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Toshiba America Electronic Components 2SK2916(F) MOSFET N-CH 500V 14A TO3PIS
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DigiKey	2SK2916(F)	Tube			50	1 - 10 - 100 $2.8132 1000 $2.8132 10000 $2.8132	Buy Now
Toshiba America Electronic Components 2SK2916F FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (TT-MOSV) Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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ComSIT USA	2SK2916F		49			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SK2916 Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK2916	Toshiba	FETs - Nch 250V	Original	PDF
2SK2916	Toshiba		Original	PDF
2SK2916	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
2SK2916	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK2916	Toshiba	Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V)	Scan	PDF
2SK2916	Toshiba	Silicon N-channel MOS type field effect transistor for high speed, high voltage switching, DC-DC converter, relay drive & motor drive applications	Scan	PDF
2SK2916(F)	Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 14A TO-3PN	Original	PDF

2SK2916 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SK2916 Abstract: K2916 Text: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 11 S (typ.)	Original	2SK2916 2SK2916 K2916	PDF
K2916 Abstract: No abstract text available Text: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 11 S (typ.)	Original	2SK2916 K2916	PDF
2SK2916 Abstract: No abstract text available Text: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) l High forward transfer admittance : \|Yfs\| = 11 S (typ.)	Original	2SK2916 2SK2916	PDF
Untitled Abstract: No abstract text available Text: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) High forward transfer admittance : \|Yfs\| = 11 S (typ.)	Original	2SK2916	PDF
K2916 Abstract: TOSHIBA K2916 2SK2916 Text: 2SK2916 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅤ 2SK2916 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用単位: mm : RDS (ON) = 0.35Ω (標準) z オン抵抗が低い。	Original	2SK2916 10VID 2-16F1B K2916 2002/95/EC) K2916 TOSHIBA K2916 2SK2916	PDF
K2916 Abstract: 2SK2916 Text: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) High forward transfer admittance : \|Yfs\| = 11 S (typ.)	Original	2SK2916 K2916 2SK2916	PDF
Untitled Abstract: No abstract text available Text: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) High forward transfer admittance : \|Yfs\| = 11 S (typ.)	Original	2SK2916	PDF
K2916 Abstract: TOSHIBA K2916 2SK2916 Text: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 11 S (typ.)	Original	2SK2916 K2916 TOSHIBA K2916 2SK2916	PDF
5252 F 1009 4-pin Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025 Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original		PDF
Toshiba TMPA8873 Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853 Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6	Original	SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853	PDF
2SK2056 Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1	Original	BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078	PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640	PDF
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312	PDF
MOSFET TOSHIBA 2SK2917 Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6	Original	DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent	PDF

2SK3878 equivalent Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718 Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)	Original	2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
TA1343NG Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122 Text: システムカタログシステムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理伝送処理	Original	p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122	PDF
2SK4207 Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 Text: 製品カタログ 2009-9 東芝半導体製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3	Original	BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03	PDF
TPCA8064 Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA8077 TPCA8028 Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original	BCE0082B TPCA8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA8077 TPCA8028	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
K2916 Abstract: No abstract text available Text: TOSHIBA 2SK2916 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2916 IGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 15.8±0.5 • • •	OCR Scan	2SK2916 K2916	PDF
K2916 Abstract: 2SK2916 ED 03 Diode Text: TO SH IBA 2SK2916 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2916 IGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Source ON Resistance : RßS (ON) = 0.35 ü, (Typ.)	OCR Scan	2SK2916 K2916 2SK2916 ED 03 Diode	PDF
2SK2916 Abstract: No abstract text available Text: TOSHIBA 2SK2916 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2916 IGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance INDUSTRIAL APPLICATIONS U nit in mm	OCR Scan	2SK2916 2SK2916	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK2916 T O SH IB A FIELD EFFECT TR A N SISTO R SILICO N N C H A N N E L M OS T Y P E tt-M O S V 2SK2916 IGH SPEED, HIGH V O LT A G E SW ITCH IN G A PP LIC A TIO N S D C-D C CO N V ER TER , R E LA Y DRIVE A N D M O TO R DRIVE A PP LIC A TIO N S	OCR Scan	2SK2916	PDF

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2SK2916 Search Results

2SK2916 Price and Stock

Toshiba America Electronic Components 2SK2916(F)

Toshiba America Electronic Components 2SK2916F

2SK2916 Datasheets (7)

2SK2916 Datasheets Context Search

2SK2916

K2916

2SK2916

Untitled

K2916

K2916

Untitled

K2916

5252 F 1009 4-pin

Toshiba TMPA8873

2SK2056

fqp60n06

STR-G6551

MOSFET TOSHIBA 2SK2917

2SK3878 equivalent

IGBT GT30F124

TA1343NG

2SK4207

TPCA*8064

GT30F124

K2916

K2916

2SK2916

Untitled