2SD1270
Abstract: npn 2a 2SB945
Text: Inchange Semiconductor Product Specification 2SD1270 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Large collector current IC ・Complement to type 2SB945 APPLICATIONS ・For power switching applications
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Original
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2SD1270
O-220Fa
2SB945
O-220Fa)
2SD1270
npn 2a
2SB945
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PDF
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2SB945
Abstract: 2SD1270
Text: SavantIC Semiconductor Product Specification 2SB945 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Large collector current IC ·Low collector saturation voltage ·Complement to type 2SD1270 APPLICATIONS ·For power switching applications
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Original
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2SB945
O-220Fa
2SD1270
O-220Fa)
10MHz
2SB945
2SD1270
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130
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Original
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2002/95/EC)
2SB0945
2SB945)
2SD1270
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0945 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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Original
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2002/95/EC)
2SD1270
2SB0945
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130
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Original
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2002/95/EC)
2SB0945
2SB945)
2SD1270
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 4.2±0.2 M Di ain sc te on na tin nc ue e/ d 16.7±0.3 14.0±0.5 Parameter Symbol
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Original
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2002/95/EC)
2SB0945
2SB945)
2SD1270
SC-67
O-220F-A1
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0945 14.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 130 V
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Original
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2002/95/EC)
2SD1270
2SB0945
SC-67
O-220F-A1
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PDF
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PNP 100V 2A
Abstract: 2SB945 2SD1270
Text: Inchange Semiconductor Product Specification 2SB945 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1270 APPLICATIONS ・For power switching applications
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Original
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2SB945
O-220Fa
2SD1270
O-220Fa)
10MHz
PNP 100V 2A
2SB945
2SD1270
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PDF
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2SB0945
Abstract: 2SB945 2SD1270
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)
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Original
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2002/95/EC)
2SB0945
2SB945)
2SD1270
SC-67
O-220F-A1
2SB0945
2SB945
2SD1270
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PDF
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2SB0945
Abstract: 2SB945 2SD1270
Text: Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0945 2SB945 Unit: mm ● • 0.7±0.1 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage
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Original
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2SD1270
2SB0945
2SB945)
2SB0945
2SB945
2SD1270
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PDF
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2SD1270
Abstract: 2SB945
Text: Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB945 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage
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Original
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2SD1270
2SB945
2SD1270
2SB945
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PDF
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2SB0945
Abstract: 2SB945 2SD1270
Text: Power Transistors 2SB0945 2SB945 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Unit: mm ● • 0.7±0.1 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage
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Original
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2SB0945
2SB945)
2SD1270
2SB0945
2SB945
2SD1270
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PDF
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2SB945
Abstract: 2SD1270
Text: JMnic Product Specification 2SB945 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1270 APPLICATIONS ・For power switching applications PINNING PIN
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Original
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2SB945
O-220Fa
2SD1270
O-220Fa)
-100V;
10MHz
2SB945
2SD1270
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PDF
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2SB945
Abstract: 2SD1270
Text: Power Transistors 2SB945 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage
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Original
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2SB945
2SD1270
120mA
2SB945
2SD1270
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PDF
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2SB0945
Abstract: 2SB945 2SD1270
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)
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Original
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2002/95/EC)
2SB0945
2SB945)
2SD1270
SC-67
O-220F-A1
2SB0945
2SB945
2SD1270
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PDF
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2SB0945
Abstract: 2SB945 2SD1270
Text: Power Transistors 2SB0945 2SB945 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open)
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Original
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2SB0945
2SB945)
2SD1270
SC-67
O-220F-A1
2SB0945
2SB945
2SD1270
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PDF
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2SB0945
Abstract: 2SD1270
Text: Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0945 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 130 V Collector-emitter voltage (Base open)
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Original
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2SD1270
2SB0945
SC-67
O-220F-A1
2SB0945
2SD1270
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PDF
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2SB0945
Abstract: 2SD1270
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0945 5.5±0.2 4.2±0.2 2.7±0.2 φ 3.1±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating
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Original
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2002/95/EC)
2SD1270
2SB0945
SC-67
O-220F-A1
2SB0945
2SD1270
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PDF
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2SD1270
Abstract: 2SB945
Text: SavantIC Semiconductor Product Specification 2SD1270 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Large collector current IC ·Complement to type 2SB945 APPLICATIONS ·For power switching applications
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Original
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2SD1270
O-220Fa
2SB945
O-220Fa)
10MHz
2SD1270
2SB945
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PDF
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2SB945
Abstract: 2SD1270
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB945 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -4A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1270 APPLICATIONS
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Original
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2SB945
2SD1270
-100V
10MHz
2SB945
2SD1270
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PDF
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2SD1267
Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Text: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290
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OCR Scan
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2SD1267
2SD1267A
2SD1268
2SD1270
2SD1271
2SD1271A
2SD1272
2SD1279
SC-62
2SD1280
2SD1267
2SD1267A
2SD1271
2SD1273
2SD1273A
2SD1274
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PDF
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Untitled
Abstract: No abstract text available
Text: Power J ransistors 2SD1270 2SD1270 Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SB945 • Features • L ow c o lle c to r-e m itte r s a tu ra tio n v o lta g e • G ood lin e a rity of DC c u r r e n t gain
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OCR Scan
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2SD1270
2SB945
2sdi27o
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PDF
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2SC1815
Abstract: 2SC5400 2sc5290 2sc458 nec 2SC923 2SC1675 2SC945 2SC3421 2SC520A 2SC519A
Text: - 90 - a s s T y p e No. M « Manuf. SANYO 3E TOSHIBA m b NEC B HITACHI ÍL * ± FUJITSU ffl fó T MATSUSHITA * 2SC 5 1 5A M 2 2SC2242 * 2S0 516 M $ 2SC3421 2SC2497 * * * 2SC 516A * 2: 2SC3421 2 SC2497A M ~S. 2SC2075 2SC 518 % 2 2SD718 2SD1270 * 2SC 518A %
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OCR Scan
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2SC2242
2SC3421
2SC2497
2SC2497A
2SC2075
2SD718
2SD1270
2SC1815
2SC5400
2sc5290
2sc458 nec
2SC923
2SC1675
2SC945
2SC3421
2SC520A
2SC519A
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PDF
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h 669A
Abstract: 2SD1270 C-123 2SB945 2SD1271
Text: 2SD1270 Power Transistors 2SD1270 Silicon NPN Epitaxial Planar Type Package Dim ensions Pow er Switching C om plem entary Pair with 2 S B 94 5 • Features • • • • 2.9max Low collector-em itter saturation voltage V ce <sao Good linearity of DC current gain (I i f e )
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OCR Scan
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2SB945
2SD1270
10MHz
2SD1271)
tT32flSE
h 669A
2SD1270
C-123
2SB945
2SD1271
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PDF
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