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Panasonic Electronic Components 2SD11190RL TRANS NPN 25V 3A MINIP3-F1
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DigiKey	2SD11190RL	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components 2SD1119-R(TX)
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Bristol Electronics	2SD1119-R(TX)		1,248			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ROHM Semiconductor 2SD1119GQL
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Quest Components	2SD1119GQL		5,610			1 $1.485 10 $1.485 100 $1.485 1000 $1.485 10000 $0.4455	Buy Now
SANYO Semiconductor Co Ltd 2SD1119-R(TX)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SD1119-R(TX)		648			1 $1.39 10 $1.39 100 $0.695 1000 $0.556 10000 $0.556	Buy Now
Panasonic Electronic Components 2SD1119R 3000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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Quest Components	2SD1119R		247			1 $0.63 10 $0.63 100 $0.42 1000 $0.294 10000 $0.294	Buy Now

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2SD1119 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD1119	Kexin	Silicon NPN epitaxial planar type	Original	PDF
2SD1119	Panasonic	Silicon NPN epitaxial planer type	Original	PDF
2SD1119	Panasonic	NPN Transistor	Original	PDF
2SD1119	Panasonic	Silicon NPN epitaxial planer type	Original	PDF
2SD1119	TY Semiconductor	Silicon NPN epitaxial planar type - SOT-89	Original	PDF
2SD1119	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SD1119	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD1119	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SD1119	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD1119	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SD1119	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SD11190RL	Panasonic	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 25VCEO 3A MINI-PWR	Original	PDF
2SD1119GRL	Panasonic	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 25VCEO 3A MINIP-3	Original	PDF
2SD1119TQ	Panasonic	Silicon NPN Epitaxial Planar Type Transistor	Original	PDF

2SD1119TR	Panasonic	Silicon NPN Epitaxial Planar Type Transistor	Original	PDF

2SD1119 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
vebo Abstract: 2SD1119 Text: Transistors SMD Type Silicon NPN epitaxial planar type 2SD1119 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol	Original	2SD1119 vebo 2SD1119	PDF
marking TQ Abstract: 2SD1119 marking 3A sot-89 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD1119 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) z Satisfactory operation performances at high efficiency with the low	Original	OT-89 2SD1119 OT-89 500mA 200MHz marking TQ 2SD1119 marking 3A sot-89	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1119 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) z Satisfactory operation performances at high efficiency with the low	Original	OT-89-3L 2SD1119 OT-89-3L 500mA 200MHz	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20 • Low collector-emitter saturation voltage VCE(sat)	Original	2002/95/EC) 2SD1119	PDF
2SD1119 Abstract: No abstract text available Text: Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the	Original	2SD1119 2SD1119	PDF
2SD1119 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 2.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ ue pl d in an c se ed lud	Original	2002/95/EC) 2SD1119 2SD1119	PDF
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification 2SD1119 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating	Original	2SD1119	PDF
2SD1119 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain sc te on na	Original	2002/95/EC) 2SD1119 2SD1119	PDF
2SD1119G Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency power amplification • Package • Low collector-emitter saturation voltage VCE(sat)	Original	2002/95/EC) 2SD1119G 2SD1119G	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119G Silicon NPN epitaxial planar type For low-frequency power amplification • Features ■ Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.	Original	2002/95/EC) 2SD1119G	PDF
2SD1119 Abstract: 5021H Text: Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the	Original	2SD1119 2SD1119 5021H	PDF
2SD1119 Abstract: No abstract text available Text: Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 4.5±0.1 1 2 0.5±0.08 3 0.4±0.08 1.5±0.1 3° * Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 25 V	Original	2SD1119 2SD1119	PDF
UN801 Abstract: No abstract text available Text: Composite Transistors UN801 Silicon PNP epitaxial planer transistor Silicon NPN epitaxial planer transistor Unit: mm For camera UN1119+2SD1119 ● 6 2 5 3 4 0.25±0.1 • Basic Part Number of Element 1 0.6±0.1 ■ Absolute Maximum Ratings Parameter P N P	Original	UN801 UN1119 2SD1119 100mA* 200MHz UN801	PDF
2SD1119 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 • Features 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain	Original	2002/95/EC) 2SD1119 2SD1119	PDF

Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119G Silicon NPN epitaxial planar type For low-frequency power amplification • Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.	Original	2002/95/EC) 2SD1119G	PDF
2SD1119G Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119G Silicon NPN epitaxial planar type For low-frequency power amplification • Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.	Original	2002/95/EC) 2SD1119G 2SD1119G	PDF
2SD1119 Abstract: marking 3a SOT89 marking 3A sot-89 SOT-89 marking 230 Text: 2SD1119 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3 4.6 4.4 1.8 1.4 1.6 1.4 3. EMITTER B Features 2.6 4.25 2.4 3.75 Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the low 0.8	Original	2SD1119 OT-89 OT-89 200MHz 500mA 2SD1119 marking 3a SOT89 marking 3A sot-89 SOT-89 marking 230	PDF
2SD1119 Abstract: No abstract text available Text: Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20 • Low collector-emitter saturation voltage VCE sat • Satisfactory operation performances at high efficiency with the lowvoltage power supply.	Original	2SD1119 2SD1119	PDF
2SD1119 Abstract: UN1119 UN801 Text: Composite Transistors UN801 Silicon PNP epitaxial planer transistor Silicon NPN epitaxial planer transistor Unit: mm M Di ain sc te on na tin nc ue e/ d For camera UN1119+2SD1119 ● 2 5 3 4 0.6±0.1 • Absolute Maximum Ratings Parameter Unit Collector to base voltage	Original	UN801 UN1119 2SD1119 2SD1119 UN801	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 2.5±0.1 0.4±0.04 di p Pl lan nclu ea e se pla m d m des ne ain ain foll	Original	2002/95/EC) 2SD1119	PDF
MIP2F3 Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the	Original	PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent	PDF
ma3df25 Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE	PDF
D1647 Abstract: sd 1651 2SD1651 2SD1834 2SD1930 2SC3439 2SC3616 d1651 2SD689 2SD1645 Text: - 246 - £ m t % Marmi. T ype No. 2SD 1621 ^ H n e SANYO M £ T O SHIBA □ P 'Ss m. NEC 2SD1898 2SC4357 2SC4672 2SD2403 2SD1119 2SC3438 2SD1834 ¥ 2SC2873 2SD 1624 / ¥ 2SC4541 2SD 1625 $ ^ 2SD 1631 2SD 1632 2SD 1633 ^ 2SD 1634 2SD 1636 2S0 1637 2SD1368	OCR Scan	2SD1621 2SD1622 2SD1623 2SD1624 2SD1625 2SD1626 2SD1627 2SD1628 2SD1629 2SD1630 D1647 sd 1651 2SD1651 2SD1834 2SD1930 2SC3439 2SC3616 d1651 2SD689 2SD1645	PDF

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2SD1119 Search Results

2SD1119 Price and Stock

Panasonic Electronic Components 2SD11190RL

Panasonic Electronic Components 2SD1119-R(TX)

ROHM Semiconductor 2SD1119GQL

SANYO Semiconductor Co Ltd 2SD1119-R(TX)

Panasonic Electronic Components 2SD1119R

2SD1119 Datasheets (15)

2SD1119 Datasheets Context Search

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marking TQ

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2SD1119

2SD1119

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2SD1119

2SD1119G

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2SD1119

2SD1119

UN801

2SD1119

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2SD1119G

2SD1119

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2SD1119

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MIP2F3

ma3df25

2sc5929

D1647