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Panasonic Electronic Components 2SK275100L JFET N-CH 10MA MINI3-G1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK275100L	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.1188	Buy Now
	2SK275100L	Digi-Reel			1	1 $0.3 10 $0.3 100 $0.3 1000 $0.3 10000 $0.3	Buy Now
	2SK275100L	Cut Tape			1	1 $0.3 10 $0.3 100 $0.3 1000 $0.3 10000 $0.3	Buy Now
Hitachi Ltd 2SK2752WV-TL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK2752WV-TL		2,400			1 $3.6 10 $3.6 100 $3.6 1000 $1.98 10000 $1.8	Buy Now
Vyrian	2SK2752WV-TL		384			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK2750 SILICON N CHANNEL MOS TYPE (PI-MOSV) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 3.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK2750		30			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SK275 Datasheets (51)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK275	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
2SK275	Unknown	FET Data Book	Scan	PDF
2SK2750	Toshiba	FETs - Nch 500V	Original	PDF
2SK2750	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
2SK2750	Toshiba		Original	PDF
2SK2750	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK2750	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SK2750	Toshiba	Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V)	Scan	PDF
2SK2750	Toshiba	Silicon N-channel MOS type field effect transistor for high speed, high current switching applications, chopper regulator,DC-DC converter and motor drive applications	Scan	PDF
2SK2751	Panasonic	TRANS JFET N-CH 0.0047A 3MINI3-G1	Original	PDF
2SK2751	Panasonic	Silicon N-Channel Junction FET	Original	PDF
2SK2751	Panasonic	N-Channel Junction FET	Original	PDF
2SK2751	Panasonic	FETs, IPD, IGBTs, GaAs MMICs	Original	PDF
2SK2751	Panasonic	Silicon N-Channel Junction FET	Original	PDF

2SK275100L	Panasonic	JFETs (Junction Field Effect), Discrete Semiconductor Products, JFET N-CH 10MA 200MW MINI-3	Original	PDF
2SK2753-01	Fuji Electric	N-channel MOS-FET	Original	PDF
2SK2753-01	Fuji Electric	TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,5A	Scan	PDF
2SK2754-01L	Fuji Electric	MOSFET / Power MOSFET Selection Guide	Original	PDF
2SK2754-01L	Fuji Electric	N-channel MOS-FET	Original	PDF
2SK2754-01L	Fuji Electric	Power MOSFET	Scan	PDF

2SK275 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SK2758-01L,S N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications	Original	2SK2758-01L	PDF
mosfet 300V 10A datasheet Abstract: No abstract text available Text: 2SK2757-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply	Original	2SK2757-01 O-220AB mosfet 300V 10A datasheet	PDF
2SK2756-01R Abstract: No abstract text available Text: 2SK2756-01R N-channel MOS-FET FAP-IIS Series 450V > Features - 0,45Ω 18A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -	Original	2SK2756-01R 2SK2756-01R	PDF
2SK2757-01 Abstract: No abstract text available Text: 2SK2757-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators	Original	2SK2757-01 2SK2757-01	PDF
2sk2756 equivalent Abstract: No abstract text available Text: 2SK2756-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply	Original	2SK2756-01R 2sk2756 equivalent	PDF
Untitled Abstract: No abstract text available Text: 2SK2759-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply	Original	2SK2759-01R	PDF
Untitled Abstract: No abstract text available Text: 2SK2758-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings T-pack S T-pack (L) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)	Original	2SK2758-01L	PDF
2SK2755-01 Abstract: No abstract text available Text: 2SK2755-01 N-channel MOS-FET FAP-IIS Series 450V > Features - 0,45Ω 18A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -	Original	2SK2755-01 2SK2755-01	PDF
Untitled Abstract: No abstract text available Text: 2SK2757-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply	Original	2SK2757-01 O-220AB	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For impedance conversion in low frequency For pyroelectric sensor • Package ■ Features	Original	2002/95/EC) 2SK2751	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For pyroelectric sensor 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 0.4±0.2	Original	2002/95/EC) 2SK2751	PDF
Untitled Abstract: No abstract text available Text: 2SK2754-01L,S N-channel MOS-FET FAP-IIS Series 450V > Features - 0,65Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications	Original	2SK2754-01L	PDF
Untitled Abstract: No abstract text available Text: 2SK2759-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings 15.5 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 Applications 3.2 +0.3 Switching regulators UPS Uninterruptible Power Supply DC-DC converters ±0.3 20 Min	Original	2SK2759-01R	PDF
2SK2751 Abstract: JISC7030 Text: Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05	Original	2SK2751 2SK2751 JISC7030	PDF

"N-Channel JFET" Abstract: list of n channel fet Jfet n-channel JFET sot23 JFET application note 2SK2751 pyro Text: UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET FEATURES * Low noise-figure NF . * High gate to drain voltage VGDO. APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor. *Pb-free plating product number:2SK2751L	Original	2SK2751 2SK2751L 2SK2751-AE3-R 2SK2751L-AE3-R 2SK2751-AL3-R 2SK2751L-AL3-R OT-23 OT-323 QW-R206-067 "N-Channel JFET" list of n channel fet Jfet n-channel JFET sot23 JFET application note 2SK2751 pyro	PDF
2sk2774 Abstract: TO220F15 2SK3271 2sk2251 to 220f15 TO-220F15 2sk1818 2sk2954 2SK2255 2sk2098 Text: VDSS 100 to 250 volts Series Package Drain-source voltage VDSS Voltage 100 F-I series TO-3P F-II series T-Pack FAP-II series TO-220AB 120 150 200 250 2SK2753(50,0.032) 2SK2849(18,0.18) 2SK2519(10,0.4) 2SK2521(18,0.18) 2SK2520(10,0.4) 2SK2522(18,0.18) TO-220F15	Original	O-220AB 2SK2753 2SK2849 2SK2519 2SK2521 2SK2520 2SK2522 O-220F15 2SK2250 2SK2292 2sk2774 TO220F15 2SK3271 2sk2251 to 220f15 TO-220F15 2sk1818 2sk2954 2SK2255 2sk2098	PDF
2SK2759-01R Abstract: No abstract text available Text: 2SK2759-01R N-channel MOS-FET FAP-IIS Series 500V > Features - 0,55Ω 15A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -	Original	2SK2759-01R 2SK2759-01R	PDF
2SK2755-01 Abstract: No abstract text available Text: 2SK2755-01 N-channel MOS-FET FAP-IIS Series 450V > Features - 0,45Ω 18A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -	Original	2SK2755-01 2SK2755-01	PDF
2SK2751 Abstract: n-channel JFET sot23 Text: UTC 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET FEATURES Low noise-figure NF . High gate to drain voltage VGDO. APPLICATIONS For impedance conversion in low frequency. For pyroelectric sensor. 1 2 MARKING SYMBOL 3 HS SOT-23 1: DRAIN 2: SOURCE 3: GATE	Original	2SK2751 OT-23 QW-R206-067 2SK2751 n-channel JFET sot23	PDF
2SK2751 Abstract: JISC7030 Text: Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.65) ● Low noise-figure (NF) ● High gate to drain voltage VGDO	Original	2SK2751 2SK2751 JISC7030	PDF
2SK2758-01L Abstract: 2U 73 diode Text: FU JI 2SK2758-01L,S N-channel MOS-FET FAP-IIS Series > Features - 50 0V 0 ,9 Q 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated T-RA.CK S	OCR Scan	2SK2758-01L 00047DS 2U 73 diode	PDF
EFL 233 Abstract: 2SK2757-01 n4570 Text: F U JI ölüMeulßäUG 2SK2757-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0 ,9 Q 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated	OCR Scan	2SK2757-01 O-220AB EFL 233 n4570	PDF
Untitled Abstract: No abstract text available Text: Panasonic Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction For impedance conversion in low frequency For pyro-electric sensor 2 . 8 - 0.3 + 0.25 1 . 5 - 0.05 0.65±0.15 • Features Parameter Gate-Drain voltage Drain current Gate current	OCR Scan	2SK2751 O-236 SC-59 C7030,	PDF
Untitled Abstract: No abstract text available Text: TO SH IB A 2SK2750 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2750 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm	OCR Scan	2SK2750 100//A	PDF

2SK275 Search Results

2SK275 Price and Stock

Panasonic Electronic Components 2SK275100L

Hitachi Ltd 2SK2752WV-TL

Toshiba America Electronic Components 2SK2750

2SK275 Datasheets (51)

2SK275 Datasheets Context Search

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mosfet 300V 10A datasheet

2SK2756-01R

2SK2757-01

2sk2756 equivalent

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2SK2755-01

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2SK2751

"N-Channel JFET"

2sk2774

2SK2759-01R

2SK2755-01

2SK2751

2SK2751

2SK2758-01L

EFL 233

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