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    2SJ21 Search Results

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    2SJ21 Price and Stock

    Rochester Electronics LLC 2SJ215-E

    P-CHANNEL MOSFET
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    DigiKey 2SJ215-E Bulk 62
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    Rochester Electronics LLC 2SJ216-E

    P-CHANNEL SMALL SIGNAL MOSFET
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    DigiKey 2SJ216-E Bulk 49
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    Rochester Electronics LLC 2SJ214STL-E

    GENERAL SWITCHING POWER MOSFET
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    DigiKey 2SJ214STL-E Bulk 115
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    Rochester Electronics LLC 2SJ213-T1-AZ

    P-CHANNEL POWER MOSFET
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    DigiKey 2SJ213-T1-AZ Bulk 417
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    Rochester Electronics LLC 2SJ210(0)-T1B-A

    P-CHANNEL SMALL SIGNAL MOSFET
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    DigiKey 2SJ210(0)-T1B-A Bulk 902
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    Find more 2SJ21 price and stock on Findchips.com

    2SJ21 Datasheets (101)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ21 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ21 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ210 Kexin P-Channel MOSFET for Switching Original PDF
    2SJ210 NEC Semiconductor Selection Guide 1995 Original PDF
    2SJ210 NEC Semiconductor Selection Guide Original PDF
    2SJ210 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ210 Unknown FET Data Book Scan PDF
    2SJ210 NEC MOS FIELD EFFECT TRANSISTOR Scan PDF
    2SJ210 NEC P-Channel MOS FET for Switching Scan PDF
    2SJ210-L NEC P-channel MOS FET Scan PDF
    2SJ210-T1B NEC P-channel MOS FET Scan PDF
    2SJ210-T2B NEC P-channel MOS FET Scan PDF
    2SJ211 Kexin P-Channel MOSFET for Switching Original PDF
    2SJ211 NEC Semiconductor Selection Guide 1995 Original PDF
    2SJ211 NEC Semiconductor Selection Guide Original PDF
    2SJ211 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ211 Unknown FET Data Book Scan PDF
    2SJ211 NEC P-CHANNEL MOS FET FOR SWITCHING Scan PDF
    2SJ211 NEC P-Channel MOS FET for Switching Scan PDF
    2SJ211-L NEC P-channel MOS FET Scan PDF

    2SJ21 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking PP

    Abstract: 2SJ213 mosfet vgs 5v vds 100v MOSFET SMD pp
    Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ213 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Directly driven by Ics having a 5V poer supply. Has low on-state resistance RDS on =4.2 MAX.@VGS=-1.0V,ID=-0.3A 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1


    Original     		2SJ213 OT-89 -100V -300mA marking PP 2SJ213 mosfet vgs 5v vds 100v MOSFET SMD pp PDF

    2SJ211

    Abstract: N15j
    Text: •At In MOS FIELD EFFECT TRANSISTOR 2SJ211 P-CHANNEL MOS FET FOR SWITCHING T he 2 S J 2 1 1 , P-channel vertical ty p e M O S F E T , is a sw itching device PACKAGE DIMENSIONS Unit : mm source. 2.8 ±0.2 1.5 w hich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V p ow er


    OCR Scan     		2SJ211 2SJ211 N15j PDF

    2SJ210

    Abstract: MARK H16 2SJ21 T200 T400
    Text: MOS FIELD EFFECT TRANSISTOR 2SJ210 P-CHANNEL MOS FET FOR SWITCHING The 2SJ210, P-channel vertical type MOS FET, is a switching device OUTLINE DIMENSIONS Unit : mm which can be driven directly by the output of ICs having a 5 V power 2.8 ± 0.2 source. 1.5


    OCR Scan     		2SJ210 2SJ210, 2SJ210 MARK H16 2SJ21 T200 T400 PDF

    Hitachi DSA001651

    Abstract: No abstract text available
    Text: 2SJ218 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		2SJ218 Hitachi DSA001651 PDF

    2SJ215

    Abstract: Hitachi DSA001651
    Text: 2SJ215 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		2SJ215 2SJ215 Hitachi DSA001651 PDF

    2SJ219

    Abstract: Hitachi 2SJ Hitachi DSA001651
    Text: 2SJ219 L , 2SJ219(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		2SJ219 Hitachi 2SJ Hitachi DSA001651 PDF

    2SJ214

    Abstract: 2sj172 2SJ214S Hitachi 2SJ Hitachi DSA001651
    Text: 2SJ214 L , 2SJ214(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		2SJ214 2sj172 2SJ214S Hitachi 2SJ Hitachi DSA001651 PDF

    2SJ218

    Abstract: 2SJ217 Hitachi Scans-001
    Text: 2SJ218 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		2SJ218 2SJ217 2SJ218 2SJ217 Hitachi Scans-001 PDF

    j172

    Abstract: 2SJ214S 2SJ214L 2SJ214
    Text: 2SJ214 L , 2SJ214(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		2SJ214 2SJ214CS) j172 2SJ214S 2SJ214L PDF

    2SJ211

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE _ _ _ 2SJ211 P-CHANNEL MOS FET FOR SW ITCHING The 2SJ211, P-channel vertical type MOS FET, is a s w itch ing device P A C K A G E DIMENSIONS Unit : mm w h ich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V power


    OCR Scan     		2SJ211 2SJ211, 2SJ211 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS FIELD EFFECT TRAN SISTO R _ 2SJ213 P-CHANNEL MOS FET FOR SW ITCHING The 2S J213, P-channel vertical type MOS FET, is a sw itch ing device PACKAGE DIMENSIONS Unit : mm w hich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V pow er


    OCR Scan     		2SJ213 IR30-00 VP15-00 WS60-00 PDF

    2SJ211

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 •A t I n MOS FIELD EFFECT TRANSISTOR 2SJ211 P-CHANNEL MOS FET FOR SWITCHING The 2SJ211, P-channel vertical type MOS F ET, is a switching device


    OCR Scan     		2SJ211 2SJ211, 2SJ211 PDF

    2SJ217

    Abstract: 2SJ218
    Text: HITACHI 2SJ218-SILICON P-C H AN N EL MOS FET HIGH SPEED POWER SWITCHING cm •FEATURES # Low ON-Resistance # High Speed Switching # High Speed Switching # 4 V Gate Drive Device - Can be driven from 5V source l.O a ic 2. Drain # Suitable for Motor Drive, DC-DC Converter,


    OCR Scan     		2SJ218- 2SJ217 2SJ218 2SJ217 2SJ218 PDF

    2SJ216

    Abstract: Hitachi DSA001651
    Text: 2SJ216 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device _ Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		2SJ216 2SJ216 Hitachi DSA001651 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ215 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		2SJ215 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ216- 44Tb2DS OGie^bT I?«? « H i m HITACHI/ OPTOELECTRONICS hlE D SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FE A T U R E S # Low On-Resistance # High Speed Switching # Low Drive Current # 4 V Gate Drive Device - Can be driven from 5V source


    OCR Scan     		2SJ216 44Tb2DS Jb20S DD12T72 PDF

    2SJ213

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ213 P-CHANNEL MOS FET FOR SWITCHING The 2SJ213, P-channel vertical type MOS F ET, is a switching device


    OCR Scan     		2SJ213 2SJ213, PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ219 L , 2SJ219(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		2SJ219 2SJ173 PDF

    2SJ216

    Abstract: 2SJ215 Hitachi 2SJ Hitachi DSA00514
    Text: 2SJ216 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		2SJ216 D-85622 2SJ216 2SJ215 Hitachi 2SJ Hitachi DSA00514 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ217 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		2SJ217 PDF

    2SJ213

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ213 P-CHANNEL MOS FET FOR SWITCHING The 2SJ213, P-channel vertical type MOS F ET, is a switching device PACKAGE DIMENSIONS Unit : mm which can be driven directly by the o utp ut o f ICs having a 5 V power source.


    OCR Scan     		2SJ213 2SJ213, 2SJ213 PDF

    h18 smd transistor

    Abstract: smd marking H18 SMD Transistor h18 SOT 23 marking H18 2SJ211 mosfet vgs 5v vds 100v
    Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ211 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Not necessary to consider driving current because of 1 0.55 Directly driven by Ics having a 5V poer supply. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1


    Original     		2SJ211 OT-23 -10mA h18 smd transistor smd marking H18 SMD Transistor h18 SOT 23 marking H18 2SJ211 mosfet vgs 5v vds 100v PDF

    2SJ212

    Abstract: T500 t500 06 60 05
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ212 P-CHANNEL MOS FET FOR S W IT C H IN G The 2SJ212, P-channel vertical type MOS FET, is a switching device


    OCR Scan     		2SJ212 2SJ212, 2SJ212 T500 t500 06 60 05 PDF

    WE74

    Abstract: 2SJ212
    Text: NEC M O S Field Effect Transistor 2SJ212 M O S FET KBm 2SJ212Ü P f- ì* -t' /l'MM MOS F E T T \ 5 V ïtï 3 U C ¿0 £H* fc i § W M m W iW ^ T tÊ * X ^ -{È • mm -f ' y f - > * M O S F E T i i : t >ffiijL*s'fg <, X ^ y f > 7 & H b ü t l Z U § £ £ > ,


    OCR Scan     		2SJ212IÃ WE74 2SJ212 PDF