2SC5359 2SA1987
transistor 2SC5359 Abstract: 2-21F1A 2SA1987 2SC5359 2SC53 Text: TOSHIBA 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS ¿3.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO —230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier	OCR Scan	PDF	2SC5359 2SA1987 transistor 2SC5359 2-21F1A 2SA1987 2SC5359 2SC53

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2SC5359 Datasheets (8)

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2SA1987 2SC5359

2SA1987 2SC5359

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2SA1987 2SC5359

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transistor 2SC5359