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Rubycon Corporation 500USK820MEFCSN35X60 Aluminum Electrolytic Capacitors - Snap In GENERAL PURPOSE ELECTROLYTIC CAPACITORS
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Mouser Electronics	500USK820MEFCSN35X60					1 $17.87 10 $16.54 100 $12.87 1000 $11.89 10000 $11.89	Get Quote
Rubycon Corporation 400USK820MEFCSN30X50 Aluminum Electrolytic Capacitors - Snap In GENERAL PURPOSE ELECTROLYTIC CAPACITORS
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Mouser Electronics	400USK820MEFCSN30X50					1 - 10 - 100 $10.08 1000 $9.31 10000 $9.31	Get Quote
Rubycon Corporation 400USK820MEFCSN35X40 Aluminum Electrolytic Capacitors - Snap In GENERAL PURPOSE ELECTROLYTIC CAPACITORS
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Mouser Electronics	400USK820MEFCSN35X40					1 - 10 - 100 $10.33 1000 $9.54 10000 $9.54	Get Quote
Rubycon Corporation 420USK820MEFCSN35X45 Aluminum Electrolytic Capacitors - Snap In GENERAL PURPOSE ELECTROLYTIC CAPACITORS
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Mouser Electronics	420USK820MEFCSN35X45					1 - 10 - 100 $8.9 1000 $7.73 10000 $7.73	Get Quote
Rubycon Corporation 420USK820MEFCSN30X55 Aluminum Electrolytic Capacitors - Snap In GENERAL PURPOSE ELECTROLYTIC CAPACITORS
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Mouser Electronics	420USK820MEFCSN30X55					1 - 10 - 100 $11.01 1000 $10.17 10000 $10.17	Get Quote

2SK82 Datasheets (36)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK820	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SK820	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK820	Unknown	FET Data Book	Scan	PDF
2SK821	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SK821	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK821	Unknown	FET Data Book	Scan	PDF
2SK821	NEC	Fast switching N-channel silicon MOS field effect power transistor.	Scan	PDF
2SK822	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SK822	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK822	Unknown	FET Data Book	Scan	PDF
2SK823	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SK823	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK823	Unknown	FET Data Book	Scan	PDF
2SK823	NEC	Fast switching N-channel silicon MOS field effect power transistor.	Scan	PDF

2SK824	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SK824	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK824	Unknown	FET Data Book	Scan	PDF
2SK824	NEC	N-CHANNEL POWER MOS FET	Scan	PDF
2SK825	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SK825	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

2SK82 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SK829 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition)100u Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)	Original	2SK829	PDF
Untitled Abstract: No abstract text available Text: 2SK825 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition)100u Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)	Original	2SK825	PDF
Untitled Abstract: No abstract text available Text: 2SK822 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)22 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)90 Minimum Operating Temp (øC)	Original	2SK822	PDF
2sk82 Abstract: ifoc 2SK823 JI 32 Text: M O S Field E ffe ct P o w e r T ran sis to r 2SK823 N f t ^ N 7 -M O S I 2S K 823Ü , l f f l > h ^ > * T7 — MOS F E T ffii/CM S < , X - i -? -f > FET £\|-5f£[21 W Ì : mm T ? f • f l T Ü >), ÏÜJSÎÈX ^ <y -f > r « - i i 4 . 7 MA X . 15 . 7 M A X .	OCR Scan	2SK823 2sk82 ifoc 2SK823 JI 32	PDF
2SK828 Abstract: RQ100 2sk82 transistor 3884 Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK828 DESCRIPTION The 2SK828 is N-channel MOS Field Effect Power PACKAGE D IM EN SIO N S Transistor designed for switching power supplies DC-DC in m illim e te rs inches converters. FEATURES	OCR Scan	2SK828 2SK828 1987M RQ100 2sk82 transistor 3884	PDF
2sk82 Abstract: LM 3883 2SK826 Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK826 D E S C R IP T IO N The 2 S K 82 6 is N-channel MOS Field Effect Power P A C K A G E D IM E N S IO N S Transistor designed for switching power supplies, DC-DC in m illim eters inches	OCR Scan	2SK826 2SK826 2sk82 LM 3883	PDF
2SK822 Abstract: 2sk82 Text: M MOS o s M u n t t o ^ r ? - F ie ld E ffe ct P o w e r T ra n s is to r 2SK822 N ft^ ;U / '° 7 j i m 2S K8 2 2 i, FET m N f t i w i / X > A > X S > h M '''r7 — MOS F E T V V ffiÎÆ ^ fS < , 7 f > / m # -M O S X ' i v f- > (^ - ii 0 , it lH iS x ^	OCR Scan	2SK822li, TC-7502 2SK822 2sk82	PDF
lm575 Abstract: 2SK827 transistor DK RN lm5752 F1012 Text: N E C ELECTRONICS INC "t û 6427525 N E C ELECTRONICS DEI INC b45755S 98D MOS D O n O O l 19001 F I E L D D E F F E C T ELECTRON DP/ICS 7 \| T '- " 17-13 T R A N S I S T O R 2SK827 . F A S T S W I T C H I N G N - C H A N N E L S I L I C O N POW ER MOS F E T	OCR Scan	b4275ES Q11DD1 2SK827 T-39-13 LM57525 DD11D04 JS71CS J2263S lm575 2SK827 transistor DK RN lm5752 F1012	PDF
for1a Abstract: 2sk82 me75es JEC ELECTRONICS bms75g5 U511-1 Text: Tfl D Ë J ti4E7S5S □ D i a n a 6427525 N E C 3 ELECTRONICS ’v. ' 98D INC - •' 18993 ' ••“- .1 MOS D ./.•Vf'-^ -• ' F I E L D~ E F F E C T 'T R A X S I S T C F, ELECTH0N DEVICE 2SK82 F A S T S W I T C H I N G N - C H A N N E L ' S I L I CON	OCR Scan	23K82 73ANS U5--111 NECTCKJ22S3S for1a 2sk82 me75es JEC ELECTRONICS bms75g5 U511-1	PDF
pu45 Abstract: 2SK821 Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR EIECTRON DEVICE 2SK821 DESCRIPTION The 2SK821 is N-channel MOS Field E ffect Power Transistor PACKAGE DIMENSIONS designed fo r sw itching power supplies, DC-DC converters. FEATURES In m illim e te rs inches	OCR Scan	2SK821 2SK821 1987M pu45	PDF
transistor Bf 444 Abstract: transistor bf 324 TC-6305 3e tRANSISTOR 2SK824 T108 Text: M O S Field E ffe ct P o w e r T r a n s is to r N-7-+-^Mw<,7 — MOS F E T 7 A I i f f l 2SK824Ü, N f t :f / P - x > A > x ^ > l ' f / N , 7 - M O S FET W & m W i : mm - c & v , WHS D C -D C a •y j-y rm w , ft i t ° V DSS = 4 5 0 V , O'fS'+yffiiÆ	OCR Scan	2SK824 2SK824Ã 1X10857 transistor Bf 444 transistor bf 324 TC-6305 3e tRANSISTOR 2SK824 T108	PDF
2SK821 Abstract: AJE TI TEA-509 F111 100-1000W EIR94 Text: r — z S 7 • 5 / — h M O S ï ï 2 ,B # & j m ' < r7 - M O S Field E ffe c t P o w e r T ra n s is to r 2SK821 MOS F E T — i i f f 2SK821 i, ffifitM S < , F X -Î7 f > l FETT"^> 7 'fë 14 * fi l n t iJ ' , B 0 i X - i v f > W fê 'A \ m . (-^ -Ü	OCR Scan	2SK821 2SK821 AJE TI TEA-509 F111 100-1000W EIR94	PDF
for1a Abstract: eic73 2SK821 Text: 64 27 525 N E C ELEC TRO NIC S INC 98D 18989 3 tiME7S2S □□IfiTflT 1 \|"“ ••. . .,.r NEQm ' w ELECTRON DEVICE MO S y FIEL D P A C K A G E D IM E N S IO N S {Unit: mm _ _ _ _ _ _ " Jl T R A N S I S T G ?. 2SK821 / FAST S W IT C H IN G ft-CHANNEL	OCR Scan	bME7555 2SK821 J22566 for1a eic73 2SK821	PDF
FS 0245 Abstract: 2SK828 Text: M N f - ^ U - z ^ - M O O S S F F ie ld E E f f e c t P o w e r T r a n s is t o r T i i f f l 2SK828 ü , N j -ï ’ ï X - t > tm v î& 7 f y / m < , x D c - D c j 4 u ", * - y h i f P ^ V - MOS FET y => y ^ i s ' , ftw m m t ’• m m ) 4 - ^ s i à T - t o	OCR Scan	2SK828Ã TC-63070 FS 0245 2SK828	PDF

2SK820 Abstract: TD4001 TD400 Text: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK 820 The 2SK820 is N-channel MOS Field E ffect Power PACKAGE DIM EN SIO N S Transistor designed fo r sw itching power supplies, DC-DC in m illim e te rs (inches)	OCR Scan	2SK820 2SK820 1987M TD4001 TD400	PDF
K825 Abstract: 2SK825 Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK825 DESCRIPTION The 2SK825 is N-channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies, DC-DC converters. FEATURES in m illim e te rs inches «Suitable fo r switching power supplies, actuater controls,	OCR Scan	2SK825 1987M K825	PDF
2SK827 Abstract: No abstract text available Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK827 DESCRIPTION The 2 S K 8 2 7 is N -channel MOS Field E ffe c t Pow er T ransisto r PACKAGE DIMENSIONS designed fo r s w itc h in g p o w e r supplies, D C -D C converter. in m illim eters inches	OCR Scan	2SK827 2SK827 215X0 1987M	PDF
2SK824 Abstract: No abstract text available Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK824 The 2SK824 is N-channel MOS Field Effect Power Transistor designed fo r switching power supplies, DC-DC PACKAGE DIMENSIONS in m illim eters inches converters. FEATURES •	OCR Scan	2SK824 2SK824 1987M	PDF
2sk82 Abstract: 2SK823 Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK823 The 2SK823 is N-channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed for switching power supplies, DC-DC converters. FEATURES in m illim e te rs inches • Suitable for switching power supplies, actuater controls,	OCR Scan	2SK823 1987M 2sk82	PDF
2SK829 Abstract: 2sk82 Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK829 DESCRIPTION The 2SK829 is N-channel MOS Field E ffect Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies, DC-DC converters. FEATURES in m illim e te rs inches	OCR Scan	2SK829 1987M 2sk82	PDF
for1a Abstract: 2sk82 2SK829 T12N Text: N E C N E C ELECTRONICS 98D INC ELE CTR ONICS INC ~Tñ MOS 19005 D 7" — D Ë f\| 1 ^ 5 7 5 2 5 FIELD GDnDDS EFFECT 4 TRAXS ISTC." ELECTRON DEVICE 2SK82S F A S T S W I T C H I N G N - C H A N N E L S I L I C O N ' POW ER MOS F E T PACKAGE DIMENSIONS Features	OCR Scan	bMa75E5 2SK829 120ll T-39-13 Vos-10 J22686 for1a 2sk82 2SK829 T12N	PDF
2SK822 Abstract: TD-4002 TD400 Text: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK822 DESCRIPTION The 2SK822 is N-channel MOS Field E ffect Power Transistor designed fo r sw itching power supplies, DC-DC PACKAGE D IM EN SIO N S in m illim e te rs (inches)	OCR Scan	2SK822 2SK822 1987M TD-4002 TD400	PDF
2SK824 Abstract: No abstract text available Text: \-=7 > '> X 9 M O S Field Effect P o w e r T ra n sisto r _ 2SK824 FET iif f l 2 SK8 24 i , Nf-v/U • 4 "/1- W nmm m t : mm > h # / N ° 7 - M 0 S FET ¡tS^ifcX'T am tt ^ ^ dss = ^50 V, ID(pc)= i 12 A RDS(on)i 0 . 5 Q ton —55 ns TYP. o £ £ D ! j { W	OCR Scan	2SK824 2SK824	PDF
jb 5531 Abstract: 2SK826 Text: 5 ^ — 5 7 • 5 / — h M O S F ie ld E f f e c t P o w e r T r a n s is t o r 2SK826 N ^ ^ * ^ 7 - M O S F E T i i f f l 2SK826 i , N ^ - - v ^ ; W - ^ > ^ > X / y h ^ ' ° r7 - M 0 S T t > t & Î f c i ï * 1& < , •y f - > ? • * « , # D X C - i -y - f >	OCR Scan	2SK826Ã 221-mSJLLI 29-JtA 34-SS 354-ft 27-ffitSffi 29-ffiKS jb 5531 2SK826	PDF

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2SK82 Price and Stock

Rubycon Corporation 500USK820MEFCSN35X60

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Rubycon Corporation 420USK820MEFCSN35X45

Rubycon Corporation 420USK820MEFCSN30X55

2SK82 Datasheets (36)

2SK82 Datasheets Context Search

Untitled

Untitled

Untitled

2sk82

2SK828

2sk82

2SK822

lm575

for1a

pu45

transistor Bf 444

2SK821

for1a

FS 0245

2SK820

K825

2SK827

2SK824

2sk82

2SK829

for1a

2SK822

2SK824

jb 5531