2SB1187
Abstract: 2SD1761
Text: Inchange Semiconductor Product Specification 2SB1187 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1761 ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS
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2SB1187
O-220Fa
2SD1761
2SB1187
2SD1761
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2SD1761
Abstract: 2SB1187
Text: SavantIC Semiconductor Product Specification 2SD1761 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1187 ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications
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2SD1761
O-220Fa
2SB1187
O-220Fa)
2SD1761
2SB1187
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2SB1187
Abstract: 2SB1187 transistor 2SD1761
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1187 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SD1761 APPLICATIONS ·Designed for low frequency power amplifier applications.
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2SB1187
2SD1761
2SB1187
2SB1187 transistor
2SD1761
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2sd1761
Abstract: No abstract text available
Text: 2SD1761 NPN TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 1 2 3. EMITTER 3 Features Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A Excellent current characteristics of DC current gain. Large collector power dissipation: PC=30W(TC=25℃)
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2SD1761
O-220F
O-220F
2SB1187
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2SB1187
Abstract: 2SD1761 Silicon Power Transistors
Text: Product Specification www.jmnic.com 2SB1187 Silicon Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1761 ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS ・For low frequency power
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2SB1187
O-220Fa
2SD1761
O-220Fa)
2SB1187
2SD1761
Silicon Power Transistors
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PDF
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2SB1187
Abstract: 2SD1761 2sb118
Text: SavantIC Semiconductor Product Specification 2SB1187 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1761 ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS
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2SB1187
O-220Fa
2SD1761
2SB1187
2SD1761
2sb118
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2SD1761
Abstract: 2SB1187 2sb118
Text: Inchange Semiconductor Product Specification 2SD1761 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1187 ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications
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Original
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2SD1761
O-220Fa
2SB1187
O-220Fa)
2SD1761
2SB1187
2sb118
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2SD1761
Abstract: 2SB1187
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD1761 TRANSISTOR NPN TO-220F 1. BASE FEATURES z Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A z Excellent current characteristics of DC current gain.
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O-220F
2SD1761
O-220F
2SB1187
2SD1761
2SB1187
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2SD1761
Abstract: 2SB1187
Text: JMnic Product Specification 2SB1187 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1761 ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS ・For low frequency power
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2SB1187
O-220Fa
2SD1761
2SD1761
2SB1187
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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PDF
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2N109
2N1304
2N1305
2N1307
2N1613
2N1711
2N1893
2N2102
2N2148
2N2165
TRANSISTOR DATASHEET D1555
d1555 transistor
TRANSISTOR D1651
D1555
D1557
D1554
d1651
transistor s1854
transistor d1555
transistor d1878
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2SD369A
Abstract: to-53 2SC1025 MJE2491 KT816V matsua
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A PD r 'CBO Max hFE fT on ON) Min (Hz) 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 40 40 40 40 40 25 40 40 40 40 40 60 60 10 10 10 10 10 20 20 20 20 25 25 2 0M 10M 10M 1 0M 3 0M
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2N4232
2SB761
2SB929
2SB941
2SD1266
2SD856
2SD1761
BDT31A
2SD369A
to-53
2SC1025
MJE2491
KT816V
matsua
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PDF
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FN1016
Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Text: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773
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2N1112
2N1212
2N1217
2N1711
2N2219A
2N2222
2N2222A
2N2369
2N2369A
FN1016
2sC9012
on4409
on4673
ON4843
C9012
S2000A3
bul310xi
2SD5080
MN1016
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PDF
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2SD1761
Abstract: 2SB1187 TRANSISTOR NPN, p2a 2SD1781 2Sd178 2SB1187 transistor le2a
Text: h -7 > i> 9 /Transistors 2SD1761 2SD1761 Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • «4ft 1 VcEt-.l-OSVfTyp.) if U '. J; ^ • / D im e n s io n s U n it : m m ) (at le /ÌB = 2A /0 2A) 21 3) P c = 3 0 W t * i ' . ' r r c - 2 S X : ) ,
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OCR Scan
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2SD1761
Tc-25X
2SB1187
09/Dimensions
-55-ISO
lc/le-2A/02A
/1C-3V/05A
2SD1781
2SD1761
2SB1187
TRANSISTOR NPN, p2a
2SD1781
2Sd178
2SB1187 transistor
le2a
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2sd1761
Abstract: No abstract text available
Text: > v 7, $ / T ransistors S 2SD1761 '> u = i> npn t£ J i It if tiitlffl/ L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • \ t ' ; £ 0 / Dimenslons U n it: mm 1) VcE ( sa t ) = 0.3V (Typ.) ir f f i l 'o (at Ic / I b =2A /0.2A ) 2)
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OCR Scan
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2SD1761
2SB1187.
2sd1761
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PDF
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2SB1187
Abstract: 2SD1761 2SB1187 transistor
Text: ROHM CO LTD 4QE D 7 0 2 0 ^ QDQS^Sö 2 E 3 RHM h ÿ > > !Z $ / I ransistors 2SD1761 7 fS 2 -ö 9 E.MfàËky'l'-J-M NPN y ' J - 2SD1761 lÊ ü iî& lilf r iiÎIf fl/L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • f t f t ^ t jil il/ D i m e n s io n s U nit : mm
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OCR Scan
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2SD1761
2SB1187
2SB1187.
2SD1761
2SB1187 transistor
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PDF
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2SD2037
Abstract: 2SC4354 2sd2041 2SD2036 2SB1335 2SB1359 2SD1832 2sd1856 2SD2034 2SB1293
Text: R OHN CORP □1 D E l ? f l a f l 1 cn -i" f nfiffirr DGDllta 3 W - I '-” I 7 ~ -Z 9 * & / D P i . ; ij 4 * ^ » p p ^ ^ É â à iÈ a w h ià i^ te ^ ^ ÿ iB ^ iïa S sà iÉ ijiû ite a ijie e Jje Je Ji • TO-220, TO-220FP Types p - , * New Products
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OCR Scan
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O-220,
O-22QFP
2SB1293
T0-220
2SB1294
T0-220FP
2SB1334
O-220
2SB1335
2SD2037
2SC4354
2sd2041
2SD2036
2SB1359
2SD1832
2sd1856
2SD2034
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2SD1761
Abstract: 2S01761 2sd1764 2sb117 2SD1760F5 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A
Text: - 254 - m Ta=25‘ C , *EP(iTc=25°C 2SD1746 fôT 2SD1747 2SD1747A fâT 2SD1748 2SD1748A VcBO VcEO (V) (V) Iccdc) (A) Pc Pci (W) (W) ICBO. (max) Cí¿A) VcB (V) % (min) Kl & 14 (Ta=25tC ) hF E (max) V'cE (V) [*EPIàtypii] VcE(sat \iîiax^ (V) iC/ 1E (A)
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OCR Scan
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2SD1746
2SD1747
2SD1747A
2SD1748
2SD1748A
2SD1749
2SD1749A
2SB1183
SC-63
2SD1759F5
2SD1761
2S01761
2sd1764
2sb117
2SD1760F5
2SD1747
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PDF
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2SB1187
Abstract: 2SB1187 transistor 2SD1761
Text: h7 > y 2 S /Transistors B 1 1 8 2SB1187 7 '> u = i> 1BJiil£1t:fr^1iffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • f t f f M & H / D im e n s io n s U n it: mm Si >4 V; v \J l-7- • tftjk 1) Pc = 3 0 W (T c = 2 5 "C ) 2) A S O A ^ jK l'o
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OCR Scan
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2SB1187
2SD1761
2SD1761.
2SB1187
2SB1187 transistor
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PDF
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2SD1292
Abstract: 2SA1038 834x
Text: h 7 > V X £ /T r a n s is to r s panM « S E ¿ í f H t í l C O l ' T • M3ÉIÍHSS • papHffiE>S» 2 7 H !£ 7Tsb i t if, ^ t ir o ^ 3 * « 5 x V N '< X í , r v w X liÿ g f iD ic s iï f â f ê M * £ t > o r í s e . f , -fro n M » ttt tlS D f fla i* » t/« iit ti* r o * 4 ic « t- 3 T a is n i
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OCR Scan
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2SD1761
-220FP)
2SD1762
2SB1186
2SB1185
2SB1181
04X1CT®
2SD1292
2SA1038
834x
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PDF
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2SB1187
Abstract: 2SD1761 2SB1187 transistor
Text: ROHM CO LTD - 4QE D 7 A 2 A CH C] ODDSSfll $ / T ransistors h "7 > v 2SB1187 T '-3 '1 -Icl ' 2SB1137 3 HRHM l& J ljjS lt^ iiiiiffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • W fiT H iH /D im e n s io n s U n it: mm • 1) Pc = 3 0 W (T c = 2 5 ”C)
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OCR Scan
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2SB1187
2SD1761t
2SD1761.
O-22QFP
2SD1761
2SB1187 transistor
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PDF
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2SD2037
Abstract: 2SC4354 2SD1761 J0801 2SB1335 2SB1353 2SD1832 2sd1856 2SD2034 2SB1293
Text: ROHN CORP □1 D E l ? f l a f l 1 cn -i" f DGDllta . - I '-” W 3 I P i . ; 7 ~ -Z 9 * & / D ij4 * ^ » n f if f ir r • TO-220, TO-220FP Types p - , i l i 111 n l * New Products Type, - Funclibn_ Driver p p ^ ^ É â à iÈ a w h ià i^ te ^ ^ ÿ iB ^ iïa S sà iÉ ijiû ite a ijie e Jje Je Ji
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OCR Scan
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O-220,
O-22QFP
2SB1293
T0-220
2SB1294
T0-220FP
2SB1334
O-220
2SB1335
2SD2037
2SC4354
2SD1761
J0801
2SB1353
2SD1832
2sd1856
2SD2034
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PDF
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transistor b1184
Abstract: B1474 C5072 C4938 b1184 transistor 3722K c4998 2SB1051 K2306 2sc4937
Text: Transistor Quick reference I Leaded ^ F ’ i i I: Package -Application Application * ^ * VrFR iV EM 3 | UM T | SM T *VnSR 2S C 408 1LN 40 Low Noise | CPT F5 | F3 > / 2S A 1037 A K L N E ) \ 2 S C 2 4 1 2KLNÎE1 2S C 2412K LN ÌR S Ì /2 S A 1 4 5 5 K
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OCR Scan
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2SA1037AKLN
V2SC41
2412K
3722K
4642K
A1037AK
2411K
B1197K
2SA1727
transistor b1184
B1474
C5072
C4938
b1184 transistor
c4998
2SB1051
K2306
2sc4937
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PDF
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