2SD1915F
Abstract: 2SD1915 XN01504 XN1504
Text: Composite Transistors XN01504 XN1504 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD1915F x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN01504
XN1504)
2SD1915F
2SD1915F
2SD1915
XN01504
XN1504
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2sd1915F
Abstract: 2SD1915 vebo 25 XP4506
Text: Composite Transistors XP4506 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output ● 1 6 2 5 3 4 2SD1915F x 2 elements • Absolute Maximum Ratings Parameter Symbol Ratings Unit VCBO 50 V Collector to emitter voltage
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XP4506
2SD1915F
2sd1915F
2SD1915
vebo 25
XP4506
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2SD1915
Abstract: 2sd1915F XN04506 XN4506
Text: Composite Transistors XN04506 XN4506 NPN epitaxial planer transistor ● 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SD1915F x 2 elements 0 to 0.1 ● (Ta=25˚C)
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XN04506
XN4506)
2SD1915F
2SD1915
2sd1915F
XN04506
XN4506
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2SD1915F
Abstract: Panasonic MARKING 2SD1915 XP01504 XP1504
Text: Composite Transistors XP01504 XP1504 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For amplification of low frequency output 2.1±0.1 0.425 0.65 1 2 5 3 4 +0.05 0.9± 0.1 2SD1915F x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
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XP01504
XP1504)
2SD1915F
2SD1915F
Panasonic MARKING
2SD1915
XP01504
XP1504
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2SD1915F
Abstract: 2SD1915 XP4506 XP04506
Text: Composite Transistors XP04506 XP4506 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output ● 1 6 2 5 3 4 2SD1915F x 2 elements • Absolute Maximum Ratings Parameter Symbol Ratings Unit VCBO 50 V Collector to emitter voltage
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XP04506
XP4506)
2SD1915F
2SD1915F
2SD1915
XP4506
XP04506
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01504 (XP1504) Silicon NPN epitaxial planar type (0.425) 0.20±0.05 4 1 0.2±0.1 M Di ain sc te on na tin nc ue e/ d • Two elements incorporated into one package (Emitter-coupled transistors)
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2002/95/EC)
XP01504
XP1504)
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2SD1915F
Abstract: XP01504 XP1504 2SD1915
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01504 (XP1504) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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2002/95/EC)
XP01504
XP1504)
2SD1915F
XP01504
XP1504
2SD1915
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
XN04506
XN4506)
2SD1915F
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2SD1915F
Abstract: 2SD1915 XN01504 XN1504
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01504 (XN1504) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 1.50+0.25 –0.05 M Di ain sc te on na tin nc ue e/ d • Two elements incorporated into one package
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XN01504
XN1504)
2SD1915F
2SD1915
XN01504
XN1504
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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2SD1915F
Abstract: 2SD1915 XN04506 XN4506
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
XN04506
XN4506)
2SD1915F
2SD1915
XN04506
XN4506
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN04506 XN4506 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10
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XN4506)
2SD1915F
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2SD1915F
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des
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XN04506
XN4506)
2SD1915F
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2sd1915F
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1 5˚ • High forward current transfer ratio hFE • Low ON resistanse Ron 1.25±0.10 2.1±0.1
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2002/95/EC)
XP04506
XP4506)
2sd1915F
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XP01504 XP1504 Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half
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XP01504
XP1504)
2SD1915F
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2SD1915F
Abstract: XP04506 XP4506
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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XP04506
XP4506)
2SD1915F
XP04506
XP4506
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2sd1915f
Abstract: 2SD1915
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506G Silicon NPN epitaxial planar type For amplification of low-frequency output • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo
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XN04506G
2sd1915f
2SD1915
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2sd1915F
Abstract: XP01504 XP1504 2SD1915
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01504 (XP1504) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output Unit: mm 0.20±0.05 4 M Di ain sc te on na tin nc ue e/ d 5 0.12+0.05
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XP01504
XP1504)
2sd1915F
XP01504
XP1504
2SD1915
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2sd1915F
Abstract: 2SD1915
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For amplification of low-frequency output • Package ■ Features • Code Mini6-G3 • Pin Name
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2002/95/EC)
XN04506G
2sd1915F
2SD1915
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2SD1915F
Abstract: XP04506 XP4506 2SD1915
Text: Composite Transistors XP04506 XP4506 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● ● 4 Features 0.2±0.1 High emitter to base voltage VEBO. High forward current transfer ratio hFE. Low ON resistor Ron. 5° ● 0.12+0.05 –0.02 1.25±0.10 2.1±0.1
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XP4506)
2SD1915F
2SD1915F
XP04506
XP4506
2SD1915
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2sd1915F
Abstract: 2SD1915 XN01504 XN1504
Text: Composite Transistors XN01504 XN1504 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.
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XN01504
XN1504)
2SD1915F
2sd1915F
2SD1915
XN01504
XN1504
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2SD1915
Abstract: 2SD1915F XP04506 XP4506
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
XP04506
XP4506)
2SD1915
2SD1915F
XP04506
XP4506
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PDF
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2SD1915F
Abstract: XP04506 XP4506
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • High forward current transfer ratio hFE
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2002/95/EC)
XP04506
XP4506)
2SD1915F
XP04506
XP4506
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