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Panduit Corp 2SD814A-R TX
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SD814A-R TX		42,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Panasonic Electronic Components 2SD814-R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SD814-R		18,800		7	1 - 10 $0.75 100 $0.4875 1000 $0.21 10000 $0.195	Buy Now
Quest Components	2SD814-R		15,040			1 $1 10 $1 100 $1 1000 $1 10000 $0.22	Buy Now
Panasonic Electronic Components 2SD814-ARL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SD814-ARL		1,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SD814 Datasheets (20)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD814	Kexin	Silicon NPN Epitaxial Planar Type	Original	PDF
2SD814	Panasonic	NPN Transistor	Original	PDF
2SD814	Panasonic	Silicon NPN epitaxial planer type transistor	Original	PDF
2SD814	TY Semiconductor	Silicon NPN Epitaxial Planar Type - SOT-23	Original	PDF
2SD814	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SD814	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SD814	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD814	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SD814	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD814	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SD814	Panasonic	Si NPN epiaxial planar. High voltage AF low-noise amplifier.	Scan	PDF
2SD814A	Kexin	Silicon NPN Epitaxial Planar Type	Original	PDF
2SD814A	Panasonic	Transistor for high breakdown voltage low-frequency and low-noise amplification	Original	PDF
2SD814A	Panasonic	Silicon NPN epitaxial planer type	Original	PDF

2SD814A)	Panasonic	NPN Transistor	Original	PDF
2SD814A	TY Semiconductor	Silicon NPN Epitaxial Planar Type - SOT-23	Original	PDF
2SD814A	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SD814A	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SD814A	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SD814A	Panasonic	Si NPN epiaxial planar. High voltage AF low-noise amplifier.	Scan	PDF

2SD814 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SD0814A Abstract: 2SD814A Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)	Original	2002/95/EC) 2SD0814A 2SD814A) 2SD0814A 2SD814A	PDF
Untitled Abstract: No abstract text available Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d 0.4±0.2 5° 2	Original	2SD0814, 2SD0814A 2SD814, 2SD814A) 2SD0814 2SD0814A	PDF
2SD814 Abstract: XN1507 Text: Composite Transistors XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD814 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element	Original	XN1507 2SD814 2SD814 XN1507	PDF
Untitled Abstract: No abstract text available Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features M Di ain sc te on na tin nc ue e/ d 0.40+0.10 ñ0.05 5° 0.4±0.2 2.8+0.2 -0.3 2 1 (0.95) (0.95)	Original	2SD0814, 2SD0814A 2SD814, 2SD814A)	PDF
SC-88A npn Abstract: 2SD814 XP1507 4600ic Text: Composite Transistors XP1507 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 High breakdown voltage and for low noise amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SD814 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element	Original	XP1507 2SD814 SC-88A npn 2SD814 XP1507 4600ic	PDF
2SD0814 Abstract: 2SD814 XN01507 XN1507 Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD0814(2SD814) x 2 elements +0.1 +0.2 1.1 -0.1	Original	XN01507 XN1507) 2SD0814 2SD814) 2SD814 XN01507 XN1507	PDF
2SB0792 Abstract: 2SB0792A 2SB792 2SB792A 2SD0814 2SD814 Text: Transistor 2SB0792, 2SB0792A 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0814 (2SD814) Unit: mm +0.2 2.8 –0.3 2SB0792 base voltage 2SB0792A Collector to 2SB0792 –150 V –185	Original	2SB0792, 2SB0792A 2SB792, 2SB792A) 2SD0814 2SD814) 2SB0792 2SB0792 2SB0792A 2SB792 2SB792A 2SD0814 2SD814	PDF
2SD0814A Abstract: 2SD814A Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ 2 1 (0.95) (0.95)	Original	2002/95/EC) 2SD0814A 2SD814A) 2SD0814A 2SD814A	PDF
2SD0814 Abstract: 2SD0814A 2SD814 2SD814A Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features Collector to 2SD0814 base voltage 2SD0814A Collector to 2SD0814 1.45 0.95 0.95 +0.1	Original	2SD0814, 2SD0814A 2SD814, 2SD814A) 2SD0814 2SD0814 2SD0814A 2SD814 2SD814A	PDF
2SD814 Abstract: 2SD814A Text: Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features Collector to 2SD814 base voltage 2SD814A Collector to 2SD814 Emitter to base voltage VEBO Peak collector current	Original	2SD814, 2SD814A 2SD814 2SD814 2SD814A	PDF
2SD814 Abstract: 2SD814A marking LQ Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD814,2SD814A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low noise voltage NV 1 0.55 High collector-emitter voltage VCEO +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1	Original	2SD814 2SD814A OT-23 2SD814 2SD814A marking LQ	PDF
2SB792A Abstract: 2SB0792 2SB0792A 2SB792 2SD0814 2SD814 203 transistor Text: Transistor 2SB0792, 2SB0792A 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD0814 (2SD814) Unit: mm 0.40+0.10 ñ0.05 • Features Parameter Symbol Collector to 2SB0792 base voltage	Original	2SB0792, 2SB0792A 2SB792, 2SB792A) 2SD0814 2SD814) 2SB0792 2SB792A 2SB0792 2SB0792A 2SB792 2SD0814 2SD814 203 transistor	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Rating Unit VCBO	Original	2002/95/EC) 2SD0814A 2SD814A)	PDF
2SD0814A Abstract: 2SD814A Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05	Original	2002/95/EC) 2SD0814A 2SD814A) SC-59 2SD0814A 2SD814A	PDF

2SD0814A Abstract: 2SD814A Text: Transistors 2SD0814A 2SD814A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High collector-emitter voltage (Base open) VCEO	Original	2SD0814A 2SD814A) 2SD0814A 2SD814A	PDF
2SD0814 Abstract: 2SD814 XN01507 XN1507 Text: Composite Transistors XN01507 XN1507 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 5 2 1 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element Parameter 0 to 0.1 2SD0814(2SD814) x 2 elements ■ Absolute Maximum Ratings	Original	XN01507 XN1507) 2SD0814 2SD814) 2SD814 XN01507 XN1507	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)	Original	2002/95/EC) 2SD0814A 2SD814A)	PDF
2SB792A Abstract: 2SB792 2SD814 Text: Transistor 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD814 Unit: mm +0.2 2.8 –0.3 2SB792 base voltage 2SB792A Collector to 2SB792 –150 V –185 –150 VEBO –5 V Peak collector current	Original	2SB792, 2SB792A 2SD814 2SB792 2SB792A 2SB792 2SD814	PDF
Untitled Abstract: No abstract text available Text: IC SMD Type Product specification 2SD814,2SD814A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low noise voltage NV 1 0.55 High collector-emitter voltage VCEO +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1	Original	2SD814 2SD814A OT-23 2SD814	PDF
matsushita Transistor hFE CLASSIFICATION Marking Abstract: IC NE 556 2SD0814 2SD0814A 2SD814 2SD814A Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification M Di ain sc te on na tin nc ue e/ d Unit: mm • Features 0.4±0.2 5° 2 1 (0.95) (0.95) 1.9±0.1 ■ Absolute Maximum Ratings	Original	2SD0814, 2SD0814A 2SD814, 2SD814A) matsushita Transistor hFE CLASSIFICATION Marking IC NE 556 2SD0814 2SD0814A 2SD814 2SD814A	PDF
2SD0814 Abstract: 2SD814 XP01507 XP1507 Text: Composite Transistors XP01507 XP1507 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 High breakdown voltage and for low noise amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SD0814(2SD814) x 2 elements 0 to 0.1 ● 0.7±0.1	Original	XP01507 XP1507) 2SD0814 2SD814) 2SD814 XP01507 XP1507	PDF
MIP2F3 Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the	Original	PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B	PDF
2SD1206 Abstract: 2SB895 2SB895a 2SB894 2SD1206 R 2SD1206 S 2SB792 2SD814 2SD946 2SD946A Text: PANASONIC INDL/ELEK-CSEflI} 7EC D \| ^ 3 5 0 5 4 □ □□âflci2 2 V '^yV T Sÿ * ' 2SB792 2SB792 '> IJ ZI y PNP •3f“f l2 /S i P N P E p itax ia l P la n a r X t °2 l ^ l a t e f f l /H ig h Voltage Low-noise Amplifier 2SD814 £ ^ y ? ' J U/'Com plem entary Pair with 2SD814	OCR Scan	2SB792 2SD814 2SD814 2SD1206 2SB895 2SB895a 2SB894 2SD1206 R 2SD1206 S 2SB792 2SD946 2SD946A	PDF

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2SD814 Search Results

2SD814 Price and Stock

Panduit Corp 2SD814A-R TX

Panasonic Electronic Components 2SD814-R

Panasonic Electronic Components 2SD814-ARL

2SD814 Datasheets (20)

2SD814 Datasheets Context Search

2SD0814A

Untitled

2SD814

Untitled

SC-88A npn

2SD0814

2SB0792

2SD0814A

2SD0814

2SD814

2SD814

2SB792A

Untitled

2SD0814A

2SD0814A

2SD0814

Untitled

2SB792A

Untitled

matsushita Transistor hFE CLASSIFICATION Marking

2SD0814

MIP2F3

sn76131

2SD1206