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    2MBI150U2A Price and Stock

    Fuji Electric Co Ltd 2MBI150U2A-060-50

    Igbt, Module, Dual N Channel, 600V, 150A; Continuous Collector Current:150A; Collector Emitter Saturation Voltage:2.35V; Power Dissipation:500W; Operating Temperature Max:150°C; Igbt Termination:Stud; Transistor Mounting:Panel Rohs Compliant: Yes |Fuji Electric 2MBI150U2A-060-50
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 2MBI150U2A-060-50 Bulk 1
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    Fuji Electric Semiconductors 2MBI150U2A-060-50

    IGBT MOD.DIODE DUAL 150A 600V U SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik 2MBI150U2A-060-50
    • 1 $77.30472
    • 10 $77.30472
    • 100 $72.2474
    • 1000 $72.2474
    • 10000 $72.2474
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    2MBI150U2A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2MBI150U2A-060 Fuji Electric IGBT Module U-Series 600V / 150A 2 in one-package Original PDF

    2MBI150U2A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2MBI150U2A-060

    Abstract: M232 DSA0029321
    Text: 2MBI150U2A-060 IGBT Module U-Series 600V / 150A 2 in one-package 2. Equivalent circuit Equivalent Circuit Schematic Features Applications • High speed switching · Voltage drive · Low inductance module structure · Inverter for Motor drive · AC and DC Servo drive amplifier


    Original     		2MBI150U2A-060 2MBI150U2A-060 M232 DSA0029321 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION Device Name : IGBT module Type Name : 2MBI150U2A-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5615 MS5F 5615 1 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Ind. Content R e c o r d s


    Original     		2MBI150U2A-060 MS5F5615 H04-004-07b H04-004-06b H04-004-03a PDF

    2MBI150U2A-060

    Abstract: ED-4701 M232 MT5F12959 2mbi150u2a
    Text: SPECIFICATION Device Name : IGBT module Type Name : 2MBI150U2A-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5615 MS5F 5615 1 a 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Jan.-16 -’04 Revision


    Original     		2MBI150U2A-060 MS5F5615 H04-004-07b P4/13) P12/13, H04-004-06b H04-004-03a 2MBI150U2A-060 ED-4701 M232 MT5F12959 2mbi150u2a PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    inverter welder schematic diagram

    Abstract: igbt inverter welder schematic IGBT welder schematic 6MBI20UE-060 inverter welder schematic ,inverter welder schematic IGBT driver EXB841 welder FERRITE TRANSFORMER design igbt inverter welder service manual ,welder FERRITE TRANSFORMER
    Text: Quality is our message FUJI IGBT MODULES APPLICATION MANUAL February 2004 REH984 CONTENTS Chapter 1 Structure and Features 1. Structure and features . 1-3 2. FUJI's IGBTs. 1-4


    Original     		REH984 inverter welder schematic diagram igbt inverter welder schematic IGBT welder schematic 6MBI20UE-060 inverter welder schematic ,inverter welder schematic IGBT driver EXB841 welder FERRITE TRANSFORMER design igbt inverter welder service manual ,welder FERRITE TRANSFORMER PDF

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 PDF

    2MBI450U4E-120

    Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
    Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！


    Original     		max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120 PDF