2SJ0672
Abstract: 2SK3539 UP04979
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter
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2002/95/EC)
UP04979
2SJ0672
2SK3539
OD-723
-20lues,
2SJ0672
2SK3539
UP04979
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ON4030
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter
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2002/95/EC)
UP04979
2SJ0672
2SK3539
ON4030
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Untitled
Abstract: No abstract text available
Text: Silicon MOSFETs Small Signal 2SJ0672 Silicon P-channel MOSFET Unit: mm For switching circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5˚ 0.15 min. 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C Rating Unit VDS −30 V Gate-source voltage (Drain open)
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2SJ0672
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2SJ0672
Abstract: 2SK3539 UP04979
Text: Composite Transistors UP04979 Silicon N-channel MOSFET Tr1 Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter Tr1 Symbol Rating Unit VDSS 50 V Marking Symbol: 4T Gate-source voltage
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UP04979
2SJ0672
2SK3539
OD-723
2SJ0672
2SK3539
UP04979
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2SJ0672
Abstract: ON5040
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0672 Silicon P-channel MOSFET Unit: mm For switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 Peak drain current Drain power dissipation Channel temperature
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2002/95/EC)
2SJ0672
2SJ0672
ON5040
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2SJ0672
Abstract: 2SK3539 UP04979
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 For switching • 2SJ0672 + 2SK3539
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2002/95/EC)
UP04979
2SJ0672
2SK3539
OD-723
2SJ0672
2SK3539
UP04979
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 • Features 1 • 2SJ0672 + 2SK3539 ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
UP04979
2SJ0672
2SK3539
OD-723
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PDF
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2SJ0672
Abstract: No abstract text available
Text: Silicon MOSFETs Small Signal 2SJ0672 Silicon P-channel MOSFET Unit: mm For switching circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5˚ 0.15 min. 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C Rating Unit VDS −30 V Gate-source voltage (Drain open)
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2SJ0672
2SJ0672
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2SJ0672
Abstract: 2SK3539 UP04979
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 For switching • 2SJ0672 + 2SK3539
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2002/95/EC)
UP04979
2SJ0672
2SK3539
OD-723
2SJ0672
2SK3539
UP04979
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PDF
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Untitled
Abstract: No abstract text available
Text: Silicon MOSFETs Small Signal 2SJ0672 Silicon P-channel MOSFET Unit: mm For switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 1.20±0.05 0.80±0.05 5˚ M Di ain sc te on na tin nc ue e/ d • Ultra small package switching MOSFETs • SSS-Mini type package, allowing downsizing of the equipment and
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2SJ0672
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0672 Silicon P-channel MOSFET Unit: mm For switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 V Gate-source voltage (Drain open) VGSO Peak drain current IDP
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2SJ0672
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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MS701
Abstract: 2SJ0672 2SK3539G UP04979
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Package High-speed switching Incorporating a built-in gate protection-diode
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UP04979G
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2SK3539G
MS701
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2SK3539G
UP04979
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2SJ0672
Abstract: 2SK3539G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Package High-speed switching Incorporating a built-in gate protection-diode
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UP04979G
2SJ0672
2SK3539G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Features Package High-speed switching Incorporating a built-in gate protection-diode
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2002/95/EC)
UP04979G
2SJ0672
2SK3539G
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2SJ0672
Abstract: 2SK3539G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Package High-speed switching Incorporating a built-in gate protection-diode
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2002/95/EC)
UP04979G
2SJ0672
2SK3539G
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Package High-speed switching Incorporating a built-in gate protection-diode
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UP04979G
2SJ0672
2SK3539G
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