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    2SJ567 Search Results

    2SJ567 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ567 Toshiba TRANS MOSFET P-CH 200V 2.5A 3(2-7J1B) Original PDF
    2SJ567 Toshiba Original PDF
    2SJ567 Toshiba P-Channel MOSFET Original PDF
    2SJ567 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ567(2-7B1B) Toshiba 2SJ567 - TRANSISTOR 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power Original PDF
    2SJ567(2-7J1B) Toshiba 2SJ567 - TRANSISTOR 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-7J1B, SC-64, 3 PIN, FET General Purpose Power Original PDF
    2SJ567(TE16L1,NQ) Toshiba 2SJ567 - MOSFET P-CH 200V 2.5A PW-MOLD Original PDF

    2SJ567 Datasheets Context Search

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    2SJ567

    Abstract: No abstract text available
    Text: 2SJ567 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ567 Industrial Applications Switching Applications Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)


    Original     		PDF 2SJ567 2SJ567

    2SJ567

    Abstract: j567
    Text: 2SJ567 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ567 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SJ567 2SJ567 j567

    Untitled

    Abstract: No abstract text available
    Text: 2SJ567 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type -MOSV 2SJ567 Switching Applications Unit: mm 1.5 ± 0.2 (typ.) 5.5 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.6 5.2 ± 0.2 1.2 MAX. • 6.5 ± 0.2 • High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SJ567

    2SJ567

    Abstract: No abstract text available
    Text: 2SJ567 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ567 Switching Applications Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SJ567 2SJ567

    Untitled

    Abstract: No abstract text available
    Text: 2SJ567 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ567 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SJ567

    2SJ567

    Abstract: No abstract text available
    Text: 2SJ567 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ567 Switching Applications Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications 5.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SJ567 2SJ567

    2SJ567

    Abstract: No abstract text available
    Text: 2SJ567 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ567 Switching Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) •


    Original     		PDF 2SJ567 2SJ567

    2SJ567

    Abstract: j567
    Text: 2SJ567 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ567 Industrial Applications Switching Applications Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)


    Original     		PDF 2SJ567 2SJ567 j567

    2SJ567

    Abstract: No abstract text available
    Text: 2SJ567 東芝電界効果トランジスタ シリコンPチャネルMOS形 π-MOSV 2SJ567 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 単位: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 • オン抵抗が低い。


    Original     		PDF 2SJ567 2SJ567

    2SJ567

    Abstract: No abstract text available
    Text: 2SJ567 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ567 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SJ567 2SJ567

    2SJ567

    Abstract: TR2045
    Text: 2SJ567 東芝電界効果トランジスタ シリコンPチャネルMOS形 π-MOSV 2SJ567 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 単位: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 漏れ電流が低い。


    Original     		PDF 2SJ567 2SJ567 TR2045

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    MOSFET TOSHIBA 2SK2917

    Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
    Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6


    Original     		PDF DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		PDF BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ567 TOSHIBA Field Effect Transistor TEN TA TIVE] Silicon P Channel MOS Type ji-M OSV 2SJ567 Switching Applications Chopper Regulator, D C -D C Converter and Motor Drive Applications Features • Low drain-source ON resistance: R d S (ON) = 1.6 £2 (typ.)


    OCR Scan     		PDF 2SJ567