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Rochester Electronics LLC 2SD613E POWER BIPOLAR TRANSISTOR NPN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD613E	Bulk			485	1 - 10 - 100 - 1000 $0.62 10000 $0.62	Buy Now
onsemi 2SD613E Trans GP BJT NPN 85V 6A 40000mW 3-Pin(3+Tab) TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SD613E		2,505		560	1 - 10 - 100 - 1000 $0.633 10000 $0.633	Buy Now
	2SD613E		2,000		560	1 - 10 - 100 - 1000 $0.633 10000 $0.633	Buy Now
Rochester Electronics	2SD613E		4,505		1	1 $0.5958 10 $0.5958 100 $0.5601 1000 $0.5064 10000 $0.5064	Buy Now
Others 2SD613 TRANSISTOR,BJT,NPN,85V V(BR)CEO,6A I(C),TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SD613		494			1 $0.9 10 $0.9 100 $0.42 1000 $0.375 10000 $0.375	Buy Now

2SD613 Datasheets (28)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD613	Sanyo Semiconductor	PNP/NPN Epitaxial Planar Silicon Transistor, 85V/6A, AF 25 to 35W Output Applications	Original	PDF
2SD613	Sanyo Semiconductor	85V/6A, AF 25 to 35W Output Applications	Original	PDF
2SD613	Wing Shing Computer Components	NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)	Original	PDF
2SD613	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SD613	Mospec	POWER TRANSISTORS(6A,85V,40W)	Scan	PDF
2SD613	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SD613	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SD613	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD613	Unknown	Cross Reference Datasheet	Scan	PDF
2SD613	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SD613	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SD613	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD613	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SD613	Unknown	The Japanese Transistor Manual 1981	Scan	PDF

2SD613	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD613	Sanyo Semiconductor	Sanyo Datasheets, Cross References and Circuit Examples	Scan	PDF
2SD613	Sanyo Semiconductor	Large Signal Transistors (for high frequency, high Voltage and general purpose use)	Scan	PDF
2SD613	Sanyo Semiconductor	85V/6A, AF 25 to 35W Output Applications	Scan	PDF
2SD613	Sanyo Semiconductor	Transistors / Switching Transistors	Scan	PDF
2SD613D	Unknown		Scan	PDF

2SD613 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SD617 Abstract: transistors 13001 633P 2SB633 2SB633P 2SD613P 613P Text: Ordering number : ENN6662 2SB633P/2SD613P PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions High breakdown voltage, VCEO 85V, high current 6A. • AF 35 to 45W output. unit : mm	Original	ENN6662 2SB633P/2SD613P 2SB633P 2SD613P 2010C 2SD613P] 2SB633P O-220 2SD617 transistors 13001 633P 2SB633 2SD613P 613P	PDF
2SB633 Abstract: 513H 2SD613 Text: Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions • High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. unit:mm 2010C [2SB633/2SD613] JEDEC : TO-220AB	Original	2SB633/2SD613 VCEO85V, 2010C 2SB633/2SD613] O-220AB SC-46 2SB633 2SB633 513H 2SD613	PDF
2SD613 Abstract: 2SD613 equivalent 2SD613 datasheet 2SB633 2SD613 D Text: SavantIC Semiconductor Product Specification 2SD613 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB633 ·High breakdown voltage :VCEO=85V ·High current 6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage	Original	2SD613 O-220C 2SB633 5-35W 2SD613 2SD613 equivalent 2SD613 datasheet 2SB633 2SD613 D	PDF
transistor 2sB633 Abstract: 2sd613 2SB633 513H 2sb633 sanyo Text: Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions • High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. unit:mm 2010C [2SB633/2SD613] JEDEC : TO-220AB	Original	2SB633/2SD613 VCEO85V, 2010C 2SB633/2SD613] O-220AB SC-46 2SB633 transistor 2sB633 2sd613 2SB633 513H 2sb633 sanyo	PDF
2SB633 Abstract: 2SD613 Text: Inchange Semiconductor Product Specification 2SB633 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD613 ・High breakdown voltage :VCEO=-85V ・High current :IC=-6A APPLICATIONS ・Recommend for 25-35W high fidelity	Original	2SB633 O-220C 2SD613 5-35W 2SB633 2SD613	PDF
2SB633 Abstract: 2SD613 2SD613 D Text: JMnic 2SB633 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD613 ・High breakdown voltage :VCEO=-85V ・High current :IC=-6A APPLICATIONS ・Recommend for 25-35W high fidelity audio frequency amplifier output stage	Original	2SB633 O-220C 2SD613 5-35W 2SB633 2SD613 2SD613 D	PDF
2SD613 Abstract: Shing 2SB633 2sb633 transistor Text: 2SB633 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD613 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)	Original	2SB633 O-220 2SD613 -100V 2SD613 Shing 2SB633 2sb633 transistor	PDF
2SB633 Abstract: HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD613 Text: SavantIC Semiconductor Product Specification 2SB633 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD613 ·High breakdown voltage :VCEO=-85V ·High current :IC=-6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage	Original	2SB633 O-220C 2SD613 5-35W 2SB633 HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD613	PDF
2SB633 Abstract: 2SD613 Text: 2SD613 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB633 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)	Original	2SD613 O-220 2SB633 2SB633 2SD613	PDF
2SD613 equivalent Abstract: 2SD613 2SB633 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB633 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -85V(Min) ·Complement to Type 2SD613 APPLICATIONS ·Audio frequency 25~35 watts output applications. n c	Original	2SB633 2SD613 2SD613 equivalent 2SD613 2SB633	PDF
2SD613 Abstract: 2SD613 equivalent 2SD613 datasheet 2SB633 Text: Inchange Semiconductor Product Specification 2SD613 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB633 ·High breakdown voltage :VCEO=85V ·High current 6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage	Original	2SD613 O-220C 2SB633 5-35W 2SD613 2SD613 equivalent 2SD613 datasheet 2SB633	PDF
transistor NEC K2500 Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales	Original		PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B	PDF
2SD588 Abstract: 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586 Text: Absolutes maximum ratings Ta=25ºC DC Current Gain fab/ft* Cob ºñ°í hFE VCE Ic (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 30W 2000-5A 150 -2 -3A 2SD560 (Tc=25ºC) 15000 -500 800 175 >50 -5 -100 30W -4A 150 120 -5 -500 (Tc=25ºC) -700 800 150 200 -1 -100 120*	Original	000-5A 2SD560 2SD571 15kHz 2SD586 2SD718 2SD726 2SD727 2SD728 2SD731 2SD588 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586	PDF

STK411-230E Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for	Original	STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037	PDF
d613 Abstract: D613 voltage 2SD613 2SB633 513H 2sb633 sanyo Text: O rd e rin g n u m b e r: EN513H 2SB633/2SD613 No.513H PNP/NPN Epitaxial Planar Silicon Transistors SAftfYO i 85V/6A, AF 25 to 35W Output Applications F eatu re s • High breakdown voltage V ceo^SV, high current 6A. • AF25 to 35W output. : 2SB633 A bsolute M axim um R atings at Ta = 25C,C	OCR Scan	EN513H 2SB633/2SD613 2SB633 40VfIE d613 D613 voltage 2SD613 2SB633 513H 2sb633 sanyo	PDF
2SB633 Abstract: 2SD613 transistor 2sB633 Text: ¿2&M0 SPEC PNP SILICON POWER TRANSISTORS .designed for the output stage of 25W to 3 5 W AF power amplifier FEATURES: * Low Collector-Emitter Saturation Voltage VCE sat = 2.0V(Max) @ I c=4.0A,Ib=0.4A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to NPN 2SD613	OCR Scan	to35W 2SD613 2SB633 2SB633 2SD613 transistor 2sB633	PDF
si 13001 Abstract: transistors 13001 513P HA 13001 LB 13001 TA-3082 SB633 IC HA 13001 2SB633P 2SD613P Text: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P ISAfÊYOl 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions •High breakdown voltage, VCEO 85V, high current 6A. •AF 35 to 45W output. unit : mm	OCR Scan	ENN6662 2SB633P 2SD613P 2SD613P] O-220 si 13001 transistors 13001 513P HA 13001 LB 13001 TA-3082 SB633 IC HA 13001	PDF
ir 513h Abstract: PF 513h D613 D613 voltage 2SD613 EN513H 2SB633 2SB833 ir 513h ic 513H Text: O rd e rin g n u m b e r : E N 513H 2SB633/2SD613 i PNP/NPN Epitaxial Planar Silicon Transistors SAXYO i 85V/6A, AF 25 to 35W Output Applications Features •High breakdown voltage Vceo85V, high current 6A. • AF25 to 35W output. : 2SB633 A bsolute Maximum R atings at T a=25°C	OCR Scan	EN513H 2SB633/2SD613 Vceo85V, 2SB633 2SB633/2SD613 633/2SD613 833/2S ir 513h PF 513h D613 D613 voltage 2SD613 2SB833 ir 513h ic 513H	PDF
si 13001 Abstract: transistors 13001 13001 PNP 513P 13001 npn 613P 533P ENN6662 sd613 si 13001 transistor Text: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions • High breakdown voltage, VCEO 85V, high current 6A. • AF 35 to 45W output. unit : mm 201 OC	OCR Scan	ENN6662 2SB633P 2SD613P 2SB633P 2SD613P] O-220 IT02147 IT02149 SB633 si 13001 transistors 13001 13001 PNP 513P 13001 npn 613P 533P ENN6662 sd613 si 13001 transistor	PDF
2SD613 Abstract: ica 700 2SB633 Text: ÆàMOS PEC NPN SILICON POWER TRANSISTORS NPN .designed for the output stage of 25W to 35W AF power amplifier 2SD613 FEATURES: * Low Coiiector-Emitter Saturation Voltage VCE sa tf 2.0V(Max @ Ic=4.0A,Ib=0.4A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to NPN 2SB633	OCR Scan	2SB633 2SD613 2SD613 ica 700 2SB633	PDF
2sc2460b Abstract: 2SC1957 2SC2320 25C945 2SC945 25c1815 2SC2313 2SC2560 2SC2499 2SC1815 Text: - m s T y p e No. € tt M anuf. i f v ît y i f y r y 2 SC 2307 y - y 'r y 2SC 2308— 2SC 2309 -- ED CD l=h 14 2SC 2305 2SC 2306«. 2SC 2310 • 2SC 2311 'Mitrii 2SC 2313 ' « H* •tf- 2SC 2314 2SC 2 3 1 5 ^ ' ÎL = * SANYO 2SC 2SC 2322 ŸÀ T MATSUSHITA	OCR Scan	2SC3040 2SD641 2SC2819 2SC3042 2SC2751 2SC2740 2SC3331 2SC1815 2SC945 2SC3311A 2sc2460b 2SC1957 2SC2320 25C945 2SC945 25c1815 2SC2313 2SC2560 2SC2499	PDF

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2SD613 Price and Stock

Rochester Electronics LLC 2SD613E

onsemi 2SD613E

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2SD613 Datasheets (28)

2SD613 Datasheets Context Search

2SD617

2SB633

2SD613

transistor 2sB633

2SB633

2SB633

2SD613

2SB633

2SB633

2SD613 equivalent

2SD613

transistor NEC K2500

sn76131

2SD588

STK411-230E

2N5657 equivalent

MJE494

d613

2SB633

si 13001

ir 513h

si 13001

2SD613

2sc2460b