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    ROHM Semiconductor 2SD1864TV2Q

    TRANS NPN 50V 3A ATV
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    2SD1864 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1864 ROHM Power Transistor (50V, 3A) Original PDF
    2SD1864 ROHM Power Transistor Original PDF
    2SD1864 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1864 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1864 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1864 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1864 ROHM Power Transistor (50V, 3A) Scan PDF
    2SD1864 ROHM Epitaxial Planar NPN Silicon Transistor, Medium Power Amplifier Apps Scan PDF
    2SD1864 ROHM Medium Power Amp. Epitaxial Planar NPN Silicon Transistor Scan PDF
    2SD1864 ROHM ATR, ATV Transistors Scan PDF
    2SD1864 ROHM ATR / ATV Transistors Scan PDF
    2SD1864TV2P ROHM Power Transistor (50 V, 3 A) Original PDF
    2SD1864TV2Q ROHM TRANS DRIVER NPN 50V 3A ATV Original PDF
    2SD1864TV2Q ROHM Power Transistor (50 V, 3 A) Original PDF
    2SD1864TV2R ROHM TRANS DRIVER NPN 50V 3A ATV Original PDF
    2SD1864TV2R ROHM Power Transistor (50 V, 3 A) Original PDF

    2SD1864 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB1185

    Abstract: 2sB1243 2SB1184 2SD1760 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243
    Text: Transistors Power Transistor *60V, *3A 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type


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    2SB1184 2SB1243 2SB1185 2SD1760 2SD1864 2SD1762. 96-128-B57) 2SB1185 hFE is transistor 2SD1762 96-128-B57 power transistor 3A transistor 2SB1243 PDF

    2sb1184

    Abstract: No abstract text available
    Text: 2SB1184 PNP TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    2SB1184 O-251/TO-252-2L O-251 2SD1760 2SD1864. O-252-2L 30MHz PDF

    2SD1760

    Abstract: 2SB1184 2SB1243 2SD1864
    Text: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1864 1.0±0.2 0.9 1.0 (3) 1.05 Limits Unit VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V (1) Base (2) Collector (3) Emitter


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    2SD1760 2SD1864 100ms 100mm2 2SD1760 2SD1864) 2SB1184 2SB1243 2SD1864 PDF

    2SD1760

    Abstract: 2SD1762 2SB1185 2SD1864 96214 2sb118 Transistor npn 2SB1184 2SB1243
    Text: Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


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    2SD1760 2SD1864 2SD1762 2SB1184 2SB1243 2SB1185. 96-214-D57) 2SD1762 2SB1185 96214 2sb118 Transistor npn PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Text: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1760 2SD1864 1.0±0.2 Limits Unit VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V 3 A (DC) 4.5 A (Pulse) IC 2SD1864


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    2SD1760 2SD1864 2SD1760 SC-63 65Max. 2SB1184 2SB1243 2SD1864 PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Text: Power Transistor 50V, 3A 2SD1760 / 2SD1864 Dimensions (Unit : mm) 0.9 0.65Max. 0.9 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 1.5 2.5 9.5±0.5 0.5±0.1 0.65±0.1 0.75 2.5±0.2 6.8±0.2 2.3 +0.2 −0.1 4.4±0.2 C0.5 0.9 Structure


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    2SD1760 2SD1864 65Max. 2SD1760 2SB1184 2SB1243. SC-63 R0039A 2SB1243 2SD1864 PDF

    2SB1243

    Abstract: 2SD1864
    Text: Power Transistor 50V, 3A 2SD1864 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1243. 2SD1864 2.5±0.2 0.65Max. 0.5±0.1 (1) (2) 4.4±0.2 14.5±0.5 Structure Epitaxial planar type


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    2SD1864 2SB1243. 65Max. R1010A 2SB1243 2SD1864 PDF

    transistor 2sb1184

    Abstract: 2SB1184 2SD1760 2SD1864
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors 2SB1184 TO-251 TO-252-2 TRANSISTOR PNP FEATURES z Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) z Complements the 2SD1760 / 2SD1864. 123 1. BASE


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    O-251/TO-252-2Plastic-Encapsulate 2SB1184 O-251 O-252-2 2SD1760 2SD1864. 30MHz transistor 2sb1184 2SB1184 2SD1864 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1184 TRANSISTOR PNP TO-252 FEATURES z Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) z Complements the 2SD1760 / 2SD1864. 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    O-252 2SB1184 O-252 2SD1760 2SD1864. 30MHz PDF

    2SD1864

    Abstract: No abstract text available
    Text: SPICE PARAMETER 2SD1864 by ROHM TR Div. * 2SD1864 NPN BJT model * Date: 2006/11/16 .MODEL 2SD1864 NPN + IS=1.2000E-12 + BF=91.918 + VAF=5.7704 + IKF=4.5333 + ISE=1.2000E-12 + NE=1.4873 + BR=344.81 + VAR=100 + IKR=81.827E-3 + ISC=1.4049E-9 + NC=1.6296 + RE=90.000E-3


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    2SD1864 Q2SD1864 2000E-12 827E-3 4049E-9 000E-3 065E-3 04E-12 2SD1864 PDF

    2SD1760

    Abstract: 2SD1864 2SB1184 2SB1243
    Text: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1864 1.0±0.2 0.9 1.0 (3) 1.05 Limits Unit VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V (1) Base (2) Collector (3) Emitter


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    2SD1760 2SD1864 100ms 100mm2 2SD1760 2SD1864) 2SD1864 2SB1184 2SB1243 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 60V, 3A 2SB1243 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2) Complements the 2SD1864. 2SB1243 2.5±0.2 0.65Max. 4.4±0.2 0.5±0.1 (1) (2) 14.5±0.5 Structure Epitaxial planar type


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    2SB1243 2SD1864. 65Max. R1010A PDF

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Text: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1760 2SD1864 1.0±0.2 Limits Unit VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V 3 A (DC) 4.5 A (Pulse) IC 2SD1864


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    2SD1760 2SD1864 2SD1760 SC-63 65Max. 2SB1184 2SB1243 2SD1864 PDF

    EF 6802 P

    Abstract: 2sd1864 2SB1066M 2SB1243 2SD1507M 2SB1066
    Text: ROHM CO L T D — 4DE J> • 70201^ h 7 > V X £ /Transistors 2SD1507M / 2SD1864 - 2SD1507M 1 a O U IO O H ODGSÖTB T B R H M - 7 : 27-2l - J L kfÇ à rV T Jl 78I^-^NPN y lJ = l > Power Amp.


    OCR Scan
    2SD1507M/2SD1864 2SD1507M 2SB1066M/2SB124313 2SB1066M, 2SB1243. 2SD1507M 2SD1864 EF 6802 P 2sd1864 2SB1066M 2SB1243 2SB1066 PDF

    2SB1185

    Abstract: 2SB11B4 2SB1184 2SB1243 2SD1760 transistor 2sb1185
    Text: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) LOW VcE(sei). VcE(aat) — — 0 .5 V (T y p .) (le / Ib = -2 A /-0 .2 A ) 2) Com plem ents the 2SD176 0/ 2SD1864/2SD1762. •S tru c tu re


    OCR Scan
    2SB1184/2SB1243/2SB1185 2SD1760/ 2SD1864/2SD1762. 2SB1184 2SB1243 SC-63 2SB1185 O-220FP SC-67 2SB1185 2SB11B4 2SB1184 2SB1243 2SD1760 transistor 2sb1185 PDF

    Untitled

    Abstract: No abstract text available
    Text: h ~p > y 7, $ /T ra n sisto rs 2SD1507M/2SD1864 2SD1507M NPN v U □ > h 7 > y / $ 4, ^ J i ilPiffl/M edium Power Amp. Epitaxial Planar NPN Silicon Transistors • W IJ ^ iiE l/D im e n s io n s U n it: mm 1) V ce ( sa t )= 0.5V (Typ ) t l & l ' o (at Ic / I b =2A /0.2A )


    OCR Scan
    2SD1507M/2SD1864 2SD1507M B1066M 1243t 2SB1066M, 2SB1243. 2SD1864 PDF

    2SB1243

    Abstract: 2SB1184 transistor 2SB1243 2SD1760 2SD1864 gd244
    Text: 2SB1184 / 2SB1243 Transistors Power Transistor -60V, -3A 2SB1184/2SB1243 •Features •External dimensions (Units: mm) 1) LOW VcE(sat). VcEfsai) = -0.5V (Typ.) (Ic /Ib = -2A/-0.2A) 2) Complements the 2SD1760 /2SD1864. •Structure Epitaxial planar type


    OCR Scan
    2SB1184 2SB1243 2SB1184/2SB1243 2SD1760 2SD1864. 2SB1184 SC-63 65Max. 2SB1184) 2SB1243 transistor 2SB1243 2SD1864 gd244 PDF

    2SD1762

    Abstract: 230S d1760 D1864
    Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic/ I b = 2A/0.2A) 2) Complements the 2SB1184/ 2SB 1243/2SB1185. •S tru c tu re Epitaxial planar type


    OCR Scan
    2SD1760/2SD1864/2SD1762 2SB1184/ 1243/2SB1185. 2SD1760 2SD1864 2SD1762 O-126 O-220, 0Dlb713 230S d1760 D1864 PDF

    transistor B 1184

    Abstract: 2SD1762 b 1185
    Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) ^External dim ensions (Units: mm) LOW VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic / I b = 2A/0.2A) 2) Com plem ents the 2S B 1184/2S B 1243/2S B 1185. • S tru c tu re Epitaxial planar type


    OCR Scan
    2SD1760/2SD1864/2SD1762 1184/2S 1243/2S 96-214-D57) 2SD1760 2SD1864 2SD1762 transistor B 1184 b 1185 PDF

    2SD1507

    Abstract: E05A 2SD1507M 2SB1066M 2SB1243 2SD1864
    Text: N ~7 > v Z-$ / I ransistors 2SD1507M O Q 2SD1507M/2SD1864 X b ° ^ = ir '> 77^ 7 0U n if t ß d “ 1 0 0 4 - ^ NPN v ' j 3 > h 7 > V ^ i ^ l l ^ ^ ' I Ï J l / M e d i u m Power Amp. Epitaxial Planar NPN Silicon Transistors • £H f£^t5£EI/D im ensions Unit : mm


    OCR Scan
    2SD1507M/2SD1864 2SD1507M 2SD1864 2SB1066M/2SB12431 2SB1066M, 2SB1243 2SD1507M 2SD1864 2SD1507 E05A 2SB1066M 2SB1243 PDF

    TRANSISTOR d1760

    Abstract: TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1864 2SD1762 transistor 1002 d1762 f g
    Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) •E x te rn a l dimensions (Units: mm) LO W VcE(sat). VcE(sat) = 0.5V (Typ.) ( I c / I b = 2A/0.2A) 2) Complements the 2SB1184/2SB1243/2SB1185. •S tru c tu re Epitaxial planar type


    OCR Scan
    2SD1760/2SD1864/2SD1762 2SB1184/2SB1243 /2SB1185. 2SD1760 2SD1864 65Max. SC-63 2SD1762 2sd1760 2sd1864 TRANSISTOR d1760 TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1762 transistor 1002 d1762 f g PDF

    2sb1243 TRANSISTOR

    Abstract: No abstract text available
    Text: 2SB1243 Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • low collector saturation voltage, typically VCE(sat) = -0.5 V at • complementary pair with 2SD1864 2SB1243 (ATV TV2) lc/lB = -2 A /-0 .2A Applications • medium power amplifier


    OCR Scan
    2SB1243 2SD1864 2SB1243 2sb1243 TRANSISTOR PDF

    1 w NPN EPITAXIAL PLANAR TYPE

    Abstract: 2SD1760 2SD1864
    Text: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760/2SD1864 •Features •E xternal dimensions (Unite : mm) 1 ) LOW VcE(sal). 2SD1760 VcE(sai) = 0 .5 V (Typ.) 2SD1864 (I c/I b = 2 A / 0 . 2 A ) 2) Complements the 2SB1184 / 2SB1243. il •Structure


    OCR Scan
    2SD1760 2SD1864 2SB118412SB1243. 2SD1760 SC-63 1 w NPN EPITAXIAL PLANAR TYPE 2SD1864 PDF

    2SD1864

    Abstract: No abstract text available
    Text: 2SD1864 Transistor, NPN Features Dimensions Units : mm • a v a ila b le in A T V T V 2 p a c k a g e • lo w c o lle c to r s a tu ra tio n v o lta g e , ty p ic a lly V CE(sat) = 0.5 V at lc / l B = 2 A /0.2 A • c o m p le m e n ta ry p a ir w ith 2 S B 1 2 4 3


    OCR Scan
    2SD1864 2SD1864 PDF