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ADLINK Technology Inc CORE2 DUE 2.2GHZ UFCPGA-478 CPU CORE2 DUO T7500 - Bulk (Alt: CORE2 DUE 2.2GHZ UFCPGA-478)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CORE2 DUE 2.2GHZ UFCPGA-478	Bulk		13 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
ADLINK Technology Inc XEON E5-2620 2GHZ FCLGA2011 PROCESSOR, Intel Xeon E5-2620, 2.0GHz, FCLGA2011, ECC Memory - Bulk (Alt: XEON E5-2620 2GHZ FCLGA2011)
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Avnet Americas	XEON E5-2620 2GHZ FCLGA2011	Bulk		13 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
ADLINK Technology Inc CORE I3-2330E 2.2GHZ FCPGA988 CORE I3-2330E, 2.2GHZ, 3MB CACHE, - Bulk (Alt: CORE I3-2330E 2.2G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CORE I3-2330E 2.2GHZ FCPGA988	Bulk		13 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
ADLINK Technology Inc CPU i3-9100TE 2.2GHz LGA1151 CPU - Central Processing Units CPU, Core i3-9100TE, 2.20GHz, 4-Core, 6MB SmartCache, Coffee Lake, CM8068404404629 SRGR0, Step:U0, MM# 999LMZ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CPU i3-9100TE 2.2GHz LGA1151					1 $209.37 10 $200.52 100 $196.1 1000 $196.1 10000 $196.1	Get Quote
ADLINK Technology Inc CPU Core i7-4790S 3.2GHz FCLGA1150 CPU - Central Processing Units CPU, Core i7-4790S, 3.20GHz, 4-Core, 8MB SmartCache, Haswell, CM8064601561014 SR1QM, Step:C0, MM# 931984
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CPU Core i7-4790S 3.2GHz FCLGA1150					1 $479.51 10 $465.08 100 $465.08 1000 $465.08 10000 $465.08	Get Quote

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2GHZ Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
2GHz LOW NOISE AMPLIFIER WITH THE BFG410W	NXP Semiconductors	2GHz LOW NOISE AMPLIFIER WITH THE BFG410W	Original	PDF
2GHz LOW NOISE AMPLIFIER WITH THE BFG425W	NXP Semiconductors	2GHz LOW NOISE AMPLIFIER WITH THE BFG425W	Original	PDF
2GHZUDR	Philips Semiconductors	2 GHz Driver-Amplifier with the BFG425W	Original	PDF

2GHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Micrel, Inc. 3.3V/5V 3.2Gbps CML LOW-POWER LIMITING POST AMPLIFIER W/TTL LOS SY88973V SY88973V DESCRIPTION FEATURES • Multi-rate up to 3.2Gbps operation ■ Wide gain-bandwidth product • 38dB differential gain • 2GHz 3dB bandwidth ■ Low noise 50Ω CML data outputs	Original	SY88973V 800mVPP 15psPP M9999-081905	PDF
Untitled Abstract: No abstract text available Text: 2.5V, 2GHz ANY DIFF. IN-TO-LVDS Precision Edge SY89872U PROGRAMMABLE CLOCK DIVIDER/FANOUT Final BUFFER WITH INTERNAL TERMINATION FEATURES DESCRIPTION • Guaranteed AC performance over temperature and voltage: • >2GHz FMAX • < 750ps Tpd matched delay between banks	Original	SY89872U 750ps 200ps	PDF
EPA240D Abstract: No abstract text available Text: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION	Original	EPA240D 33dBm EPA240D	PDF
513 s12 datasheet Abstract: EPA060BV EPA060B Text: Excelics EPA060B/EPA060BV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN FOR EPA060B AND 11.5dB FOR EPA060BV AT 18GHz 0.4dB TYPICAL NOISE FIGURE AT 2GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE	Original	EPA060B/EPA060BV EPA060B EPA060BV 18GHz EPA060B MA162 Rn/50 513 s12 datasheet	PDF
J64-1 Abstract: UPF20120 ultrarf J296 J6-41 J641 Text: URFDB Sec 12_20120 11/3/99 11:19 AM Page 12-1 UPF20120 120W Push-Pull, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum	Original	UPF20120 30dBc J64-1 UPF20120 ultrarf J296 J6-41 J641	PDF
NN12 Abstract: P35-4230-000-200 Text: P35-4230-000-200 GaAs MMIC SPST TERMINATED SWITCH, DC - 4GHz Features • Broadband performance • Low insertion loss; 1.6dB typ at 2GHz • • Ultra low DC power consumption Fast switching speed; 3ns typical Description The P35-4230-000-200 is a high performance Gallium Arsenide single pole single throw broadband RF	Original	P35-4230-000-200 P35-4230-000-200 462/SM/01745/200 NN12	PDF
NN12 Abstract: P35-4250-0 P35-4250-3 Text: P35-4250-0 GaAs MMIC SP4T REFLECTIVE SWITCH, DC - 4GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • Small die size; 0.67 mm 0.6dB typ at 2GHz 2 Description The P35-4250-0 is a high performance Gallium Arsenide single pole four throw RF switch MMIC. It is	Original	P35-4250-0 P35-4250-0 462/SM/00027/200 NN12 P35-4250-3	PDF
GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz Abstract: NN12 P35-4215-0 P35-4215-1R P35-4215-1T Text: P35-4215-0 GaAs MMIC SPDT REFLECTIVE/NON-REFLECTIVE SWITCH, DC - 4GHz Features • • Broadband performance Low insertion loss; 0.5dB typ at 2GHz • Ultra low DC power consumption • Fast switching speed; 3ns typical • Chip form Description The P35-4215-0 is a high performance Gallium Arsenide single pole double throw broadband RF switch	Original	P35-4215-0 P35-4215-0 462/SM/00025/200 GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz NN12 P35-4215-1R P35-4215-1T	PDF
HK1005 Abstract: LQW15A NJG1119PB4 Text: NJG1119PB4 W-CDMA 用デュアル LNA GaAs MMIC •概要 NJG1119PB4 はW-CDMA 800MHz/2GHz 帯マルチバンド端末での使用を主用途とする LNA です。インバータ回路を内蔵しており、2 ビットのコントロール電圧で 800MHz 帯/2.1GHz 帯、High Gain モード/Low Gain	Original	NJG1119PB4 NJG1119PB4 800MHz/2GHz 800MHz FFP12-B4 FFP12-B4Package 2140MHz HK1005 LQW15A	PDF
HK1005 Abstract: LQW15A NJG1122PB4 h144 Text: NJG1122PB4 W-CDMA 用デュアル LNA GaAs MMIC •概要 NJG1122PB4 はW-CDMA 800MHz/2GHz 帯マルチバンド端末での使用を主用途とする LNA です。インバータ回路を内蔵しており、2 ビットのコントロール電圧で 800MHz 帯/2.1GHz 帯、High Gain モード/Low Gain	Original	NJG1122PB4 NJG1122PB4 800MHz/2GHz 800MHz FFP12-B4 FFP12-B4Package 2140MHz HK1005 LQW15A h144	PDF
20GHZ Abstract: FMA3008 MIL-HDBK-263 Text: FMA3008 FMA3008 2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER Die: 2.35mmx1.78mm Product Description Features The FMA3008 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using the	Original	FMA3008 20GHZ 35mmx1 FMA3008 23dBm -10dB FMA3008-000 FMA3008-000SQ MIL-HDBK-263	PDF
100HZ Abstract: NMA-2001 NMA-2002 NMA-2003 NMA-2004 NMA-2005 NMA-2006 NMA-2007 NMA-2008 NMA-2009 Text: NMA 2000 NOISE MODULES 100HZ TO 2GHZ DESCRIPTION NMA 2000 OUTPUT CHARACTERISTICS MODEL* FREQUENCY NOISE OUTPUT LEVEL CURRENT FLATNESS mV/ ?V/=Hz dBm/ dBm/HzENR dB mA BAND BAND Typ. Typ. NMA-2001 100Hz-100kHz NMA-2002 100Hz-300kHz ±0.5dB ±0.5dB 10 10 31.6 -27±3.0%	Original	100HZ NMA-2001 100Hz-100kHz NMA-2002 100Hz-300kHz NMA-2003 100Hz-1MHz NMA-2004 100Hz-3MHz NMA-2005 NMA-2003 NMA-2006 NMA-2007 NMA-2008 NMA-2009	PDF
P35-4250 Abstract: NN12 P35-4250-3 Text: Data sheet GaAs MMIC SP4T Reflective Switch, DC - 2GHz The P35-4250-3 is a high performance Gallium Arsenide single pole four throw broadband RF switch. It is suitable for use in broadband communications and instrumentation applications. A short circuit reflective termination is presented	Original	P35-4250-3 P35-4250-3 462/SM/00074/200 P35-4250 NN12	PDF
Untitled Abstract: No abstract text available Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : \|S2l e\|2 = 9-0dB (f=2GHz)	OCR Scan	HN3C17FU 16GHz	PDF

Untitled Abstract: No abstract text available Text: 2SC5096 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r Unit in mm V H F — UHF B A N D L O W N O ISE A M P L IF IE R A PPLICA TIO N S. • • Low Noise Figure, High Gain. N F = 1.8dB, \|S2le \|2= 7.5dB f=2GHz M A X IM U M R A T IN G S (Ta = 25°C)	OCR Scan	2SC5096 S21el2	PDF
LT 7706 Abstract: LT 7207 Text: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, \|S 2 1 e\|2= 10dB f=2GHz -H M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SC5097 -j250 LT 7706 LT 7207	PDF
marking 93A Abstract: No abstract text available Text: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type	OCR Scan	Q62702-F1144 OT-143 900MHz marking 93A	PDF
07027 Abstract: 1.0037 Text: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • ¿r = 8GHz F =1.3dB at 900MHz Package BFP193W SOT-343 RCs Q62702-F1577 1= E 2=C 3=E CÛ !l ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	900MHz BFP193W Q62702-F1577 OT-343 BFP193W 07027 1.0037	PDF
Untitled Abstract: No abstract text available Text: CHS5039 ADVAN CED INFORMATION DC • 2GHz NON-REFLECTIVE SPDT SWITCH WITH DRIVER G a A s M O N O L I T H I C M I C R O W A V E 1C FEATURES • • • • • Low switching time • Integrated CMOS/TTL compatible driver • A v a ila b le in S O -8 su rfa ce m ount p la s tic	OCR Scan	CHS5039 CHS5039-BBB/00 CHS5039 Ctl/90% Ctl/10%	PDF
IC 4017 B Abstract: TELEDYNE PHILBRICK V to F TELEDYNE PHILBRICK OP AMP Text: TELEDYNE COMPONENTS EÖE D m fiTlTbüS QQÜbBQH H m 1443 Fast Settling Fully Differential FET Input Op Amp The combination of high speed, wide bandwidth, excellent D C characteristics, and low-gain stability place the 1443 at the forefront of high performance operational amplifiers. Its 2GHz	OCR Scan	130nsec 120MHz, GQQb204 IC 4017 B TELEDYNE PHILBRICK V to F TELEDYNE PHILBRICK OP AMP	PDF
NJ 25 50 N Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR T Y P E 2SC4322 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm +0.5 2.5-0.3 . Low Noise Figure, High Gain. . NF=1.8dB, I S21e \|2=7.5dB f=2GHz M A X I M U M RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage	OCR Scan	2SC4322 UHJ1U1O\00? 2SC4315 NJ 25 50 N	PDF
Q62702-F938 Abstract: IS21E K2112 Text: SIEMENS BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA Q62702-F938 1=B O GEs LU II CM BFR 35AP CO II ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	Q62702-F938 OT-23 IS21e K2112	PDF
Untitled Abstract: No abstract text available Text: CHS5037 ADVANCED INFORMATION DC • 2GHz REFLECTIVE SPDT SWITCH WITH DRIVER G a A s M O N O L I T H I C M I C R O W A V E 1C FEATURES • • • • • Low switching time • Integrated CMOS/TTL compatible driver • Available in SO-8 surface mount plastic pac	OCR Scan	CHS5037 CHS5037-BBB/00 CHS5037 BBB/00	PDF
Untitled Abstract: No abstract text available Text: R E V I SIONS 716-24 NOTES: I . M A T E R I A L S OF CONS TR UCT I ON BODY • 8 R AS S . WHITE BRONZE P L A T I N G CONTACT ONE P I E C E - B t C u , S I L V E R PLATEO I NSULATOR - PTFE 2 ELECTRICAL A. VSWR ( RETURN L O S S ) , M I N I M UM OC - 2GHz : 1. 05 ( 32 dB>	OCR Scan		PDF

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2GHZ Search Results

2GHZ Price and Stock

ADLINK Technology Inc CORE2 DUE 2.2GHZ UFCPGA-478

ADLINK Technology Inc XEON E5-2620 2GHZ FCLGA2011

ADLINK Technology Inc CORE I3-2330E 2.2GHZ FCPGA988

ADLINK Technology Inc CPU i3-9100TE 2.2GHz LGA1151

ADLINK Technology Inc CPU Core i7-4790S 3.2GHz FCLGA1150

2GHZ Datasheets (3)

2GHZ Datasheets Context Search

Untitled

Untitled

EPA240D

513 s12 datasheet

J64-1

NN12

NN12

GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz

HK1005

HK1005

20GHZ

100HZ

P35-4250

Untitled

Untitled

LT 7706

marking 93A

07027

Untitled

IC 4017 B

NJ 25 50 N

Q62702-F938

Untitled

Untitled