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    2SJ412 Price and Stock

    Toshiba America Electronic Components 2SJ412

    0.32 ohm, POWER, FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SJ412 3
    • 1 $3.8964
    • 10 $2.9223
    • 100 $2.9223
    • 1000 $2.9223
    • 10000 $2.9223
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    2SJ412 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ412 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SJ412 Toshiba TRANS MOSFET P-CH 100V 16A 3(2-10S1B) Original PDF
    2SJ412 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ412 Toshiba Original PDF
    2SJ412 Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, DC-DC converter, relay drive and motor drive applications Scan PDF
    2SJ412 Toshiba P-Channel MOSFET Scan PDF
    2SJ412 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (LL-pi-MOSV) Scan PDF

    2SJ412 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR j412

    Abstract: No abstract text available
    Text: 2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)


    Original     		PDF 2SJ412 2-10S1B TRANSISTOR j412

    TRANSISTOR j412

    Abstract: J412 2SJ412
    Text: 2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)


    Original     		PDF 2SJ412 TRANSISTOR j412 J412 2SJ412

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    TRANSISTOR j412

    Abstract: J412 2SJ412
    Text: 2SJ412 Silicon P Channel MOS Type L2-π-MOSV TOSHIBA Field Effect Transistor 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)


    Original     		PDF 2SJ412 TRANSISTOR j412 J412 2SJ412

    TRANSISTOR j412

    Abstract: 2SJ412 J412
    Text: 2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.)


    Original     		PDF 2SJ412 TRANSISTOR j412 2SJ412 J412

    J412

    Abstract: 2SJ412
    Text: 2SJ412 東芝電界効果トランジスタ シリコンPチャネルMOS形 L2-π-MOSV 2SJ412 ○ リレー駆動DC-DC コンバータ用 ○ モータドライブ用 • 4 V 駆動です。 • オン抵抗が低い。 単位: mm : RDS (ON) = 0.15 Ω (標準)


    Original     		PDF 2SJ412 2-10S1B J412 2SJ412

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    2SJ412

    Abstract: No abstract text available
    Text: TO SH IBA 2SJ412 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 4 V Gate Drive Low Drain-Source ON Resistance : RdS (ON) - 0.15 ü, (Typ.)


    OCR Scan     		PDF 2SJ412 SJ412 2SJ412

    KIV* diode

    Abstract: marking 77s
    Text: TOSHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-M O SV i <; i a 1 1 Mr v • HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS TO-22QFL U nit in mm


    OCR Scan     		PDF 2SJ412 O-22QFL --60V) --16A KIV* diode marking 77s

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SJ412 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm TO-220FL 4 V Gate Drive


    OCR Scan     		PDF 2SJ412 O-220FL

    SJ412

    Abstract: 2SJ412 TRANSISTOR BC 208
    Text: 2SJ412 TO SH IBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Source ON Resistance : RßS (ON) = 0.15 CI (Typ.) High Forward Transfer Admittance : |Yfs| = 7.7 S (Typ.)


    OCR Scan     		PDF 2SJ412 SJ412 SJ412 2SJ412 TRANSISTOR BC 208

    2SJ412

    Abstract: marking 77s
    Text: TOSHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ412 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-22QFL 10.3MAX 4V Gate Drive


    OCR Scan     		PDF 2SJ412 O-22QFL 2SJ412 marking 77s

    2SJ412

    Abstract: marking 77s
    Text: TOSHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ412 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS TO-22QFL U nit in mm 10.3MAX. 4V Gate Drive


    OCR Scan     		PDF 2SJ412 marking 77s

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M OS TYPE L2-tt-M O SV 2SJ412 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S TO-220FL U n it in m m


    OCR Scan     		PDF 2SJ412 O-220FL

    marking 77s

    Abstract: No abstract text available
    Text: TO SHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-M O SV 2SJ412 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-22QFL 10.3MAX


    OCR Scan     		PDF 2SJ412 O-22QFL 0-15il --60V) 20kf2) --25V, marking 77s

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SJ412 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TO-220FL 4 V Gate Drive


    OCR Scan     		PDF 2SJ412 O-220FL