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    2SK414 Price and Stock

    Rochester Electronics LLC 2SK4144-AZ

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK4144-AZ Bulk 102
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    • 1000 $2.94
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    Rochester Electronics LLC 2SK4146-S19-AY

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK4146-S19-AY Bulk 249
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    • 1000 $1.21
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    Renesas Electronics Corporation 2SK4146-S19-AY

    Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK4146-S19-AY 34,909 276
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    Rochester Electronics 2SK4146-S19-AY 34,909 1
    • 1 $1.16
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    • 100 $1.09
    • 1000 $0.986
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    Renesas Electronics Corporation 2SK4144(0)-S12-AZ

    MOS FIELD EFFECT TRANSISTOR
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    Verical 2SK4144(0)-S12-AZ 735 75
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    Rochester Electronics 2SK4144(0)-S12-AZ 735 1
    • 1 $4.13
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    • 100 $3.88
    • 1000 $3.51
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    Renesas Electronics Corporation 2SK4144-AZ

    Power Field-Effect Transistor, 70A, 60V, N-Channel MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK4144-AZ 570 1
    • 1 $2.83
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    • 100 $2.66
    • 1000 $2.41
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    Find more 2SK414 price and stock on Findchips.com

    2SK414 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK414 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK414 Unknown FET Data Book Scan PDF
    2SK414 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK414 Unknown SILICON N-CHANNEL MOS FET Scan PDF
    2SK414 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK414 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK414 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK414 Renesas Technology TRANSISTOR,MOSFET,N-CHANNEL,140V V(BR)DSS,8A I(D),TO-247VAR Scan PDF
    2SK4143 NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF
    2SK4143-S17-AY NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF

    2SK414 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4148 SWITCHING N-CHANNEL MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4148 is a switching element that is most suitable for use in φ 5.2 MAX. DC-DC converter whose DC input voltage is 24 to 48 V. 5.5 MAX.


    Original     		2SK4148 2SK4148 PDF

    2SJ110

    Abstract: 2sj118 t1511
    Text: bl E D • MMTbSGS 0D1ST17 570 ■ H I T M 2 S J118 , 2 S J110 H I T A C H I / OPTOELECTRONICS *3.!±02 SILICON P-CHANNEL MOS FET - HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK413, 2SK414 ■ FEATURES • Low On-Resistance.


    OCR Scan     		0D1ST17 2SK413, 2SK414 44Tb5DS 2SJ118 2SJ119 2SJ110 t1511 PDF

    2sk4148

    Abstract: D1874 2SK4148-T-AZ 2SK4148-AZ SC-43A 2SK41
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4148 SWITCHING N-CHANNEL MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4148 is a switching element that is most suitable for use in φ 5.2 MAX. DC-DC converter whose DC input voltage is 24 to 48 V. 5.5 MAX.


    Original     		2SK4148 2SK4148 D1874 2SK4148-T-AZ 2SK4148-AZ SC-43A 2SK41 PDF

    2SK4146

    Abstract: 2SK4146-S19 R07DS0130EJ0100
    Text: Preliminary Data Sheet 2SK4146 R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A)


    Original     		2SK4146 R07DS0130EJ0100 2SK4146 2SK4146-S19-AY O-220, 2SK4146-S19 R07DS0130EJ0100 PDF

    transistor K4145

    Abstract: 2SK4145 nec k4145 k4145 k4145 NEC fet K4145 transistor 2sk4145 2SK4145-S19-AY transistor d 1302 K4145 DATASHEET
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 10 mΩ MAX. (VGS = 10 V, ID = 42 A)


    Original     		2SK4145 2SK4145 2SK4145-S19-AY O-220 transistor K4145 nec k4145 k4145 k4145 NEC fet K4145 transistor 2sk4145 2SK4145-S19-AY transistor d 1302 K4145 DATASHEET PDF

    d1941

    Abstract: K4144 2SK4144 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR transistor K4144 ke marking transistor P300 2SK41
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4144 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK4144-AZ LEAD PLATING Note


    Original     		2SK4144 2SK4144 2SK4144-AZ 2SK4144-S12-AZ O-220 d1941 K4144 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR transistor K4144 ke marking transistor P300 2SK41 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 2SK4146 R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A)


    Original     		2SK4146 R07DS0130EJ0100 2SK4146 2SK4146-S19-AY O-220, PDF

    2SK425

    Abstract: 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 2SK417 2SK418


    Original     		2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK425 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433 PDF

    2SK425

    Abstract: 2sk423 2SK424 2SK530 2SK422 2SK426 2SK407 2SK425-13 2SK428 2SK433
    Text: A f m s 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 L (S) 2SK417 2SK418 2SK419 2SK420 2SK421 2SK422 2SK423 2SK424 2SK425 2SK426 2SK427 2SK428 2SK429(L)(S) 2SK430(L) (S) 2SK431 ' 2SK433 2SK435 2SK436 2SK437 a NEC NEC U aL BÍL


    OCR Scan     		2SK406 2SK407 2SK408 2SK409 2SK410 2SK531 2SK421 2SK422 2SK423 2SK424 2SK425 2sk423 2SK424 2SK530 2SK422 2SK426 2SK425-13 2SK428 2SK433 PDF

    transistor K4145

    Abstract: 2sk4145
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 10 mΩ MAX. (VGS = 10 V, ID = 42 A)


    Original     		2SK4145 2SK4145 2SK4145-S19-AY O-220 transistor K4145 PDF

    K4143

    Abstract: TRANSISTOR K4143 D1877 transistor equivalent k4143 2SK4143 NEC TRANSISTOR MARKING CODE k414 2SK4143-S17-AY code marking NEC marking transistor KE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4143 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4143 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on 1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A)


    Original     		2SK4143 2SK4143 2SK4143-S17-AY O-220 K4143 TRANSISTOR K4143 D1877 transistor equivalent k4143 NEC TRANSISTOR MARKING CODE k414 2SK4143-S17-AY code marking NEC marking transistor KE PDF

    2SK4147

    Abstract: 2SK4147-T1B-AT MARKING X.R 2sk4147t1b MARKING XR 2SK41 D1874
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4147 SWITCHING N-CHANNEL MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4147 is a switching element that is most suitable for use in DC-DC converter whose DC input voltage is 24 to 48 V. Having low on-resistance, excelling in the switching characteristics,


    Original     		2SK4147 2SK4147 2SK4147-T1B-AT MARKING X.R 2sk4147t1b MARKING XR 2SK41 D1874 PDF

    2sk4145

    Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
    Text: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current


    Original     		SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919 PDF

    2sk4145

    Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080
    Text: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)


    Original     		SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080 PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    RJH60F7

    Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
    Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to


    Original     		RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652 PDF

    2SK4145

    Abstract: K4145
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 PDF

    2SK4147

    Abstract: 2sk414
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2sj111

    Abstract: 2SJ131 2SJ112 2SJ110 2SJ122 2SK722 2SJ121 2sj135 2SJ106 2SJ129
    Text: - 18 - §ü % tt € m tit ià ië f f j II =e 1 K 2SJ106 L F A, A - S W 2SJ107 L F A, A ~ S W j fë £ V* V * t* (V) ft * W. X I* ft (A) P d/ Pc h (max) (A) (W) M 4# te (max) (V) Vd s (V) (Ta=25Tï) I gss Vg s (V) (min) (A) (max) V d s (A) (V) (min) (V)


    OCR Scan     		2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 100kQ, 2SJ129 2SJ130 2SK722 2SJ131 2sj111 2SJ131 2SJ112 2SJ110 2SJ122 2SJ121 2sj135 2SJ106 2SJ129 PDF

    MPA2733GR

    Abstract: MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		O-263 O-252 mPA672T. mPA675T. mPA677TB. mPA678TB. mPA679TB. M8E0710J D18669JJ3V0SG D18669JJ3V0SG003 MPA2733GR MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG PDF

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


    OCR Scan     		O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297 PDF

    R2A11301FT

    Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas
    Text: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV


    Original     		/533MHz BGA-832 BGA-472 BGA-429 BGA-720 BGA-653 R2A11301FT SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas PDF

    hitachi mosfet power amplifier audio application

    Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
    Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3


    OCR Scan     		RE79-24 hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56 PDF