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    2SK1847 Price and Stock

    Rochester Electronics LLC 2SK1847-TB-E

    NCH 4V DRIVE SERIES
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    DigiKey 2SK1847-TB-E Bulk 3,000
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    onsemi 2SK1847-TB-E

    2SK1847 - NCH 4V DRIVE SERIES '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK1847-TB-E 3,000 1
    • 1 $0.0975
    • 10 $0.0975
    • 100 $0.0917
    • 1000 $0.0829
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    2SK1847 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1847 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1847 Sanyo Semiconductor Very High-Speed Switching Applications Scan PDF
    2SK1847 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan PDF
    2SK1847 Sanyo Semiconductor CP Type Transistors Scan PDF

    2SK1847 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK1847 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V) I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC)


    Original     		PDF 2SK1847

    2SK1847

    Abstract: No abstract text available
    Text: Ordering number:EN4505 N-Channel Silicon MOSFET 2SK1847 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SK1847] 0.16 0.95 0.95 2 1.9 2.9


    Original     		PDF EN4505 2SK1847 2SK1847] 2SK1847

    2SK1847

    Abstract: AN 7823
    Text: Ordering number:EN4505 N-Channel Silicon MOSFET 2SK1847 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SK1847] 0.16 0.95 0.95 2 1.9 2.9


    Original     		PDF EN4505 2SK1847 2SK1847] 2SK1847 AN 7823

    2SK1885

    Abstract: 2SK2437 2SK2438
    Text: 0 ID Series Lineup VDSS = 30V, N-channel Absolute maximum ratings atT a= 25°C Typelto. Package Voss V 2SK1847 (V) CP 2SK1467 2SK1724 VGSS ±15 •o (A) m 0.5 0.25* 2.0 1.0 PCP 2SK2437 i2 0 2SK1468 P d* VGS(off) min to max (V) 1.0 to 2.0 3.5 2.0 4.0 Electrical characteristics atTa = 25°C


    OCR Scan     		PDF 2SK1847 2SK1467 2SK1724 2SK2437 2SK1468 2SK1469 2SK2046 2SK2438 2SK2439 2SK2555 2SK1885

    2SK1847

    Abstract: No abstract text available
    Text: Ordering number: EN4505 _ 2SK1847 No.4505 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings at Ta = 25C’C Drain-to-Source Voltage


    OCR Scan     		PDF EN4505 2SK1847 2SK1847

    2sk77

    Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
    Text: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications


    OCR Scan     		PDF 250mm 2SK212, 2SK315, 2SK544, 2SK669, 2SK1841 2SK2270. 2SK304, 2SK404, 2SK427, 2sk77 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j

    2SK2747

    Abstract: 2SK2748 2SJ403 2SK536 2SK1467 2SJ254 2SJ255 2SJ256 2SJ263 2SJ264
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 251C RDS(on)@ID ' VGS W Voss (V) ID (A) PD (W) Teh 0« V 6^*> RDS(on) max(Q) to |Yf»| VDS • M> (A) Vgs (V) VDS 00 to (A) 2SJ282


    OCR Scan     		PDF Ta-25t) 2SJ282 T0220 2SJ348 2SJ478V 2SJ254 T0220ML 2SJ255 2SK2747 2SK2748 2SJ403 2SK536 2SK1467 2SJ256 2SJ263 2SJ264

    J289

    Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
    Text: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications


    OCR Scan     		PDF Sma11-sized 2SK1839< 2SK536 2SK1840UJ) 3SK248CNJ) 2SK669 2SK1841 2SK583 Characteristics/Ta-25X; 12/55m J289 3SK266 2SK1728 3sk251 DS-17 SANYO

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


    OCR Scan     		PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124

    2SK968

    Abstract: 2SK1375 2sk2073 2SK1747 2SK333 2SK544 2SK937 2SK669 2SK332 2SK715
    Text: b3E » • 7Ti7G7b 0012422 T2Û « T S A J S A 0 Y O Small-signal F e a t u r e s FETs Case Outlines unit-'mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. *Very low noise figure * Large lYfsl * Low gate leak current * Smal1-si zed package permitting FET-used sets to be made smaller


    OCR Scan     		PDF 250mm 2SK2170 2SK1068CB) 2SK1069CFJ) 2SK1332 2SK1375CC) 2SK209KH) 2SK212, 2SK315, 2SK544. 2SK968 2SK1375 2sk2073 2SK1747 2SK333 2SK544 2SK937 2SK669 2SK332 2SK715

    2SK22

    Abstract: SGF23
    Text: 2SK.2SJ Ty p e Lists for* Type No . 1nd ioat 1on on Di odes and Hal 1 E 1ements. type, 3SK,SVC,pin d i o d e S . B . D . G a A s SBD, FET SW D i o d e No. 2SK242 2SK283 2 SK 303 2SK436 2SK443 2 SK 53 6 2SK543 2SK545 2SK771 2 SK 84 8 2SK93 1 2SK932 2SK968 2SK10 65


    OCR Scan     		PDF 2SK242 2SK283 2SK436 2SK443 2SK543 2SK545 2SK771 2SK93 2SK932 2SK968 2SK22 SGF23

    2SK2437

    Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
    Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process


    OCR Scan     		PDF MT980624TR 2SK2437 CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking

    SK968

    Abstract: 2SK937 2SK544 2SK669 2SJ286 2SK5 2SK212 2SK543 2SK436 2SK715
    Text: Smal 1-signal SA*YO FETs Features ♦ Very low noise figure * Large IYfsI * Low gate leak current Case Outlines unit¡mm SANYO:SMCP ♦ Small-sized package permitting FET-used sets to be made smaller l¡Source, 2¡Drain, 3¡Gate, i LF ),Low Noise,Analog Switch,Impedance Conversion Applications


    OCR Scan     		PDF 250mm ics/Ta-25 2SK212 2SK315 2SK544 2SK669, 2SK1841 2SK2270. 2SK304, 2SK427, SK968 2SK937 2SK669 2SJ286 2SK5 2SK543 2SK436 2SK715

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch


    OCR Scan     		PDF 2SJ284* 2SJ286* 2SK1847 2SJ285* 2SJ233 2SK1731 2SK1732 2SK1734 2SK1735 DD14SSD

    2SK2153

    Abstract: 2SJ332S
    Text: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^


    OCR Scan     		PDF 2SJ381 2SJ382 2SJ383 2SJ419 2SJ42Q 2SK2316 2SK2317 2SK2318 2SK2440 2SK2441 2SK2153 2SJ332S