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    2SJ32 Search Results

    2SJ32 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ325-Z-AY Renesas Electronics Corporation Switching P-Channel Power MOSFET, MP-3Z, /Bag Visit Renesas Electronics Corporation
    2SJ327-Z-E1-AZ Renesas Electronics Corporation Switching P-Channel Power MOSFET Visit Renesas Electronics Corporation
    2SJ325-AZ Renesas Electronics Corporation Switching P-Channel Power MOSFET, MP-3, /Bag Visit Renesas Electronics Corporation
    2SJ325-AY Renesas Electronics Corporation Switching P-Channel Power MOSFET, MP-3, /Bag Visit Renesas Electronics Corporation
    2SJ329-AZ Renesas Electronics Corporation Switching P-Channel Power MOSFET Visit Renesas Electronics Corporation
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    2SJ32 Price and Stock

    Rochester Electronics LLC 2SJ320

    P-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SJ320 Bulk 683
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    Rochester Electronics LLC 2SJ325-AY

    P-CHANNEL SMALL SIGNAL MOSFET
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    DigiKey 2SJ325-AY Bulk 422
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    Rochester Electronics LLC 2SJ325-AZ

    P-CHANNEL SMALL SIGNAL MOSFET
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    DigiKey 2SJ325-AZ Bulk 319
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    Rochester Electronics LLC 2SJ325-Z-AY

    P-CHANNEL SMALL SIGNAL MOSFET
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    DigiKey 2SJ325-Z-AY Bulk 381
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    Rochester Electronics LLC 2SJ325-Z-E1-AY

    P-CHANNEL SMALL SIGNAL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SJ325-Z-E1-AY Bulk 319
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    2SJ32 Datasheets (74)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ32 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ32 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ320 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ320 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan PDF
    2SJ320 Sanyo Semiconductor TO-220ML, TO-220MF Type Transistors Scan PDF
    2SJ320 Sanyo Semiconductor Large Signal Power MOSFETS Scan PDF
    2SJ321 Hitachi Semiconductor Power MOSFET Quick Reference Guide Original PDF
    2SJ321 Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ321 Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ322 Hitachi Semiconductor Power MOSFET Quick Reference Guide Original PDF
    2SJ322 Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ322 Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ323 Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ323 Hitachi Semiconductor Power MOSFET Quick Reference Guide Original PDF
    2SJ323 Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ324 Kexin P-Channel MOSFET Original PDF
    2SJ324 NEC Semiconductor Selection Guide 1995 Original PDF
    2SJ324 NEC Semiconductor Selection Guide Original PDF
    2SJ324 NEC SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE Scan PDF
    2SJ324 NEC Switching P-Channel Power MOS FET Industrial Use Scan PDF

    2SJ32 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA001651

    Abstract: No abstract text available
    Text: 2SJ323 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original
    PDF 2SJ323 O-220CFM Hitachi DSA001651

    2sj322

    Abstract: Hitachi DSA001651
    Text: 2SJ322 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original
    PDF 2SJ322 O-220CFM 2sj322 Hitachi DSA001651

    NEC C 324 C

    Abstract: TC-7959 2SJ324
    Text: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistors 2SJ324,324-Z Pチャネル・パワーMOS FET スイッチング用 2SJ324は,Pチャネル・パワーMOS FETでオン抵抗が低く,またスイッチング特性が優れており,各種アクチュエー


    Original
    PDF 2SJ324 324-Z 2SJ324PMOS D18327JJ2V0DS002 TC-7959 D18327JJ2V0DS NEC C 324 C TC-7959

    2SJ325

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type MOS Field Effect Power Transistors 2SJ325 TO-252 +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3.80 VGS=-4V,ID=-1.6A Built-in G-S Gate Protection Diode +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)=0.15 Unit: mm +0.1 2.30-0.1 +0.25


    Original
    PDF 2SJ325 O-252 2SJ325

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ324,324-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 solenoid, motor and lamp driver. +0.2 The 2SJ324 is P-channel MOS Field Effect Transistor designed for 5.0 ±0.2


    Original
    PDF 2SJ324 324-Z

    TA-0053

    Abstract: 2SJ320 ITR00433 ITR00434 ITR00435 ITR00436
    Text: 注文コード No. N 4 6 1 5 A 2SJ320 No. 4 6 1 5 A 三洋半導体ニューズ 52599 新 半導体ニューズ No. 4615 とさしかえてください。 2SJ320 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用


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    PDF 2SJ320 ITR00439 ITR00440 ITR00441 ITR00442 TA-0053 2SJ320 ITR00433 ITR00434 ITR00435 ITR00436

    TA-0053

    Abstract: 2SJ320
    Text: Ordering number:EN4615A P-Channel Silicon MOSFET 2SJ320 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ320]


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    PDF EN4615A 2SJ320 2SJ320] O-220ML TA-0053 2SJ320

    Untitled

    Abstract: No abstract text available
    Text: 2SJ321 Silicon P C h a n n e l M O S F E T Application T0-220CFM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC —DC


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    PDF 2SJ321 T0-220CFM 2SJ290

    2SJ328

    Abstract: 2SJ328-Z J0502
    Text: NEC M O S ^ l # ^ l / \ “7 - M O S F E T M O S Field Effect P ow e r Transistors 2SJ328,2SJ328-Z P ^ q U U /N ^ - M x 2 S J 3 2 8 1 ÎP 5 1 + J U W -M O S FETT * O S F E T i f f i m tt : m m ) > S S * ' i''{6 < X -f •> Y 7 ? - E lï# ^ D C - D C = l> /S - ^ iC Â T !- r o £ £ ,


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    PDF 2SJ328 2SJ328-Z 2SJ328ttP? bT2SJ3291f IEI-620) 2SJ328 2SJ328-Z J0502

    Untitled

    Abstract: No abstract text available
    Text: 2SJ323 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


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    PDF 2SJ323 O-220CFM 2SJ280

    Untitled

    Abstract: No abstract text available
    Text: 2SJ322 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


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    PDF 2SJ322 2SJ291

    10 HFK

    Abstract: 2SJ326 2SJ326-Z MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 DATA SHEET A MOS FIELD EFFECT POWER TRANSISTORS 2SJ326, 2SJ326-Z SWITCHING P-CHANNEL POWER MOS FET


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    PDF 2SJ326, 2SJ326-Z 2SJ326 IEI-1209) 10 HFK MEI-1202 TEA-1035

    2SJ328

    Abstract: 2SJ328-Z MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 DATA SHEET NEC P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR iB— r 2SJ328, 2SJ328-Z SWITCHING P-CHANNEL POWER MOS FET


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    PDF 2SJ328, 2SJ328-Z 2SJ328 IEI-1209) MEI-1202 TEA-1035

    TC-2461

    Abstract: No abstract text available
    Text: I'i4 ì Ci S H E E ! MOS FIELD EFFECT POWER TRANSISTORS 2SJ326,2SJ326-2 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION Th e 2 S J3 2 6 is P-channel M O S Field Effect Transisto r de­ PACKAGE DIMENSIONS in millimeters signed for solenoid, m otor and lam p driver.


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    PDF 2SJ326 2SJ326-2 IEI-1209) 2SJ326, 2SJ326-Z TC-2461

    2SJ328

    Abstract: 2SJ328-Z MEI-1202 TEA-1035
    Text: DATA SHEET NEC P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR iB— r 2SJ328, 2SJ328-Z SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ328 is P-channel MOS Field Effect Transistor designed in m illim e te rs for solenoid, m otor and lamp driver.


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    PDF 2SJ328, 2SJ328-Z 2SJ328 IEI-1209) 2SJ328-Z MEI-1202 TEA-1035

    Untitled

    Abstract: No abstract text available
    Text: 2SJ323 Silicon P C h a n n e l M O S F E T Application High speed pow er switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC —DC


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    PDF 2SJ323 2SJ280.

    cds28

    Abstract: 2SJ326 2SJ326-Z MEI-1202 TEA-1035 08CC0
    Text: NEC J i_ r DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ326, 2SJ326-Z SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ326 is P-channel MOS Field Effect Transistor de­ in millimeters signed for solenoid, motor and lamp driver.


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    PDF 2SJ326, 2SJ326-Z 2SJ326 IEI-1209) cds28 2SJ326-Z MEI-1202 TEA-1035 08CC0

    2SJ322

    Abstract: No abstract text available
    Text: 2SJ322 Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC —DC


    OCR Scan
    PDF 2SJ322 2SJ291. 2SJ322

    Untitled

    Abstract: No abstract text available
    Text: 2SJ321 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter


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    PDF 2SJ321 -220CFM 2SJ290

    2SJ329

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET N E C kf * A P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SJ329 SWITCHING P-CHANNEL POWER MOS FET


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    PDF 2SJ329 IEI-1209) MEI-1202 TEA-1035

    2SJ325

    Abstract: 2SJ325-Z MEI-1202 TEA-1035
    Text: DATA SHEET NEC .r _ • _ MOS FIELD EFFECT POWER TRANSISTORS 2SJ325, 2SJ325-Z A SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ325 is P-channel M O S Field Effect Transistor de­ in m illim eters signed fo r solenoid, m otor and lam p driver.


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    PDF 2SJ325, 2SJ325-Z 2SJ325 IEI-1209) MEI-1202 TEA-1035

    2SJ327

    Abstract: 2SJ327-Z MEI-1202 TEA-1035 TC-2462
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET A MOS FIELD EFFECT POWER TRANSISTORS 2SJ327, 2SJ327-Z SWITCHING P-CHANNEL POWER MOS FET


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    PDF 2SJ327, 2SJ327-Z 2SJ327 IEI-1209) MEI-1202 TEA-1035 TC-2462

    2SJ321

    Abstract: No abstract text available
    Text: 2SJ321 Silicon P-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for sw itching regulator, D C -D C converter


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    PDF 2SJ321 2SJ290 2SJ321

    j325

    Abstract: TC-2460
    Text: MOS FIELD EFFECT POWER TRANSISTORS 2SJ325, 2SJ325-Z SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ325 is P-channel MOS Field Effect Transistor d e ­ PACKAGE DIMENSIONS in m illim eters signed for solenoid, motor and lamp driver. FEATURES


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    PDF 2SJ325, 2SJ325-Z 2SJ325 IEl-1209) J325-Z j325 TC-2460