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ROHM Semiconductor 2SD1767T100R TRANS NPN 80V 0.7A MPT3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD1767T100R	Digi-Reel	2,148		1	1 $1.02 10 $0.634 100 $1.02 1000 $0.31934 10000 $0.31934	Buy Now
	2SD1767T100R	Cut Tape	2,148		1	1 $1.02 10 $0.634 100 $1.02 1000 $0.31934 10000 $0.31934	Buy Now
	2SD1767T100R	Reel	2,000		1,000	1 - 10 - 100 - 1000 $0.28882 10000 $0.21811	Buy Now
Mouser Electronics	2SD1767T100R		722			1 $0.72 10 $0.609 100 $0.415 1000 $0.279 10000 $0.21	Buy Now
Bristol Electronics	2SD1767T100R		2,000		12	1 - 10 - 100 $0.2925 1000 $0.144 10000 $0.126	Buy Now
Quest Components	2SD1767T100R		128,887			1 $0.54 10 $0.54 100 $0.54 1000 $0.54 10000 $0.0945	Buy Now
	2SD1767T100R		1,600			1 $0.6 10 $0.6 100 $0.6 1000 $0.18 10000 $0.156	Buy Now
Avnet Silica	2SD1767T100R		10,000	11 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
ROHM Semiconductor 2SD1767T100Q TRANS NPN 80V 0.7A SOT-89
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD1767T100Q	Cut Tape	147		1	1 $0.73 10 $0.491 100 $0.73 1000 $0.73 10000 $0.73	Buy Now
	2SD1767T100Q	Digi-Reel	147		1	1 $0.73 10 $0.491 100 $0.73 1000 $0.73 10000 $0.73	Buy Now
	2SD1767T100Q	Cut Tape			1	1 $1.06 10 $0.66 100 $1.06 1000 $0.33326 10000 $0.33326	Buy Now
	2SD1767T100Q	Digi-Reel			1	1 $1.06 10 $0.66 100 $1.06 1000 $0.33326 10000 $0.33326	Buy Now
	2SD1767T100Q	Reel			1,000	1 - 10 - 100 - 1000 $0.30163 10000 $0.22837	Buy Now
Mouser Electronics	2SD1767T100Q		86			1 $0.66 10 $0.633 100 $0.421 1000 $0.248 10000 $0.218	Buy Now
ComSIT USA	2SD1767T100Q		10,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ROHM Semiconductor 2SD1767 SMALL SIGNAL BIPOLAR TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SD1767		792			1 $11.0052 10 $11.0052 100 $11.0052 1000 $5.5026 10000 $5.5026	Buy Now
Others 2SD1767T100R AVAILABLE EU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SD1767T100R		88,104			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SD1767 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD1767	Kexin	Medium Power Transistor	Original	PDF
2SD1767	ROHM	Medium power transistor	Original	PDF
2SD1767	TY Semiconductor	Medium Power Transistor - SOT-89	Original	PDF
2SD1767	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD1767	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SD1767	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD1767	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SD1767	ROHM	Transistor Selection Guide	Scan	PDF
2SD1767	ROHM	SOT-23, SOT-89 and D-Pak Transistors	Scan	PDF
2SD1767	Toshiba	MEDIUM POWER TRANSISTOR(-80V -0.7A)	Scan	PDF
2SD1767T100P	ROHM	Medium Power Transistor (80 V, 0.7 A)	Original	PDF
2SD1767T100Q	ROHM	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 80V 0.7A SOT-89	Original	PDF
2SD1767T100Q	ROHM	Medium Power Transistor (80 V, 0.7 A)	Original	PDF
2SD1767T100R	ROHM	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 80V 0.7A SOT-89	Original	PDF

2SD1767T100R	ROHM	Medium Power Transistor (80 V, 0.7 A)	Original	PDF

2SD1767 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
marking BDR Abstract: 2SB1189 2SD1767 Transistor 2SD1767 MARKING 82 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1189 TRANSISTOR PNP FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO	Original	PDF	OT-89 2SB1189 2SD1767 -100mA -500mA -50mA -50mA 100MHz marking BDR 2SB1189 2SD1767 Transistor 2SD1767 MARKING 82
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1767 TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Complement the 2SB1189 2. COLLECTOR	Original	PDF	OT-89-3L OT-89-3L 2SD1767 2SB1189 100mA 500mA 100MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1189 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High breakdown voltage z Complements to 2SD1767 2. COLLECTOR 1 2 3 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	PDF	OT-89-3L 2SB1189 OT-89-3L 2SD1767 -100mA -500mA -50mA -50mA 100MHz
2Sb1238 Abstract: 2SB1189 2SD1767 2SD1859 T100 ic T100 bd marking code transistor ROHM Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5	Original	PDF	2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 SC-62 2Sb1238 2SD1859 T100 ic T100 bd marking code transistor ROHM
BR 2032 Abstract: transistor 702 2SD1767 702 RE Text: SPICE PARAMETER 2SD1767 by ROHM TR Div. * 2SD1767 NPN BJT model * Date: 2006/11/17 .MODEL 2SD1767 NPN + IS=150.00E-15 + BF=256.16 + VAF=15.861 + IKF=1.3147 + ISE=150.00E-15 + NE=1.3227 + BR=9.2084 + VAR=100 + IKR=.2032 + ISC=16.456E-12 + NC=1.3790 + NK=.77836	Original	PDF	2SD1767 Q2SD1767 00E-15 456E-12 000E-3 062E-3 16E-12 114E-12 BR 2032 transistor 702 2SD1767 702 RE
Untitled Abstract: No abstract text available Text: Transistors 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F 96-618-B13 (96-750-D13) 278	Original	PDF	2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F 96-618-B13) 96-750-D13)
transistor 2sb1238 Abstract: 2sb1238 Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5	Original	PDF	2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 SC-62 transistor 2sb1238
2SD1859 Abstract: 2SB1189 2SB1238 2SD1767 T100 sc621 Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO	Original	PDF	2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 SC-62 2SD1859 2SB1238 T100 sc621
2SD1859 Abstract: No abstract text available Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO	Original	PDF	2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 2SD1859 SC-62
2SD1859 Abstract: 2SD1767 2SB1189 2SB1238 T100 Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO	Original	PDF	2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 2SD1859 2SB1238 T100
2SB1238 Abstract: No abstract text available Text: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Dimensions (Unit : mm) 2SB1189 4.0 1.5 0.4 1.0 Collector power dissipation	Original	PDF	2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 SC-62 R1010A
2SB1189 Abstract: 2SB1238 2SD1767 2SD1859 T100 Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5	Original	PDF	2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 SC-62 2SB1238 2SD1859 T100
7A SMD Abstract: 2SD1767 Text: Transistors SMD Type Medium Power Transistor 2SD1767 Features High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage	Original	PDF	2SD1767 40X40X0 500mA -50mA, 100MHz 7A SMD 2SD1767
2sd1767 Abstract: 2SD1859 Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO	Original	PDF	2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 2SD1859 SC-62

marking 07 sot89 Abstract: No abstract text available Text: 2SB1189 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B 2.6 4.25 2.4 3.75 Features 0.8 MIN High breakdown voltage Complements to 2SD1767 0.44 0.37 Parameter B 0.53 0.48 0.40 2x) 0.35 1.5 3.0 Dimensions in inches and (millimeters)	Original	PDF	2SB1189 OT-89 OT-89 2SD1767 -100mA -500mA -50mA 100MHz marking 07 sot89
2SB1238 Abstract: 2SB1189 2SD1767 2SD1859 T100 Text: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Dimensions (Unit : mm) Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5 0.4 1.0 VCBO −80 Collector-emitter voltage	Original	PDF	2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 2SD1859 T100
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	PDF	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
ic 11105 h Abstract: No abstract text available Text: h 7 > V ^ ^/Transistors 2SD1767 2SD1767 T £ $ * V T \ r f \ s —yf& NPN Epitaxial Planar NPN Silicon Transistor fl£U5fc 2jiil§ffl/Low Freq. Power Amp. • feft 1) • W f^ jilS l/D im e n sio n s Unit : mm) P C = 2 W T * 5 (40X 40X0.7mm * 7 $ . y	OCR Scan	PDF	2SD1767 40X40X0 SC-62 2SB1189. ic 11105 h
2SD1767 Abstract: No abstract text available Text: 2SD1767 N ~7> V 7. £ /Transistors O O Q 4 I t f ^ d r v 7 7 ; u y u - ^ N # w f P N Epitaxial Planar NPN Silicon Transistor f i ^ j 5 S ^ l i ,H ffl/L o w Freq. Power Amp. • « * 1) = l U ? * j a £ , PC= 2 W T 'S - 5 40 X 4 0 X 0.7mm Hz 5 5 y ? S H 3 ifN i) o	OCR Scan	PDF	2SD1767 SC-62 2SD1767
2SD1659 Abstract: 2SB689F 2sb123b Text: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors I Medium Power Transistor —80V, —0.7A 2 S B 1 189 / 2 S B 1 238 / 2 S B 8 8 9 F •F e a tu re s • A b s o lu t e m axim um ratings (T a = 2 5 'C ) 1 ) High breakdown voltage and high current. (—80V, - 0.7A)	OCR Scan	PDF	2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F --80V, 2SB123B 2SB689F -126FP 2SD1659
Untitled Abstract: No abstract text available Text: 2SD1767 / T ransistors c n i 7 6 7 y '; ^ > h 7 > y ^ 4 , ^ ;tHll,i ffl/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistor npn Pc = 2 W T & -S 40X 4 0 X 0 .7 m m -b 7 5 2 isiMEE, 7 • T tiiG S /D im e n s io n s (U n it: mm) so- yi v; V Ui ~r	OCR Scan	PDF	2SD1767 2SB1189 2SB1189.
SS138 Abstract: 2SB1189 2SB1238 2SB889F 2SB899F 2SD1767 2SD1859 2SB899 Text: 2SB1189 12SB1238 / 2SB899F 2SD1767 / 2SD1859 12SD1200F T ra n sisto rs I M e d iu m P o w e r T r a n s is t o r — 80V, — 0.7A 2 S B 1 189 / 2S B 1238 / 2S B 889F • A b s o l u t e m a x im u m r a t in g * ( T a — 2 5 ^ ) • F * a tu r* * 1 > H i g h b r e a k d o w n v o t in g o . B V e c o	OCR Scan	PDF	2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 12SD1200F 2SB889F PSB1189 SS138 2SB889F 2SB899
Untitled Abstract: No abstract text available Text: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors Medium Power Transistor —80V, —0.7A I 2SB1189 / 2SB1238 / 2SB889F •Features •A b s o lu te maximum ratings ( T a ^ î S t ) 1 ) High breakdown voltage and high current. {—60V, —0.7A)	OCR Scan	PDF	2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F 2SB889F 2SD1767/2SD1859/2SD1200F.
2SD977 Abstract: 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162 Text: 228 - s « « tt Manuf. Type No. 2SD 973 -s-virv fc' T 2SD 973A K T 2SD 974 B ÎL tt y 2SD 972 2SD H ï¥ SANYO JÜ ^ TOSHIBA Vy>TV 2SD 971 CD - 975> 2SD 976 g fr 2SD 976A B ÎL 2SD 977 E. & 2SD 978 H H & 2S0 979 2SD1190 a m NEC B ÎL H ITACH I 2SD1162 2SD 11 1 4 K	OCR Scan	PDF	2SD971 2SD972 2SD973 2SD973A 2SD974 2SD560 2SD1162 2SD76800 2SD1190 2SD863 2SD977 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162

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ROHM Semiconductor 2SD1767T100R

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2SD1767 Datasheets (15)

2SD1767 Datasheets Context Search

marking BDR

Untitled

Untitled

2Sb1238

BR 2032

Untitled

transistor 2sb1238

2SD1859

2SD1859

2SD1859

2SB1238

2SB1189

7A SMD

2sd1767

marking 07 sot89

2SB1238

sn76131

ic 11105 h

2SD1767

2SD1659

Untitled

SS138

Untitled

2SD977