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Fastener Technology Corp FT1182SK-10-11C
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2SK101 Datasheets (77)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK1010	Collmer Semiconductor	MOSFET Transistors	Scan	PDF
2SK1010	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK1010	Unknown	FET Data Book	Scan	PDF
2SK1010-01	Collmer Semiconductor	MOSFET Transistors	Scan	PDF
2SK1010-01	Collmer Semiconductor	F-II, FAP, F-III, F-V Series Modules	Scan	PDF
2SK1010-01	Collmer Semiconductor	FAP-II Series / FAP-IIIA Series MOSFETS	Scan	PDF
2SK1010-01	Unknown		Scan	PDF
2SK1011	Collmer Semiconductor	MOSFET Transistors	Scan	PDF
2SK1011	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK1011	Unknown		Scan	PDF
2SK1011	Unknown	FET Data Book	Scan	PDF
2SK1011-01	Collmer Semiconductor	FAP-II Series / FAP-IIIA Series MOSFETS	Scan	PDF
2SK1011-01	Fuji Electric	N-Channel Silicon Power MOSFET	Scan	PDF
2SK1012	Collmer Semiconductor	MOSFET Transistors	Scan	PDF

2SK1012	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK1012	Unknown	FET Data Book	Scan	PDF
2SK1012-01	Collmer Semiconductor	MOSFET Transistors	Scan	PDF
2SK1012-01	Collmer Semiconductor	F-II, FAP, F-III, F-V Series Modules	Scan	PDF
2SK1012-01	Collmer Semiconductor	FAP-II Series / FAP-IIIA Series MOSFETS	Scan	PDF
2SK1012-01	Fuji Electric	N-channel Silicon Power MOSFET	Scan	PDF

2SK101 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK1017 Abstract: No abstract text available Text: 2SK1017 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-3P Applications Switching regulators UPS DC-DC converters	Original	PDF	2SK1017 SC-65 2SK1017
Untitled Abstract: No abstract text available Text: 2SK1017-01 N-channel MOS-FET F-II Series 450V > Features - 0,35Ω 20A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators	Original	PDF	2SK1017-01
Untitled Abstract: No abstract text available Text: 2SK1018 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)	Original	PDF	2SK1018
Untitled Abstract: No abstract text available Text: 2SK1013-01 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)30 I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)39 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)	Original	PDF	2SK1013-01
Untitled Abstract: No abstract text available Text: 2SK1013 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)30 I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)39 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)	Original	PDF	2SK1013
TCH-80 Abstract: CTU100 2SK1019 Text: 2SK1019 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-3PL ø3.2 ±0.2 5 ±0.3 3 ±0.2 2 ±0.2 1.1 ±0.2 Applications	Original	PDF	2SK1019 TCH-80 CTU100 2SK1019
2SK1017 Abstract: SC-65 Text: 2SK1017 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-3P Applications Switching regulators UPS DC-DC converters	Original	PDF	2SK1017 SC-65 2SK1017 SC-65
2sk129 Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131 Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119	Original	PDF	2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2sk129 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
2SK1014 Abstract: No abstract text available Text: 2SK1014-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-3P Applications Switching regulators UPS DC-DC converters	Original	PDF	2SK1014-01 SC-65 2SK1014
2SK1012 Abstract: No abstract text available Text: 2SK1012 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)35 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100# Minimum Operating Temp (øC)	Original	PDF	2SK1012
Untitled Abstract: No abstract text available Text: 2SK1017-01 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)30 I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)55 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)	Original	PDF	2SK1017-01
2SK1011 Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211 Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M	OCR Scan	PDF	2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1011 2SK1013-01 2SK1222-01 2sk1211
wt1e Abstract: 2SK 93 Text: 2SK1013-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V USS = ± 3 0 V Guarantee • Avalanche-proof	OCR Scan	PDF	2SK1013-01 wt1e 2SK 93
2sk1507 Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M	OCR Scan	PDF	2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2sk1507 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1013-01

2SK1011 Abstract: mosfet 2sk 2sk mosfet 2SK series Text: 2SK1011-01 FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET F -II SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V Gss = ± 30V Guarantee • Avalanche-proof	OCR Scan	PDF	2SK1011 sc-65 Tc-25Â eats30 mosfet 2sk 2sk mosfet 2SK series
2SK1012 Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M	OCR Scan	PDF	2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1012 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102
diode Sr Abstract: 2SK1017-01 1D-10A Text: FUJI 2SK1017-01 F-ll Series eujMsirLtìUE N-channel MOS-FET 450V 0,35Q 20A 150W > Features > Outline Drawing - H ig h S p e e d Sw itching - L o w O n -R e s is ta n c e - N o S e c o n d a ry B rea k d o w n - L o w D riving P o w e r - H ig h V o lta g e	OCR Scan	PDF	2SK1017-01 diode Sr 1D-10A
2SK1015-01 Abstract: mosfet 2sk Text: 2SK1015-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V r,ss = ± 30V Guarantee	OCR Scan	PDF	2SK1015-01 2SK1015-01 mosfet 2sk
Untitled Abstract: No abstract text available Text: <s MOSFETs FAP-II Series V G S ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2 S K 1 006-01M 2 S K 1 007-01 2 SK 1 009-01 2 S K 1 386-01 2 S K 1 0 1 1-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2 SK 1 008-01	OCR Scan	PDF	2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01
Untitled Abstract: No abstract text available Text: 2SK1017-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-II SERIES lOutline Drawings • Features • High speed sw itching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 3 0 V Guarantee	OCR Scan	PDF	2SK1017-01 SC-65
2SK1019 Abstract: mosfet 2sk Text: 2SK1019 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features R\|ES j j lOutline Drawings • High speed switching • Lew on-resistance • No secondary breakdown • Lew driving power • High voltage • V c s s ~ ± 3 0 V Guarantee ■Applications	OCR Scan	PDF	2SK1019 Tc-25Â 2SK1019 mosfet 2sk
ET412 Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082 Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646	OCR Scan	PDF	2SB1532 2SC3821 2SC3822 2SC3865 2SC3886 2SC4383 2SC4507 2SC4508 2SD1726 2SD1740 ET412 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
2SK1101-01M Abstract: 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1015-01 2SK1386-01 Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01	OCR Scan	PDF	2SK1006-01M T0220F15 2SK1007-01 T0220 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01
H1h fet Abstract: TEA 1019 2SK1019 2sk 30A MOSFET Diode LT 450 Text: 2SK1019 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features R\|ES j j lOutline Drawings • High speed switching • Lew on-resistance • No secondary breakdown • Lew driving power • High voltage • V c s s ~ ± 3 0 V Guarantee ■Applications	OCR Scan	PDF	2SK1019 Tc-25Â H1h fet TEA 1019 2SK1019 2sk 30A MOSFET Diode LT 450

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2SK101 Price and Stock

Fastener Technology Corp FT1182SK-10-11C

Fuji Electric Co Ltd 2SK1016-01

Samtec Inc RF316-04BJ3-02SK1-0150

2SK101 Datasheets (77)

2SK101 Datasheets Context Search

2SK1017

Untitled

Untitled

Untitled

Untitled

TCH-80

2SK1017

2sk129

2SK1014

2SK1012

Untitled

2SK1011

wt1e

2sk1507

2SK1011

2SK1012

diode Sr

2SK1015-01

Untitled

Untitled

2SK1019

ET412

2SK1101-01M

H1h fet